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公开(公告)号：US09646903B2
公开(公告)日：2017-05-09
申请号：US14171707
申请日：2014-02-03
CPC分类号： H01L23/24 , C08G73/10 , C08L79/08 , C08L2203/20 , C08L2205/02 , H01L21/563 , H01L21/566 , H01L24/29 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2924/01029 , H01L2924/01078 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/00012 , H01L2924/3512 , H01L2924/00
摘要： Dendrimer/hyperbranched materials are combined with polyimide to form a low CTE material for use as a dielectric substrate layer or an underfill. In the alternative, ruthenium carbene complexes are used to catalyze ROMP cross-linking reactions in polyimides to produce a class of cross-linkable, thermal and mechanical stable material for use as a dielectric substrate or underfill. In another alternative, dendrimers/hyperbranched materials are synthesized by different methods to produce low viscosity, high Tg, fast curing, mechanically and chemically stable materials for imprinting applications.
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公开(公告)号：US07534649B2
公开(公告)日：2009-05-19
申请号：US11432986
申请日：2006-05-12
IPC分类号： H01L21/00
CPC分类号： H01L23/24 , C08G73/10 , C08L79/08 , C08L2203/20 , C08L2205/02 , H01L21/563 , H01L21/566 , H01L24/29 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2924/01029 , H01L2924/01078 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/00012 , H01L2924/3512 , H01L2924/00
摘要： Dendrimer/hyperbranched materials are combined with polyimide to form a low CTE material for use as a dielectric substrate layer or an underfill. In the alternative, ruthenium carbene complexes are used to catalyze ROMP cross-linking reactions in polyimides to produce a class of cross-linkable, thermal and mechanical stable material for use as a dielectric substrate or underfill. In another alternative, dendrimers/hyperbranched materials are synthesized by different methods to produce low viscosity, high Tg, fast curing, mechanically and chemically stable materials for imprinting applications.
摘要翻译： 树枝状聚合物/超支化材料与聚酰亚胺组合以形成用作电介质基底层或底部填充剂的低CTE材料。 另一方面，钌卡宾络合物用于催化聚酰亚胺中的ROMP交联反应，以产生用作电介质基底或底部填充剂的一类可交联，热和机械稳定的材料。 在另一种替代方案中，树枝状大分子/超支化材料通过不同的方法合成，以产生用于印记应用的低粘度，高Tg，快速固化，机械和化学稳定的材料。
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公开(公告)号：US20140148557A1
公开(公告)日：2014-05-29
申请号：US14171707
申请日：2014-02-03
IPC分类号： H01L23/24
CPC分类号： H01L23/24 , C08G73/10 , C08L79/08 , C08L2203/20 , C08L2205/02 , H01L21/563 , H01L21/566 , H01L24/29 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2924/01029 , H01L2924/01078 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/00012 , H01L2924/3512 , H01L2924/00
摘要： Dendrimer/hyperbranched materials are combined with polyimide to form a low CTE material for use as a dielectric substrate layer or an underfill. In the alternative, ruthenium carbene complexes are used to catalyze ROMP cross-linking reactions in polyimides to produce a class of cross-linkable, thermal and mechanical stable material for use as a dielectric substrate or underfill. In another alternative, dendrimers/hyperbranched materials are synthesized by different methods to produce low viscosity, high Tg, fast curing, mechanically and chemically stable materials for imprinting applications.
