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    MEMS electrochemical gas sensor
    21.
    发明授权
    MEMS electrochemical gas sensor 有权
    MEMS电化学气体传感器

    公开(公告)号：US09494543B2

    公开(公告)日：2016-11-15

    申请号：US13620546

    申请日：2012-09-14

    申请人： Seung Eon Moon ,  Nak Jin Choi ,  Hyung Kun Lee ,  Jae Woo Lee ,  Woo Seok Yang ,  Jong Dae Kim

    发明人： Seung Eon Moon ,  Nak Jin Choi ,  Hyung Kun Lee ,  Jae Woo Lee ,  Woo Seok Yang ,  Jong Dae Kim

    IPC分类号： G01N27/407 ,  G01N27/18 ,  G01N33/00

    CPC分类号： G01N27/18 ,  G01N33/004

    摘要： Disclosed is an electrochemical gas sensor using micro electro mechanical systems (MEMS). The MEMS electrochemical gas sensor includes: a substrate a lower central region of which is etched by a predetermined thickness; a first insulation film formed on the substrate; a heat emitting resistance body formed on the first insulation film; a second insulation film formed on the heat emitting resistance body; a reference electrode formed in an upper central region of the second insulation film; a solid electrolyte formed on the reference electrode; and a detection electrode formed on the solid electrolyte.

    摘要翻译： 公开了一种使用微机电系统（MEMS）的电化学气体传感器。 MEMS电化学气体传感器包括：其下部中心区域被预定厚度蚀刻的衬底; 形成在所述基板上的第一绝缘膜; 形成在第一绝缘膜上的发热电阻体; 形成在所述发热电阻体上的第二绝缘膜; 参考电极，其形成在所述第二绝缘膜的上中央区域中; 形成在参比电极上的固体电解质; 和形成在固体电解质上的检测电极。

    MOLECULAR ELECTRONIC DEVICE INCLUDING ORGANIC DIELECTRIC THIN FILM AND METHOD OF FABRICATING THE SAME
    23.
    发明申请
    MOLECULAR ELECTRONIC DEVICE INCLUDING ORGANIC DIELECTRIC THIN FILM AND METHOD OF FABRICATING THE SAME 审中-公开
    包括有机电介质薄膜的分子电子器件及其制造方法

    公开(公告)号：US20100297808A1

    公开(公告)日：2010-11-25

    申请号：US12814742

    申请日：2010-06-14

    申请人： Hyoyoung LEE ,  Gyeong Sook BANG ,  Jonghyurk PARK ,  Junghyun LEE ,  Nak Jin CHOI ,  Ja Ryong KOO

    发明人： Hyoyoung LEE ,  Gyeong Sook BANG ,  Jonghyurk PARK ,  Junghyun LEE ,  Nak Jin CHOI ,  Ja Ryong KOO

    IPC分类号： H01L51/40

    CPC分类号： H01L27/285 ,  B82Y10/00 ,  G11C11/14 ,  H01L51/0073 ,  H01L51/0595

    摘要： Provided are a molecular electronic device and a method of fabricating the molecular electronic device. The molecular electronic device includes a substrate, an organic dielectric thin film formed over the substrate, a molecular active layer formed on the organic dielectric thin film and having a charge trap site, and an electrode formed on the molecular active layer. The organic dielectric thin film may be immobilized on the electrode or a Si layer by a self-assembled method. The organic dielectric thin film may include first and second molecular layers bound together through hydrogen bonds. An organic compound may be self-assembled over the substrate to form the organic dielectric thin film. The organic compound may include an M′-R-T structure, where M′, R and T represent a thiol or silane derivative, a saturated or unsaturated C1 to C20 hydrocarbon group which is substituted or unsubstituted with fluorine (F), and an amino(—NH2) or carboxyl (—COOH) group, respectively.

