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21.发明授权Methods for real-time contamination, environmental, or physical monitoring of a photomask 失效光掩模的实时污染，环境或物理监测的方法公开(公告)号：US08456625B2
公开(公告)日：2013-06-04
申请号：US12182668
申请日：2008-07-30
CPC分类号： G03F7/70866 , G03F7/7085 , G03F7/70975
摘要： Methods for real-time contamination, environmental, or physical monitoring of a photomask. An attribute of a photomask is monitored using a sensor of an electronics package attached to the photomask. The methods further include generating one or more sensor signals relating to the monitored attribute with the sensor and transmitting the one or more sensor signals from the electronics package to a control system.
摘要翻译： 光掩模的实时污染，环境或物理监测的方法。 使用附接到光掩模的电子封装的传感器监视光掩模的属性。 所述方法还包括利用所述传感器生成与所监视的属性相关的一个或多个传感器信号，并将所述一个或多个传感器信号从所述电子装置封装传送到控制系统。
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公开(公告)号：US20130113577A1
公开(公告)日：2013-05-09
申请号：US13292729
申请日：2011-11-09
申请人： James W. ADKISSON , Panglijen Candra , Thomas J. Dunbar , Mark D. Jaffe , Robert K. Leidy , Anthony K. Stamper
发明人： James W. ADKISSON , Panglijen Candra , Thomas J. Dunbar , Mark D. Jaffe , Robert K. Leidy , Anthony K. Stamper
CPC分类号： H03H9/545 , H03H9/0547 , H03H9/171 , H03H9/173 , H03H9/56 , H03H2009/02204 , Y10T29/42
摘要： Tunable filter structures, methods of manufacture and design structures are disclosed. The method of forming a filter structure includes forming a piezoelectric resonance filter over a cavity structure. The forming of the piezoelectric resonance filter includes: forming an upper electrode on one side of a piezoelectric material; and forming a lower electrode on an opposing side of the piezoelectric material. The method further includes forming a micro-electro-mechanical structure (MEMS) cantilever beam at a location in which, upon actuation, makes contact with the piezoelectric resonance filter.
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公开(公告)号：US08217259B2
公开(公告)日：2012-07-10
申请号：US12474836
申请日：2009-05-29
IPC分类号： H01L31/00
CPC分类号： H01L31/18 , H01L31/02168 , H01L31/0543 , Y02E10/52
摘要： Enhanced efficiency solar cells and methods of manufacture of such cells are described herein. In an illustrative example, the solar cell includes at least one or more collector lens bars each of which extend on sides of front contacts and positioned over a respective active area of one or more active areas in such as position as to guide light onto the one or more active areas. A protective layer covers the at least one or more collector lens bars.
摘要翻译： 本文描述了提高效率的太阳能电池和这种电池的制造方法。 在说明性示例中，太阳能电池包括至少一个或多个收集透镜杆，每个收集透镜杆在前触点的侧面上延伸，并且位于一个或多个有源区域的相应有源区域上，以将光引导到一个 或更多的活动区域。 保护层覆盖至少一个或多个收集透镜条。
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公开(公告)号：US07928527B2
公开(公告)日：2011-04-19
申请号：US12132875
申请日：2008-06-04
IPC分类号： H01L29/72
CPC分类号： H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636
摘要： A plurality of image sensor structures and a plurality of methods for fabricating the plurality of image sensor structures provide for inhibited cracking and delamination of a lens capping layer with respect to a planarizing layer within the plurality of image sensor structures. Particular image sensor structures and related methods include at least one dummy lens layer of different dimensions than active lens layer located over a circuitry portion of a substrate within the particular image sensor structures. Additional particular image sensor structures include at least one of an aperture within the planarizing layer and a sloped endwall of the planarizing layer located over a circuitry portion within the particular image sensor structures.
摘要翻译： 多个图像传感器结构和用于制造多个图像传感器结构的多种方法提供了相对于多个图像传感器结构内的平坦化层的透镜封盖层的抑制性破裂和分层。 特定的图像传感器结构和相关方法包括与位于特定图像传感器结构内的衬底的电路部分之上的有源透镜层不同的至少一个虚拟透镜层。 另外特定的图像传感器结构包括平坦化层内的孔径和位于特定图像传感器结构内的电路部分上方的平坦化层的倾斜端壁中的至少一个。
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25.发明授权公开(公告)号：US07898049B2
公开(公告)日：2011-03-01
申请号：US11378020
申请日：2006-03-17
IPC分类号： H01L31/0232
CPC分类号： H01L27/14685 , H01L27/14627 , H01L31/02327
摘要： A structure and method for increasing the sensitivity of pixel sensors by eliminating a gap space formed between adjacent microlens structures in a pixel sensor array. Advantageously, exposure and flowing conditions are such that adjacent microlens structures touch (are webbed) at a horizontal cross-section, yet have a round lens shape in all directions. Particularly, exposure and flowing conditions are such that each touching microlens structure is formed to have a matched uniform radius of curvature at a horizontal cross-section and at a 45 degree cross-sections. To improve quality of mircrolens structure uniformity exhibited at all pixel locations including those near a pixel array edge or corner, a top anti-reflective coating layer is applied on top of a photoresist layer prior to the exposure and flowing steps.
