公开(公告)号：US20070123059A1

公开(公告)日：2007-05-31

申请号：US11290409

申请日：2005-11-29

申请人： Michael Haverty ,  Grant Kloster ,  Sadasivan Shankar ,  Boyan Boyanov ,  Michael Goodner ,  Mansour Moinpour

发明人： Michael Haverty ,  Grant Kloster ,  Sadasivan Shankar ,  Boyan Boyanov ,  Michael Goodner ,  Mansour Moinpour

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/02345 ,  H01L21/02359 ,  H01L21/31695 ,  H01L21/76826

摘要： Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a porous dielectric layer comprising at least one active end group, and bonding at least one large atomic radii species to replace the at least one active end group, wherein a local swelling may be formed within a portion of the porous dielectric.

摘要翻译： 描述形成微电子结构的方法。 这些方法的实施方案包括形成包含至少一个活性端基的多孔电介质层，并且键合至少一个大的原子半径物质以代替至少一个活性端基，其中局部溶胀可以形成在多孔 电介质。

公开(公告)号：US20060266736A1

公开(公告)日：2006-11-30

申请号：US11137674

申请日：2005-05-24

申请人： Alexander Tregub ,  Mansour Moinpour

发明人： Alexander Tregub ,  Mansour Moinpour

IPC分类号： C03C15/00 ,  H01L21/306 ,  H01L21/302 ,  C23F1/00

CPC分类号： G01N11/142 ,  C09G1/02 ,  G01N2015/0092

摘要： A method for detecting particle agglomeration in CMP slurries. In accordance with an implementation of the invention, a CMP slurry is tested for abrasive particle agglomeration by applying an ultra high shearing force to the slurry and analyzing its rheological behavior. Through the comparison of slurry rheological behavior, implementations of the invention make it possible to detect particle agglomeration in a slurry and to distinguish between fresh and aged slurries.

摘要翻译： 一种用于检测CMP浆料中颗粒聚集的方法。 根据本发明的实施方案，通过对浆料施加超高剪切力并分析其流变行为，测试CMP浆料用于研磨颗粒团聚。 通过浆料流变行为的比较，本发明的实施使得可以检测浆料中的颗粒聚集并区分新鲜和老化的浆料。

公开(公告)号：US20060220251A1

公开(公告)日：2006-10-05

申请号：US11096678

申请日：2005-03-31

申请人： Grant Kloster ,  Boyan Boyanov ,  Michael Goodner ,  Mansour Moinpour ,  Michael Haverty

发明人： Grant Kloster ,  Boyan Boyanov ,  Michael Goodner ,  Mansour Moinpour ,  Michael Haverty

IPC分类号： H01L23/48

CPC分类号： H01L21/76826 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/31695

摘要： A method of forming a film. The method comprises depositing a porous film. The porous film has active end groups; and preventing cross-linking among said active end groups, wherein the end groups are capped with less reactive or unreactive groups.

摘要翻译： 一种形成膜的方法。 该方法包括沉积多孔膜。 多孔膜具有活性端基; 并且阻止所述活性端基之间的交联，其中末端基团被较少反应性或非反应性基团封端。

公开(公告)号：US20060214303A1

公开(公告)日：2006-09-28

申请号：US11089954

申请日：2005-03-25

申请人： Michael Goodner ,  Mansour Moinpour ,  Grant Kloster ,  Boyan Boyanov

发明人： Michael Goodner ,  Mansour Moinpour ,  Grant Kloster ,  Boyan Boyanov

IPC分类号： H01L23/48

CPC分类号： H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： An organic-framework zeolite interlayer dielectric is disclosed. The interlayer dielectric's resistance to chemical attack, its dielectric constant, its mechanical strength, or combinations thereof can be tailored by (1) varying the ratio of carbon-to-oxygen in the organic-framework zeolite, (2) by including tetravalent atoms other than silicon at tetrahedral sites in the organic-framework zeolite, or (3) by including combinations of pentavalent/trivalent atoms at tetrahedral sites in the organic-framework zeolite.

