Method and Apparatus for Monitoring Endcap Pullback
    21.
    发明申请
    Method and Apparatus for Monitoring Endcap Pullback 失效
    监测端盖回退的方法和装置

    公开(公告)号:US20080283878A1

    公开(公告)日:2008-11-20

    申请号:US11750473

    申请日:2007-05-18

    摘要: Various apparatus and methods of monitoring endcap pullback are disclosed. In one aspect, an apparatus is provided that includes a substrate that has a plurality of semiconductor regions. Each of the plurality of semiconductor regions has a border with an insulating structure. A transistor is positioned in each of the plurality of semiconductor regions. Each of the transistors includes a gate that has a first lateral dimension and an end that has a position relative to its border. A voltage source is electrically coupled to the transistors whereby levels of currents flowing through the transistors are indicative of the positions of the ends of the gates relative to their borders.

    摘要翻译: 公开了监测端帽回退的各种装置和方法。 一方面,提供了一种包括具有多个半导体区域的基板的装置。 多个半导体区域中的每一个具有与绝缘结构的边界。 晶体管位于多个半导体区域的每一个中。 每个晶体管包括具有第一横向尺寸的门和具有相对于其边界的位置的端部。 电压源电耦合到晶体管,因此流过晶体管的电流水平指示栅极的端部相对于其边界的位置。

    Post fabrication CD modification on imprint lithography mask
    22.
    发明授权
    Post fabrication CD modification on imprint lithography mask 失效
    压印光刻掩模后制造CD修改

    公开(公告)号:US07386162B1

    公开(公告)日:2008-06-10

    申请号:US10874498

    申请日:2004-06-23

    IPC分类号: G06K9/00

    摘要: The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate compensating for imprint mask critical dimension error(s). An aspect of the invention generates feedback information that facilitates control of imprint mask critical dimension via employing a scatterometry system to detect imprint mask critical dimension error, and mitigating the error via a spacer etchback procedure.

    摘要翻译: 本发明一般涉及光刻系统和方法,更具体地涉及有助于补偿压印掩模临界尺寸误差的系统和方法。 本发明的一个方面产生反馈信息,其通过使用散射测量系统来检测压印掩模临界尺寸误差并通过间隔回蚀程序来减轻误差,从而有助于控制压印掩模临界尺寸。

    Topography compensation of imprint lithography patterning
    23.
    发明授权
    Topography compensation of imprint lithography patterning 失效
    压印光刻图案的地形补偿

    公开(公告)号:US07376259B1

    公开(公告)日:2008-05-20

    申请号:US10874499

    申请日:2004-06-23

    IPC分类号: G06K9/00

    摘要: The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that modify an imprint mask. An aspect of the invention generates feedback information that facilitates control of imprint mask feature height via employing a scatterometry system to detect topography variation and, decreasing imprint mask feature height in order to compensate for topography variation.

    摘要翻译: 本发明一般涉及光刻系统和方法,更具体地涉及修改压印掩模的系统和方法。 本发明的一个方面产生反馈信息,其通过使用散射测量系统来检测地形变化和减小压印掩模特征高度以便补偿地形变化,从而有助于控制印迹掩模特征高度。

    Etch stop layer for etching FinFET gate over a large topography
    25.
    发明授权
    Etch stop layer for etching FinFET gate over a large topography 有权
    蚀刻停止层,用于在大地形上蚀刻FinFET栅极

    公开(公告)号:US06787476B1

    公开(公告)日:2004-09-07

    申请号:US10632989

    申请日:2003-08-04

    IPC分类号: H01L21302

    摘要: A method of forming a gate for a Fin Field Effect Transistor (FinFET) is provided. The method includes forming a first layer of material over a fin and forming a second layer over the first layer. The second layer includes either Ti or TiN. The method further includes forming a third layer over the second layer. The third layer includes an anti-reflective coating. The method also includes etching the first, second and third layers to form the gate for the FinFET.

