公开(公告)号：US20200343358A1

公开(公告)日：2020-10-29

申请号：US16924595

申请日：2020-07-09

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Petri Raisanen ,  Michael Eugene Givens

IPC: H01L29/51 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  C23C16/455 ,  H01L29/49 ,  C23C16/34

Abstract: Methods for forming a semiconductor device structure are provided. The methods may include forming a molybdenum nitride film on a substrate by atomic layer deposition by contacting the substrate with a first vapor phase reactant comprising a molybdenum precursor, contacting the substrate with a second vapor phase reactant comprise a nitrogen precursor, and contacting the substrate with a third vapor phase reactant comprising a reducing precursor. The methods provided may also include forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV. Semiconductor device structures including molybdenum nitride films are also provided.

公开(公告)号：US10804098B2

公开(公告)日：2020-10-13

申请号：US14457058

申请日：2014-08-11

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Jung Sung-hoon ,  Verghese Mohith

IPC: H01L21/02 ,  C23C16/52 ,  C01B13/11 ,  C23C16/40 ,  C23C16/455 ,  H01L29/51

Abstract: The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).

公开(公告)号：US10720331B2

公开(公告)日：2020-07-21

申请号：US16245006

申请日：2019-01-10

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Eugene Givens

IPC: H01L21/28 ,  C23C16/455 ,  H01L29/49 ,  H01L21/8238 ,  C23C16/34 ,  H01L29/78

Abstract: Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments, methods may include contacting a substrate with a first vapor phase reactant comprising a transition metal precursor and contacting the substrate with a second vapor phase reactant comprising an alkyl-hydrazine precursor. In some embodiments, related semiconductor device structures may include a PMOS transistor gate structure, the PMOS transistor gate structure including a transition metal nitride film and a gate dielectric between the transition nitride film and a semiconductor body. The transition metal nitride film includes a predominant (200) crystallographic orientation.

公开(公告)号：US20190164763A1

公开(公告)日：2019-05-30

申请号：US16245006

申请日：2019-01-10

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Eugene Givens

IPC: H01L21/28 ,  H01L29/49 ,  C23C16/455 ,  C23C16/34 ,  H01L21/8238 ,  H01L29/78

CPC classification number: H01L21/28088 ,  C23C16/34 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/823828 ,  H01L29/4966 ,  H01L29/78

Abstract: Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments, methods may include contacting a substrate with a first vapor phase reactant comprising a transition metal precursor and contacting the substrate with a second vapor phase reactant comprising an alkyl-hydrazine precursor. In some embodiments, related semiconductor device structures may include a PMOS transistor gate structure, the PMOS transistor gate structure including a transition metal nitride film and a gate dielectric between the transition nitride film and a semiconductor body. The transition metal nitride film includes a predominant (200) crystallographic orientation.

公开(公告)号：US09905492B2

公开(公告)日：2018-02-27

申请号：US15397319

申请日：2017-01-03

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael E. Givens ,  Qi Xie ,  Petri Raisanen

IPC: H01L23/31 ,  H01L21/02 ,  H01L23/02 ,  H01L21/67 ,  H01L23/29 ,  H01L21/306 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L23/3171 ,  C23C16/4405 ,  C23C16/45544 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/306 ,  H01L21/67011 ,  H01L23/02 ,  H01L23/29 ,  H01L23/293 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.

公开(公告)号：US08993054B2

公开(公告)日：2015-03-31

申请号：US13941134

申请日：2013-07-12

Applicant: ASM IP Holding B.V.

Inventor： Sung-Hoon Jung ,  Petri Raisanen ,  Eric Jen Cheng Liu ,  Mike Schmotzer

IPC: C23C16/00 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/45534 ,  C23C16/45544

Abstract: Systems and methods of reducing outgassing of a substance within a reaction chamber of a reactor are disclosed. Exemplary methods include depositing a barrier layer within the reaction chamber and using a scavenging precursor to react with species on a surface of the reaction chamber. Exemplary systems include gas-phase deposition systems, such as atomic layer deposition systems, which include a barrier layer source and/or a scavenging precursor source fluidly coupled to a reaction chamber of the system.