    摘要翻译： 提供分子电子器件和制造分子电子器件的方法。 分子电子器件包括衬底，在衬底上形成的有机电介质薄膜，形成在有机电介质薄膜上并具有电荷陷阱位置的分子活性层和形成在分子活性层上的电极。 可以通过自组装方法将有机电介质薄膜固定在电极或Si层上。 有机电介质薄膜可以包括通过氢键结合在一起的第一和第二分子层。 有机化合物可以在衬底上自组装形成有机介电薄膜。 有机化合物可以包括M'-RT结构，其中M'，R和T表示硫醇或硅烷衍生物，被氟（F）取代或未取代的饱和或不饱和的C1至C20烃基和氨基（ -NH 2）或羧基（-COOH）基团。

    Method of manufacturing nanoelectrode lines using nanoimprint lithography process
    24.
    发明授权
    Method of manufacturing nanoelectrode lines using nanoimprint lithography process 有权
    使用纳米压印光刻工艺制造纳米电极线的方法

    公开(公告)号：US07811934B2

    公开(公告)日：2010-10-12

    申请号：US12045769

    申请日：2008-03-11

    申请人： Mi Hee Jeong ,  Hyo Young Lee ,  Nak Jin Choi ,  Kang Ho Park

    发明人： Mi Hee Jeong ,  Hyo Young Lee ,  Nak Jin Choi ,  Kang Ho Park

    IPC分类号： H01L21/033 ,  H01L21/311

    CPC分类号： H01L21/31144 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0331 ,  H01L51/0022 ,  Y10S977/889

    摘要： Provided are a method of manufacturing nanoelectrode lines. The method includes the steps of: sequentially forming an insulating layer, a first photoresist layer, and a drop-shaped second photoresist on a substrate; disposing an imprint mold having a plurality of molding patterns over the second photoresist; applying pressure to the mold to allow the second photoresist to flow into the mold patterns; irradiating ultraviolet (UV) light onto the mold to cure the second photoresist; removing the mold from the cured second photoresist and patterning the second photoresist; patterning the first photoresist layer using the patterned second photoresist as a mask; patterning the insulating layer; and forming a metal layer between the patterned insulating layers. In this method, metal electrode lines are formed between insulating layers using an imprint lithography process, so that nanoelectronic devices can be freed from crosstalk between the metal electrode lines.

    摘要翻译： 提供一种制造纳米电极线的方法。 该方法包括以下步骤：在衬底上依次形成绝缘层，第一光致抗蚀剂层和滴形第二光致抗蚀剂; 在所述第二光致抗蚀剂上设置具有多个模制图案的压印模具; 向模具施加压力以允许第二光致抗蚀剂流入模具图案; 将UV（UV）光照射到模具上以固化第二光致抗蚀剂; 从固化的第二光致抗蚀剂移除模具并图案化第二光致抗蚀剂; 使用图案化的第二光致抗蚀剂作为掩模来图案化第一光致抗蚀剂层; 图案化绝缘层; 以及在图案化的绝缘层之间形成金属层。 在该方法中，使用压印光刻工艺在绝缘层之间形成金属电极线，使得纳米电子器件可以免除金属电极线之间的串扰。

    METHOD OF MANUFACTURING NANOELECTRODE LINES USING NANOIMPRINT LITHOGRAPHY PROCESS
    25.
    发明申请
    METHOD OF MANUFACTURING NANOELECTRODE LINES USING NANOIMPRINT LITHOGRAPHY PROCESS 有权
    使用纳米压印法制造纳米电子线的方法

    公开(公告)号：US20090023288A1

    公开(公告)日：2009-01-22

    申请号：US12045769

    申请日：2008-03-11

    申请人： Mi Hee Jeong ,  Hyo Young Lee ,  Nak Jin Choi ,  Kang Ho Park

    发明人： Mi Hee Jeong ,  Hyo Young Lee ,  Nak Jin Choi ,  Kang Ho Park

    IPC分类号： H01L21/768

    CPC分类号： H01L21/31144 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0331 ,  H01L51/0022 ,  Y10S977/889