摘要翻译： 公开了一种有机骨架沸石层间电介质。 层间电介质耐化学侵蚀，其介电常数，机械强度或其组合可以通过（1）改变有机 - 骨架沸石中的碳与氧的比例来调节，（2）通过包括其它四价原子 在有机骨架沸石中的四面体位置处的硅，或（3）通过在有机骨架沸石中的四面体位置包含五价/三价原子的组合。

公开(公告)号：US20060135046A1

公开(公告)日：2006-06-22

申请号：US11014889

申请日：2004-12-17

申请人： Matthew Prince ,  Mansour Moinpour ,  Francis Tambwe ,  Gary Ding

发明人： Matthew Prince ,  Mansour Moinpour ,  Francis Tambwe ,  Gary Ding

IPC分类号： B24B7/30

CPC分类号： H01L21/31053 ,  B24B27/0076 ,  B24B37/042

摘要： A multi-platen, multi-slurry chemical mechanical polishing method comprises providing a substrate having a surface that includes at least one nitride structure and an oxide layer atop the nitride structure, performing a first CMP process on the substrate using a first platen with a silica based slurry to remove a bulk portion of the oxide layer without exposing the nitride structure, performing a second CMP process on the substrate using a second platen with a ceria based slurry to remove a residual portion of the oxide layer and to expose at least a portion of the nitride structure, and performing a third CMP process on the substrate using the first platen with a silica based slurry to remove at least one defect caused by the ceria based slurry.

公开(公告)号：US06875086B2

公开(公告)日：2005-04-05

申请号：US10340876

申请日：2003-01-10

申请人： Reza M. Golzarian ,  Mansour Moinpour

发明人： Reza M. Golzarian ,  Mansour Moinpour

IPC分类号： B24B53/007 ,  B24B53/017 ,  B24B53/12 ,  B24B1/00

CPC分类号： B24B53/017 ,  B24B53/12

摘要： Embodiments of methods and apparatus in accordance with the present invention provide a chemical mechanical planarization (CMP) process that provides single or multiple polishing pads to have a different rotational velocity, applied pressure and oscillation frequency on the surface of the substrate to address and compensate for the WIW (with-in-substrate) and WID (with-in-die) non-uniformities in planarization ability. The velocity of each polishing pad is adjustable providing a closer match to the substrate surface velocity over a particular zone to yield a linear velocity on the surface of the substrate.

摘要翻译： 根据本发明的方法和设备的实施例提供了一种化学机械平面化（CMP）工艺，其提供单个或多个抛光垫，以在衬底的表面上具有不同的旋转速度，施加的压力和振荡频率，以解决和补偿 WED（带衬底）和WID（带模）在平坦化能力方面的不均匀性。 每个抛光垫的速度是可调整的，以提供与特定区域上的衬底表面速度更接近的匹配，以在衬底的表面上产生线速度。

公开(公告)号：US20050070096A1

公开(公告)日：2005-03-31

申请号：US10676294

申请日：2003-09-30

申请人： Reza Golzarian ,  Robert Meagley ,  Seiichi Morimoto ,  Mansour Moinpour

发明人： Reza Golzarian ,  Robert Meagley ,  Seiichi Morimoto ,  Mansour Moinpour

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76843 ,  H01L21/76849 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround interconnect materials, such as by lining the walls and base of a trench and via. The unidirectional conductive material may be configured to conduct electricity in a direction corresponding to a projection to or from a contact point and conductive material overlying the unidirectional conductive material, but have no substantial electrical conductivity in other directions. Moreover, the unidirectional conductive material may be electrically conductive in a direction normal to a surface over which it is formed or in directions along or across a plane, but have no substantial electrical conductivity in other directions. Finally, the unidirectional conductive material may have properties tending to reduce metal diffusion, reduce electron migration, provide adhesion or bonding, and/or act as an etch stop.

