公开(公告)号：US20080185105A1

公开(公告)日：2008-08-07

申请号：US11701854

申请日：2007-02-02

申请人： Andrew D. Bailey ,  Jack Chen ,  Yunsang Kim ,  Gregory S. Sexton

发明人： Andrew D. Bailey ,  Jack Chen ,  Yunsang Kim ,  Gregory S. Sexton

IPC分类号： C23F1/00

CPC分类号： H01L21/67069 ,  H01J37/32568 ,  H01L21/68721

摘要： Positional relationships are established in a process chamber. An upper electrode is configured with a first surface to support a wafer, and an electrode has a second surface. A linear drive is mounted on the base and a linkage connected between the drive and the upper electrode. Linkage adjustment defines a desired orientation between the surfaces. The linear drive and linkage maintain the desired orientation while the assembly moves the upper electrode with the surfaces moving relative to each other. An annular etching region defined between the electrodes enables etching of a wafer edge exclusion region extending along a top and bottom of the wafer. Removable etch defining rings are configured to define unique lengths along each of the top and bottom of the wafer to be etched. Positional relationships of the surfaces enable limiting the etching to those unique lengths of the exclusion region.

摘要翻译： 位置关系建立在一个过程室中。 上电极配置有第一表面以支撑晶片，并且电极具有第二表面。 线性驱动器安装在基座上，连接在驱动器和上电极之间。 连接调整定义了表面之间的期望取向。 线性驱动器和连接件保持所需的取向，同时组件移动上电极，表面相对于彼此移动。 限定在电极之间的环形蚀刻区域能够蚀刻沿着晶片的顶部和底部延伸的晶片边缘排除区域。 可移除蚀刻限定环被配置为沿待蚀刻的晶片的顶部和底部的每一个限定独特的长度。 表面的位置关系使得能够将蚀刻限制到排除区域的那些独特长度。

公开(公告)号：US07316761B2

公开(公告)日：2008-01-08

申请号：US10357652

申请日：2003-02-03

申请人： Kenny L. Doan ,  Yunsang Kim ,  Mahmoud Dahimene ,  Jingbao Liu ,  Bryan Pu ,  Hongqing Shan ,  Don Curry

发明人： Kenny L. Doan ,  Yunsang Kim ,  Mahmoud Dahimene ,  Jingbao Liu ,  Bryan Pu ,  Hongqing Shan ,  Don Curry

IPC分类号： H01L21/306 ,  H01L21/3065 ,  C23C16/00 ,  C23C16/455 ,  C23C16/50 ,  C23C16/503

CPC分类号： H01J37/32009 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/3266

摘要： Apparatus for plasma etching a layer of material upon a substrate comprising an anode having a first region protruding from a second region, wherein the second region defines a plane and the first region extends from said plane. In one embodiment, at least one solenoid is disposed near the apparatus to magnetize the plasma.

摘要翻译： 一种用于等离子体蚀刻材料层的装置，包括具有从第二区域突出的第一区域的阳极，其中所述第二区域限定平面，并且所述第一区域从所述平面延伸。 在一个实施例中，至少一个螺线管设置在设备附近以磁化等离子体。

公开(公告)号：US20070068900A1

公开(公告)日：2007-03-29

申请号：US11440561

申请日：2006-05-24

申请人： Yunsang Kim ,  Andrew Bailey

发明人： Yunsang Kim ,  Andrew Bailey

IPC分类号： C23F1/00

CPC分类号： H01J37/32532 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32862

摘要： Improved mechanisms of removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and etch byproducts on substrate backside and chamber interior is provided to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. An exemplary plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode surrounding a substrate support in the plasma processing chamber, wherein the substrate support is configured to receive the substrate and the bottom edge electrode and the substrate support are electrically isolated from each other by a bottom dielectric ring. The chamber also includes a top edge electrode surrounding a gas distribution plate opposing the substrate support, wherein the top edge electrode and the gas distribution plate are electrically isolated from each other by a top dielectric ring, and the top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate.

摘要翻译： 提供了去除蚀刻副产物，电介质膜和金属薄膜附近基板斜边缘的改进机理，以及衬底背面和腔室内部的蚀刻副产物，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。 提供了一种构造成清洁衬底的斜边缘的示例性等离子体蚀刻处理室。 所述腔室包括围绕所述等离子体处理室中的衬底支撑件的底部边缘电极，其中所述衬底支撑件构造成接收所述衬底，并且所述底部边缘电极和所述衬底支撑件通过底部电介质环彼此电隔离。 该室还包括围绕与衬底支撑件相对的气体分配板的顶部边缘电极，其中顶部边缘电极和气体分配板通过顶部介电环彼此电隔离，并且顶部边缘电极和底部边缘电极 被配置为产生清洁等离子体以清洁基板的斜边缘。

公开(公告)号：US20070068623A1

公开(公告)日：2007-03-29

申请号：US11237327

申请日：2005-09-27

申请人： Yunsang Kim ,  Andrew Bailey ,  Hyungsuk Yoon

发明人： Yunsang Kim ,  Andrew Bailey ,  Hyungsuk Yoon

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/02087 ,  H01J37/321 ,  H01J37/32623

