公开(公告)号：US10802408B2

公开(公告)日：2020-10-13

申请号：US16343168

申请日：2017-10-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Everhardus Cornelis Mos ,  Jochem Sebastiaan Wildenberg ,  Erik Johannes Maria Wallerbos ,  Maurits Van Der Schaar ,  Frank Staals ,  Franciscus Hendricus Arnoldus Elich

IPC: G03F7/20

Abstract: A method for improving the yield of a lithographic process, the method including: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.

公开(公告)号：US10725372B2

公开(公告)日：2020-07-28

申请号：US15546583

申请日：2016-01-20

Applicant: ASML Netherlands B.V.

Inventor： Wim Tjibbo Tel ,  Marinus Jochemsen ,  Frank Staals ,  Christopher Prentice ,  Laurent Michel Marcel Depre ,  Johannes Marcus Maria Beltman ,  Roy Werkman ,  Jochem Sebastiaan Wildenberg ,  Everhardus Cornelis Mos

IPC: G06F17/50 ,  G03F1/70 ,  G03F1/36 ,  G03F1/22 ,  G06T7/00 ,  G06F30/398 ,  G06F119/18 ,  G06F30/20 ,  G06F30/367

Abstract: A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field.

公开(公告)号：US12112260B2

公开(公告)日：2024-10-08

申请号：US16424811

申请日：2019-05-29

Applicant: ASML Netherlands B.V.

Inventor： Lorenzo Tripodi ,  Patrick Warnaar ,  Grzegorz Grzela ,  Mohammadreza Hajiahmadi ,  Farzad Farhadzadeh ,  Patricius Aloysius Jacobus Tinnemans ,  Scott Anderson Middlebrooks ,  Adrianus Cornelis Matheus Koopman ,  Frank Staals ,  Brennan Peterson ,  Anton Bernhard Van Oosten

IPC: G06N3/08 ,  G01B11/02 ,  G01N21/55 ,  G06T7/00

CPC classification number: G06N3/08 ,  G01B11/02 ,  G01N21/55 ,  G06T7/0006 ,  G06T7/001 ,  G01B2210/56 ,  G06T2207/20081 ,  G06T2207/20084 ,  G06T2207/30148

Abstract: Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.

公开(公告)号：US12050406B2

公开(公告)日：2024-07-30

申请号：US17953751

申请日：2022-09-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Frank Staals

IPC: G03F7/00

CPC classification number: G03F7/70483 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641

Abstract: A method for controlling a lithographic apparatus, and associated apparatuses. The method is configured to provide product structures to a substrate in a lithographic process and includes determining optimization data. The optimization data includes measured and/or simulated data of at least one performance parameter associated with the product structures and/or their arrangement which are to be applied to the substrate in the lithographic process. Substrate specific metrology data as measured and/or modelled before the providing of product structures to the substrate is determined, the substrate specific metrology data including metrology data relating to a characteristic of the substrate to which the structures are being applied and/or the state of the lithographic apparatus at the time that the structures are applied to the substrate. The method further includes optimizing control of the lithographic apparatus during the lithographic process based on the optimization data and the substrate specific metrology data.

公开(公告)号：US11520239B2

公开(公告)日：2022-12-06

申请号：US16075696

申请日：2017-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Frank Staals ,  Mark John Maslow ,  Roy Anunciado ,  Marinus Jochemsen ,  Hugo Augustinus Joseph Cramer ,  Thomas Theeuwes ,  Paul Christiaan Hinnen

IPC: G03F7/20

Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.

公开(公告)号：US11487209B2

公开(公告)日：2022-11-01

申请号：US16762616

申请日：2018-11-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Frank Staals

IPC: G03F7/20

Abstract: A method for controlling a lithographic apparatus, and associated apparatuses. The method is configured to provide product structures to a substrate in a lithographic process and includes determining optimization data. The optimization data includes measured and/or simulated data of at least one performance parameter associated with the product structures and/or their arrangement which are to be applied to the substrate in the lithographic process. Substrate specific metrology data as measured and/or modeled before the providing of product structures to the substrate is determined, the substrate specific metrology data including metrology data relating to a characteristic of the substrate to which the structures are being applied and/or the state of the lithographic apparatus at the time that the structures are applied to the substrate. The method further includes optimizing control of the lithographic apparatus during the lithographic process based on the optimization data and the substrate specific metrology data.

公开(公告)号：US11314174B2

公开(公告)日：2022-04-26

申请号：US16645672

申请日：2018-08-03

Applicant: ASML Netherlands B.V.

Inventor： Laurentius Cornelius De Winter ,  Roland Pieter Stolk ,  Frank Staals ,  Anton Bernhard Van Oosten ,  Paul Christiaan Hinnen ,  Marinus Jochemsen ,  Thomas Theeuwes ,  Eelco Van Setten

IPC: G03F7/20 ,  G03F1/24 ,  G03F1/44

Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus-dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.

公开(公告)号：US11067902B2

公开(公告)日：2021-07-20

申请号：US16635584

申请日：2018-07-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Patrick Warnaar ,  Patricius Aloysius Jacobus Tinnemans ,  Grzegorz Grzela ,  Everhardus Cornelis Mos ,  Wim Tjibbo Tel ,  Marinus Jochemsen ,  Bart Peter Bert Segers ,  Frank Staals

IPC: G03F7/20

Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

公开(公告)号：US10816904B2

公开(公告)日：2020-10-27

申请号：US16461044

申请日：2018-05-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Davit Harutyunyan ,  Fei Jia ,  Frank Staals ,  Fuming Wang ,  Hugo Thomas Looijestijn ,  Cornelis Johannes Rijnierse ,  Maxim Pisarenco ,  Roy Werkman ,  Thomas Theeuwes ,  Tom Van Hemert ,  Vahid Bastani ,  Jochem Sebastiaan Wildenberg ,  Everhardus Cornelis Mos ,  Erik Johannes Maria Wallerbos

IPC: G03F7/20 ,  G05B13/04 ,  H01L21/66

Abstract: A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method including: obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.

公开(公告)号：US10691030B2

公开(公告)日：2020-06-23

申请号：US16192853

申请日：2018-11-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Frank Staals ,  Eric Jos Anton Brouwer ,  Carlo Cornelius Maria Luijten ,  Jean-Pierre Agnes Henricus Marie Vaessen

IPC: G03F7/20 ,  G01N21/956 ,  G01N21/47

Abstract: A focus metrology target includes one or more periodic arrays of features. A measurement of focus performance of a lithographic apparatus is based at least in part on diffraction signals obtained from the focus metrology target. Each periodic array of features includes a repeating arrangement of first zones interleaved with second zones, a feature density being different in the first zones and the second zones. Each first zone includes a repeating arrangement of first features. A minimum dimension of each first feature is close to but not less than a resolution limit of the printing by the lithographic apparatus, so as to comply with a design rule in a given a process environment. A region of high feature density may further include a repeating arrangement of larger features.