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公开(公告)号:US12191115B2
公开(公告)日:2025-01-07
申请号:US16694062
申请日:2019-11-25
Applicant: Applied Materials, Inc.
Inventor: Venkata Sharat Chandra Parimi , Xiaoquan Min , Zheng John Ye , Prashant Kumar Kulshreshtha , Vinay K Prabhakar , Lu Xu , Kwangduk Douglas Lee
IPC: C23C16/458 , C23C16/34 , C23C16/40 , C23C16/44 , C23C16/455 , H01J37/32 , H01L21/02
Abstract: A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described.
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公开(公告)号:US11956883B2
公开(公告)日:2024-04-09
申请号:US18088310
申请日:2022-12-23
Applicant: Applied Materials, Inc.
Inventor: Zheng John Ye , Daemian Raj Benjamin Raj , Shailendra Srivastava , Nikhil Sudhindrarao Jorapur , Ndanka O. Mukuti , Dmitry A. Dzilno , Juan Carlos Rocha
CPC classification number: H05H1/46 , H01J37/32128 , H01J37/32165 , H01J37/32183
Abstract: A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.
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公开(公告)号:US11935724B2
公开(公告)日:2024-03-19
申请号:US18168421
申请日:2023-02-13
Applicant: Applied Materials, Inc.
Inventor: Kartik Ramaswamy , Igor Markovsky , Zhigang Chen , James D. Carducci , Kenneth S. Collins , Shahid Rauf , Nipun Misra , Leonid Dorf , Zheng John Ye
CPC classification number: H01J37/32091 , H01J37/32018 , H01J37/32082 , H01J37/32183 , H01J37/32541 , H01J37/32568 , H01J37/32577 , H01J37/32587 , H01J37/32596 , H01J37/3266 , H01J37/32715 , H01J37/32834
Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
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公开(公告)号:US11276562B2
公开(公告)日:2022-03-15
申请号:US16807156
申请日:2020-03-02
Applicant: Applied Materials, Inc.
Inventor: Zheng John Ye , Ganesh Balasubramanian , Thuy Britcher , Jay D. Pinson, II , Hiroji Hanawa , Juan Carlos Rocha-Alvarez , Kwangduk Douglas Lee , Martin Jay Seamons , Bok Hoen Kim , Sungwon Ha
IPC: H01L21/00 , C23C16/00 , H01J37/32 , C23C16/509
Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.
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公开(公告)号:US20210313147A1
公开(公告)日:2021-10-07
申请号:US17353668
申请日:2021-06-21
Applicant: Applied Materials, Inc.
Inventor: Kartik Ramaswamy , Igor Markovsky , Zhigang Chen , James D. Carducci , Kenneth S. Collins , Shahid Rauf , Nipun Misra , Leonid Dorf , Zheng John Ye
IPC: H01J37/32
Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
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公开(公告)号:US11043361B2
公开(公告)日:2021-06-22
申请号:US15793802
申请日:2017-10-25
Applicant: Applied Materials, Inc.
Inventor: Kartik Ramaswamy , Igor Markovsky , Zhigang Chen , James D. Carducci , Kenneth S. Collins , Shahid Rauf , Nipun Misra , Leonid Dorf , Zheng John Ye
Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
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公开(公告)号:US10663491B2
公开(公告)日:2020-05-26
申请号:US15893173
申请日:2018-02-09
Applicant: Applied Materials, Inc.
Inventor: Zheng John Ye , Jay D. Pinson, II , Juan Carlos Rocha , Abdul Aziz Khaja
IPC: C23C16/52 , C23C16/50 , H01J37/32 , G01R15/14 , G01R15/18 , C23F4/00 , C23C16/505 , G01R15/16 , H01L21/67
Abstract: A voltage-current sensor enables more accurate measurement of the voltage, current, and phase of RF power that is delivered to high-temperature processing region. The sensor includes a planar body comprised of a non-organic, electrically insulative material, a measurement opening formed in the planar body, a voltage pickup disposed around the measurement opening, and a current pickup disposed around the measurement opening. Because of the planar configuration and material composition of the sensor, the sensor can be disposed proximate to or in contact with a high-temperature surface of a plasma processing chamber.
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公开(公告)号:US09824862B2
公开(公告)日:2017-11-21
申请号:US14548692
申请日:2014-11-20
Applicant: APPLIED MATERIALS, INC.
Inventor: Kartik Ramaswamy , Igor Markovsky , Zhigang Chen , James D. Carducci , Kenneth S. Collins , Shahid Rauf , Nipun Misra , Leonid Dorf , Zheng John Ye
CPC classification number: H01J37/32091 , H01J37/32018 , H01J37/32082 , H01J37/32183 , H01J37/32541 , H01J37/32568 , H01J37/32577 , H01J37/32587 , H01J37/32596 , H01J37/3266 , H01J37/32715 , H01J37/32834
Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
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公开(公告)号:US11189517B2
公开(公告)日:2021-11-30
申请号:US16791875
申请日:2020-02-14
Applicant: Applied Materials, Inc.
Inventor: Zheng John Ye , Edward Haywood , Adam Fischbach , Timothy Joseph Franklin
IPC: H01L21/683 , H01J37/32
Abstract: Embodiments described herein relate to apparatus and methods for substantially reducing an occurrence of radio frequency (RF) coupling through a chucking electrode. The chucking electrode is disposed in an electrostatic chuck positioned on a substrate support. The substrate support is coupled to a process chamber body. An RF source is used to generate a plasma in a process volume adjacent to the substrate support. An impedance matching circuit is disposed between the RF source and the chucking electrode is disposed in the electrostatic chuck. An electrostatic chuck filter is coupled between the chucking electrode and the chucking power source.
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公开(公告)号:US11130142B2
公开(公告)日:2021-09-28
申请号:US16846000
申请日:2020-04-10
Applicant: APPLIED MATERIALS, INC.
Inventor: Dmitry Lubomirsky , Vladimir Knyazik , Hamid Noorbakhsh , Jason Della Rosa , Zheng John Ye , Jennifer Y. Sun , Sumanth Banda
IPC: C23C16/40 , B05B1/00 , C23C16/455 , H01J37/32 , B05B1/18
Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a substrate processing chamber includes a body having a first side and an opposing second side; a gas distribution plate disposed proximate the second side of the body; and a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body, wherein the body is electrically coupled to the gas distribution plate through the clamp.
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