摘要： A plasma processing system including a plasma chamber for processing a substrate is disclosed. The apparatus includes a chuck configured for supporting a first surface of the substrate. The apparatus also includes a plasma resistant barrier disposed in a spaced-apart relationship with respect to a second surface of the substrate, the second surface being opposite the first surface, the plasma resistant barrier substantially shielding a center portion of the substrate and leaving an annular periphery area of the second surface of the substrate substantially unshielded by the plasma resistant barrier. The apparatus further includes at least one powered electrode, the powered electrode operating cooperatively with the plasma resistant barrier to generate confined plasma from a plasma gas, the confined plasma being substantially confined to the annular periphery portion of the substrate and away from the center portion of the substrate.

摘要翻译： 公开了一种包括用于处理衬底的等离子体室的等离子体处理系统。 该装置包括配置用于支撑基板的第一表面的卡盘。 该装置还包括等离子体阻挡屏障，其相对于衬底的第二表面以间隔开的关系设置，第二表面与第一表面相对，等离子体阻挡屏障基本上屏蔽衬底的中心部分并留下环形 衬底的第二表面的周边区域基本上不受等离子体阻挡屏障的屏蔽。 所述设备还包括至少一个动力电极，所述动力电极与所述等离子体阻挡屏障协同工作以从等离子体气体产生约束等离子体，所述受限等离子体基本上限制在所述衬底的环形周边部分并且远离所述衬底的中心部分 底物。

公开(公告)号：US20060054279A1

公开(公告)日：2006-03-16

申请号：US10938680

申请日：2004-09-10

申请人： Yunsang Kim ,  Andras Kuthi

发明人： Yunsang Kim ,  Andras Kuthi

IPC分类号： H01L21/306

CPC分类号： H01L21/02071 ,  H01L21/02046 ,  H01L21/31116 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2001/2437

摘要： An apparatus for cleaning a substrate in a reactive ion etch process is disclosed. The apparatus is configured to produce an atmospheric plasma using a RF generation device. The apparatus includes a plasma forming chamber including a cavity defined by a set of interior chamber walls comprised of a dielectric material. The apparatus also includes an atmospheric plasma generated by the RF generation device, the atmospheric plasma protruding from a first end of the cavity to clean the substrate.

摘要翻译： 公开了一种用于在反应离子蚀刻工艺中清洁衬底的设备。 该装置被配置为使用RF产生装置产生大气等离子体。 该装置包括等离子体形成室，其包括由一组由电介质材料组成的内部室壁限定的空腔。 该装置还包括由RF产生装置产生的大气等离子体，大气等离子体从空腔的第一端突出以清洁衬底。

公开(公告)号：US20050026430A1

公开(公告)日：2005-02-03

申请号：US10632873

申请日：2003-08-01

申请人： Yunsang Kim ,  Neungho Shin ,  Heeyeop Chae ,  Joey Chiu ,  Yan Ye ,  Fang Tian ,  Xiaoye Zhao

发明人： Yunsang Kim ,  Neungho Shin ,  Heeyeop Chae ,  Joey Chiu ,  Yan Ye ,  Fang Tian ,  Xiaoye Zhao

IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31116 ,  Y10S438/963

摘要： The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-containing gas, and one or more additive gases, such as a hydrogen-rich hydrofluorocarbon gas, an inert gas and/or a carbon-oxygen gas. The process provides a low-k dielectric to a photoresist mask etching selectivity ratio greater than about 5:1, a low-k dielectric to a barrier/liner layer etching selectivity ratio greater about 10:1, and a low-k dielectric etch rate higher than about 4000 Å/min.

摘要翻译： 本发明包括使用等离子体蚀刻室中的气体混合物的等离子体来选择性地蚀刻在衬底上形成的低k电介质材料的方法。 气体混合物包括富氟碳氟化合物或氢氟烃气体，含氮气体和一种或多种添加剂气体，例如富氢氢氟烃气体，惰性气体和/或碳 - 氧气体。 该方法提供了大于约5:1的光致抗蚀剂掩模蚀刻选择比的低k电介质，大于10:1的低k电介质到阻挡层/衬层蚀刻选择比，以及低k电介质蚀刻速率 高于约4000Å/ min。

公开(公告)号：US09053925B2

公开(公告)日：2015-06-09

申请号：US13081264

申请日：2011-04-06

申请人： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Gregory Sexton ,  Yunsang Kim ,  William S. Kennedy

发明人： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Gregory Sexton ,  Yunsang Kim ,  William S. Kennedy

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01J37/32 ,  H01L21/67

CPC分类号： H01L21/0209 ,  H01J37/32366 ,  H01J37/32568 ,  H01J2237/335 ,  H01L21/67069

摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.

