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    Method of forming an insulating structure having an insulating interlayer and a capping layer and method of forming a metal wiring structure using the same
    21.
    发明授权
    Method of forming an insulating structure having an insulating interlayer and a capping layer and method of forming a metal wiring structure using the same 失效
    形成具有绝缘中间层和覆盖层的绝缘结构的方法和使用其形成金属布线结构的方法

    公开(公告)号：US07202160B2

    公开(公告)日：2007-04-10

    申请号：US10899934

    申请日：2004-07-27

    Applicant: Yoon-Hae Kim ,  Kyung-Tae Lee ,  Yong-Jun Lee

    Inventor： Yoon-Hae Kim ,  Kyung-Tae Lee ,  Yong-Jun Lee

    IPC: H01L21/4763

    CPC classification number: H01L21/02126 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832

    Abstract: In a method of forming an insulating structure, an insulating interlayer is formed on a substrate using a silicon source gas and a reaction gas. A capping layer is formed in-situ on the insulating interlayer by increasing a flow rate of an oxidizing gas included in the reaction gas so that the capping layer has a second thickness when the insulating interlayer is formed on the substrate to have a first thickness. The insulating structure dose not have an interface between the insulating interlayer and the capping layer so that the insulating interlayer is not subject to damage by a cleaning solution during a subsequent cleaning process, since the cleaning solution maynot permeate into the insulating structure. Additionally, leakage current is mitigated or eliminated between the insulating interlayer and the capping layer, thereby improving the reliability of a semiconductor device including the insulating structure.

    Abstract translation: 在形成绝缘结构的方法中，使用硅源气体和反应气体在基板上形成绝缘中间层。 通过增加反应气体中包含的氧化气体的流量，在绝缘中间层上原位形成覆盖层，使得当在基板上形成绝缘中间层以具有第一厚度时，覆盖层具有第二厚度。 绝缘结构在绝缘中间层和覆盖层之间不具有界面，使得在随后的清洁过程中绝缘中间层不被清洁溶液损坏，因为清洁溶液可能不渗透到绝缘结构中。 此外，在绝缘中间层和覆盖层之间减轻或消除泄漏电流，从而提高包括绝缘结构的半导体器件的可靠性。

    INTEGRATED CIRCUIT CAPACITOR STRUCTURE
    22.
    发明申请
    INTEGRATED CIRCUIT CAPACITOR STRUCTURE 审中-公开
    集成电路电容器结构

    公开(公告)号：US20070072319A1

    公开(公告)日：2007-03-29

    申请号：US11559317

    申请日：2006-11-13

    Applicant: Jeong-Hoon AHN ,  Kyungtae LEE ,  Mu-Kyung JUNG ,  Yong-Jun LEE

    Inventor： Jeong-Hoon AHN ,  Kyungtae LEE ,  Mu-Kyung JUNG ,  Yong-Jun LEE

    IPC: H01L21/66 ,  H01L21/331 ,  G01R31/26

    CPC classification number: H01L28/55 ,  H01L21/76895 ,  H01L23/5223 ,  H01L27/0805 ,  H01L27/1085 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Embodiments of the invention include a MIM capacitor that has a high capacitance that can be manufactured without the problems that affected the prior art. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.

    Abstract translation: 本发明的实施例包括具有高电容的MIM电容器，其可以在没有影响现有技术的问题的情况下被制造。 这种电容器包括上电极，下电极和位于上电极和下电极之间的电介质层。 可以将第一电压施加到上电极，并且可以将不同于第一电压的第二电压施加到下电极。 将第一电压施加到上电极的线层位于与下电极相同的水平或比下电极低的水平位置。

    Hydraulic actuator to which limit-adjustable mechanical lock device is applied
    23.
    发明授权
    Hydraulic actuator to which limit-adjustable mechanical lock device is applied 有权

    公开(公告)号：US10480548B2

    公开(公告)日：2019-11-19

    申请号：US15539400

    申请日：2016-09-30

    Applicant: Yong Jun Lee

    Inventor： Yong Jun Lee

    IPC: F15B15/24 ,  F15B15/26 ,  F16K31/12 ,  F15B15/14 ,  F15B15/06 ,  F16K31/163 ,  F16H19/04

    Abstract: A hydraulic actuator to which a limit-adjustable mechanical lock device is applied, comprising: a housing having a first hole; side covers coupled at both sides of the housing, and having holder insertion holes formed to be opened toward the first hole side of the housing, and plugs; a first holder of which one side of the outer peripheral surface is inserted into the holder insertion hole at the plug side of the side cover by screw coupling; a second holder fitted and coupled to the inner peripheral surface of the side cover and having one end thereof screw-coupled to the second hole of the first holder; a locking means into which a rod is inserted so as to be movable in an axial direction at a predetermined distance across the second hole of the first holder and the third hole of the second holder.

    HYDRAULIC ACTUATOR TO WHICH LIMIT-ADJUSTABLE MECHANICAL LOCK DEVICE IS APPLIED
    24.
    发明申请
    HYDRAULIC ACTUATOR TO WHICH LIMIT-ADJUSTABLE MECHANICAL LOCK DEVICE IS APPLIED 审中-公开

    公开(公告)号：US20170363121A1

    公开(公告)日：2017-12-21

    申请号：US15539400

    申请日：2016-09-30

    Applicant: Yong Jun LEE

    Inventor： Yong Jun LEE

    IPC: F15B15/26 ,  F15B15/06 ,  F15B15/14 ,  F16K31/163 ,  F15B15/24 ,  F16H19/04

    Abstract: A hydraulic actuator to which a limit-adjustable mechanical lock device is applied, comprising: a housing having a first hole; side covers coupled at both sides of the housing, and having holder insertion holes formed to be opened toward the first hole side of the housing, and plugs; a first holder of which one side of the outer peripheral surface is inserted into the holder insertion hole at the plug side of the side cover by screw coupling; a second holder fitted and coupled to the inner peripheral surface of the side cover and having one end thereof screw-coupled to the second hole of the first holder; a locking means into which a rod is inserted so as to be movable in an axial direction at a predetermined distance across the second hole of the first holder and the third hole of the second holder.

    Capacitor of semiconductor device and method for manufacturing the same
    29.
    发明授权
    Capacitor of semiconductor device and method for manufacturing the same 失效
    半导体器件的电容器及其制造方法

    公开(公告)号：US08101493B2

    公开(公告)日：2012-01-24

    申请号：US12648910

    申请日：2009-12-29

    Applicant: Yong-Jun Lee

    Inventor： Yong-Jun Lee

    IPC: H01L29/02

    CPC classification number: H01L21/0273 ,  H01L21/32139 ,  H01L28/60

    Abstract: A capacitor of a semiconductor device and a method for manufacturing the same includes a lower metal layer on and/or over a semiconductor substrate; an insulating layer formed on and/or over the lower metal layer with step difference; and an upper electrode on and/or over the insulating layer pattern, wherein a top corner of the upper electrode is rounded so that a curvature pattern is formed on the top corner of the upper electrode.

    Abstract translation: 半导体器件的电容器及其制造方法包括在半导体衬底上和/或之上的下金属层; 在步进差异的下金属层上和/或上方形成绝缘层; 以及在绝缘层图案之上和/或之上的上电极，其中上电极的顶角是圆形的，使得在上电极的顶角上形成曲率图案。

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