FOLDING TYPE PACKAGE
    21.
    发明申请
    FOLDING TYPE PACKAGE 审中-公开
    折叠式包装

    公开(公告)号:US20130200092A1

    公开(公告)日:2013-08-08

    申请号:US13570564

    申请日:2012-08-09

    CPC classification number: B65D75/24 B65D81/025

    Abstract: A folding type package includes a body including first and second parts to face each other when the body is folded to enclose a product, at least one product housing part formed at the body, and a buffer part extending from the product housing part to secure a buffer space to buffer a shock applied to the product.

    Abstract translation: 折叠式包装包括主体,其包括当主体被折叠以包围产品时的彼此面对的第一部分和第二部分,形成在主体上的至少一个产品收纳部分和从产品外壳部分延伸的缓冲部分 缓冲空间来缓冲产品的冲击。

    Fin-type heat sink for electronic component
    22.
    发明授权
    Fin-type heat sink for electronic component 有权
    电子元件散热片

    公开(公告)号:US08240360B2

    公开(公告)日:2012-08-14

    申请号:US12205773

    申请日:2008-09-05

    Abstract: One embodiment exemplarily described herein can be generally characterized as a heat sink for an electronic component. The heat sink may include a main body thermally contactable to an electronic component; at least one fin thermally contacted with the main body; and a confining member. The at least one fin and the confining member may be cooperatively engaged such that the at least one fin is moveable between a first position relative to a longitudinal axis of the main body and a second position relative to the longitudinal axis of the relative to the main body.

    Abstract translation: 本文示例性描述的一个实施例通常可以表征为电子部件的散热器。 散热器可以包括可与电子部件热接触的主体; 至少一个翅片与主体热接触; 和一个限制成员。 所述至少一个翅片和所述限制构件可以协作地接合,使得所述至少一个翅片可在相对于所述主体的纵向轴线的第一位置和相对于所述主体的纵向轴线的第二位置之间移动 身体。

    Fan-out unit and thin-film transistor array substrate having the same
    23.
    发明授权
    Fan-out unit and thin-film transistor array substrate having the same 有权
    扇出单元和薄膜晶体管阵列基板

    公开(公告)号:US08222644B2

    公开(公告)日:2012-07-17

    申请号:US12637658

    申请日:2009-12-14

    Abstract: A fan-out unit which can control a resistance difference among channels with efficient space utilization and a thin-film transistor (TFT) array substrate having the fan-out unit are presented. The fan-out unit includes: an insulating substrate; a first wiring layer which is formed on the insulating substrate and connected to a pad; a second wiring layer which is formed on the insulating substrate and connected to a TFT; and a resistance controller which is connected between the first wiring layer and the second wiring layer and includes a plurality of first resistors extending parallel to the first wiring layer and a plurality of second resistors extending perpendicular to the first resistors and alternately connecting to the first resistors, wherein the first resistors are longer than the second resistors.

    Abstract translation: 提出了一种能够控制具有高效空间利用的通道之间的电阻差的扇出单元和具有扇出单元的薄膜晶体管(TFT)阵列基板。 扇出单元包括:绝缘基板; 第一布线层,其形成在所述绝缘基板上并连接到焊盘; 第二布线层,其形成在绝缘基板上并连接到TFT; 以及电阻控制器,其连接在第一布线层和第二布线层之间,并且包括平行于第一布线层延伸的多个第一电阻器和垂直于第一电阻器延伸的多个第二电阻器,并交替地连接到第一电阻器 ,其中所述第一电阻器比所述第二电阻器长。

    Units for collecting particles, apparatus including the same and methods for collecting particles using the same
    25.
    发明授权
    Units for collecting particles, apparatus including the same and methods for collecting particles using the same 有权
    用于收集颗粒的单元,包括该颗粒的装置以及使用该颗粒收集颗粒的方法

    公开(公告)号:US08114203B2

    公开(公告)日:2012-02-14

    申请号:US12009817

    申请日:2008-01-22

    CPC classification number: C23C16/4412 B01D45/02 B01D45/04 H01L21/67103

    Abstract: A collection unit includes an exhaust conduit providing a path through which a process gas flows, a trap installed in the exhaust conduit, and a collection line connected to the trap. The trap has an inlet through which particles in the process are introduced into the trap, and the collection line penetrates a portion of the exhaust conduit to extend toward an outside region of the exhaust conduit. An apparatus including the collection unit and a method for collecting particles using the same are also provided.

    Abstract translation: 收集单元包括排气管道,其提供工艺气体通过的路径,安装在排气管道中的捕集器和连接到捕集器的收集管线。 捕集器具有入口,通过该入口将过程中的颗粒引入到捕集器中,并且收集管线穿过排气管道的一部分以朝向排气管道的外部区域延伸。 还提供了一种包括收集单元的装置和使用其的收集颗粒的方法。

    HINGE UNIT AND PORTABLE COMPUTER HAVING THE SAME
    26.
    发明申请
    HINGE UNIT AND PORTABLE COMPUTER HAVING THE SAME 有权
    铰链单元和便携式计算机

    公开(公告)号:US20110085289A1

    公开(公告)日:2011-04-14

    申请号:US12858568

    申请日:2010-08-18

    CPC classification number: G06F1/1681 Y10T16/533 Y10T16/557

    Abstract: Disclosed are a hinge unit which couples a first member and a second member, the hinge unit including: a conic shaft which is coupled to the first member, and comprises a hinge pivot, a conic unit of a truncated cone shape, the radius of which is extended in an end area of the hinge pivot, and a first rocking unit formed to an outer surface of the conic unit; and a conic sleeve which is coupled to the second member, and comprises a sleeve main body formed with a conic accommodating unit having a shape corresponding to the conic unit in an inner part of the conic accommodating unit, and a second rocking unit formed to an inner surface of the conic accommodating unit to be coupled with the first rocking unit.