摘要翻译： 通过消除在像素传感器阵列中相邻的微透镜结构之间形成的间隙空间来增加像素传感器的灵敏度的结构和方法。 有利地，曝光和流动条件使得相邻的微透镜结构以水平横截面接触（被蹼状），但在所有方向上具有圆形透镜形状。 特别地，曝光和流动条件使得每个触摸的微透镜结构形成为在水平横截面和45度横截面处具有匹配的均匀的曲率半径。 为了提高在包括像素阵列边缘或角落附近的像素位置的所有像素位置处显示的微电极结构均匀性的质量，在曝光和流动步骤之前，将顶部抗反射涂层施加在光致抗蚀剂层的顶部。
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26.发明授权公开(公告)号：US07829965B2
公开(公告)日：2010-11-09
申请号：US10908601
申请日：2005-05-18
申请人： Timothy J. Hoague , Robert K. Leidy
发明人： Timothy J. Hoague , Robert K. Leidy
IPC分类号： H01L31/0232 , G03F7/20
CPC分类号： H01L27/14685 , H01L27/14627 , H01L31/02327
摘要： A structure and method for increasing the sensitivity of pixel sensors by eliminating a gap space formed between adjacent microlens structures in a pixel sensor array. Advantageously, exposure and flowing conditions are such that adjacent microlens structures touch (are webbed) at a horizontal cross-section, yet have a round lens shape in all directions. Particularly, exposure and flowing conditions are such that each touching microlens structure is formed to have a matched uniform radius of curvature at a horizontal cross-section and at a 45 degree cross-sections.
摘要翻译： 通过消除在像素传感器阵列中相邻的微透镜结构之间形成的间隙空间来增加像素传感器的灵敏度的结构和方法。 有利地，曝光和流动条件使得相邻的微透镜结构以水平横截面接触（被蹼状），但在所有方向上具有圆形透镜形状。 特别地，曝光和流动条件使得每个触摸的微透镜结构形成为在水平横截面和45度横截面处具有匹配的均匀的曲率半径。
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27.发明授权Image sensor including spatially different active and dark pixel interconnect patterns 有权图像传感器包括空间不同的有源和暗像素互连图案公开(公告)号：US07825416B2
公开(公告)日：2010-11-02
申请号：US12423055
申请日：2009-04-14
IPC分类号： H01L29/786
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14645 , H01L27/14687
摘要： An interconnect layout, an image sensor including the interconnect layout and a method for fabricating the image sensor each use a first electrically active physical interconnect layout pattern within an active pixel region and a second electrically active physical interconnect layout pattern spatially different than the first electrically active physical interconnect layout pattern within a dark pixel region. The second electrically active physical interconnect layout pattern includes at least one electrically active interconnect layer interposed between a light shield layer and a photosensor region aligned therebeneath, thus generally providing a higher wiring density. The higher wiring density within the second layout pattern provides that that the image sensor may be fabricated with enhanced manufacturing efficiency and a reduction of metallization levels.
摘要翻译： 互连布局，包括互连布局的图像传感器和用于制造图像传感器的方法各自使用有源像素区域内的第一电活性物理互连布局图案和在空间上不同于第一电活动的第二电活动物理互连布局图案 物理互连布局图案在暗像素区域内。 第二电活动物理互连布局图案包括插入在遮光层和在其下对准的光电传感器区域之间的至少一个电活动互连层，因此通常提供更高的布线密度。 在第二布局图案中更高的布线密度提供了图像传感器可以制造成具有增强的制造效率和金属化水平的降低。
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公开(公告)号：US07781781B2
公开(公告)日：2010-08-24
申请号：US11560882
申请日：2006-11-17
申请人： James W. Adkisson , Jeffrey P. Gambino , Zhong-Xiang He , Mark D. Jaffe , Robert K. Leidy , Stephen E. Luce , Richard J. Rassel , Edmund J. Sprogis
发明人： James W. Adkisson , Jeffrey P. Gambino , Zhong-Xiang He , Mark D. Jaffe , Robert K. Leidy , Stephen E. Luce , Richard J. Rassel , Edmund J. Sprogis
IPC分类号： H01L27/15
CPC分类号： H01L27/14687 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L2224/05001 , H01L2224/05008 , H01L2224/05124 , H01L2224/05548 , H01L2224/05569 , H01L2224/05647 , H01L2224/13 , H01L2924/00014
摘要： A CMOS image sensor array and method of fabrication. The CMOS imager sensor array comprises a substrate; an array of light receiving pixel structures formed above the substrate, the array having formed therein “m” levels of conductive structures, each level formed in a corresponding interlevel dielectric material layer; a dense logic wiring region formed adjacent to the array of light receiving pixel structures having “n” levels of conductive structures, each level formed in a corresponding interlevel dielectric material layer, where n>m. A microlens array having microlenses and color filters formed above the interlevel dielectric material layer, a microlens and respective color filter in alignment with a respective light receiving structure formed at a surface of the substrate. A top surface of the interlevel dielectric material layer beneath the microlens array is recessed from a top surface of the interlevel dielectric material layers of the dense logic wiring region.
