公开(公告)号：US08609442B2

公开(公告)日：2013-12-17

申请号：US13824859

申请日：2011-10-11

申请人： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

发明人： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

IPC分类号： H01L21/00 ,  G01R31/26 ,  H01L29/08 ,  H01L23/58 ,  C23C16/00 ,  B05C11/00

CPC分类号： H01L22/20 ,  C23C14/042 ,  C23C14/24 ,  C23C14/54 ,  H01L27/3211 ,  H01L51/001 ,  H01L2924/0002 ,  H01L2924/00

摘要： A coating film (90) is formed by causing vapor deposition particles (91) discharged from a vapor deposition source opening (61) of a vapor deposition source (60) to pass through a space between a plurality of control plates (81) of a control plate unit (80) and a mask opening (71) of a vapor deposition mask in this order and adhere to a substrate, while the substrate (10) is moved relative to the vapor deposition mask (70) in a state in which the substrate (10) and the vapor deposition mask (70) are spaced apart at a fixed interval. A difference in the amount of thermal expansion between the vapor deposition source and the control plate unit is detected and corrected. It is thereby possible to form, at a desired position on a large-sized substrate, the coating film in which edge blur and variations in the edge blur are suppressed.

摘要翻译： 通过使从气相沉积源（60）的气相沉积源开口（61）排出的气相沉积颗粒（91）通过多个控制板（81）之间的空间，形成涂膜（90） 控制板单元（80）和气相沉积掩模的掩模开口（71），并且在基板（10）相对于蒸镀掩模（70）移动的同时粘附到基板上， 衬底（10）和气相沉积掩模（70）以固定的间隔隔开。 检测并校正蒸镀源与控制板单元之间的热膨胀量的差异。 因此，可以在大尺寸基板的期望位置形成抑制边缘模糊和边缘模糊变化的涂膜。

公开(公告)号：US20130292666A1

公开(公告)日：2013-11-07

申请号：US13980873

申请日：2012-01-13

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： H01L27/32

CPC分类号： H01L27/3295 ,  C23C14/042 ,  C23C14/56 ,  H01L27/3211 ,  H01L27/3276 ,  H01L27/3283 ,  H01L51/56 ,  H01L2227/323

摘要： Provided is a TFT substrate (10) on which vapor-deposited sections are to be formed by use of a vapor deposition device (50) which includes a vapor deposition source (85) having injection holes (86); and a vapor deposition mask (81) having opening (82) through which vapor deposition particles are deposited to form the vapor-deposited sections. The TFT substrate (10) includes pixels two-dimensionally arranged in a pixel region (AG); and wires (14) electrically connected to the respective pixels. The vapor-deposited sections (Q) are formed with gaps (X) therebetween, and the wires (14) having respective terminals that are disposed in the gaps (X).

摘要翻译： 提供了通过使用包括具有喷射孔（86）的气相沉积源（85）的蒸镀装置（50）形成蒸镀部的TFT基板（10）。 和具有开口（82）的气相沉积掩模（81），通过蒸镀掩模沉积气相沉积颗粒以形成气相沉积部分。 TFT基板（10）包括像素区域（AG）二维排列的像素。 以及电连接到各个像素的导线（14）。 气相沉积部分（Q）在它们之间形成有间隙（X），并且具有设置在间隙（X）中的各个端子的导线（14）。

公开(公告)号：US20130280839A1

公开(公告)日：2013-10-24

申请号：US13976437

申请日：2011-12-20

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： H01L21/02 ,  H01L33/00

CPC分类号： H01L21/02104 ,  C23C14/042 ,  C23C16/042 ,  H01L27/3211 ,  H01L33/005 ,  H01L51/0011 ,  H01L51/524 ,  H01L51/56 ,  H01L2251/566 ,  H05B33/04 ,  H05B33/10

摘要： On a surface of a substrate (3) on which surface a vapor-deposited film is to be formed, a photoresist (13) is formed so as to have an opening in a sealing region including a display region (R1) which sealing region is formed by a sealing resin (11) of a frame shape. Then, luminescent layers (8R, 8G, and 8B) having a striped pattern are formed. Subsequently, the photoresist (13) is removed with the use of an exfoliative solution so as to form the luminescent layers (8R, 8G, and 8B) patterned with high definition.

