-
公开(公告)号：US5978352A
公开(公告)日：1999-11-02
申请号：US673046
申请日：1996-07-01
CPC分类号： B60R16/0315 , B60R2016/0322 , Y10T307/469
摘要： A multiplex transmission system is made up of a master load control unit which is connected to a multiplex transmission network and is capable of executing a multiplexing operation based on control specification information as a master system, slave load control units capable of the multiplexing operation as a slave system, and a nonvolatile removable external storage unit capable of reading the control specification information as required. Abnormalities associated with the multiplexing operation which arise in the multiplex transmission system are detected, and load control units in an abnormal condition can be restored to a normal condition by resetting.
摘要翻译： 多路复用传输系统由连接到复用传输网络的主负载控制单元组成，并且能够执行基于作为主系统的控制指定信息的复用操作，能够进行多路复用操作的从属负载控制单元 从系统和能够根据需要读取控制规范信息的非易失性可移动外部存储单元。 检测与复用传输系统中出现的多路复用操作有关的异常情况，异常状态下的负载控制单元可通过复位恢复正常状态。
-
22.发明申请公开(公告)号：US20120217626A1
公开(公告)日：2012-08-30
申请号：US13353666
申请日：2012-01-19
IPC分类号： H01L23/495 , H01L21/58
CPC分类号： H03F1/3247 , H01L21/4825 , H01L23/49524 , H01L23/49558 , H01L23/49562 , H01L24/36 , H01L24/40 , H01L24/84 , H01L2224/40245 , H01L2224/83801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12032 , H01L2924/1306 , H01L2924/13064 , H01L2924/181 , H03F3/189 , H03F3/24 , H03F2200/204 , H03F2200/451 , H01L2924/00 , H01L2924/00012 , H01L2224/37099 , H01L2224/84
摘要： A method for manufacturing a semiconductor device, includes: placing a seal layer including a connection conductive film on the surface so that the connection conductive film is in contact with an electrode of a semiconductor element and a lead; electrically coupling the electrode and the lead through the connection conductive film; and sealing the semiconductor element by the seal layer.
摘要翻译： 一种半导体器件的制造方法，其特征在于，包括：将具有连接导电膜的密封层放置在所述表面上，使得所述连接导电膜与半导体元件的电极和引线接触; 通过连接导电膜电连接电极和引线; 并通过密封层密封半导体元件。
-
23.发明授权Method for processing a base that includes connecting a first base to a second base with an insulating film 有权用于处理基底的方法，其包括用绝缘膜将第一基底连接到第二基底公开(公告)号：US07514295B2
公开(公告)日：2009-04-07
申请号：US11196487
申请日：2005-08-04
IPC分类号： H01L21/60
CPC分类号： H01L24/13 , H01L21/563 , H01L24/02 , H01L24/06 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05578 , H01L2224/06102 , H01L2224/1134 , H01L2224/1147 , H01L2224/1184 , H01L2224/13028 , H01L2224/13082 , H01L2224/13144 , H01L2224/1357 , H01L2224/13639 , H01L2224/13644 , H01L2224/13664 , H01L2224/13669 , H01L2224/16106 , H01L2224/16225 , H01L2224/2784 , H01L2224/32225 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/8113 , H01L2224/81132 , H01L2224/81191 , H01L2224/83121 , H01L2224/83191 , H01L2224/83856 , H01L2924/00 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/19041 , Y10T29/49126 , H01L2924/00014 , H01L2224/13099 , H01L2224/29099
摘要： The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.
摘要翻译： 本发明实现了一种高可靠性的半导体器件，其允许在低负载和低成本下形成具有均匀高度，平坦和平滑的金属端子并且以低损伤安装。 电极5和绝缘膜6均由具有固体特性的材料形成，并且在室温下不显示粘合性，并且在不低于第一温度的温度下显示粘附性，并且在不低于 第二温度高于第一温度。 半导体芯片1a的电极5和绝缘膜6的表面与硬质切削工具一样平坦化，如金刚石等。
-
公开(公告)号：US07402461B2
公开(公告)日：2008-07-22
申请号：US11019157
申请日：2004-12-23
IPC分类号： H01L21/44
CPC分类号： H01L24/12 , H01L21/563 , H01L23/3157 , H01L24/11 , H01L24/16 , H01L24/17 , H01L24/27 , H01L24/29 , H01L24/81 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05572 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/1134 , H01L2224/1148 , H01L2224/13099 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/81801 , H01L2224/81894 , H01L2224/83191 , H01L2224/83856 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/15311 , H01L2924/1579 , H01L2924/00 , H01L2924/00012 , H01L2924/00015 , H01L2924/00014 , H01L2924/0665 , H01L2224/29099
摘要： The present invention is aimed at providing a method of connecting base materials capable of forming metal terminals having a uniform height and smooth surface with a low cost, and of realizing a low-damage mounting, in which a work is planarized while keeping the temperature of the insulating film, possibly elevated due to frictional heat generated during cutting using a cutting tool, lower than 80° C., and keeping the temperature range lower than 80° C. throughout the entire period of the cutting, the electrodes and electrodes are opposed and brought into contact at a temperature of 80° C. or above but lower than the curing temperature of the insulating film, the insulating film is liquefied and a space between the electrodes and electrodes is filled with an insulating resin composing the insulating film, and the insulating resin is cured at the curing temperature or above.
