公开(公告)号：US20060189019A1

公开(公告)日：2006-08-24

申请号：US11063479

申请日：2005-02-23

Applicant: Chia-Ming Lee ,  Tsung Chen ,  I-Ling Chen ,  Yu-Chuan Liu ,  Jen-Inn Chyi

Inventor： Chia-Ming Lee ,  Tsung Chen ,  I-Ling Chen ,  Yu-Chuan Liu ,  Jen-Inn Chyi

IPC: H01L21/00

CPC classification number: C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661

Abstract: In a method of forming a crystalline GaN-based material, a first nucleation layer is formed on a substrate at a first temperature, followed with forming a second nucleation layer at a second temperature different from the first temperature. The first and second nucleation layers are composed of AlxInyGa(1-x-y)N. Subsequently, a layer of a crystalline GaN-based compound is epitaxy grown on the second nucleation layer.

Abstract translation: 在形成结晶GaN基材料的方法中，在第一温度下在基板上形成第一成核层，随后在与第一温度不同的第二温度下形成第二成核层。 第一和第二成核层由Al x Ga y（1-x-y）N组成。 随后，在第二成核层上生长一层结晶的GaN基化合物外延生长。

公开(公告)号：US20060119668A1

公开(公告)日：2006-06-08

申请号：US11339251

申请日：2006-01-25

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: B41J2/12

CPC classification number: H01L33/507 ,  H01L25/0756 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device comprising a light-emitting unit including a plurality of first connecting pads, a base substrate including a plurality of second connecting pads, and a plurality of conductive bumps that connect the first connecting pads of the light-emitting unit to the second connecting pads of the base substrate. In the manufacturing process, a reflow process is performed to bond the conductive bumps to the first and second connecting pads. The light-emitting unit is configured to emit a first light radiation upon the application of an electric current flow, and the base substrate is configured to emit a second light radiation when stimulated by the first light radiation.

Abstract translation: 一种发光装置，包括包括多个第一连接焊盘的发光单元，包括多个第二连接焊盘的基板，以及将所述发光单元的第一连接焊盘连接到所述发光单元的多个导电凸块 基底基板的第二连接焊盘。 在制造过程中，执行回流处理以将导电凸块接合到第一和第二连接焊盘。 发光单元被配置为在施加电流时发射第一光辐射，并且基底基板被配置为当被第一光辐射刺激时发射第二光辐射。

公开(公告)号：US20050226297A1

公开(公告)日：2005-10-13

申请号：US10710843

申请日：2004-08-06

Applicant: Hung-Cheng Lin ,  Jen-Inn Chyi ,  Guan-Ting Chen

Inventor： Hung-Cheng Lin ,  Jen-Inn Chyi ,  Guan-Ting Chen

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22

CPC classification number: H01S5/22 ,  H01S5/0425 ,  H01S5/2214

Abstract: A method of manufacturing a semiconductor laser device is provided. First, a first mask layer is formed on an epitaxial structure to define a protrudent area in a ridge structure. Thereafter, a conformal second mask layer is formed over the epitaxial structure to cover the first mask layer. A third mask layer is formed over the second mask layer. The exposed second mask layer is removed. Using the first and the third mask layers as etching masks, a portion of the epitaxial structure is removed. The third mask layer and the remaining second mask layer are removed to form the ridge structure. An insulation layer is formed on the epitaxial structure and then the first mask layer is removed to expose the top surface of the protrudent area. A conductive layer is formed on the epitaxial structure such that it contacts with the top surface of the protrudent area.

Abstract translation: 提供一种制造半导体激光器件的方法。 首先，在外延结构上形成第一掩模层以限定脊结构中的突出区域。 此后，在外延结构上形成保形第二掩模层以覆盖第一掩模层。 在第二掩模层上形成第三掩模层。 暴露的第二掩模层被去除。 使用第一和第三掩模层作为蚀刻掩模，去除外延结构的一部分。 去除第三掩模层和剩余的第二掩模层以形成脊结构。 在外延结构上形成绝缘层，然后去除第一掩模层以暴露突出区域的顶表面。 导电层形成在外延结构上，使得其与突出区域的顶表面接触。

公开(公告)号：US5637146A

公开(公告)日：1997-06-10

申请号：US413364

申请日：1995-03-30

Applicant: Jen-Inn Chyi

Inventor： Jen-Inn Chyi

IPC: C30B25/10 ,  C30B35/00

CPC classification number: C30B29/403 ,  C30B25/105 ,  C30B29/406 ,  Y10T117/10 ,  Y10T117/1008

Abstract: A method for the growth of semiconducting nitrides, such as GaN, InN, AlN, and their alloys, in an ultra-high vacuum chamber, wherein low energy atomic nitrogen is generated by a plasma-excited radical atom source, the atom beam is introduced to the heated substrate within a short distance, other gaseous reactants and dopants, such as TMGa, TMIn, TMAj, DEZn, CP.sub.2 Mg, SiH.sub.4, and similar organmetallic and hydride sources, are injected from a circular injector located between the substrate and the atom source, and therefore large area epitaxy with high growth rate is obtained.

