公开(公告)号：US20160086815A1

公开(公告)日：2016-03-24

申请号：US14543618

申请日：2014-11-17

Applicant: Applied Materials, Inc.

Inventor： Mandar Pandit ,  Xikun Wang ,  Zhenjiang Cui ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139

Abstract: A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a fluorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.

Abstract translation: 描述了一种去除氮化钛硬掩模的方法。 在去除之前，硬掩模位于低k电介质层之上，并且低k电介质层在去除过程之后保持相对较低的净介电常数。 低k电介质层可以是在通孔底部具有铜的双镶嵌结构的一部分。 在氮化钛硬掩模去除之前沉积无孔碳层以保护低k电介质层和铜。 使用从含氟前体的远程等离子体中形成的等离子体流出物，用气相蚀刻去除氮化钛硬掩模。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。

公开(公告)号：US20160068969A1

公开(公告)日：2016-03-10

申请号：US14479030

申请日：2014-09-05

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Alan Tso ,  Anchuan Wang ,  Nitin K. Ingle ,  Hiroshi Hamana

IPC: C23F4/00 ,  H01J37/32

CPC classification number: H01J37/32733 ,  H01J37/32357 ,  H01J37/32853 ,  H01J37/32862 ,  H01L21/02063 ,  H01L21/02071

Abstract: Methods of preventing microcontamination from developing on substrates when the substrates are removed from a substrate processing system are described. During processing in the substrate processing mainframe, fluorine adatoms are present (perhaps left by a prior process in the mainframe) on the surface of the substrate. The fluorine adatoms develop into microcontamination upon exposure to typical atmospheric conditions. A hydrogen-containing precursor is flowed into a remote plasma region to form plasma effluents. The plasma effluents are flowed into a substrate processing region to remove or react with the fluorine adatoms in a treatment operation. Following the treatment operation, the concentration of fluorine on or near the surface is reduced and the development of microcontamination after breaking vacuum is curtailed.

Abstract translation: 描述了当从基板处理系统移除基板时防止微粒化在基板上显影的方法。 在基板处理主机中的处理期间，在基板的表面上存在氟吸附原子（可能留在主机中的先前处理过程）。 氟吸附原子在暴露于典型的大气条件下会发展成微生物。 含氢前体流入远程等离子体区域以形成等离子体流出物。 在处理操作中，等离子体流出物流入基底处理区域以除去或与氟吸附原子反应。 在处理操作之后，表面上或附近的氟浓度降低，并且减少了真空后的微生物的发展。

公开(公告)号：US20130230986A1

公开(公告)日：2013-09-05

申请号：US13768688

申请日：2013-02-15

Applicant: APPLIED MATERIALS, INC.

Inventor： NAGARAJAN RAJAGOPALAN ,  Mei-yee Shek ,  Albert Lee ,  Annamalai Lakshmanan ,  Li-Qun Xia ,  Zhenjiang Cui

IPC: H01L21/321

CPC classification number: H01L21/321 ,  C23C16/325 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/3115 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76877 ,  H01L21/76886

Abstract: Methods are provided for processing a substrate for depositing an adhesion layer between a conductive material and a dielectric layer. In one aspect, the invention provides a method for processing a substrate including positioning a substrate having a conductive material disposed thereon, introducing a reducing compound or a silicon based compound, exposing the conductive material to the reducing compound or the silicon based compound, and depositing a silicon carbide layer without breaking vacuum.

Abstract translation: 提供了用于处理用于在导电材料和电介质层之间沉积粘合层的衬底的方法。 一方面，本发明提供了一种处理衬底的方法，包括定位其上布置有导电材料的衬底，引入还原化合物或硅基化合物，将导电材料暴露于还原化合物或硅基化合物，以及沉积 没有破坏真空的碳化硅层。

公开(公告)号：US20250087494A1

公开(公告)日：2025-03-13

申请号：US18244583

申请日：2023-09-11

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Rohan Puligoru Reddy ,  Xiaolin C. Chen ,  Wanxing Xu ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/311

Abstract: Exemplary semiconductor processing methods may include flowing an etchant precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may define an exposed region of a metal-containing hardmask material and an exposed region of a material characterized by a dielectric constant of less than or about 4.0. The methods may include contacting the substrate with the etchant precursor. The methods may include removing at least a portion of the metal-containing hardmask material.

公开(公告)号：US20230386830A1

公开(公告)日：2023-11-30

申请号：US17827356

申请日：2022-05-27

Applicant: Applied Materials, Inc.