摘要翻译： 本发明旨在提供一种能够以低成本形成具有均匀高度和平滑表面的金属端子的基材的方法，并且实现了低损伤安装，其中工件平坦化同时保持温度 绝缘膜由于在使用切割工具的切割期间产生的摩擦热可能升高，低于80℃，并且在切割的整个整个周期内保持温度范围低于80℃，电极和电极相对 并在80℃以上且低于绝缘膜的固化温度的温度下接触，使绝缘膜液化，并且用构成绝缘膜的绝缘树脂填充电极和电极之间的空间，以及 绝缘树脂在固化温度以上固化。
-
公开(公告)号：US20050227474A1
公开(公告)日：2005-10-13
申请号：US11019157
申请日：2004-12-23
CPC分类号： H01L24/12 , H01L21/563 , H01L23/3157 , H01L24/11 , H01L24/16 , H01L24/17 , H01L24/27 , H01L24/29 , H01L24/81 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05572 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/1134 , H01L2224/1148 , H01L2224/13099 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/81801 , H01L2224/81894 , H01L2224/83191 , H01L2224/83856 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/15311 , H01L2924/1579 , H01L2924/00 , H01L2924/00012 , H01L2924/00015 , H01L2924/00014 , H01L2924/0665 , H01L2224/29099
摘要： The present invention is aimed at providing a method of connecting base materials capable of forming metal terminals having a uniform height and smooth surface with a low cost, and of realizing a low-damage mounting, in which a work is planarized while keeping the temperature of the insulating film, possibly elevated due to frictional heat generated during cutting using a cutting tool, lower than 80° C., and keeping the temperature range lower than 80° C. throughout the entire period of the cutting, the electrodes and electrodes are opposed and brought into contact at a temperature of 80° C. or above but lower than the curing temperature of the insulating film, the insulating film is liquefied and a space between the electrodes and electrodes is filled with an insulating resin composing the insulating film, and the insulating resin is cured at the curing temperature or above.
摘要翻译： 本发明旨在提供一种能够以低成本形成具有均匀高度和平滑表面的金属端子的基材的方法，并且实现了低损伤安装，其中工件平坦化同时保持温度 绝缘膜由于在使用切割工具的切割期间产生的摩擦热可能升高，低于80℃，并且在切割的整个整个周期内保持温度范围低于80℃，电极和电极相对 并在80℃以上且低于绝缘膜的固化温度的温度下接触，使绝缘膜液化，并且用构成绝缘膜的绝缘树脂填充电极和电极之间的空间，以及 绝缘树脂在固化温度以上固化。
-
公开(公告)号：US6009105A
公开(公告)日：1999-12-28
申请号：US671647
申请日：1996-06-28
IPC分类号： B60R16/02 , B60R16/023 , B60R16/03 , H04L12/43 , H04B7/212
CPC分类号： B60R16/0315 , B60R2016/0322
摘要： In a multiplex communication system for a bus vehicle, including: a plurality of loads disposed in the bus vehicle and connected to a wire harness; a switch unit for inputting signals to operate the loads and generating multiplex data; a first load drive unit for controlling the loads placed mainly on a floor of the bus vehicle; and a second load drive unit for controlling the loads placed mainly on a ceiling of the bus vehicle, the multiplex communication system further includes a multiplex line interconnecting the switch unit, the first load drive unit and the second load drive unit, and transmitting the multiplex data to the first and second load drive units to execute a multiplex communication, each the first and second load drive units controlling the loads in accordance with the multiplex data received through the multiplex line from the switch unit. The wire harness can be formed with high assembling performance or productivity in the bus vehicle.
摘要翻译： 一种用于总线车辆的多路复用通信系统，包括：多个负载，设置在总线车辆中并连接到线束; 用于输入信号以操作所述负载并产生多路复用数据的开关单元; 用于控制主要放置在公交车辆的地板上的负载的第一负载驱动单元; 以及第二负载驱动单元，用于控制主要放置在总线车辆的天花板上的负载，所述多路通信系统还包括互连所述开关单元，所述第一负载驱动单元和所述第二负载驱动单元的多路复用线路， 数据到第一和第二负载驱动单元以执行多路复用通信，每个第一和第二负载驱动单元根据通过多路复用线从开关单元接收的多路复用数据来控制负载。 线束可以形成为具有高的组装性能或公交车辆的生产率。
-
公开(公告)号：US5859845A
公开(公告)日：1999-01-12
申请号：US684182
申请日：1996-07-19
CPC分类号： B60R16/0315 , B60R2016/0322
摘要： A control signal generated as a result of the actuation of each of control switches of a control section is multiplexed by a multiplexing section, and the thus multiplexed signal is sent to a multiplex transmission line. Load control sections receive the multiplexed control signal sent over the multiplex transmission line. The load control sections then control the electric power fed to a corresponding one of loads on the basis of the received control signal. Control data, representing the form of output control of the corresponding load which is controlled as a result of the actuation of the control switch, are stored according to the control switches. Control means control the electric power fed to the load on the basis of the control signal using the control data.