Abstract translation: 在超高真空室中生长半导体氮化物如GaN，InN，AlN及其合金的方法，其中低能原子氮由等离子体激发的自由基原子源产生，引入原子束 在较短距离内的加热衬底上，其它气态反应物和掺杂剂如TMGa，TMIn，TMAj，DEZn，CP2Mg，SiH4和类似的有机金属和氢化物源从位于衬底和原子源之间的圆形注射器注入 ，因此获得了具有高生长速率的大面积外延。

公开(公告)号：US08253167B2

公开(公告)日：2012-08-28

申请号：US12694002

申请日：2010-01-26

Applicant: Heng-Kuang Lin ,  Pei-Chin Chiu ,  Jen-Inn Chyi ,  Han-Chieh Ho ,  Clement Hsingjen Wann ,  Chih-Hsin Ko ,  Cheng-Hsien Wu

Inventor： Heng-Kuang Lin ,  Pei-Chin Chiu ,  Jen-Inn Chyi ,  Han-Chieh Ho ,  Clement Hsingjen Wann ,  Chih-Hsin Ko ,  Cheng-Hsien Wu

IPC: H01L27/092

CPC classification number: H01L29/205 ,  B82Y10/00 ,  H01L21/8252 ,  H01L27/085 ,  H01L27/0883 ,  H01L27/092 ,  H01L29/122 ,  H01L29/42316 ,  H01L29/42356 ,  H01L29/66462 ,  H01L29/7783

Abstract: An integrated circuit structure includes a substrate and a first and a second plurality of III-V semiconductor layers. The first plurality of III-V semiconductor layers includes a first bottom barrier over the substrate; a first channel layer over the first bottom barrier; and a first top barrier over the first channel layer. A first field-effect transistor (FET) includes a first channel region, which includes a portion of the first channel layer. The second plurality of III-V semiconductor layers is over the first plurality of III-V semiconductor layers and includes a second bottom barrier; a second channel layer over the second bottom barrier; and a second top barrier over the second channel layer. A second FET includes a second channel region, which includes a portion of the second channel layer.

Abstract translation: 集成电路结构包括基板和第一和第二多个III-V半导体层。 所述第一多个III-V半导体层包括在所述衬底上的第一底部阻挡层; 在第一底部屏障上的第一通道层; 以及第一通道层上的第一顶部势垒。 第一场效应晶体管（FET）包括第一沟道区，其包括第一沟道层的一部分。 第二多个III-V半导体层在第一多个III-V半导体层之上，并且包括第二底部屏障; 在第二底部屏障上的第二通道层; 以及在第二通道层上的第二顶部阻挡层。 第二FET包括第二沟道区，其包括第二沟道层的一部分。

公开(公告)号：US08237174B2

公开(公告)日：2012-08-07

申请号：US12776834

申请日：2010-05-10

Applicant: Peng-Ren Chen ,  Hsueh-Hsing Liu ,  Jen-Inn Chyi

Inventor： Peng-Ren Chen ,  Hsueh-Hsing Liu ,  Jen-Inn Chyi

IPC: H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC classification number: H01L33/14 ,  H01L33/04

Abstract: The present invention discloses an LED structure, wherein an N-type current spreading layer is interposed between N-type semiconductor layers to uniformly distribute current flowing through the N-type semiconductor layer. The N-type current spreading layer includes at least three sub-layers stacked in a sequence of from a lower band gap to a higher band gap, wherein the sub-layer having the lower band gap is near the substrate, and the sub-layer having the higher band gap is near the light emitting layer. Each sub-layer of the N-type current spreading layer is expressed by a general formula InxAlyGa(1-x-y)N, wherein 0≦x≦1, 0≦y≦1, and 0≦x+y≦1.

Abstract translation: 本发明公开了一种LED结构，其中N型电流扩展层插入在N型半导体层之间以均匀地分布流过N型半导体层的电流。 N型电流扩展层包括从低带隙到较高带隙的顺序堆叠的至少三个子层，其中具有较低带隙的子层在衬底附近，并且子层 具有较高带隙的发光层靠近发光层。 N型电流扩展层的每个子层由通式In x Al y Ga（1-x-y）N表示，其中0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1和0＆nlE; x + y＆nlE;

公开(公告)号：US20120189240A1

公开(公告)日：2012-07-26

申请号：US13038553

申请日：2011-03-02

Applicant: Hung-Chih Lu ,  Jen-Inn Chyi

Inventor： Hung-Chih Lu ,  Jen-Inn Chyi

IPC: G02F1/295

CPC classification number: G02F1/3133 ,  G02F2001/311 ,  G02F2203/585

Abstract: A wavelength division multiplexing and optical modulation apparatus includes at least two modulation region-added grating-assisted cross-state directional coupler units and a modulation region-added cross-state directional coupler. The modulation region-added grating-assisted cross-state directional coupler units and the modulation region-added cross-state directional coupler unit are connected to one another in serial. Each of the modulation region-added grating-assisted cross-state directional coupler units each includes a modulation region-added cross-state directional coupler, a grating and a modulation region. The modulation region-added cross-state directional coupler unit includes an output waveguide, an input waveguide and a modulation region.