    摘要： Provided are a method of manufacturing nanoelectrode lines. The method includes the steps of: sequentially forming an insulating layer, a first photoresist layer, and a drop-shaped second photoresist on a substrate; disposing an imprint mold having a plurality of molding patterns over the second photoresist; applying pressure to the mold to allow the second photoresist to flow into the mold patterns; irradiating ultraviolet (UV) light onto the mold to cure the second photoresist; removing the mold from the cured second photoresist and patterning the second photoresist; patterning the first photoresist layer using the patterned second photoresist as a mask; patterning the insulating layer; and forming a metal layer between the patterned insulating layers. In this method, metal electrode lines are formed between insulating layers using an imprint lithography process, so that nanoelectronic devices can be freed from crosstalk between the metal electrode lines.

    摘要翻译： 提供一种制造纳米电极线的方法。 该方法包括以下步骤：在衬底上依次形成绝缘层，第一光致抗蚀剂层和滴形第二光致抗蚀剂; 在所述第二光致抗蚀剂上设置具有多个模制图案的压印模具; 向模具施加压力以允许第二光致抗蚀剂流入模具图案; 将UV（UV）光照射到模具上以固化第二光致抗蚀剂; 从固化的第二光致抗蚀剂移除模具并图案化第二光致抗蚀剂; 使用图案化的第二光致抗蚀剂作为掩模来图案化第一光致抗蚀剂层; 图案化绝缘层; 以及在图案化的绝缘层之间形成金属层。 在该方法中，使用压印光刻工艺在绝缘层之间形成金属电极线，使得纳米电子器件可以免除金属电极线之间的串扰。

    Compound having thiol anchoring group, method of synthesizing the same, and molecular electronic device having molecular active layer formed using the compound
    27.
    发明申请
    Compound having thiol anchoring group, method of synthesizing the same, and molecular electronic device having molecular active layer formed using the compound 失效
    具有硫醇锚定基团的化合物，其合成方法和使用该化合物形成分子活性层的分子电子器件

    公开(公告)号：US20070073058A1

    公开(公告)日：2007-03-29

    申请号：US11398188

    申请日：2006-04-04

    申请人： Hyoyoung Lee ,  Junghyun Lee ,  Heeyoel Baek ,  Gyeong Bang ,  Jonghyurk Park ,  Nak-Jin Choi ,  Kun Jun ,  Seung Shin

    发明人： Hyoyoung Lee ,  Junghyun Lee ,  Heeyoel Baek ,  Gyeong Bang ,  Jonghyurk Park ,  Nak-Jin Choi ,  Kun Jun ,  Seung Shin

    IPC分类号： C07D417/00

    CPC分类号： C07D417/12 ,  C07D333/42

    摘要： Provided are an electron donor-azo-electron acceptor compound having a thiol-based anchoring group, a method of synthesizing the compound, and a molecular electronic device having a molecular active layer formed of the compound. The compound for forming a molecular electronic device includes an azo compound that has a dinitrothiophene group and an aminobenzene group having thiol derivatives. The compound forms a molecular active layer in the molecular electronic devices. The molecular active layer is self-assembled on an electrode using the thiol derivative in the azo compound as an anchoring group. The molecular active layer in the molecular electronic device forms a switching device switching between an on-state and an off-state in response to a voltage applied to electrodes or a memory device storing a predetermined electric signal in response to a voltage applied to the electrodes.

    摘要翻译： 提供具有硫醇基锚定基团的电子给体 - 偶氮电子受体化合物，合成该化合物的方法和具有由该化合物形成的分子活性层的分子电子器件。 用于形成分子电子器件的化合物包括具有二硝基噻吩基团和具有硫醇衍生物的氨基苯基团的偶氮化合物。 该化合物在分子电子器件中形成分子活性层。 使用偶氮化合物中的硫醇衍生物作为锚定基团，在电极上自组装分子活性层。 分子电子器件中的分子活性层响应于施加到电极的电压或存储预定电信号的存储器件响应于施加到电极的电压而形成在导通状态和截止状态之间切换的开关器件 。