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公开(公告)号：US20140109832A1
公开(公告)日：2014-04-24
申请号：US14057160
申请日：2013-10-18
Applicant: ASM IP Holding B.V.
Inventor： Ki Jong KIM , Dae Youn Kim , Hyun Soo Jang
IPC: C23C16/452
CPC classification number: C23C16/452 , C23C16/509 , H01J37/32082 , H01J37/32577
Abstract: In a deposition apparatus, as a plurality of plasma connection terminals that transfer plasma power to a plasma electrode are coupled in parallel to the plasma electrode, resistance caused by the plurality of plasma connection terminals is reduced and a current is distributed such that heat generated in the plurality of plasma connection terminals can be distributed. Therefore, even if high RF power is used, by preventing the plurality of plasma connection terminals from being oxidized, plasma is stably supplied and thus, stability of a deposition apparatus and the accuracy of a process can be enhanced.
Abstract translation: 在沉积装置中，作为将等离子体电力传递到等离子体电极的多个等离子体连接端子与等离子体电极并联耦合，减少了由多个等离子体连接端子引起的电阻，并且分配电流，使得在 可以分配多个等离子体连接端子。 因此，即使使用高的RF功率，通过防止多个等离子体连接端子被氧化，也能稳定地供给等离子体，能够提高蒸镀装置的稳定性和处理精度。
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公开(公告)号：US10934619B2
公开(公告)日：2021-03-02
申请号：US15802154
申请日：2017-11-02
Applicant: ASM IP Holding B.V.
Inventor： Young Hoon Kim , Yong Gyu Han , Dae Youn Kim , Hyun Soo Jang , Jeong Ho Lee
IPC: C23C16/455 , C23C16/509 , C23C16/52 , H01J37/32 , H01L21/02 , H01L21/687
Abstract: A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.
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公开(公告)号：US20190066978A1
公开(公告)日：2019-02-28
申请号：US16116708
申请日：2018-08-29
Applicant: ASM IP Holding B.V.
Inventor： Ki Chul Um , Hyun Soo Jang , Jeong Ho Lee , Yong Gyu Han
IPC: H01J37/32 , C23C16/509
Abstract: A plasma supply unit includes a first conductive portion, a second conductive portion having at least a part extending to overlap the first conductive portion, and a ground shield located between the first conductive portion and the second conductive portion, and a substrate processing apparatus including the plasma supply unit.
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公开(公告)号：US20180166258A1
公开(公告)日：2018-06-14
申请号：US15835328
申请日：2017-12-07
Applicant: ASM IP Holding B.V.
Inventor： Young Hoon Kim , Yong Gyu Han , Dae Youn Kim , Hyun Soo Jang , Jeong Ho Lee
IPC: H01J37/32 , C23C16/52 , C23C16/44 , C23C16/455
CPC classification number: H01J37/32495 , C23C16/402 , C23C16/4404 , C23C16/4412 , C23C16/45502 , C23C16/45542 , C23C16/45548 , C23C16/45565 , C23C16/52 , H01J37/32082 , H01J37/32449 , H01J37/32467 , H01J37/32477
Abstract: A substrate processing apparatus includes a partition comprising at least one through-hole, a conduit arranged in the partition through the through-hole, a gas supply unit connected to the conduit, and a low dielectric material provided between a side wall of the through-hole and the conduit.
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Patent Agency Ranking
公开(公告)号：US20180135173A1
公开(公告)日：2018-05-17
申请号：US15802154
申请日：2017-11-02
Applicant: ASM IP Holding B.V.
Inventor： Young Hoon Kim , Yong Gyu Han , Dae Youn Kim , Hyun Soo Jang , Jeong Ho Lee
IPC: C23C16/455 , C23C16/52 , H01L21/02 , C23C16/509 , H01L21/687 , H01J37/32
CPC classification number: C23C16/45538 , C23C16/45542 , C23C16/45565 , C23C16/509 , C23C16/52 , H01J37/32082 , H01J37/3244 , H01J37/32532 , H01L21/0262 , H01L21/68764
Abstract: A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.
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公开(公告)号：USD802546S1
公开(公告)日：2017-11-14
申请号：US29558834
申请日：2016-03-22
Applicant: ASM IP Holding B.V.
Designer： Hyun Soo Jang , Jeong Ho Lee , Young Hoon Kim
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公开(公告)号：USD789888S1
公开(公告)日：2017-06-20
申请号：US29558825
申请日：2016-03-22
Applicant: ASM IP Holding B.V.
Designer： Hyun Soo Jang , Jeong Ho Lee , Young Hoon Kim , Jong Su Kim
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公开(公告)号：US20170044666A1
公开(公告)日：2017-02-16
申请号：US15232603
申请日：2016-08-09
Applicant: ASM IP Holding B.V.
Inventor： Hyun Soo Jang , Jeong Ho Kee , Woo Chan Kim , Sung Hoon Jun , Jong Won Shon
IPC: C23C16/458 , C23C16/455
Abstract: Disclosed are a substrate holder and a semiconductor manufacturing apparatus including the substrate holder. The substrate holder provides a reaction region by making face-sealing contact with a reactor wall. The substrate holder has an elastic behavior when pressure is applied thereto while the substrate holder makes face-sealing contact with the reactor wall. The semiconductor manufacturing apparatus includes the substrate holder and a gas supply unit configured to supply gas to the reaction region provided by the reactor wall and the substrate holder.
Abstract translation: 公开了一种衬底保持器和包括衬底保持器的半导体制造设备。 衬底保持器通过与反应器壁进行面密封接触来提供反应区域。 当衬底保持器与反应器壁进行面密封接触时，衬底保持器具有施加压力的弹性。 半导体制造装置包括衬底保持器和气体供给单元，该气体供给单元构造成将气体供应到由反应器壁和衬底保持器提供的反应区域。
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公开(公告)号：USD724553S1
公开(公告)日：2015-03-17
申请号：US29484673
申请日：2014-03-12
Applicant: ASM IP Holding B.V.
Designer： Seung Woo Choi , Hyung Wook Noh , Jeong Jun Woo , Dae Youn Kim , Hyun Soo Jang
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