Abstract translation: 波分复用和光调制装置包括至少两个调制区域附加的光栅辅助交叉定向耦合器单元和调制区域增加的交叉定向耦合器。 调制区域附加的光栅辅助交叉定向耦合器单元和调制区域增加的交叉定向耦合器单元彼此串联连接。 调制区域附加光栅辅助交叉定向耦合器单元中的每一个均包括调制区域增加的交叉状态定向耦合器，光栅和调制区域。 调制区域增加的交叉定向耦合器单元包括输出波导，输入波导和调制区域。

公开(公告)号：US20110045658A1

公开(公告)日：2011-02-24

申请号：US12641030

申请日：2009-12-17

Applicant: Hsueh-hsing LIU ,  Jen-inn Chyi ,  Chin-chi Wu

Inventor： Hsueh-hsing LIU ,  Jen-inn Chyi ,  Chin-chi Wu

IPC: H01L21/20

CPC classification number: H01L21/0254 ,  C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02639

Abstract: A method for fabricating a semi-polar nitride semiconductor is disclosed, comprising following steps: firstly, a (001) substrate tilted at 7 degrees and having a plurality of V-like grooves is provided, and tilted surfaces of the V-like groove are a (111) surface at 61.7 degrees and a ( 1 11) surface at 47.7 degrees; next, a surface of said substrate is cleaned by using a deoxidized solution, and then a buffer layer is formed on said substrate to cover said V-like grooves; then, said buffer layer is covered with an oxide layer except for said buffer layer formed on said (111) surface at 61.7 degrees; and finally, said semi-polar nitride semiconductor is formed on said buffer layer having (111) surface at 61.7 degrees to enhance the quality of said semi-polar nitride semiconductor.

Abstract translation: 公开了一种制造半极性氮化物半导体的方法，包括以下步骤：首先，提供倾斜7度并具有多个V形槽的（001）基板，并且V型槽的倾斜表面 在61.7度的（111）表面和47.7度的（11）表面; 接下来，通过使用脱氧溶液清洗所述基板的表面，然后在所述基板上形成缓冲层以覆盖所述V形槽; 然后，除了形成在所述（111）表面上的所述缓冲层61.7度之外，所述缓冲层被氧化层覆盖; 最后，在具有（111）表面的所述缓冲层上以61.7度形成所述半极性氮化物半导体，以提高所述半极性氮化物半导体的质量。

公开(公告)号：US07608532B2

公开(公告)日：2009-10-27

申请号：US12014200

申请日：2008-01-15

Applicant: Hung-Cheng Lin ,  Jen-Inn Chyi

Inventor： Hung-Cheng Lin ,  Jen-Inn Chyi

IPC: H01L21/28 ,  H01L21/3205

CPC classification number: H01L21/0262 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/0062 ,  H01L33/06

Abstract: A method of growing nitride semiconductor material and particularly a method of growing Indium nitride is disclosed can increase surface flatness of a nitride semiconductor material and decrease density of V-defects therein. Further, the method can increase light emission efficiency of a quantum well or quantum dots of the produced LED as well as greatly increase yield. The method is also applicable to the fabrications of electronic devices made of nitride semiconductor material and diodes of high breakdown voltage for rectification. The method can greatly increase surface flatness of semiconductor material for HBT, thereby increasing quality of the produced semiconductor devices.

Abstract translation: 公开了一种生长氮化物半导体材料的方法，特别是生长氮化铟的方法可以增加氮化物半导体材料的表面平坦度并降低其中的V型缺陷的密度。 此外，该方法可以提高所产生的LED的量子阱或量子点的发光效率，并且大大提高产量。 该方法还适用于由氮化物半导体材料制成的电子器件和用于整流的高击穿电压的二极管的制造。 该方法可以大大增加用于HBT的半导体材料的表面平坦度，从而提高所制造的半导体器件的质量。

公开(公告)号：US20080258132A1

公开(公告)日：2008-10-23

申请号：US11500935

申请日：2006-08-09

Applicant: Wei-Sheng Liu ,  Jen-Inn Chyi

Inventor： Wei-Sheng Liu ,  Jen-Inn Chyi

IPC: H01L29/06

CPC classification number: H01L29/127 ,  B82Y10/00 ,  H01L29/20 ,  H01L33/06 ,  H01L33/32

Abstract: A quantum dot optoelectronic device has an overgrown layer containing antimony (Sb). The optical characteristics and thermal stability of the optoelectronic device are thus greatly enhanced due to the improved crystal quality and carrier confinement of the quantum dot structure.

Abstract translation: 量子点光电子器件具有含有锑（Sb）的杂交层。 由于量子点结构的晶体质量和载流子限制，光电子器件的光学特性和热稳定性因此大大提高。