摘要翻译： 树枝状聚合物/超支化材料与聚酰亚胺组合以形成用作电介质基底层或底部填充剂的低CTE材料。 另一方面，钌卡宾络合物用于催化聚酰亚胺中的ROMP交联反应，以产生用作电介质基底或底部填充剂的一类可交联，热和机械稳定的材料。 在另一种替代方案中，树枝状大分子/超支化材料通过不同的方法合成，以产生用于印记应用的低粘度，高Tg，快速固化，机械和化学稳定的材料。
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公开(公告)号：US08643199B2
公开(公告)日：2014-02-04
申请号：US12361485
申请日：2009-01-28
IPC分类号： H01L23/29
CPC分类号： H01L23/24 , C08G73/10 , C08L79/08 , C08L2203/20 , C08L2205/02 , H01L21/563 , H01L21/566 , H01L24/29 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2924/01029 , H01L2924/01078 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/00012 , H01L2924/3512 , H01L2924/00
摘要： Dendrimer/hyperbranched materials are combined with polyimide to form a low CTE material for use as a dielectric substrate layer or an underfill. In the alternative, ruthenium carbene complexes are used to catalyze ROMP cross-linking reactions in polyimides to produce a class of cross-linkable, thermal and mechanical stable material for use as a dielectric substrate or underfill. In another alternative, dendrimers/hyperbranched materials are synthesized by different methods to produce low viscosity, high Tg, fast curing, mechanically and chemically stable materials for imprinting applications.
摘要翻译： 树枝状聚合物/超支化材料与聚酰亚胺组合以形成用作电介质基底层或底部填充剂的低CTE材料。 另一方面，钌卡宾络合物用于催化聚酰亚胺中的ROMP交联反应，以产生用作电介质基底或底部填充剂的一类可交联，热和机械稳定的材料。 在另一种替代方案中，树枝状大分子/超支化材料通过不同的方法合成，以产生用于印记应用的低粘度，高Tg，快速固化，机械和化学稳定的材料。
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公开(公告)号：US20090146289A1
公开(公告)日：2009-06-11
申请号：US12361485
申请日：2009-01-28
CPC分类号： H01L23/24 , C08G73/10 , C08L79/08 , C08L2203/20 , C08L2205/02 , H01L21/563 , H01L21/566 , H01L24/29 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2924/01029 , H01L2924/01078 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/00012 , H01L2924/3512 , H01L2924/00
摘要： Dendrimer/hyperbranched materials are combined with polyimide to form a low CTE material for use as a dielectric substrate layer or an underfill. In the alternative, ruthenium carbene complexes are used to catalyze ROMP cross-linking reactions in polyimides to produce a class of cross-linkable, thermal and mechanical stable material for use as a dielectric substrate or underfill. In another alternative, dendrimers/hyperbranched materials are synthesized by different methods to produce low viscosity, high Tg, fast curing, mechanically and chemically stable materials for imprinting applications.
摘要翻译： 树枝状聚合物/超支化材料与聚酰亚胺组合以形成用作电介质基底层或底部填充剂的低CTE材料。 另一方面，钌卡宾络合物用于催化聚酰亚胺中的ROMP交联反应，以产生用作电介质基底或底部填充剂的一类可交联，热和机械稳定的材料。 在另一种替代方案中，树枝状大分子/超支化材料通过不同的方法合成，以产生用于印记应用的低粘度，高Tg，快速固化，机械和化学稳定的材料。
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公开(公告)号：US09349698B2
公开(公告)日：2016-05-24
申请号：US13534565
申请日：2012-06-27
CPC分类号： H01L24/05 , H01L23/3157 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/14 , H01L2224/02126 , H01L2224/0384 , H01L2224/03845 , H01L2224/0391 , H01L2224/0401 , H01L2224/05025 , H01L2224/05147 , H01L2224/05567 , H01L2224/05571 , H01L2224/05647 , H01L2224/1132 , H01L2224/1147 , H01L2224/11474 , H01L2224/1148 , H01L2224/11849 , H01L2224/13007 , H01L2224/13026 , H01L2924/00014 , H01L2924/351 , H01L2924/00012 , H01L2224/05552
摘要： This disclosure relates generally to a wafer having a plurality of semiconductor chips having a major surface, a metal contact positioned on one of the plurality of semiconductor chips and having a side surface and contact surface, the contact surface substantially parallel to the major surface, wherein the contact surface defines a thickness of the metal contact relative to the major surface, an underfill layer abutting the one of the plurality of semiconductor chips and the side surface of the metal contact, the underfill layer having a top surface substantially parallel to the major surface, wherein the top surface of the underfill layer defines a thickness of the underfill layer relative to the major surface, the thickness of the underfill layer being not greater than the thickness of the metal contact, and a solder bump formed in electrical contact with the contact surface of the metal contact.