Inventor： Xiaolin C. Chen ,  Baiwei Wang ,  Rohan Puligoru Reddy ,  Wanxing Xu ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/02 ,  H01L29/423 ,  H01L29/49 ,  H01L21/311

CPC classification number: H01L21/02244 ,  H01L29/42392 ,  H01L29/495 ,  H01L21/31122

Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a semiconductor processing chamber, where a substrate may be positioned. The substrate may include a trench formed between two columns and molybdenum-containing metal regions in a plurality of recesses formed in at least one of the columns. At least two of the molybdenum-containing metal regions may be connected by a molybdenum-containing first liner formed on at least a portion of a sidewall of the trench. The methods may include forming a plasma of the oxygen-containing precursor. The methods may include contacting the molybdenum-containing first liner with plasma effluents of the oxygen-containing precursor, thereby forming an oxidized portion of molybdenum. The methods may include providing a halide precursor. The methods may include contacting oxidized portion of the molybdenum with plasma effluents of the halide precursor, thereby removing the oxidized portion of molybdenum from the sidewall of the trench.

公开(公告)号：US11682560B2

公开(公告)日：2023-06-20

申请号：US16157419

申请日：2018-10-11

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Hanshen Zhang ,  Daniella Holm

IPC: C23F1/12 ,  H01L21/311 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/31116 ,  H01L21/0206 ,  H01L21/67167

Abstract: Exemplary etching methods may include flowing a halogen-containing precursor into a substrate processing region of a semiconductor processing chamber. The halogen-containing precursor may be characterized by a gas density greater than or about 5 g/L. The methods may include contacting a substrate housed in the substrate processing region with the halogen-containing precursor. The substrate may define an exposed region of a hafnium-containing material. The methods may also include removing the hafnium-containing material.

公开(公告)号：US20230015080A1

公开(公告)日：2023-01-19

申请号：US17376337

申请日：2021-07-15

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Rohan Puligoru Reddy ,  Xiaolin C. Chen ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/311 ,  H01J37/32

Abstract: Exemplary etching methods may include modifying an exposed surface of a layer of metal oxide on a substrate housed in a processing region of a semiconductor processing chamber to produce a modified portion of metal oxide. The methods may include contacting the modified portion of metal oxide with a fluorine-containing precursor. The contacting may produce a metal oxy-fluoride material. The methods may include flowing an etchant precursor into the processing region. The methods may include contacting the metal oxy-fluoride material with the etchant precursor. The methods may include removing the metal oxy-fluoride material.

公开(公告)号：US20220351979A1

公开(公告)日：2022-11-03

申请号：US17863880

申请日：2022-07-13

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/3065 ,  C23F1/12

Abstract: Exemplary etching methods may include flowing a fluorine-containing precursor and a hydrogen-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma of the fluorine-containing precursor and the hydrogen-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents into a substrate processing region housing a substrate. The substrate may include an exposed region of a tantalum or titanium material and an exposed region of a silicon-containing material. The methods may include contacting the substrate with the plasma effluents. The methods may include removing the tantalum or titanium material selectively to the silicon-containing material. The tantalum or titanium material may be removed at a rate of at least 20:1 relative to the silicon-containing material.

公开(公告)号：US11488835B2

公开(公告)日：2022-11-01

申请号：US17100141

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Rohan Puligoru Reddy ,  Anchuan Wang

IPC: H01L21/3213 ,  H01L21/67 ,  H01L21/02 ,  H01L21/3065

Abstract: Exemplary etching methods may include flowing a halogen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce plasma effluents. The methods may include contacting a substrate housed in a processing region with the plasma effluents. The substrate may define an exposed region of tungsten oxide. The contacting may produce a tungsten oxy-fluoride material. The methods may include flowing an etchant precursor into the processing region. The methods may include contacting the tungsten oxy-fluoride material with the etchant precursor. The methods may include removing the tungsten oxy-fluoride material.

公开(公告)号：US20220344172A1

公开(公告)日：2022-10-27

申请号：US17240149

申请日：2021-04-26

Applicant: Applied Materials, Inc.

Inventor： Baiwei Wang ,  Xiaolin C. Chen ,  Rohan Puligoru Reddy ,  Oliver Jan ,  Zhenjiang Cui ,  Anchuan Wang

IPC: H01L21/3213 ,  H01L21/306 ,  H01L21/02 ,  C23F4/02

Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of ruthenium, and the contacting may produce ruthenium tetroxide. The methods may include vaporizing the ruthenium tetroxide from a surface of the exposed region of ruthenium. An amount of oxidized ruthenium may remain. The methods may include contacting the oxidized ruthenium with a hydrogen-containing precursor. The methods may include removing the oxidized ruthenium.