公开(公告)号：US20150162429A1

公开(公告)日：2015-06-11

申请号：US14374428

申请日：2012-01-26

申请人： Takayuki Hashimoto ,  Masahiro Masunaga

发明人： Takayuki Hashimoto ,  Masahiro Masunaga

IPC分类号： H01L29/78 ,  H01L27/06 ,  H02M7/537 ,  H01L29/861

CPC分类号： H01L29/78 ,  H01L27/06 ,  H01L29/0834 ,  H01L29/7397 ,  H01L29/861 ,  H01L29/8611 ,  H02M7/003 ,  H02M7/537 ,  H02M2001/0051 ,  H02M2001/0054

摘要： A semiconductor device (10) includes an n-type drift layer (11) that is a semiconductor substrate; a p-type region (12) and an n-type region (13) that are formed on a surface of the semiconductor substrate and serving as anode regions; a high-concentration n-type region (15) formed on a back surface of the semiconductor substrate and serving as a cathode region; and an anode electrode (1). The semiconductor substrate includes, on its surface, a structure in which the p-type region (12) and the n-type region (13) are adjacent to each other, wherein the p-type region (12) is connected to the anode electrode (1), and the n-type region (13) is connected to the anode electrode (1) via a switch (14). A control unit (40) is connected to a control terminal of the switch (14). In a conduction state of the semiconductor device (10), the control unit (40) outputs a high-frequency pulse to the control terminal of the switch (14) to turn on and off the switch (14).

摘要翻译： 半导体器件（10）包括作为半导体衬底的n型漂移层（11）; 形成在半导体衬底的表面上并用作阳极区的p型区域（12）和n型区域（13）; 形成在半导体衬底的背面并用作阴极区的高浓度n型区域（15）; 和阳极电极（1）。 半导体衬底在其表面上包括其中p型区域（12）和n型区域（13）彼此相邻的结构，其中p型区域（12）连接到阳极 电极（1）和n型区域（13）经由开关（14）连接到阳极电极（1）。 控制单元（40）连接到开关（14）的控制端子。 在半导体器件（10）的导通状态下，控制单元（40）向开关（14）的控制端子输出高频脉冲，以接通和断开开关（14）。

公开(公告)号：US08901838B2

公开(公告)日：2014-12-02

申请号：US13560613

申请日：2012-07-27

申请人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Nobuyoshi Matsuura ,  Hideo Ishii

发明人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Nobuyoshi Matsuura ,  Hideo Ishii

IPC分类号： H05B37/02 ,  H01L29/78 ,  H05B33/08 ,  G09G3/34 ,  H01L29/06 ,  H01L29/417

CPC分类号： H01L29/7813 ,  G09G3/342 ,  G09G2320/064 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/41766 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7815 ,  H05B33/0818 ,  H05B33/0827 ,  H05B33/089 ,  Y02B20/347

摘要： The semiconductor device is included in the LED driving circuit (current regulator) of driving the LED array (with series-connected number m×parallel-connected number n), and is formed of a plurality (n pieces) of LED driving devices of controlling a current (constant-current driving) flowing in each string. A vertical semiconductor device, for example, a vertical MOSFET is used as the LED driving device. Both of a main device functioning as a constant-current driving device and a subsidiary device functioning as a circuit-breaking switch during dimming are formed inside a chip of the device, which are formed of the vertical semiconductor devices. In a first surface of the device, each source region of the main device and the subsidiary device is formed so as to be insulated from each other through an isolation region.

