公开(公告)号：US08487334B2

公开(公告)日：2013-07-16

申请号：US13279782

申请日：2011-10-24

申请人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

发明人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/46 ,  H01L33/20

摘要： A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

摘要翻译： 一种半导体发光器件包括：发光二极管单元，其包括具有在其下边缘向上倾斜的面的透光基板。 背光层叠体形成在透光性基板的下表面和周边的倾斜面上。 后反光层叠体包括光辅助层和形成在光辅助层的下表面上的金属反射膜。 在后反光层叠体的下表面设置有结层叠体。 结合层叠体包括由共晶金属材料制成的结金属层和扩散阻挡膜。

公开(公告)号：US20120286309A1

公开(公告)日：2012-11-15

申请号：US13279782

申请日：2011-10-24

申请人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

发明人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

IPC分类号： H01L33/46

CPC分类号： H01L33/46 ,  H01L33/20

摘要： A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

摘要翻译： 一种半导体发光器件包括：发光二极管单元，其包括具有在其下边缘向上倾斜的面的透光基板。 背光层叠体形成在透光性基板的下表面和周边的倾斜面上。 后反光层叠体包括光辅助层和形成在光辅助层的下表面上的金属反射膜。 在后反光层叠体的下表面设置有结层叠体。 结合层叠体包括由共晶金属材料制成的结金属层和扩散阻挡膜。

公开(公告)号：US20130002139A1

公开(公告)日：2013-01-03

申请号：US13536338

申请日：2012-06-28

申请人： Tae Hun KIM ,  Seung Wan Chae ,  Sung Tae Kim ,  Su Yeol Lee

发明人： Tae Hun KIM ,  Seung Wan Chae ,  Sung Tae Kim ,  Su Yeol Lee

IPC分类号： H05B37/02

CPC分类号： H01L25/167 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/00014

摘要： There is provided a semiconductor light emitting device package including: a semiconductor substrate having a first principal surface and a second principal surface opposed thereto; a light source disposed on a first principal surface side of the semiconductor substrate; a plurality of electrode pads disposed on a second principal side of the semiconductor substrate; a conductive via extended from the plurality of electrode pads and penetrating the semiconductor substrate; and a driving circuit unit including a plurality of diodes obtained through a pn junction formed by a p-type region and an n-type region, and electrically connected to the conductive via and the light source.

摘要翻译： 提供了一种半导体发光器件封装，包括：具有与其相对的第一主表面和第二主表面的半导体衬底; 设置在所述半导体基板的第一主面侧的光源; 设置在所述半导体基板的第二主面上的多个电极焊盘; 从所述多个电极焊盘延伸并穿透所述半导体衬底的导电通孔; 以及驱动电路单元，其包括通过由p型区域和n型区域形成的pn结获得的多个二极管，并且电连接到导电通孔和光源。

公开(公告)号：US20130240937A1

公开(公告)日：2013-09-19

申请号：US13820459

申请日：2011-09-01

申请人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Jin Bock Lee ,  Jin Hwan Kim ,  Seung Jae Lee ,  Bo Kyoung Kim ,  Jong Ho Lee

发明人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Jin Bock Lee ,  Jin Hwan Kim ,  Seung Jae Lee ,  Bo Kyoung Kim ,  Jong Ho Lee

IPC分类号： H01L33/46

CPC分类号： H01L33/46 ,  H01L24/32 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is provided a semiconductor light emitting diode (LED) chip including: a semiconductor light emitting diode unit including a light-transmissive substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on an upper surface of the light-transmissive substrate; a rear reflective laminate including an auxiliary optical layer formed on a lower surface of the light-transmissive substrate and made of a material having a predetermined refractive index and a metal reflective film formed on a lower surface of the auxiliary optical layer; and a bonding laminate provided on a lower surface of the rear reflective laminate and including a bonding metal layer made of a eutectic metal material and an anti-diffusion film formed to prevent diffusion of elements between the bonding metal layer and the metal reflective film.

摘要翻译： 提供了一种半导体发光二极管（LED）芯片，其包括：半导体发光二极管单元，包括透光基板，以及顺序形成的第一导电型半导体层，有源层和第二导电类型半导体层 在所述透光性基板的上表面上; 后反光层叠体，其包括形成在所述透光性基板的下表面上并由具有预定折射率的材料制成的辅助光学层和形成在所述辅助光学层的下表面上的金属反射膜; 以及设置在后反射层叠体的下表面上并包括由共晶金属材料制成的接合金属层和形成为防止元件在接合金属层和金属反射膜之间扩散的防扩散膜的接合层压体。

公开(公告)号：US08829548B2

公开(公告)日：2014-09-09

申请号：US13554026

申请日：2012-07-20

申请人： Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

发明人： Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

IPC分类号： H01L33/00

CPC分类号： H01L25/167 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.

