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    Selective epitaxial germanium growth on silicon-trench fill and in situ doping
    21.
    发明授权
    Selective epitaxial germanium growth on silicon-trench fill and in situ doping 有权
    硅沟填充和原位掺杂的选择性外延锗生长

    公开(公告)号：US08652951B2

    公开(公告)日：2014-02-18

    申请号：US13765733

    申请日：2013-02-13

    Applicant: Applied Materials, Inc.

    Inventor： Yi-Chiau Huang ,  Jiping Li ,  Miao Jin ,  Bingxi Sun Wood ,  Errol Antonio C. Sanchez ,  Yihwan Kim

    IPC: H01L21/20

    CPC classification number: H01L21/02694 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02647 ,  H01L21/02675

    Abstract: Methods and apparatus for forming a germanium containing film on a patterned substrate are described. The patterned substrate is a silicon, or silicon containing material, and may have a mask material formed on a surface thereof. The germanium containing material is formed selectively on exposed silicon in the recesses of the substrate, and an overburden of at least 50% is formed on the substrate. The germanium containing layer is thermally treated using pulsed laser radiation, which melts a portion of the overburden, but does not melt the germanium containing material in the recesses. The germanium containing material in the recesses is typically annealed, at least in part, by the thermal treatment. The overburden is then removed.

    Abstract translation: 描述了在图案化衬底上形成含锗膜的方法和装置。 图案化衬底是硅或含硅材料，并且可以在其表面上形成掩模材料。 含锗材料在衬底的凹槽中的暴露的硅上选择性地形成，并且在衬底上形成至少50％的覆盖层。 使用脉冲激光辐射对含锗层进行热处理，所述脉冲激光辐射熔化上覆层的一部分，但不熔化凹陷中的含锗材料。 凹陷中的含锗材料通常通过热处理至少部分退火。 然后卸下覆盖层。

    Methods and apparatus for integrated selective monolayer doping
    24.
    发明授权
    Methods and apparatus for integrated selective monolayer doping 有权

    公开(公告)号：US11373871B2

    公开(公告)日：2022-06-28

    申请号：US16577353

    申请日：2019-09-20

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Benjamin Colombeau ,  Wolfgang R. Aderhold ,  Andy Lo ,  Yi-Chiau Huang

    IPC: H01L21/225 ,  H01L29/66 ,  H01L21/324 ,  H01L21/02

    Abstract: Methods and apparatus for forming doped material layers in semiconductor devices using an integrated selective monolayer doping (SMLD) process. A concentration of dopant is deposited on a material layer using the SMLD process and the concentration of dopant is then annealed to diffuse the concentration of dopant into the material layer. The SMLD process conforms the concentration of dopant to a surface of the material layer and may be performed in a single CVD chamber. The SMLD process may also be repeated to further alter the diffusion parameters of the dopant into the material layer. The SMLD process is compatible with p-type dopant species and n-type dopant species.

    Method of growing doped group IV materials
    25.
    发明授权
    Method of growing doped group IV materials 有权

    公开(公告)号：US11031241B2

    公开(公告)日：2021-06-08

    申请号：US16704124

    申请日：2019-12-05

    Applicant: Applied Materials, Inc.

    Inventor： Yi-Chiau Huang ,  Errol Antonio C Sanchez

    IPC: H01L21/02

    Abstract: Methods for forming films during semiconductor device fabrication by soaking a substrate in dopant are discussed herein. The dopant soak is performed in a process chamber using at least one dopant precursor for a predetermined period of time to form a dopant layer on the substrate. The process chamber is subsequently purged of the at least one dopant precursor. At least one film precursor is introduced into the process chamber after the process chamber is purged. A film is epitaxially formed on the substrate to have at least one of a target resistivity, dopant concentration, and/or thickness. Post-processing operations can include annealing or patterning the semiconductor film, or depositing additional layers thereon.

    METHOD TO ENHANCE GROWTH RATE FOR SELECTIVE EPITAXIAL GROWTH
    28.
    发明申请
    METHOD TO ENHANCE GROWTH RATE FOR SELECTIVE EPITAXIAL GROWTH 审中-公开

    公开(公告)号：US20180158682A1

    公开(公告)日：2018-06-07

    申请号：US15882939

    申请日：2018-01-29

    Applicant: Applied Materials, Inc.

