公开(公告)号：US20140231859A1

公开(公告)日：2014-08-21

申请号：US14236582

申请日：2011-08-01

Applicant: Jae Yoon Kim ,  Seok Min Hwang ,  Su Yeol Lee ,  Seung Wan Chae ,  Jae Ho Han ,  Jin Bock Lee

Inventor： Jae Yoon Kim ,  Seok Min Hwang ,  Su Yeol Lee ,  Seung Wan Chae ,  Jae Ho Han ,  Jin Bock Lee

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/32

CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: A semiconductor light emitting device may include: a light emitting structure including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed therebetween; a first electrode connected to one of the n-type semiconductor layer and the p-type semiconductor layer; and a second electrode connected to the other of the n-type semiconductor layer and the p-type semiconductor layer. The first electrode may include a first electrode pad disposed in a central portion of one side of the light emitting structure and first to third branch electrodes connected to the first electrode pad, having a fork shape. The second electrode may include second and third electrode pads disposed separately in both corners of the other side opposing the one side and fourth to seventh branch electrodes connected thereto. The fourth and seventh branch electrodes may extend in an interdigitated manner between the first to third branch electrodes.

Abstract translation: 半导体发光器件可以包括：包含n型半导体层，p型半导体层和插入其间的有源层的发光结构; 连接到所述n型半导体层和所述p型半导体层之一的第一电极; 以及与n型半导体层和p型半导体层中的另一方连接的第二电极。 第一电极可以包括设置在发光结构的一侧的中心部分中的第一电极焊盘和连接到具有叉形状的第一电极焊盘的第一至第三分支电极。 第二电极可以包括分别位于与一侧相对的另一侧的两个角部和与其连接的第四至第七分支电极的第二和第三电极焊盘。 第四和第七分支电极可以在第一至第三分支电极之间以叉指方式延伸。

公开(公告)号：US20120286309A1

公开(公告)日：2012-11-15

申请号：US13279782

申请日：2011-10-24

Applicant: Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

Inventor： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

IPC: H01L33/46

CPC classification number: H01L33/46 ,  H01L33/20

Abstract: A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

Abstract translation: 一种半导体发光器件包括：发光二极管单元，其包括具有在其下边缘向上倾斜的面的透光基板。 背光层叠体形成在透光性基板的下表面和周边的倾斜面上。 后反光层叠体包括光辅助层和形成在光辅助层的下表面上的金属反射膜。 在后反光层叠体的下表面设置有结层叠体。 结合层叠体包括由共晶金属材料制成的结金属层和扩散阻挡膜。

公开(公告)号：US08168454B2

公开(公告)日：2012-05-01

申请号：US12466086

申请日：2009-05-14

Applicant: Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

Inventor： Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC: H01L21/00

CPC classification number: H01L33/32 ,  H01L33/14 ,  H01L33/40

Abstract: Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

Abstract translation: 提供包括n电极的垂直LED; 形成在n电极下面的n型GaN层，n型GaN层具有与n电极接触的表面，该表面具有比N大的Ga的Ga + N层; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。

公开(公告)号：US20110053298A1

公开(公告)日：2011-03-03

申请号：US12909297

申请日：2010-10-21

Applicant: Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

Inventor： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

IPC: H01L33/22 ,  H01L33/48

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/20

Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

公开(公告)号：US20100193823A1

公开(公告)日：2010-08-05

申请号：US12756528

申请日：2010-04-08

Applicant: Tae Jun KIM ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

Inventor： Tae Jun KIM ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

IPC: H01L33/44

CPC classification number: H01L33/0079 ,  H01L33/22 ,  H01L33/32

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Abstract translation: 提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构 在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

公开(公告)号：US20090311817A1

公开(公告)日：2009-12-17

申请号：US12544868

申请日：2009-08-20

Applicant: Sang Ho YOON ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

Inventor： Sang Ho YOON ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC: H01L33/00

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/20

Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

Abstract translation: 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。

公开(公告)号：US07573076B2

公开(公告)日：2009-08-11

申请号：US11634112

申请日：2006-12-06

Applicant: Doo Go Baik ,  Bang Won Oh ,  Seok Beom Choi ,  Su Yeol Lee

Inventor： Doo Go Baik ,  Bang Won Oh ,  Seok Beom Choi ,  Su Yeol Lee

IPC: H01L33/00

CPC classification number: H01L33/14 ,  H01L33/02 ,  H01L33/32

Abstract: A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.

Abstract translation: 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。 垂直GaN基LED包括：支承层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。

公开(公告)号：US20090026478A1

公开(公告)日：2009-01-29

申请号：US12177517

申请日：2008-07-22

Applicant: Sang Ho YOON ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

Inventor： Sang Ho YOON ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC: H01L33/00

CPC classification number: H01L33/46 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/405

Abstract: There is provided a semiconductor light emitting device having excellent light extraction efficiency to efficiently reflect light moving into the device by increasing the total reflectivity of a reflective layer. A semiconductor light emitting device according to an aspect of the invention includes: a substrate, a reflective electrode, a first conductivity semiconductor layer, an active layer, and a second conductivity type semiconductor layer that are sequentially stacked. Here, the reflective electrode includes; a first reflective layer provided on the substrate and including a conductive reflective material reflecting light generated from the active layer; and a second reflective layer provided on the first reflective layer, including one or more dielectric portions reflecting light generated from the active layer, and one or more contact holes filled with a conductive filler to electrically connect the first conductivity type semiconductor layer and the first reflective layer, and having a greater thickness than a wavelength of the generated light.

Abstract translation: 提供了具有优异的光提取效率的半导体发光器件，以通过增加反射层的总反射率来有效地反射移入器件的光。 根据本发明的一个方面的半导体发光器件包括：依次堆叠的衬底，反射电极，第一导电半导体层，有源层和第二导电类型半导体层。 这里，反射电极包括： 第一反射层，设置在所述基板上，并且包括反射从所述有源层产生的光的导电反射材料; 以及设置在所述第一反射层上的第二反射层，包括反射从所述有源层产生的光的一个或多个介电部分和填充有导电填料的一个或多个接触孔，以将所述第一导电类型半导体层和所述第一反射层 并且具有比所产生的光的波长更大的厚度。

公开(公告)号：US07442569B2

公开(公告)日：2008-10-28

申请号：US11878503

申请日：2007-07-25

Applicant: Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

Inventor： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

IPC: H01L21/00 ,  H01L29/22

CPC classification number: H01L33/14 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/32

Abstract: Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.

Abstract translation: 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED包括n电极。 在n电极下形成AlGaN层。 在AlGaN层下形成未掺杂的GaN层，以向AlGaN层的结界面提供二维电子气层。 GaN基LED结构包括依次形成在未掺杂的GaN层下面的n型GaN层，有源层和p型GaN层。 在GaN基LED结构下方形成p电极。 导电性基板形成在p电极的下方。

公开(公告)号：US07259399B2

公开(公告)日：2007-08-21

申请号：US11490231

申请日：2006-07-21

Applicant: Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

Inventor： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

IPC: H01L29/22 ,  H01L29/24

CPC classification number: H01L33/14 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/32

Abstract: Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.