摘要翻译： 描述了一种形成方法和包括具有单向导电材料的互连结构的器件。 单向导电材料可以覆盖互连材料，和/或可以围绕互连材料，例如通过衬套沟槽和通孔的壁和底座。 单向导电材料可以被配置为在对应于与接触点的突出物相对应的方向上导电，并且覆盖在单向导电材料上方的导电材料，但是在其它方向上没有实质的导电性。 此外，单向导电材料可以在垂直于其形成的表面的方向或沿着或跨平面的方向上导电，但在其它方向上不具有实质的导电性。 最后，单向导电材料可能具有倾向于减少金属扩散，减少电子迁移，提供粘附或粘结和/或用作蚀刻停止的性质。

公开(公告)号：US06495470B2

公开(公告)日：2002-12-17

申请号：US08580532

申请日：1995-12-29

申请人： S. M. Reza Sadjadi ,  Mansour Moinpour ,  Te Hua Lin ,  Farhad K. Moghadam

发明人： S. M. Reza Sadjadi ,  Mansour Moinpour ,  Te Hua Lin ,  Farhad K. Moghadam

IPC分类号： H01L21461

CPC分类号： H01L21/76804 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a contact opening between two conductive features over a semiconductor substrate. Oxide spacers are formed adjacent to the conductive features. A doped oxide layer is then deposited over the semiconductor substrate. Finally, the contact opening is etched through the doped oxide layer between the conductive features such that the oxide spacers are exposed within the contact opening.

摘要翻译： 一种在半导体衬底上形成两个导电特征之间的接触开口的方法。 形成与导电特征相邻的氧化物间隔物。 然后在半导体衬底上沉积掺杂的氧化物层。 最后，通过导电特征之间的掺杂氧化物层蚀刻接触开口，使得氧化物间隔物暴露在接触开口内。

公开(公告)号：US06334229B1

公开(公告)日：2002-01-01

申请号：US09227272

申请日：1999-01-07

申请人： Mansour Moinpour ,  Hoang T. Nguyen ,  Mohsen Salek ,  Young C. Park ,  Tom Bramblett ,  John M. deLarios ,  Lynn S. Ryle ,  Donald E. Anderson ,  Wilbur C. Krusell

发明人： Mansour Moinpour ,  Hoang T. Nguyen ,  Mohsen Salek ,  Young C. Park ,  Tom Bramblett ,  John M. deLarios ,  Lynn S. Ryle ,  Donald E. Anderson ,  Wilbur C. Krusell

IPC分类号： B01B1102

CPC分类号： H01L21/67046 ,  B08B1/04 ,  G11B23/505 ,  H01L21/67028 ,  Y10S134/902

摘要： An apparatus for cleaning edges of substrates is described. The present invention provides a cleaning mechanism that cleans particles off the edge of the wafer based on friction and/or a difference in tangential velocity at a point of contact between the wafer and the cleaning mechanism.

摘要翻译： 描述了一种用于清洁基板边缘的装置。 本发明提供了一种清洁机构，其基于晶片和清洁机构之间的接触点处的摩擦和/或切向速度差来清除晶片边缘的颗粒。

公开(公告)号：US5883436A

公开(公告)日：1999-03-16

申请号：US802285

申请日：1997-02-20

申请人： S. M. Reza Sadjadi ,  Mansour Moinpour ,  Te Hua Lin ,  Farhad K. Moghadam

发明人： S. M. Reza Sadjadi ,  Mansour Moinpour ,  Te Hua Lin ,  Farhad K. Moghadam

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L29/34 ,  H01L23/48

CPC分类号： H01L21/76804 ,  H01L23/5226 ,  H01L2924/0002

摘要： A method of forming a contact opening between two conductive features over a semiconductor substrate. Oxide spacers are formed adjacent to the conductive features. A doped oxide layer is then deposited over the semiconductor substrate. Finally, the contact opening is etched through the doped oxide layer between the conductive features such that the oxide spacers are exposed within the contact opening.