摘要翻译： 在其上形成有蒸镀膜的基板（3）的表面上形成光致抗蚀剂（13），以在包括显示区域（R1）的密封区域内具有开口，所述显示区域（R1）的密封区域 由框状的密封树脂（11）形成。 然后，形成具有条纹图案的发光层（8R，8G，8B）。 随后，用去角质溶液去除光致抗蚀剂（13），以形成以高清晰度图案化的发光层（8R，8G和8B）。

公开(公告)号：US20130273746A1

公开(公告)日：2013-10-17

申请号：US13977645

申请日：2011-12-28

申请人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

发明人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02263 ,  C23C14/042 ,  C23C14/12 ,  C23C14/562 ,  H01L21/67017 ,  H01L51/0008 ,  H01L51/56

摘要： A vapor deposition device (50) includes a mask (60) having periodic patterns, and only a region of the mask (60) where a one-period pattern is formed is exposed. A length of the mask base material along a direction perpendicular to a long-side direction of the mask base material is shorter than a length of a film formation substrate (200) along a direction of scanning of the film formation substrate (200). The mask (60) is provided so that the long-side direction of the mask base material is perpendicular to the direction of scanning and that the exposed region is allowed to move in a direction perpendicular to the direction of scanning by rotation of a wind-off roll (91) and a wind-up roll (92).

摘要翻译： 气相沉积装置（50）包括具有周期性图案的掩模（60），并且仅露出形成有一个周期图案的掩模（60）的区域。 掩模基材沿着与掩模基材的长边方向垂直的方向的长度比成膜基板（200）沿着成膜基板（200）的扫描方向的长度短。 掩模（60）设置成使得掩模基材的长边方向垂直于扫描方向，并且允许暴露区域沿着与扫描方向垂直的方向移动， 卷筒（91）和卷绕辊（92）。

公开(公告)号：US20130252353A1

公开(公告)日：2013-09-26

申请号：US13989053

申请日：2011-12-13

申请人： Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

发明人： Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

IPC分类号： H01L21/66

CPC分类号： H01L22/10 ,  C23C14/042 ,  C23C14/12 ,  C23C14/243 ,  H01L51/0011 ,  H01L51/56 ,  H01L2924/0002 ,  H01L2924/00

摘要： A coating film (90) is formed by causing vapor deposition particles (91) discharged from a vapor deposition source opening (61) of a vapor deposition source (60) to pass through a space (82) between a plurality of limiting plates (81) of a limiting plate unit (80) and a mask opening (71) of a vapor deposition mask in this order and adhere to a substrate while the substrate is moved relative to the vapor deposition mask in a state in which the substrate (10) and the vapor deposition mask (70) are spaced apart at a fixed interval. It is determined whether or not it is necessary to correct the position of at least one of the plurality of limiting plates in the X axis direction, and in the case where it is necessary to correct the position, the position of at least one of the plurality of limiting plates in the X axis direction is corrected. Accordingly, a coating film whose edge blur is suppressed can be stably formed at a desired position on a large-sized substrate.

摘要翻译： 通过使从气相沉积源（60）的气相沉积源开口（61）排出的气相沉积颗粒（91）通过多个限制板（81）之间的空间（82）形成涂膜（90） ）和气相沉积掩模的掩模开口（71），并且在衬底（10）的状态下，相对于气相沉积掩模移动衬底而粘附到衬底上， 并且气相沉积掩模（70）以固定的间隔间隔开。 确定是否需要校正多个限位板中的至少一个在X轴方向上的位置，并且在需要校正位置的情况下，至少一个限位板的位置 对X轴方向的多个限位板进行校正。 因此，可以在大尺寸基板的期望位置稳定地形成抑制边缘模糊的涂膜。

公开(公告)号：US20130186335A1

公开(公告)日：2013-07-25

申请号：US13876573

申请日：2011-09-26

申请人： Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

发明人： Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

IPC分类号： H05B33/10

CPC分类号： H05B33/10 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  C23C14/562 ,  H01L51/001

摘要： A vapor deposition apparatus (50) includes: a mask unit (54) including a vapor deposition source (70), a vapor deposition mask (60), and a mask holding member (80); a substrate holder (52); and at least either a mask unit moving mechanism (55) or a substrate moving mechanism (53), with a roller (83) provided in a surface of one of (A) the substrate holder (52) and (B) the mask holding member (80) which faces the other one of (A) the substrate holder (52) and (B) the mask holding member (80).