摘要翻译： 发光器件封装包括：具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极，使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。

公开(公告)号：US20130020598A1

公开(公告)日：2013-01-24

申请号：US13554026

申请日：2012-07-20

申请人： Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

发明人： Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

IPC分类号： H01L33/50 ,  H01L33/62

CPC分类号： H01L25/167 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.

摘要翻译： 发光器件封装包括：具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极，使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。

公开(公告)号：US20140231859A1

公开(公告)日：2014-08-21

申请号：US14236582

申请日：2011-08-01

申请人： Jae Yoon Kim ,  Seok Min Hwang ,  Su Yeol Lee ,  Seung Wan Chae ,  Jae Ho Han ,  Jin Bock Lee

发明人： Jae Yoon Kim ,  Seok Min Hwang ,  Su Yeol Lee ,  Seung Wan Chae ,  Jae Ho Han ,  Jin Bock Lee

IPC分类号： H01L33/38 ,  H01L33/62 ,  H01L33/32

CPC分类号： H01L33/387 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： A semiconductor light emitting device may include: a light emitting structure including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed therebetween; a first electrode connected to one of the n-type semiconductor layer and the p-type semiconductor layer; and a second electrode connected to the other of the n-type semiconductor layer and the p-type semiconductor layer. The first electrode may include a first electrode pad disposed in a central portion of one side of the light emitting structure and first to third branch electrodes connected to the first electrode pad, having a fork shape. The second electrode may include second and third electrode pads disposed separately in both corners of the other side opposing the one side and fourth to seventh branch electrodes connected thereto. The fourth and seventh branch electrodes may extend in an interdigitated manner between the first to third branch electrodes.

摘要翻译： 半导体发光器件可以包括：包含n型半导体层，p型半导体层和插入其间的有源层的发光结构; 连接到所述n型半导体层和所述p型半导体层之一的第一电极; 以及与n型半导体层和p型半导体层中的另一方连接的第二电极。 第一电极可以包括设置在发光结构的一侧的中心部分中的第一电极焊盘和连接到具有叉形状的第一电极焊盘的第一至第三分支电极。 第二电极可以包括分别位于与一侧相对的另一侧的两个角部和与其连接的第四至第七分支电极的第二和第三电极焊盘。 第四和第七分支电极可以在第一至第三分支电极之间以叉指方式延伸。

公开(公告)号：US08664020B2

公开(公告)日：2014-03-04

申请号：US12620928

申请日：2009-11-18

申请人： Tae Sung Jang ,  Su Yeol Lee ,  Jong Gun Woo

发明人： Tae Sung Jang ,  Su Yeol Lee ,  Jong Gun Woo

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L33/22

摘要： Disclosed is a semiconductor light emitting device, and a method of manufacturing the same. The semiconductor light emitting device includes a first conductivity type semiconductor layer, an active layer disposed on the top of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the top of the active layer and comprising light extraction patterns in the top thereof, the light extraction patterns each having a columnar portion and a hemispherical top portion.

摘要翻译： 公开了一种半导体发光器件及其制造方法。 半导体发光器件包括第一导电类型半导体层，设置在第一导电类型半导体层的顶部上的有源层和设置在有源层的顶部上的第二导电类型半导体层，并且包括在第 其顶部具有各自具有柱状部分和半球形顶部部分的光提取图案。

公开(公告)号：US08124997B2

公开(公告)日：2012-02-28

申请号：US12756528

申请日：2010-04-08

申请人： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

发明人： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

IPC分类号： H01L31/0232

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32

摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

摘要翻译： 提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构 在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

公开(公告)号：US20100133570A1

公开(公告)日：2010-06-03

申请号：US12620928

申请日：2009-11-18

申请人： Tae Sung JANG ,  Su Yeol Lee ,  Jong Gun Woo

发明人： Tae Sung JANG ,  Su Yeol Lee ,  Jong Gun Woo

IPC分类号： H01L33/00 ,  H01L21/30

CPC分类号： H01L33/20 ,  H01L33/22

摘要： Disclosed is a semiconductor light emitting device, and a method of manufacturing the same. The semiconductor light emitting device includes a first conductivity type semiconductor layer, an active layer disposed on the top of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the top of the active layer and comprising light extraction patterns in the top thereof, the light extraction patterns each having a columnar portion and a hemispherical top portion.

摘要翻译： 公开了一种半导体发光器件及其制造方法。 半导体发光器件包括第一导电类型半导体层，设置在第一导电类型半导体层的顶部上的有源层和设置在有源层的顶部上的第二导电类型半导体层，并且包括在第 其顶部具有各自具有柱状部分和半球形顶部部分的光提取图案。