摘要翻译： CMOS图像传感器阵列及其制造方法。 CMOS成像器传感器阵列包括衬底; 形成在衬底上方的光接收像素结构的阵列，阵列中形成有“m”级的导电结构，每个级形成在相应的层间介电材料层中; 与具有“n”级的导电结构的光接收像素结构的阵列相邻形成的密集的逻辑布线区域，每个层级形成在相应的层间电介质材料层中，其中n> m。 具有形成在层间电介质材料层上方的微透镜和滤色器的微透镜阵列，与形成在衬底表面处的各个光接收结构对准的微透镜和相应的滤色器。 微透镜阵列下面的层间介电材料层的顶表面从密集逻辑布线区域的层间介电材料层的顶表面凹陷。
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公开(公告)号：US07687210B2
公开(公告)日：2010-03-30
申请号：US11767633
申请日：2007-06-25
CPC分类号： G03F7/70475 , G03F7/70466 , Y10S430/143
摘要： A method for manufacturing a stitched space in a semiconductor circuit implements a photolithographic process for printing one or more image fields on a wafer surface, each image field corresponding to a portion of a circuit or device and including a space that is to be stitched in adjacent image fields. The space to be stitched that is produced from an image field is overlapped onto the space to be stitched produced from the adjacent image field, however, the overlapped space from the adjacent image fields is intentionally misaligned. The stitched space is then subject to the double light exposure dose to print the stitched space, with the result that an overlay tolerance of the stitched space is improved.
摘要翻译： 用于制造半导体电路中的缝合空间的方法实现了用于在晶片表面上印刷一个或多个图像场的光刻工艺，每个图像场对应于电路或器件的一部分，并且包括将被相邻的缝合空间 图像字段。 从图像场产生的要缝制的空间被重叠在从相邻图像场产生的待缝合的空间上，然而，与相邻图像场的重叠空间被有意地对准。 然后缝合的空间经受双倍曝光剂量以打印缝合空间，结果是改善了缝合空间的覆盖公差。
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30.发明申请IMAGE SENSOR INCLUDING SPATIALLY DIFFERENT ACTIVE AND DARK PIXEL INTERCONNECT PATTERNS 有权图像传感器包括空间不同的主动和深色像素互连图案公开(公告)号：US20090224349A1
公开(公告)日：2009-09-10
申请号：US12423055
申请日：2009-04-14
IPC分类号： H01L31/0232 , H01L31/0224
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14645 , H01L27/14687
摘要： An interconnect layout, an image sensor including the interconnect layout and a method for fabricating the image sensor each use a first electrically active physical interconnect layout pattern within an active pixel region and a second electrically active physical interconnect layout pattern spatially different than the first electrically active physical interconnect layout pattern within a dark pixel region. The second electrically active physical interconnect layout pattern includes at least one electrically active interconnect layer interposed between a light shield layer and a photosensor region aligned therebeneath, thus generally providing a higher wiring density. The higher wiring density within the second layout pattern provides that that the image sensor may be fabricated with enhanced manufacturing efficiency and a reduction of metallization levels.
摘要翻译： 互连布局，包括互连布局的图像传感器和用于制造图像传感器的方法各自使用有源像素区域内的第一电活性物理互连布局图案和在空间上不同于第一电活动的第二电活动物理互连布局图案 物理互连布局图案在暗像素区域内。 第二电活动物理互连布局图案包括插入在遮光层和在其下对准的光电传感器区域之间的至少一个电活动互连层，因此通常提供更高的布线密度。 在第二布局图案中更高的布线密度提供了图像传感器可以制造成具有增强的制造效率和金属化水平的降低。
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