摘要翻译： 半导体器件包括在驱动LED阵列（串联数字×并联数n）的LED驱动电路（电流调节器）中，并且由多个（n个）LED驱动装置形成， 在每个串中流动的电流（恒流驱动）。 使用垂直半导体器件，例如垂直MOSFET作为LED驱动器件。 作为恒流驱动装置的主装置和在调光期间用作断路开关的辅助装置都形成在由垂直半导体装置形成的装置的芯片的内部。 在装置的第一表面中，主装置和附属装置的每个源区形成为通过隔离区彼此绝缘。

公开(公告)号：US08692805B2

公开(公告)日：2014-04-08

申请号：US12955590

申请日：2010-11-29

申请人： Takayuki Hashimoto

发明人： Takayuki Hashimoto

IPC分类号： G09G5/00

CPC分类号： G06F3/03542 ,  G06F3/0386 ,  G06F3/0421

摘要： A coordinate input apparatus for making an input by bringing a pointing device into contact with an input area of an apparatus main body is provided, wherein the pointing device comprises: a timer configured to generate a transmission cycle by timekeeping; a detection unit configured to detect the presence/absence of an input instruction according to the presence/absence of contact of the pointing device with the input area; wherein when the detection unit detects the presence of the input instruction, and then detects the absence of the input instruction, the timer continues timekeeping of the transmission cycle during a predetermined holding period.

摘要翻译： 提供了一种通过使指示装置与装置主体的输入区域接触而进行输入的坐标输入装置，其中，所述指示装置包括：定时器，被配置为通过计时生成发送周期; 检测单元，被配置为根据指示设备与输入区域的接触的存在/不存在来检测输入指令的存在/不存在; 其中，当所述检测单元检测到所述输入指令的存在，然后检测到所述输入指令不存在时，所述定时器在预定保持期间内继续所述传输周期的计时。

公开(公告)号：US08658328B2

公开(公告)日：2014-02-25

申请号：US12934471

申请日：2009-03-26

申请人： Seiichi Suda ,  Kaori Jono ,  Fumio Hashimoto ,  Takayuki Hashimoto

发明人： Seiichi Suda ,  Kaori Jono ,  Fumio Hashimoto ,  Takayuki Hashimoto

IPC分类号： H01M8/24 ,  H01M8/00 ,  H01M8/02

CPC分类号： H01M8/2432 ,  H01M8/0263 ,  H01M8/0276 ,  H01M8/0282 ,  H01M8/0286 ,  H01M8/2404 ,  H01M8/2425 ,  H01M8/2485 ,  H01M2008/1293 ,  Y02P70/56

摘要： A stack structure for a solid oxide fuel cell includes a plurality of stacked single cells, each having a fuel electrode layer including a fuel electrode and an air electrode layer including an air electrode, the fuel electrode layer and the air electrode layer being arranged opposite each other on either side of a solid electrolyte, separators arranged between the stacked single cells to separate the single cells, and non-porous seal parts located within the fuel electrode layer and the air electrode layer, are equivalent to either the separators or the solid electrolyte at least in terms of thermal expansion and contraction characteristics, and are integrated with an edge of the fuel electrode or an edge of the air electrode, and also with the adjacent separator and the adjacent solid electrolyte.

摘要翻译： 固体氧化物型燃料电池用叠层结构体包括多个堆叠单体电池，具有包括燃料电极的燃料电极层和包括空气极的空气极层，多个燃料电极层和空气极层相对配置 另一方面，在固体电解质的两侧，布置在堆叠的单个电池之间以分离单个电池的隔板和位于燃料电极层和空气电极层内的无孔密封部件等同于隔板或固体电解质 至少在热膨胀和收缩特性方面，并且与燃料电极的边缘或空气电极的边缘以及与相邻的隔板和相邻的固体电解质结合。

公开(公告)号：US08422261B2

公开(公告)日：2013-04-16

申请号：US13548265

申请日：2012-07-13

申请人： Takayuki Hashimoto ,  Nobuyoshi Matsuura ,  Masaki Shiraishi ,  Yukihiro Satou ,  Tetsuya Kawashima

发明人： Takayuki Hashimoto ,  Nobuyoshi Matsuura ,  Masaki Shiraishi ,  Yukihiro Satou ,  Tetsuya Kawashima

IPC分类号： H02M1/00

CPC分类号： H01L25/16 ,  H01L25/074 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4903 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H02M3/1588 ,  Y02B70/1466 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.