    摘要翻译: 提供了一种形成Fin场效应晶体管(FinFET)的栅极的方法。 该方法包括在翅片上形成第一层材料,并在第一层上形成第二层。 第二层包括Ti或TiN。 该方法还包括在第二层上形成第三层。 第三层包括抗反射涂层。 该方法还包括蚀刻第一,第二和第三层以形成用于FinFET的栅极。

    Method of making metal gate stack with etch endpoint tracer layer
    27.
    发明授权
    Method of making metal gate stack with etch endpoint tracer layer 有权
    用蚀刻终点示踪层制作金属栅极叠层的方法

    公开(公告)号:US06589858B1

    公开(公告)日:2003-07-08

    申请号:US10163534

    申请日:2002-06-07

    IPC分类号: H01L213205

    CPC分类号: H01L21/32136 Y10S438/97

    摘要: A metal gate structure and method of making the same provides a tracer layer over a first metal or metal compound layer. When etching a metal gate, formed of tungsten, for example, with a first etchant chemistry optimized for etching tungsten, detection of the tracer layer through optical emission spectroscopy, for example, indicates the imminent clearing of the tungsten. A second etchant chemistry is then employed that is selective to the first metal or metal compound layer, such as TiN, overlying the gate dielectric. This provides a controlled etching of the TiN and thereby prevents degradation of the underlying gate dielectric material.

    摘要翻译: 金属栅结构及其制造方法在第一金属或金属化合物层上提供示踪层。 当例如用钨蚀刻金属栅极时,例如,用蚀刻钨优化的第一蚀刻剂化学品,例如通过光学发射光谱法检测示踪剂层,表明钨的即将清除。 然后使用对覆盖栅极电介质的第一金属或金属化合物层(例如TiN)具有选择性的第二蚀刻剂化学。 这提供了对TiN的受控蚀刻,从而防止下面的栅介质材料的劣化。

    Method for enhancing shallow trench top corner rounding using endpoint control of nitride layer etch process with appropriate etch front
    28.
    发明授权
    Method for enhancing shallow trench top corner rounding using endpoint control of nitride layer etch process with appropriate etch front 失效
    使用适当蚀刻前沿的氮化物层蚀刻工艺的端点控制来增强浅沟槽顶角圆角的方法

    公开(公告)号:US06579801B1

    公开(公告)日:2003-06-17

    申请号:US09997986

    申请日:2001-11-30

    IPC分类号: H01L21311

    摘要: Various methods of fabricating substrate trenches and isolation structures therein are disclosed. In one aspect, a method of fabricating a trench in a substrate is provided. An oxide/nitride stack is formed on the substrate. An opening with opposing sidewalls is plasma etched in the silicon nitride film until a first portion of the oxide film is exposed while second and third portions of the oxide film positioned on opposite sides of the first portion remain covered by first and second portions of the silicon nitride film that project inwardly from the opposing sidewalls. The oxide film is etched for a selected time period in order to expose a portion of the substrate and to define first and second oxide/nitride ledges that project inwardly from the opposing sidewalls. The substrate is etched to form the trench with the first and second oxide/nitride ledges protecting underlying portions of the substrate.

    摘要翻译: 公开了在其中制造衬底沟槽和隔离结构的各种方法。 一方面,提供了在衬底中制造沟槽的方法。 在基板上形成氧化物/氮化物堆叠。 具有相对的侧壁的开口在氮化硅膜中被等离子体蚀刻,直到氧化膜的第一部分暴露,而位于第一部分的相对侧上的氧化膜的第二和第三部分保持被硅的第一和第二部分覆盖 氮化物膜从相对的侧壁向内突出。 在选择的时间段内蚀刻氧化膜以暴露衬底的一部分并且限定从相对的侧壁向内突出的第一和第二氧化物/氮化物凸缘。 蚀刻衬底以与保护衬底下部的第一和第二氧化物/氮化物凸缘形成沟槽。

    Metal gate stack with etch stop layer

    公开(公告)号:US06511911B1

    公开(公告)日:2003-01-28

    申请号:US09824218

    申请日:2001-04-03

    IPC分类号: H01L2144

    CPC分类号: H01L21/28088 H01L29/4966

    摘要: A metal gate structure and method of forming the same employs an etch stop layer between a first metal layer, made of TiN, for example, and the metal gate formed of tungsten. The etch stop layer prevents overetching of the TiN during the etching of the tungsten in the formation of the metal gate. The prevention of the overetching of the TiN protects the gate oxide from undesirable degradation. The provision of aluminum or tantalum in the etch stop layer allows a thin etch stop layer to be used that provides adequate etch stopping capability and does not undesirably affect the work function of the TiN.