摘要翻译： 作为控制部分的每个控制开关的致动结果产生的控制信号由多路复用部分复用，并且将这样复用的信号发送到多路传输线路。 负载控制部分接收通过多路传输线路发送的复用控制信号。 然后，负载控制部根据接收到的控制信号来控制供给到相应一个负载的电力。 根据控制开关存储表示作为控制开关的动作控制的对应负载的输出控制的形式的控制数据。 控制装置使用控制数据控制基于控制信号馈送到负载的电力。
-
公开(公告)号：US5768549A
公开(公告)日：1998-06-16
申请号：US673045
申请日：1996-07-01
申请人： Kazunori Ryu , Nobuhiro Imaizumi
发明人： Kazunori Ryu , Nobuhiro Imaizumi
CPC分类号： G05F1/46
摘要： An input interface using a multiplex type input circuit for selecting a desired one, as its output, of a plurality of input power signals in accordance with a control signal generated by a CPU and for supplying the selected input power signal to an electronic element unit.
摘要翻译： 一种使用多路复用型输入电路的输入接口，用于根据由CPU产生的控制信号选择所需的多个输入功率信号的输出，并将所选择的输入功率信号提供给电子元件单元。
-
公开(公告)号：US5523633A
公开(公告)日：1996-06-04
申请号：US96000
申请日：1993-07-23
CPC分类号： H01H1/605 , Y10T307/924
摘要： Disclosed is a corrosion preventing circuit for a switch which, even if a large current switch is used for a small current system such as an electronic unit, can improve long-term durability of the switch in a manner similar to the present level without increasing the burden on the system side, thereby ensuring the reliability of devices belonging to the system. A series circuit consisting of a switching means and a current limiting resistor is connected in parallel to a resistor that is connected in series between a dc power supply and a large current switch. A control circuit turns on the switching means by generating a pulse of a predetermined time width after a predetermined time in accordance with the turning on of the large current switch. The current flowing while the switching means is being turned on is applied to the large current switch, so that an oxide film formed at the contact of the switch is destroyed.
摘要翻译： 公开了一种用于开关的防腐蚀电路，即使使用大电流开关用于诸如电子单元的小电流系统，可以以与当前水平相似的方式提高开关的长期耐用性，而不增加 系统侧的负担，从而确保属于系统的设备的可靠性。 由开关装置和限流电阻组成的串联电路与直流电源和大电流开关串联连接的电阻并联连接。 控制电路根据大电流开关的接通，在预定时间之后产生预定时间宽度的脉冲来接通开关装置。 当开关装置被接通时流动的电流被施加到大电流开关，使得在开关接触处形成的氧化膜被破坏。
-
公开(公告)号：US20120244665A1
公开(公告)日：2012-09-27
申请号：US13404521
申请日：2012-02-24
IPC分类号： H01L21/60
CPC分类号： H01L24/81 , H01L24/11 , H01L24/13 , H01L24/75 , H01L2224/11013 , H01L2224/1184 , H01L2224/13111 , H01L2224/13124 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/16245 , H01L2224/75101 , H01L2224/81065 , H01L2224/81075 , H01L2224/81191 , H01L2224/81193 , H01L2224/81203 , H01L2224/8183 , H01L2224/83192 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/13064 , H01L2924/00014 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes: forming a first layer including crystals by processing a surface of a first electrode of a semiconductor element; forming a second layer including crystals by processing a surface of a second electrode of a mounting member on which the semiconductor element is mounted; reducing a first oxide film present over or in the first layer and a second oxide film present over or in the second layer at a first temperature, the first temperature being lower than a second temperature at which a first metal included in the first electrode diffuses in a solid state and being lower than a third temperature at which a second metal included in the second electrode diffuses in a solid state; and bonding the first layer and the second layer to each other by solid-phase diffusion.
摘要翻译： 一种制造半导体器件的方法包括：通过处理半导体元件的第一电极的表面，形成包括晶体的第一层; 通过加工其上安装有半导体元件的安装构件的第二电极的表面，形成包括晶体的第二层; 在第一温度下减少存在于第一层上或第一层中的第一氧化物膜和存在于第二层中或第二层中的第二氧化物膜，第一温度低于包含在第一电极中的第一金属扩散的第二温度 并且低于包含在第二电极中的第二金属以固态扩散的第三温度; 以及通过固相扩散将第一层和第二层彼此结合。
-
-
-
-
-
-
-
-
-
搜索结果
40 条记录 (耗时 0.027 秒)