公开(公告)号：US08120345B2

公开(公告)日：2012-02-21

申请号：US12388819

申请日：2009-02-19

申请人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Koji Tateno ,  Takuya Ishigaki

发明人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Koji Tateno ,  Takuya Ishigaki

IPC分类号： G05F1/00

CPC分类号： H02M3/156 ,  H02M2001/0025

摘要： A semiconductor device for control applied to a constant-voltage power supply device includes a digital-analog converter circuit which outputs a reference voltage corresponding to a value of a first register with taking an output voltage of a reference voltage source as a criterial reference voltage, and generates a control signal for driving a power semiconductor device based on an output voltage of an error amplifier which differentially amplifies a feedback voltage obtained by resistive-dividing on an output voltage of the constant-voltage power supply device and the reference voltage. An analog-digital converter circuit which converts the feedback voltage to a digital value with taking the output voltage of the constant-voltage power supply device as a reference voltage is provided, and based on the output, a value of a first register is corrected so as to offset an effect of an error in voltage dividing ratio of a voltage dividing resistor circuit.

摘要翻译： 一种应用于恒压电源装置的控制用半导体装置，具备数模转换电路，该数模转换电路以取参考电压源的输出电压作为标准参考电压，输出与第一寄存器的值相对应的基准电压， 并且基于误差放大器的输出电压产生用于驱动功率半导体器件的控制信号，所述误差放大器的差分放大通过对所述恒压电源装置的输出电压进行电阻分压而获得的反馈电压和所述参考电压。 提供了一种模拟数字转换器电路，其将采取恒压电源装置的输出电压的反馈电压转换为数字值作为参考电压，并且基于该输出，第一寄存器的值被校正为 以抵消分压电阻电路的分压比的误差的影响。

公开(公告)号：US08067979B2

公开(公告)日：2011-11-29

申请号：US12851849

申请日：2010-08-06

申请人： Takayuki Hashimoto ,  Nobuyoshi Matsuura ,  Masaki Shiraishi ,  Yukihiro Satou ,  Tetsuya Kawashima

发明人： Takayuki Hashimoto ,  Nobuyoshi Matsuura ,  Masaki Shiraishi ,  Yukihiro Satou ,  Tetsuya Kawashima

IPC分类号： H01L25/00

CPC分类号： H01L25/16 ,  H01L25/074 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4903 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H02M3/1588 ,  Y02B70/1466 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.

摘要翻译： 提供能够减小电感的半导体器件。 在其中将整流MOSFET，换向MOSFET和驱动这些MOSFET的驱动IC安装在一个封装上的半导体器件中，整流MOSFET，金属板和换向MOSFET被层压。 主电路的电流从封装的后表面流向其前表面。 金属板通过封装中的布线连接到输出端子。 引线键合用于连接驱动IC，整流MOSFET和换向MOSFET，所有端子都放置在同一平面上。 因此，电感变小，电源损耗和尖峰电压也降低。

公开(公告)号：US08049479B2

公开(公告)日：2011-11-01

申请号：US12818803

申请日：2010-06-18

申请人： Masaki Shiraishi ,  Takayuki Hashimoto ,  Noboru Akiyama

发明人： Masaki Shiraishi ,  Takayuki Hashimoto ,  Noboru Akiyama

IPC分类号： G05F1/595 ,  H02M1/38

CPC分类号： H02M1/08 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30107 ,  H03K17/0822 ,  H03K17/165 ,  H03K17/166 ,  H03K17/6871 ,  H01L2924/00 ,  H01L2224/45099

摘要： In a non-isolated DC/DC converter, a reference potential for a low-side pre-driver which drives a gate of a low-side MOSFET is applied from a portion except for a main circuit passing through a high-side MOSFET and the low-side MOSFET so that a parasitic inductance between a source of the low-side MOSFET and the pre-driver is increased without increasing the sum of parasitic inductances in the main circuit and negative potential driving of the gate of the low-side MOSFET can be performed and a self turn-on phenomenon can be prevented without adding any member and changing drive system.