摘要翻译： 本公开总体上涉及具有多个具有主表面的半导体芯片的晶片，位于多个半导体芯片之一上的金属触点，并且具有侧表面和接触表面，该接触表面基本上平行于主表面，其中 所述接触表面限定所述金属接触件相对于所述主表面的厚度，底部填充层邻接所述多个半导体芯片中的一个和所述金属接触件的侧表面，所述底部填充层具有基本上平行于所述主表面的顶表面 其中所述底部填充层的顶表面相对于所述主表面限定所述底部填充层的厚度，所述底部填充层的厚度不大于所述金属接触件的厚度，以及形成为与所述触点电接触的焊料凸块 表面的金属接触。
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7.发明授权Polymerized cycloolefins using transition metal catalyst and end products thereof 有权使用过渡金属催化剂及其最终产物的聚合环烯烃公开(公告)号：US07910674B2
公开(公告)日：2011-03-22
申请号：US10464978
申请日：2003-06-18
申请人： Larry Funderburk Rhodes , Andrew Bell , Ramakrishna Ravikiran , John C. Fondran , Saikumar Jayaraman , Brian Leslie Goodall , Richard A. Mimna , John-Henry Lipian
发明人： Larry Funderburk Rhodes , Andrew Bell , Ramakrishna Ravikiran , John C. Fondran , Saikumar Jayaraman , Brian Leslie Goodall , Richard A. Mimna , John-Henry Lipian
IPC分类号： C08F32/00 , G01R31/26 , H01L21/00 , H01L21/82 , H01L23/58 , H01L23/02 , H01L23/14 , H01L23/29
摘要： Methods for the addition polymerization of cycloolefins using a cationic Group 10 metal complex and a weakly coordinating anion of the formula: [(R′)zM(L′)x(L″)y]b[WCA]d wherein [(R′)zM(L′)x(L″)y] is a cation complex where M represents a Group 10 transition metal; R′ represents an anionic hydrocarbyl containing ligand; L′ represents a Group 15 neutral electron donor ligand; L″ represents a labile neutral electron donor ligand; x is 1 or 2; and y is 0, 1, 2, or 3; and z is 0 or 1, wherein the sum of x, y, and z is 4; and [WCA] represents a weakly coordinating counteranion complex; and b and d are numbers representing the number of times the cation complex and weakly coordinating counteranion complex are taken to balance the electronic charge on the overall catalyst complex.
摘要翻译： 使用阳离子第10族金属络合物和式（[（R'）z M（L'）x（L“）y] b [WCA] d的弱配位阴离子进行环烯加成聚合的方法，其中[（R' ）zM（L'）x（L“）y]是阳离子络合物，其中M表示第10族过渡金属; R'表示含阴离子烃基的配体; L'表示15族中性电子给体配体; L“表示不稳定的中性电子给体配体; x为1或2; y为0,1,2或3; 且z为0或1，其中x，y和z之和为4; 和[WCA]代表弱协调的对抗综合体; b和d是表示阳离子络合物和弱配位抗衡阴离子络合物在总体催化剂络合物上平衡电荷的次数的数字。
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公开(公告)号：US07521115B2
公开(公告)日：2009-04-21
申请号：US10321060
申请日：2002-12-17
IPC分类号： B32B9/00
CPC分类号： C08L101/12 , B29C39/026 , B29C70/58 , B29C70/882 , B29L2031/3406 , C08J5/10 , H01L24/10 , H01L24/13 , H01L2224/13 , H01L2224/13099 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01082 , H01L2924/14 , H01L2924/30107 , H05K3/321 , H05K2201/0367 , H05K2201/10674 , H05K2201/10719 , Y10T428/24917 , Y10T428/25 , Y10T428/31681 , H01L2924/00 , H01L2224/0401
摘要： A method for low temperature bumping is disclosed. A resin capable of being cross-linked by free-radical or cationic polymerization at low temperature is provided. Electrically conductive particles are then added to the resin to form a mixture. The mixture is then activated by heat or exposure to light to polymerize the mixture. In an alternative embodiment, a vinyl ether resin is used, to which electrically conductive particles are added. The mixture is polymerized by exposure to light.