摘要翻译： 气相沉积装置（50）包括：包括气相沉积源（70），气相沉积掩模（60）和掩模保持构件（80）的掩模单元（54）; 衬底保持器（52）; 以及至少一个掩模单元移动机构（55）或基板移动机构（53），其中设置在（A）基板保持器（52）和（B）中的一个的表面中的辊（83） （A）衬底保持器（52）和（B）掩模保持构件（80）中的另一个的构件（80）。

公开(公告)号：US20130089941A1

公开(公告)日：2013-04-11

申请号：US13703873

申请日：2011-08-17

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

IPC分类号： H01L51/00

CPC分类号： H01L51/0008 ,  C23C14/042 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/0011 ,  H01L51/56

摘要： A vapor deposition source (60), a plurality of control plates (80) and a vapor deposition mask (70) are disposed in this order. A substrate (10) is moved relative to the vapor deposition mask in a state in which the substrate and the vapor deposition mask are spaced apart at a fixed interval. Vapor deposition particles (91) discharged from a vapor deposition source opening (61) of the vapor deposition source pass through neighboring inter-control plate spaces (81) and mask openings (71) formed in the vapor deposition mask, and then adhere to the substrate to form a coating film (90). At least a part of the coating film is formed by the vapor deposition particles that have passed through two or more different inter-control plate spaces. It is thereby possible to form a coating film in which edge blur and variations in the thickness are suppressed.

摘要翻译： 蒸镀源（60），多个控制板（80）和蒸镀掩模（70）依次配置。 在基板和气相沉积掩模以固定间隔间隔开的状态下，基板（10）相对于气相沉积掩模移动。 从气相沉积源的气相沉积源开口（61）排出的气相沉积颗粒（91）通过相邻的控制板间隙（81）和形成在气相沉积掩模中的掩模开口（71），然后粘附到 基板以形成涂膜（90）。 涂膜的至少一部分由已经通过两个或更多个不同的控制间隙的气相沉积颗粒形成。 由此，可以形成抑制边缘模糊和厚度变化的涂膜。

公开(公告)号：US20130017320A1

公开(公告)日：2013-01-17

申请号：US13637627

申请日：2011-02-10

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

IPC分类号： H05B33/10

CPC分类号： H05B33/10 ,  C23C14/042 ,  C23C14/044 ,  C23C14/12 ,  C23C14/225 ,  C23C14/24 ,  H01L27/3211 ,  H01L51/0011 ,  H01L51/56

摘要： A deposition apparatus 50 forms a thin film 3 in a predetermined pattern on a substrate 10 for an organic EL display. A first correction plate 81 and a second correction plate 82 are placed between a shadow mask 60 and a deposition source 53 that emits deposition particles. Each of the correction plates 81, 82 has a plurality of blade plates 83 and a frame 84 that supports the plurality of blade plates 83. The blade plates 83 are placed so as to be tilted with respect to the shadow mask 60, and to extend parallel to each other with an opening 86 between adjoining ones of the blade plates 83 as viewed in a direction perpendicular the deposition mask 60.

