公开(公告)号：US20170062260A1

公开(公告)日：2017-03-02

申请号：US15353499

申请日：2016-11-16

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Lara HAWRYLCHAK ,  Steven V. SANSONI

IPC: H01L21/683

CPC classification number: H01L21/6833 ,  Y10T29/49815

Abstract: Embodiments described herein generally relate to an electrostatic chuck (ESC). The ESC may contain a first plurality of electrodes adapted to electrostatically couple a substrate to the ESC and a second plurality of electrodes adapted to electrostatically couple the ESC to a substrate support. Instead of being integrally disposed within the substrate support, the ESC may be easily removed from the substrate support and removed from a chamber for maintenance or replacement purposes.

Abstract translation: 本文描述的实施例一般涉及静电卡盘（ESC）。 ESC可以包含适于将基板静电耦合到ESC的第一多个电极和适于使ESC与基板支撑件静电耦合的第二多个电极。 代替整体地设置在基板支撑件内，ESC可以容易地从基板支撑件移除并从腔室移除以进行维护或替换。

公开(公告)号：US20170029941A1

公开(公告)日：2017-02-02

申请号：US15237414

申请日：2016-08-15

Applicant: Applied Materials, Inc.

Inventor： Adolph Miller ALLEN ,  Lara HAWRYLCHAK ,  Zhigang XIE ,  Muhammad M. RASHEED ,  Rongjun WANG ,  Xianmin TANG ,  Zhendong LIU ,  Tza-Jing GUNG ,  Srinivas GANDIKOTA ,  Mei CHANG ,  Michael S. COX ,  Donny YOUNG ,  Kirankumar SAVANDAIAH ,  Zhenbin GE

IPC: C23C14/56 ,  H01J37/32 ,  C23C14/34 ,  H01J37/34 ,  C23C14/35 ,  C23C14/54

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

Abstract translation: 本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。 处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。 该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置 的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

公开(公告)号：US20160376710A1

公开(公告)日：2016-12-29

申请号：US15187838

申请日：2016-06-21

Applicant: Applied Materials, Inc.

Inventor： Dustin W. HO ,  Michael S. COX ,  Zheng YUAN

IPC: C23C22/82 ,  C23C16/02

CPC classification number: C23C16/0245 ,  C23C16/4412

Abstract: Embodiments disclosed herein generally relate to plasma abatement processes and apparatuses. A plasma abatement process takes effluent from a foreline of a processing chamber, such as an implant chamber, and reacts the effluent with a reagent. The effluent contains a pyrophoric byproduct. A plasma generator placed within the foreline path may ionize the effluent and the reagent to facilitate a reaction between the effluent and the reagent. The ionized species react to form compounds which remain in a gaseous phase at conditions within the exhaust stream path. In another embodiment, the ionized species may react to form compounds which condense out of the gaseous phase. The condensed particulate matter is then removed from the effluent by a trap. The apparatuses may include an implant chamber, a plasma generator, one or more pumps, and a scrubber.

Abstract translation: 本文公开的实施方案一般涉及等离子体消除处理和装置。 等离子体消除过程从处理室的前级管线（例如植入室）中取出流出物，并将流出物与试剂反应。 流出物含有自燃副产物。 放置在前级管路内的等离子体发生器可使流出物和试剂离子化，以促进流出物与试剂之间的反应。 离子化物质在废气流路径内的条件下反应形成残留在气相中的化合物。 在另一个实施方案中，电离物质可以反应以形成从气相中冷凝的化合物。 然后通过陷阱将浓缩的颗粒物质从流出物中除去。 该装置可以包括植入室，等离子体发生器，一个或多个泵和洗涤器。

公开(公告)号：US20150251133A1

公开(公告)日：2015-09-10

申请号：US14638871

申请日：2015-03-04

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Monique MCINTOSH ,  Colin John DICKINSON ,  Paul E. FISHER ,  Yutaka TANAKA ,  Zheng YUAN

IPC: B01D53/32 ,  B01D53/64 ,  B01J19/08 ,  B01D53/46

CPC classification number: B01D53/32 ,  B01D53/54 ,  B01D53/64 ,  B01D53/70 ,  B01D53/76 ,  B01D2251/00 ,  B01D2251/10 ,  B01D2251/102 ,  B01D2251/104 ,  B01D2251/108 ,  B01D2251/20 ,  B01D2251/202 ,  B01D2251/204 ,  B01D2251/2062 ,  B01D2251/208 ,  B01D2251/502 ,  B01D2252/103 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2257/60 ,  B01D2257/7025 ,  B01D2257/93 ,  B01D2258/0216 ,  B01D2259/818 ,  B01J19/088 ,  B01J2219/0815 ,  B01J2219/0875 ,  B01J2219/0894 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32669 ,  H01J2237/002 ,  H01J2237/335 ,  Y02C20/20 ,  Y02C20/30

Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.

Abstract translation: 描述了用于从处理室中减少含有污染物的化合物的等离子体消除过程。 等离子体消除过程采用来自诸如沉积室的处理室的气态前级流出物，并使排出物在放置在前级管路中的等离子体室内反应。 血浆将流出物中的化合物解离，将流出物转化为更良性的化合物。 减轻试剂可能有助于减轻化合物。 减排过程可能是挥发或冷凝减排过程。 代表性的挥发减压试剂包括例如CH 4，H 2 O，H 2，NF 3，SF 6，F 2，HCl，HF，Cl 2和HBr。 代表性的减压剂包括例如H 2，H 2 O，O 2，N 2，O 3，CO，CO 2，NH 3，N 2 O，CH 4及其组合。

公开(公告)号：US20150048735A1

公开(公告)日：2015-02-19

申请号：US14338779

申请日：2014-07-23

Applicant: Applied Materials, Inc.