Abstract translation: 公开了在反应器的反应室内减少物质的除气的系统和方法。 示例性方法包括在反应室内沉积阻挡层并使用清除前体与反应室表面上的物质反应。 示例性系统包括气相沉积系统，例如原子层沉积系统，其包括流体耦合到系统的反应室的阻挡层源和/或清除前体源。

公开(公告)号：US20140322862A1

公开(公告)日：2014-10-30

申请号：US14256728

申请日：2014-04-18

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Vladimir Machkaoutsan ,  Jan Willem Maes ,  Michael Givens ,  Petri Raisanen

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2481 ,  G11C13/0007 ,  G11C2213/71 ,  H01L45/08 ,  H01L45/085 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1641

Abstract: A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD), doping the resistive switching oxide layer with a metal dopant different from metal forming the metal oxide, and forming a second electrode by thermal atomic layer deposition (ALD), where the resistive switching layer is interposed between the first electrode and the second electrode. In some embodiments, forming the resistive switching oxide may be performed without exposing a surface of the switching oxide layer to a surface-modifying plasma treatment after depositing the metal oxide.

Abstract translation: 公开了一种形成电阻随机存取存储器（RRAM）装置的方法。 该方法包括：形成第一电极，通过热原子层沉积（ALD）形成包含金属氧化物的电阻式开关氧化物层，用与形成金属氧化物的金属不同的金属掺杂剂掺杂电阻式开关氧化物层，以及形成第二电极 通过热原子层沉积（ALD），其中电阻式开关层介于第一电极和第二电极之间。 在一些实施例中，在沉积金属氧化物之后，可以进行形成电阻式开关氧化物而不使开关氧化物层的表面暴露于表面改性等离子体处理。

公开(公告)号：US20250092519A1

公开(公告)日：2025-03-20

申请号：US18830706

申请日：2024-09-11

Applicant: ASM IP Holding B.V.

Inventor： Jereld Lee Winkler ,  Petri Raisanen

IPC: C23C16/455

Abstract: Various embodiments of the present technology may provide a system with a bypass line to a foreline of a reaction chamber. The system may include a pump coupled to the foreline. The system may include a pressure-flow controller upstream from the bypass line. The bypass line may be coupled to the foreline at the pump inlet. The bypass line may include a low-flow pathway where the conductance is between 1% and 10% relative to unrestricted flow. The bypass line can comprise a decomposition device configured to decompose the fluid (e.g., gas) in the bypass line.

公开(公告)号：US12087586B2

公开(公告)日：2024-09-10

申请号：US17227621

申请日：2021-04-12

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Eric James Shero ,  Charles Dezelah ,  Giuseppe Alessio Verni ,  Petri Raisanen

IPC: H01L21/28 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01L29/49

CPC classification number: H01L21/28088 ,  C23C16/34 ,  C23C16/45544 ,  C23C16/52 ,  H01L29/4966

Abstract: Methods and systems for depositing chromium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a deposition process, depositing a chromium nitride layer onto a surface of the substrate. The deposition process can include providing a chromium precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The deposition process may be a thermal cyclical deposition process.

公开(公告)号：US12018365B2

公开(公告)日：2024-06-25

申请号：US17947230

申请日：2022-09-19

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  David Marquardt ,  Thomas Aswad

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/56

CPC classification number: C23C16/4407 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/46 ,  C23C16/56

Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include, a reaction chamber and a susceptor dispose in the reaction chamber configured for supporting a substrate thereon, the susceptor comprising a plurality of through-holes in an axial direction of the susceptor. The apparatus may also include, a plurality of lift pins, each of the lift pins being disposed within a respective through-hole, and at least one gas transmitting channel comprising one or more gas channel outlets, the one or more gas channel outlets being disposed proximate to the through-holes. Methods for processing a substrate within a reaction chamber are also disclosed.