摘要翻译： 沉积装置50在用于有机EL显示器的基板10上以预定图案形成薄膜3。 第一校正板81和第二校正板82被放置在荫罩60和发射沉积颗粒的沉积源53之间。 每个校正板81,82具有多个叶片83和支撑多个叶片板83的框架84.叶片板83相对于荫罩60倾斜放置，并且延伸 在与沉积掩模60垂直的方向上观察时，在相邻的刮板83之间具有开口86，彼此平行。

公开(公告)号：US20120183676A1

公开(公告)日：2012-07-19

申请号：US13395879

申请日：2010-09-10

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato

IPC分类号： C23C16/04 ,  B05D5/12 ,  C23C16/52

CPC分类号： H01L51/56 ,  C23C14/042 ,  C23C14/12 ,  H01L51/0011

摘要： The present invention (i) uses a mask unit (80) including: a shadow mask (81) that has an opening (82) and that is smaller in area than a vapor deposition region (210) of a film formation substrate (200) and; a vapor deposition source (85) that has a emission hole (86) for emitting a vapor deposition particle, the emission hole (86) being provided so as to face the shadow mask (81), the shadow mask (81) and the vapor deposition source (85) being fixed in position relative to each other, (ii) adjusts an amount of a void between the shadow mask (81) and the film formation substrate (200), (iii) moves at least a first one of the mask unit (80) and the film formation substrate (200) relative to a second one thereof while uniformly maintaining the amount of the void between the mask unit (80) and the film formation substrate (200), and (iv) sequentially deposit the vapor deposition particle onto the vapor deposition region (210) through the opening (82) of the shadow mask (81). This makes it possible to form a high-resolution vapor deposition pattern on a large-sized substrate.

摘要翻译： 本发明（i）使用掩模单元（80），其包括：具有开口（82）并且面积小于成膜基板（200）的气相沉积区域（210）的荫罩（81） 和; 具有用于发射气相沉积粒子的发射孔（86）的蒸气源（85），所述发射孔（86）设置成面对荫罩（81），荫罩（81）和蒸气 沉积源（85）相对于彼此固定在适当位置，（ii）调节荫罩（81）和成膜基底（200）之间的空隙量，（iii）移动至少第一个 掩模单元（80）和成膜基板（200），同时均匀地保持掩模单元（80）和成膜基板（200）之间的空隙量，并且（iv）顺序地将 气相沉积颗粒通过荫罩（81）的开口（82）到蒸镀区域（210）上。 这使得可以在大尺寸基板上形成高分辨率气相沉积图案。

公开(公告)号：US20060007976A1

公开(公告)日：2006-01-12

申请号：US11134519

申请日：2005-05-23

申请人： Masanori Watanabe ,  Shinichi Kawato ,  Mitsuhiro Matsumoto

发明人： Masanori Watanabe ,  Shinichi Kawato ,  Mitsuhiro Matsumoto

IPC分类号： H01S5/00

CPC分类号： H01S5/2231 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/1014 ,  H01S5/1039 ,  H01S5/162 ,  H01S5/168 ,  H01S5/2022 ,  H01S5/2214 ,  H01S5/2219 ,  H01S5/3211 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/18

摘要： In a semiconductor laser device of the invention, a ridge portion 150 forms a waveguide, and guided light goes along the ridge portion 150. A tail of the guided layer is present also at first side portions 151, while second side portions 152 are regions which the tail of the guided light does not reach. Meanwhile, scattered light generated from the ridge portion 150 goes through the first side portions 15, spreading into the second side portions 152. In the second side portions 152, a light absorption layer 127 serving as a light absorber is formed on the first upper clad layer 108, where the scattered light is absorbed. As a result of the absorption of scattered light in the second side portions 152, ripples of radiation light are reduced. Also since the light absorption layer 127 is in electrical contact with a p-side ohmic electrode 125, the problem of charge accumulation to the light absorption layer 127 can be avoided.

摘要翻译： 在本发明的半导体激光装置中，脊部150形成波导，导向光沿着脊部150。 引导层的尾部还存在于第一侧部151处，而第二侧部152是导光的尾部未到达的区域。 同时，从脊部150产生的散射光穿过第一侧部15，扩展到第二侧部152。 在第二侧部152中，在吸收散射光的第一上覆盖层108上形成有作为光吸收体的光吸收层127。 作为第二侧部152中散射光的吸收的结果，辐射光的波纹减小。 此外，由于光吸收层127与p侧欧姆电极125电接触，因此可以避免对光吸收层127的电荷积聚的问题。