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    Semiconductor light-emitting device and fabrication method thereof
    21.
    发明申请
    Semiconductor light-emitting device and fabrication method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20070221929A1

    公开(公告)日：2007-09-27

    申请号：US11727378

    申请日：2007-03-26

    申请人： Ya-Ju Lee ,  Ta-Cheng Hsu ,  Ming-Ta Chin ,  Yen-Wen Chen ,  Lo Wu-Tsung ,  Li Chung-Yuan ,  Min-Hsun Hsieh

    发明人： Ya-Ju Lee ,  Ta-Cheng Hsu ,  Ming-Ta Chin ,  Yen-Wen Chen ,  Lo Wu-Tsung ,  Li Chung-Yuan ,  Min-Hsun Hsieh

    IPC分类号： H01L33/00

    CPC分类号： H01L33/16 ,  H01L33/22

    摘要： A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0ī1] or [01ī] from [100], or toward [011] or [0 ii] from [ī00] so that the upper surface of the semiconductor substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.

    摘要翻译： 公开了一种半导体发光器件。 半导体发光器件包括设置在半导体衬底上的多层外延结构。 半导体衬底具有垂直于其上表面的预定晶格方向，其中预定的晶格方向朝向[100]或[011]或[0 ii]，使得半导体衬底的上表面包括具有不同晶格面方向的至少两个晶格面。 多层外延结构具有垂直于预定晶格方向的粗糙化的上表面。 本发明还公开了一种制造半导体发光器件的方法。

    Light-emitting device
    23.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US09231151B2

    公开(公告)日：2016-01-05

    申请号：US13618544

    申请日：2012-09-14

    申请人： Ta-Cheng Hsu ,  Ya-Lan Yang ,  Ying-Yong Su ,  Ching-Shian Yeh ,  Chao-Shun Huang ,  Ya-Ju Lee

    发明人： Ta-Cheng Hsu ,  Ya-Lan Yang ,  Ying-Yong Su ,  Ching-Shian Yeh ,  Chao-Shun Huang ,  Ya-Ju Lee

    IPC分类号： H01J1/62 ,  H01L33/00 ,  H01L33/22

    CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/32

    摘要： A light-emitting device comprises a textured substrate comprising a boundary and a plurality of textured structures within the boundary, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape and a bottom portion parallel to the top portion, the bottom portion having a second top-view shape, wherein the first top-view shape comprises a circle or ellipse and the second top-view shape comprises a polygon, wherein the first top-view shape and the second top-view shape overlap each other, and the textured structures are spaced apart from each other from a top view of the light-emitting device.

    摘要翻译： 发光器件包括纹理化衬底，其包括边界内的边界和多个纹理结构，其中纹理结构和纹理化衬底都由蓝宝石构成; 以及覆盖所述纹理化衬底的发光堆叠，包括第一导电类型半导体层，有源层和第二导电类型半导体层，其中所述多个纹理结构中的每一个包括具有第一顶视形状的顶部 和与顶部平行的底部，底部具有第二顶视图形状，其中第一顶视图形状包括圆形或椭圆形，第二顶视图形状包括多边形，其中第一顶视图 形状和第二顶视图形状彼此重叠，并且纹理结构从发光装置的顶视图彼此间隔开。

    Light-emitting device having a roughened surface with different topographies
    24.
    发明授权
    Light-emitting device having a roughened surface with different topographies 有权
    具有不同形貌的粗糙表面的发光器件

    公开(公告)号：US08679874B2

    公开(公告)日：2014-03-25

    申请号：US13596811

    申请日：2012-08-28

    申请人： Chiu-Lin Yao ,  Ta-Cheng Hsu

    发明人： Chiu-Lin Yao ,  Ta-Cheng Hsu

    IPC分类号： H01L33/22

    CPC分类号： H01L33/22 ,  H01L33/387 ,  H01L2933/0016

    摘要： This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.