摘要翻译： 一种用于清洁半导体衬底的斜边缘的装置。 该装置包括：具有圆柱形顶部的下支撑件; 围绕顶部部分的外边缘并适于支撑基底的较低等离子体排除区（PEZ）环; 与所述下支撑件相对并且具有圆柱形底部部分的上介电部件; 围绕底部的外边缘并与下部PEZ环相对的上部PEZ环; 以及至少一个射频（RF）电源，其用于在由所述上和下PEZ环限定的环形空间中将工艺气体激发成等离子体，其中所述环形空间包围所述斜面边缘。

公开(公告)号：US08852384B2

公开(公告)日：2014-10-07

申请号：US13584646

申请日：2012-08-13

申请人： KeeChan Kim ,  Yunsang Kim ,  Andrew D. Bailey, III

发明人： KeeChan Kim ,  Yunsang Kim ,  Andrew D. Bailey, III

IPC分类号： H01L21/3065 ,  H01L21/67 ,  G01N21/68

CPC分类号： H01L21/67069 ,  G01N21/68 ,  H01L21/67028 ,  H01L21/67253

摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.

摘要翻译： 提供了一种用于在斜边清洁操作期间检测反应室中的等离子体无约束的方法。 该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。 该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。 如果偏离阈值波长强度超过目标偏差，则清除结束。

公开(公告)号：US20140007901A1

公开(公告)日：2014-01-09

申请号：US13543028

申请日：2012-07-06

申请人： Jack Chen ,  Gregory Sexton ,  Yunsang Kim

发明人： Jack Chen ,  Gregory Sexton ,  Yunsang Kim

IPC分类号： B08B7/00 ,  B32B1/04

CPC分类号： H01L21/67028 ,  H01L21/67051 ,  Y10T428/218

摘要： Methods and apparatus for more efficiently cleaning a substrate having a notch in a plasma processing chamber configured for bevel edge cleaning. A notched plasma exclusion ring an inner periphery and an outer periphery is provided. The notched plasma exclusion ring has a ring notch formed at its outer periphery. The notched plasma exclusion ring has a notch apex dimension that is at least as large as a notch apex dimension of the substrate notch and a notch opening dimension that is at least as large as a notch opening dimension of the substrate notch. Methods for obtaining misalignment data and for subsequently rotate substrates to more efficiently clean the substrate notch are also disclosed.

摘要翻译： 用于更有效地清洁在等离子体处理室中具有凹口的衬底的方法和装置，其被配置用于斜面边缘清洁。 提供了一个内周边和外围的缺口等离子体排除环。 缺口等离子体排除环在其外周形成有环形凹口。 缺口等离子体排除环具有至少与基板切口的切口顶点尺寸一样大的切口顶点尺寸和至少与基板切口的切口开口尺寸一样大的切口开口尺寸。 还公开了用于获得未对准数据并随后旋转衬底以更有效地清洁衬底凹口的方法。

公开(公告)号：US08414790B2

公开(公告)日：2013-04-09

申请号：US12774712

申请日：2010-05-05

申请人： Andrew D. Bailey, III ,  Yunsang Kim

发明人： Andrew D. Bailey, III ,  Yunsang Kim

IPC分类号： C03C15/00

CPC分类号： C23G1/24 ,  C23G1/103 ,  C23G5/00 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/321 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/6708

摘要： The various embodiments described in the specification provide improved mechanisms of removal of unwanted deposits on the bevel edge to improve process yield. The embodiments provide apparatus and methods of treating the bevel edge of a copper plated substrate to convert the copper at the bevel edge to a copper compound that can be wet etched with a fluid at a high etch selectivity in comparison to copper. In one embodiment, the wet etch of the copper compound at high selectivity to copper allows the removal of the non-volatile copper at substrate bevel edge in a wet etch processing chamber. The plasma treatment at bevel edge allows the copper at bevel edge to be removed at precise spatial control to about 2 mm or below, such as about 1 mm, about 0.5 mm or about 0.25 mm, to the very edge of substrate. In addition, the apparatus and methods described above for bevel edge copper removal do not have the problems of copper etching fluid being splashed on the device regions to cause defects and thinning of copper films. Therefore, device yield can be greatly improved.

摘要翻译： 在说明书中描述的各种实施例提供了改进的机理，去除斜边上的不需要的沉积物以提高工艺产量。 实施例提供了处理镀铜衬底的斜边缘以将斜面边缘处的铜转化为铜化合物的设备和方法，铜化合物可以与铜相比以高蚀刻选择性用流体进行湿蚀刻。 在一个实施方案中，铜化合物对铜的高选择性的湿法蚀刻允许在湿蚀刻处理室中在衬底斜面边缘处去除非挥发性铜。 在斜边缘处的等离子体处理允许在精确空间控制下将斜角边缘处的铜去除至基板的最外边缘约2mm或更小，例如约1mm，约0.5mm或约0.25mm。 此外，上述用于斜边铜剥离的装置和方法不存在铜蚀刻流体溅射在器件区域上以引起铜膜缺陷和变薄的问题。 因此，可以大大提高器件产量。