Inventor： Brian T. WEST ,  Roger M. JOHNSON ,  Michael S. COX

IPC: H01J37/34 ,  H01J25/50 ,  H01J23/12

CPC classification number: H01J37/3405 ,  H01J23/05 ,  H01J23/10 ,  H01J25/50 ,  H01J25/587 ,  H01J37/345 ,  H03B9/10 ,  H03C3/32 ,  H03C5/04

Abstract: Embodiments of the present invention generally provide a magnetron that is encapsulated by a material that is tolerant of heat and water. In one embodiment, the entire magnetron is encapsulated. In another embodiment, the magnetron includes magnetic pole pieces, and the magnetic pole pieces are not covered by the encapsulating material.

Abstract translation: 本发明的实施例通常提供由受热和水耐受的材料包封的磁控管。 在一个实施例中，整个磁控管被封装。 在另一个实施例中，磁控管包括磁极片，磁极片不被封装材料覆盖。

公开(公告)号：US20150043123A1

公开(公告)日：2015-02-12

申请号：US14452801

申请日：2014-08-06

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX

IPC: H01L21/683

CPC classification number: H01L21/6833 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/6831 ,  Y10T29/49083

Abstract: Embodiments of the present disclosure provide an electrostatic chuck (ESC) having azimuthal temperature control. In one embodiment, the electrostatic chuck includes an insulating base, a dielectric layer disposed on the insulating base, the dielectric layer having a substrate supporting surface, an electrode assembly disposed between the insulating base and the substrate supporting surface, and a plurality of heating elements coupled to the insulating base, the heating elements azimuthally control a temperature profile across a substrate surface.

Abstract translation: 本公开的实施例提供了具有方位角温度控制的静电卡盘（ESC）。 在一个实施例中，静电卡盘包括绝缘基底，设置在绝缘基底上的电介质层，介电层具有基底支撑表面，设置在绝缘基底和基底支撑表面之间的电极组件，以及多个加热元件 耦合到绝缘基底，加热元件方位角地控制跨越衬底表面的温度分布。

公开(公告)号：US20150036260A1

公开(公告)日：2015-02-05

申请号：US14451167

申请日：2014-08-04

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX

IPC: H01L21/683

CPC classification number: H01L21/6833

Abstract: Embodiments provided herein generally relate to an electrostatic chuck (ESC). The ESC may comprise a reduced number of stress initiation points, such as holes through the ESC, which may improve the mechanical integrity of the ESC. Electrodes disposed within the ESC may be connected to electrical contacts and a power source via conductive leads, which may be coupled or formed along a peripheral edge of the ESC. Thus, the need for holes formed in the ESC may be reduced or eliminated. In addition, gas channels may be formed on a top surface, a bottom surface, or both. The gas channels may reduce or eliminate the need for a gas channel formed through the ESC and may facilitate heat transfer between a substrate support, the ESC, and a substrate coupled to the ESC.

Abstract translation: 本文提供的实施例通常涉及静电卡盘（ESC）。 ESC可以包括减少数量的应力起始点，例如通过ESC的孔，其可以改善ESC的机械完整性。 设置在ESC内的电极可以经由导电引线连接到电触点和电源，导电引线可以沿着ESC的周边边缘耦合或形成。 因此，可以减少或消除在ESC中形成的孔的需要。 此外，气体通道可以形成在顶表面，底表面或两者上。 气体通道可以减少或消除通过ESC形成的气体通道的需要，并且可以促进衬底支撑件ESC和与ESC联接的衬底之间的热传递。

公开(公告)号：US20190246481A1

公开(公告)日：2019-08-08

申请号：US16206276

申请日：2018-11-30

Applicant: Applied Materials, Inc.

Inventor： Rongping WANG ,  Jibing ZENG ,  David Muquing HOU ,  Michael S. COX ,  Zheng YUAN ,  James L'HEUREUX

IPC: H05H1/24 ,  C23C16/507 ,  H01J37/32 ,  H05H1/46 ,  C23C16/44

Abstract: Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

公开(公告)号：US20180037987A1

公开(公告)日：2018-02-08

申请号：US15784972

申请日：2017-10-16

Applicant: Applied Materials, Inc.

Inventor： Brian WEST ,  Michael S. COX ,  Jeonghoon OH

IPC: C23C14/54 ,  H01L21/67 ,  H01J37/32 ,  C23C14/50 ,  H01L23/34

CPC classification number: C23C14/541 ,  C23C14/50 ,  C23C16/4586 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67109 ,  H01L23/34

Abstract: Embodiments of the present disclosure provides apparatus and method for stabilizing substrate temperature by flowing a flow of cooling gas to an inlet of cooling channels in a substrate support, receiving the flow of cooling gas from an outlet of the cooling channel using a heat exchanger, and releasing the cooling gas to an immediate environment, such as a cleanroom or a minienvironment.

公开(公告)号：US20170301524A1

公开(公告)日：2017-10-19

申请号：US15487324

申请日：2017-04-13

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Brian T. WEST ,  Roger M. JOHNSON ,  Yan ROZENZON ,  Dinkesh SOMANNA ,  Dustin W. HO

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32844 ,  H01J2237/002 ,  H01J2237/18 ,  H01J2237/31701 ,  H01L21/67069 ,  Y02C20/30

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes an exhaust cooling apparatus located downstream of a plasma source. The exhaust cooling apparatus includes at least one cooling plate a device for introducing turbulence to the exhaust flowing within the exhaust cooling apparatus. The device may be a plurality of fins, a cylinder with a curved top portion, or a diffuser with angled blades. The turbulent flow of the exhaust within the exhaust cooling apparatus causes particles to drop out of the exhaust, minimizing particles forming in equipment downstream of the exhaust cooling apparatus.