摘要翻译： 公开了一种低温碰撞的方法。 提供能够在低温下通过自由基或阳离子聚合交联的树脂。 然后将导电颗粒加入到树脂中以形成混合物。 然后通过加热或暴露于光使混合物活化，以使混合物聚合。 在替代实施方案中，使用乙烯基醚树脂，其中加入导电颗粒。 混合物通过曝光聚合。
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公开(公告)号：US07387841B2
公开(公告)日：2008-06-17
申请号：US11013626
申请日：2004-12-15
申请人： Saikumar Jayaraman
发明人： Saikumar Jayaraman
IPC分类号： B32B9/04
CPC分类号： C09D183/04 , C08K3/32 , C08K5/5419 , Y10T428/31663
摘要： The present invention describes a method including: providing a material A, the material A including a siloxane backbone with a hydride functional group; reacting the material A with a material B in the presence of a catalyst to form a material C, the material B including an alkenyl functional group and an aromatic carbonate functional group; heating the material C to form a material D, the material D including a phenol functional group; and reacting the material D with a material E and a material F to form a material G, the material E including a cyanogen halide, the material F including an acid acceptor, the material G including an aromatic cyanate ester functional group. The present invention further describes a die attach adhesive including a three-dimensional network of substituted triazine rings.
摘要翻译： 本发明描述了一种方法，包括：提供材料A，包含具有氢化物官能团的硅氧烷主链的材料A; 在催化剂存在下使材料A与材料B反应形成材料C，材料B包括链烯基官能团和芳族碳酸酯官能团; 加热材料C以形成材料D，材料D包括酚官能团; 并使材料D与材料E和材料F反应以形成材料G，所述材料E包括卤化氰，包括酸受体的材料F，所述材料G包括芳族氰酸酯官能团。 本发明进一步描述了包含取代的三嗪环的三维网络的管芯附着粘合剂。
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10.发明授权Chip package thermal interface materials with dielectric obstructions for body-biasing, methods of using same, and systems containing same 有权具有用于体偏置的电介质障碍物的芯片封装热界面材料，其使用方法以及含有它们的体系公开(公告)号：US07332807B2
公开(公告)日：2008-02-19
申请号：US11323512
申请日：2005-12-30
CPC分类号： H01L23/3737 , H01L2224/05571 , H01L2224/05573 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/2929 , H01L2224/293 , H01L2224/29486 , H01L2224/2949 , H01L2224/29499 , H01L2224/32245 , H01L2224/73253 , H01L2924/00014 , H01L2924/01079 , H01L2924/01327 , H01L2924/15311 , H01L2924/16152 , H01L2924/00 , H01L2224/05599
摘要： A chip package includes a thermal interface material disposed between a die backside and a heat sink. The thermal interface material includes a first metal particle that is covered by a dielectric film. The dielectric film is selected from an inorganic compound of the first metal or an inorganic compound coating of a second metal. The dielectric film diminishes overall heat transfer from the first metal particle in the thermal interface material by a small fraction of total possible heat transfer without the dielectric film. A method of operating the chip includes biasing the chip with the dielectric film in place.
摘要翻译： 芯片封装包括设置在模具背面和散热器之间的热界面材料。 热界面材料包括由电介质膜覆盖的第一金属颗粒。 电介质膜选自第一金属的无机化合物或第二金属的无机化合物涂层。 电介质膜减少热界面材料中的第一金属颗粒的总传热量，而不需要电介质膜的总可能传热的一小部分。 一种操作该芯片的方法包括：将该电介质膜的芯片偏压就位。
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