    Inventor： Abhishek Dube ,  Xuebin Li ,  Yi-Chiau Huang ,  Hua Chung ,  Schubert S. Chu

    IPC: H01L21/02

    CPC classification number: H01L21/02576 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636

    Abstract: Embodiments of the present disclosure generally relate to methods for forming a doped silicon epitaxial layer on semiconductor devices at increased pressure and reduced temperature. In one embodiment, the method includes heating a substrate disposed within a processing chamber to a temperature of about 550 degrees Celsius to about 800 degrees Celsius, introducing into the processing chamber a silicon source comprising trichlorosilane (TCS), a phosphorus source, and a gas comprising a halogen, and depositing a silicon containing epitaxial layer comprising phosphorus on the substrate, the silicon containing epitaxial layer having a phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater, wherein the silicon containing epitaxial layer is deposited at a chamber pressure of about 150 Torr or greater.

    Method to enhance growth rate for selective epitaxial growth
    29.
    发明授权
    Method to enhance growth rate for selective epitaxial growth 有权

    公开(公告)号：US09881790B2

    公开(公告)日：2018-01-30

    申请号：US15091332

    申请日：2016-04-05

    Applicant: Applied Materials, Inc.

    Inventor： Abhishek Dube ,  Xuebin Li ,  Yi-Chiau Huang ,  Hua Chung ,  Schubert S. Chu

    IPC: H01L21/02

    CPC classification number: H01L21/02576 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636

    Abstract: Embodiments of the present disclosure generally relate to methods for forming a doped silicon epitaxial layer on semiconductor devices at increased pressure and reduced temperature. In one embodiment, the method includes heating a substrate disposed within a processing chamber to a temperature of about 550 degrees Celsius to about 800 degrees Celsius, introducing into the processing chamber a silicon source comprising trichlorosilane (TCS), a phosphorus source, and a gas comprising a halogen, and depositing a silicon containing epitaxial layer comprising phosphorus on the substrate, the silicon containing epitaxial layer having a phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater, wherein the silicon containing epitaxial layer is deposited at a chamber pressure of about 150 Torr or greater.

    Method to grow thin epitaxial films at low temperature
    30.
    发明授权
    Method to grow thin epitaxial films at low temperature 有权
    在低温下生长薄的外延膜的方法

    公开(公告)号：US09530638B2

    公开(公告)日：2016-12-27

    申请号：US14870792

    申请日：2015-09-30

    Applicant: Applied Materials, Inc.

    Inventor： Abhishek Dube ,  Hua Chung ,  Jenn-Yue Wang ,  Xuebin Li ,  Yi-Chiau Huang ,  Schubert S. Chu

    IPC: H01L21/20 ,  H01L21/02 ,  H01L29/78

    CPC classification number: H01L21/823431 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3065 ,  H01L29/7848 ,  H01L29/7851

    Abstract: Implementations of the present disclosure generally relate to methods for epitaxial growth of a silicon material on an epitaxial film. In one implementation, the method includes forming an epitaxial film over a semiconductor fin, wherein the epitaxial film includes a top surface having a first facet and a second facet, and forming an epitaxial layer on at least the top surface of the epitaxial film by alternatingly exposing the top surface to a first precursor gas comprising one or more silanes and a second precursor gas comprising one or more chlorinated silanes at a temperature of about 375° C. to about 450° C. and a chamber pressure of about 5 Torr to about 20 Torr.

    Abstract translation: 本公开的实施方式一般涉及在外延膜上硅材料外延生长的方法。 在一个实施方案中，该方法包括在半导体鳍片上形成外延膜，其中外延膜包括具有第一面和第二面的顶表面，并且通过交替地在至少外延膜的顶表面上形成外延层 将顶表面暴露于包含一种或多种硅烷的第一前体气体和包含一种或多种氯化硅烷的第二前体气体，其温度为约375℃至约450℃，室压力为约5托至约 20乇

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