摘要翻译： 在非隔离型DC / DC转换器中，从通过高侧MOSFET的主电路以外的部分施加驱动低侧MOSFET的栅极的低侧预驱动器的基准电位， 低侧MOSFET，使得低侧MOSFET的源极与预驱动器之间的寄生电感增加，而不增加主电路中的寄生电感的和，并且低侧MOSFET的栅极的负电位驱动 并且可以防止在不添加任何构件和改变驱动系统的情况下自启闭现象。

公开(公告)号：US08018255B2

公开(公告)日：2011-09-13

申请号：US12171347

申请日：2008-07-11

申请人： Takashi Hirao ,  Takayuki Hashimoto ,  Masaki Shiraishi

发明人： Takashi Hirao ,  Takayuki Hashimoto ,  Masaki Shiraishi

IPC分类号： H03K3/00

CPC分类号： H02M3/158 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/49175 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/30107 ,  H03K17/162 ,  H03K17/6871 ,  H03K19/018521 ,  H03K2217/0081 ,  H01L2924/00

摘要： A DC-DC converter in which self turn-on can be prevented and can improve power efficiency. In a non-insulated DC-DC converter, self turn-on is prevented by applying a negative voltage between a gate and a source of a low side MOSFET by the use of a capacitor for generating negative voltage when the low side MOSFET is in an OFF state. Also, when the low side MOSFET is in an ON state due to the capacitor for generating negative voltage, a positive voltage applied between the gate and the source of the low side MOSFET does not drop from a voltage of a gate driving DC power source that is supplied from a gate power input terminal. Therefore, the power efficiency is improved.

摘要翻译： 可以防止自我接通并可提高功率效率的DC-DC转换器。 在非绝缘DC-DC转换器中，通过在低侧MOSFET处于低压MOSFET的栅极和源极之间通过使用用于产生负电压的电容器施加负电压来防止自身接通 OFF状态。 此外，由于用于产生负电压的电容器，当低端MOSFET处于导通状态时，施加在低侧MOSFET的栅极和源极之间的正电压不会从栅极驱动DC电源的电压下降， 由栅极电源输入端子提供。 因此，功率效率得到提高。

公开(公告)号：US08008699B2

公开(公告)日：2011-08-30

申请号：US12721201

申请日：2010-03-10

申请人： Takayuki Hashimoto ,  Noboru Akiyama ,  Masaki Shiraishi ,  Tetsuya Kawashima

发明人： Takayuki Hashimoto ,  Noboru Akiyama ,  Masaki Shiraishi ,  Tetsuya Kawashima

IPC分类号： H01L27/06 ,  H01L25/18

CPC分类号： H01L25/16 ,  G06F1/26 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/0603 ,  H01L2224/40 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

摘要： Parasitic inductance of the main circuit of a power source unit is reduced. In a non-insulated DC-DC converter having a circuit in which a power MOSFET for high side switch and a power MOSFET for low side switch are connected in series, the power MOSFET for high side switch and the power MOSFET for low side switch are formed of n-channel vertical MOSFETs, and a source electrode of the power MOSFET for high side switch and a drain electrode of the power MOSFET for low side switch are electrically connected via the same die pad.

摘要翻译： 降低了电源单元主电路的寄生电感。 在具有用于高侧开关的功率MOSFET和低侧开关的功率MOSFET串联的电路的非绝缘DC-DC转换器中，用于高侧开关的功率MOSFET和用于低侧开关的功率MOSFET是 由n沟道垂直MOSFET形成，并且用于高侧开关的功率MOSFET的源极和用于低侧开关的功率MOSFET的漏电极经由相同的管芯焊盘电连接。