    摘要翻译： 本发明提供一种具有粗糙表面的光电半导体器件及其制造方法。 光电子半导体器件包括具有粗糙表面的半导体叠层和覆盖半导体叠层的电极层。 粗糙表面包括具有第一形貌的第一区域和具有第二形貌的第二区域。 该方法包括以下步骤：在衬底上形成半导体堆叠，在半导体堆叠上形成电极层，热处理半导体堆叠，以及湿蚀刻半导体叠层的表面以形成粗糙表面。

    Opto-electronic device
    25.
    发明授权
    Opto-electronic device 有权
    光电器件

    公开(公告)号：US08120011B2

    公开(公告)日：2012-02-21

    申请号：US12570255

    申请日：2009-09-30

    申请人： Ta-Cheng Hsu

    发明人： Ta-Cheng Hsu

    IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

    CPC分类号： H01L33/08 ,  H01L33/18 ,  H01L33/20 ,  Y10S977/949

    摘要： The present application relates to an opto-electronic device. The opto-electronic device includes a first light-emitting structure and a second light-emitting structure. The first light-emitting structure is capable of generating a first light having a first wavelength. The second light-emitting structure is capable of generating a second light having a second wavelength. The first light-emitting structure includes a nanorod structure having a first active layer, and the first active layer can absorb the second light to generate the first light.

    摘要翻译： 本申请涉及一种光电器件。 光电器件包括第一发光结构和第二发光结构。 第一发光结构能够产生具有第一波长的第一光。 第二发光结构能够产生具有第二波长的第二光。 第一发光结构包括具有第一有源层的纳米棒结构，并且第一有源层可以吸收第二光以产生第一光。

    LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    27.
    发明申请
    LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号：US20110253979A1

    公开(公告)日：2011-10-20

    申请号：US13170360

    申请日：2011-06-28

    申请人： Chiu-Lin Yao ,  Ta-Cheng Hsu

    发明人： Chiu-Lin Yao ,  Ta-Cheng Hsu

    IPC分类号： H01L33/06 ,  H01L33/58

    CPC分类号： H01L33/06 ,  H01L2933/0083

    摘要： A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.

    摘要翻译： 公开了一种发光器件及其制造方法。 发光装置是包括生长衬底，n型半导体层，量子阱有源层和p型半导体层的半导体器件。 它结合了全息和量子阱相互扩散（QWI）以形成具有二维周期性变化的介电常数或量子阱活性层中的二维周期性变化的材料组成的光子晶体发光器件。 光子晶体发光器件可以提高内部效率和光提取效率。

    LIGHT-EMITTING DIODE STRUCTURE
    28.
    发明申请
    LIGHT-EMITTING DIODE STRUCTURE 审中-公开
    发光二极管结构

    公开(公告)号：US20110175126A1

    公开(公告)日：2011-07-21

    申请号：US13008702

    申请日：2011-01-18

    申请人： Hung-Chih YANG ,  Ming-Chi Hsu ,  Ta-Cheng Hsu ,  Chih-Chung Yang ,  Tsung-Yi Tang ,  Yung-Sheng Chen ,  Wen-Yu Shiao ,  Che-Hao Liao ,  Yu-Jiun Shen ,  Sheng-Horng Yen

    发明人： Hung-Chih YANG ,  Ming-Chi Hsu ,  Ta-Cheng Hsu ,  Chih-Chung Yang ,  Tsung-Yi Tang ,  Yung-Sheng Chen ,  Wen-Yu Shiao ,  Che-Hao Liao ,  Yu-Jiun Shen ,  Sheng-Horng Yen

    IPC分类号： H01L31/0352 ,  B82Y99/00

    CPC分类号： H01L33/12 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/007 ,  H01L33/16 ,  H01L33/20

    摘要： A light emitting diode device is provided, which comprises a substrate comprising a first growth surface and a bottom surface opposite to the first growth surface; a dielectric layer with a plurality of openings therein formed on the first growth surface; a plurality of semiconductor nano-scaled structures formed on the substrate protruding through the openings; a layer formed on the plurality of semiconductor nano-scaled structures with a second growth surface substantially parallel with the bottom surface; a light emitting diode structure formed on the second growth surface; wherein the diameters of the openings are smaller than 250 nm, and wherein the diameters of the plurality semiconductor nano-scaled structures are larger than the diameters of the corresponding openings.

    摘要翻译： 提供了一种发光二极管器件，其包括：衬底，其包括与第一生长表面相对的第一生长表面和底表面; 在第一生长表面上形成有多个开口的电介质层; 形成在所述基板上的多个半导体纳米尺度结构，所述多个半导体纳米级结构通过所述开口突出; 形成在所述多个半导体纳米级结构上的层，其具有基本上平行于所述底表面的第二生长表面; 形成在所述第二生长表面上的发光二极管结构; 其中所述开口的直径小于250nm，并且其中所述多个半导体纳米尺度结构的直径大于相应开口的直径。