    Abstract translation: 公开了一种联接第一构件和第二构件的铰链单元,所述铰链单元包括:连接到第一构件的圆锥轴,并且包括铰链枢轴,圆锥形的锥形单元,其半径 在所述铰链枢轴的端部区域中延伸,以及形成在所述圆锥单元的外表面上的第一摇摆单元; 以及耦合到所述第二构件的圆锥套筒,并且包括套筒主体,所述套筒主体形成有锥形容纳单元,所述锥形容纳单元具有与所述锥形容纳单元的内部中的所述锥形单元相对应的形状,以及第二摇摆单元, 锥形容纳单元的内表面与第一摇摆单元联接。

    CMOS image sensors and methods of manufacturing the same
    27.
    发明授权
    CMOS image sensors and methods of manufacturing the same 有权
    CMOS图像传感器及其制造方法

    公开(公告)号:US07875491B2

    公开(公告)日:2011-01-25

    申请号:US12010349

    申请日:2008-01-24

    CPC classification number: H01L27/14609 H01L27/14645 H01L27/14689

    Abstract: A complementary metal-oxide-semiconductor image sensor may include: a semiconductor substrate; a photodiode formed on a first portion of the semiconductor substrate; a transfer gate formed on the semiconductor substrate, near the photodiode, to transfer optical charges accumulated in the photodiode; a floating diffusion area formed on a second portion of the semiconductor substrate, on an opposite side of the transfer gate from the photodiode, to accommodate the optical charges; and/or a channel area formed under the transfer gate and contacting a side of the photodiode to transfer the optical charges. The transfer gate may be formed, at least in part, of transparent material. A method of manufacturing a complimentary metal-oxide-semiconductor image sensor may include: forming the photodiode; forming the floating diffusion area, separate from the photodiode; and/or forming the transfer gate, near the photodiode, to transfer optical charges accumulated in the photodiode.

    Abstract translation: 互补金属氧化物半导体图像传感器可以包括:半导体衬底; 形成在所述半导体衬底的第一部分上的光电二极管; 在所述半导体衬底上形成的传输门,在所述光电二极管附近,以传输光电二极管中累积的光电荷; 浮动扩散区,形成在半导体衬底的第二部分上,在与光电二极管的传输栅极相对的一侧,以适应光电荷; 和/或形成在传输门下方并且与光电二极管的一侧接触以传送光电荷的沟道区。 传输门可以至少部分地由透明材料形成。 互补金属氧化物半导体图像传感器的制造方法可以包括:形成光电二极管; 形成与光电二极管分离的浮动扩散区域; 和/或在光电二极管附近形成传输门,以转移积聚在光电二极管中的光电荷。

    Antifuse circuit of inverter type and method of programming the same
    30.
    发明申请
    Antifuse circuit of inverter type and method of programming the same 审中-公开
    逆变器类型的防腐电路及其编程方法

    公开(公告)号:US20100127731A1

    公开(公告)日:2010-05-27

    申请号:US12585276

    申请日:2009-09-10

    Abstract: Example embodiments are directed to an antifuse circuit of an inverter type and a method of programming the same. The antifuse circuit has improved corrosion resistance, utilizes lesser chip area and can be programmed at a low voltage. The antifuse circuit includes a PMOS transistor with the gate coupled to a drive power voltage terminal and the source coupled to an anti-pad terminal. During programming the PMOS transistor is off and the source receives an alternating current. Programming the antifuse circuit involves trapping a plurality of electron in an STI region as a result of gate-induced drain leakage. The antifuse circuit also includes an NMOS transistor with the drain connected to the drain of the PMOS transistor, the source connected to ground and the gate connected to a program control signal. The antifuse circuit results in reliable fuse programming at a low voltage by using the PMOS transistor as an anti-fuse device.

    Abstract translation: 示例性实施例涉及逆变器类型的反熔丝电路及其编程方法。 反熔丝电路具有改善的耐腐蚀性,使用较小的芯片面积,并且可以在低电压下编程。 反熔丝电路包括PMOS晶体管,其栅极耦合到驱动电源电压端子,并且源极耦合到反焊盘端子。 在编程期间,PMOS晶体管截止,源极接收交流电流。 对反熔丝电路的编程涉及在栅极引起的漏极泄漏的情况下在STI区域中捕获多个电子。 反熔丝电路还包括NMOS晶体管,漏极连接到PMOS晶体管的漏极,源极连接到地,栅极连接到编程控制信号。 反熔丝电路通过使用PMOS晶体管作为反熔丝器件,在低电压下实现可靠​​的熔丝编程。

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