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公开(公告)号：US20100181583A1
公开(公告)日：2010-07-22
申请号：US11494984
申请日：2006-07-28
申请人： Matthias Peter , Uwe Strausse , Matthias Sabathil
发明人： Matthias Peter , Uwe Strausse , Matthias Sabathil
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/02 , H01L33/32 , H01L2924/0002 , H01S5/2004 , H01S5/32341 , H01L2924/00
摘要： A radiation-emitting semiconductor chip is specified, comprising a semiconductor body (3) having an n-conducting region (4) and a p-conducting region (5), the semiconductor body having a hole barrier layer containing a material from the material system InyGa1-x-yAlxN.
摘要翻译： 一种辐射发射半导体芯片，包括具有n导电区域（4）和p导电区域（5）的半导体本体（3），该半导体本体具有包含材料体系的材料的空穴阻挡层 InyGa1-x-yAlxN。
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公开(公告)号：US09029878B2
公开(公告)日：2015-05-12
申请号：US13522508
申请日：2011-01-17
申请人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
发明人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
CPC分类号： H01L25/0753 , H01L33/22 , H01L33/507 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.
摘要翻译： 一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置 在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合 面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。
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公开(公告)号：US08684540B2
公开(公告)日：2014-04-01
申请号：US13378308
申请日：2010-06-15
申请人： Stefan Grötsch , Simon Kocur , Matthias Sabathil
发明人： Stefan Grötsch , Simon Kocur , Matthias Sabathil
CPC分类号： H04N9/3111 , G03B21/2013 , G03B21/204 , G03B33/08 , H01L25/0756 , H01L27/15 , H01L33/22 , H01L33/382 , H01L2924/0002 , H04N9/3164 , H01L2924/00
摘要： An optical projection apparatus includes a first light source, a second light source, and an imaging element, which is illuminated by the first light source and the second light source during operation. The light source includes a light-emitting diode chip that emits red light during operation. The second light source includes a first light-emitting diode chip, which emits green light during operation. A second light-emitting diode chip emits blue light during operation. The second light-emitting diode chip is arranged on the first light-emitting diode chip at a radiation exit surface of the first light-emitting diode chip. Electromagnetic radiation generated in the first light-emitting diode chip during operation passes through the second light-emitting diode chip.
摘要翻译： 光学投影设备包括第一光源，第二光源和成像元件，其在操作期间由第一光源和第二光源照射。 光源包括在操作期间发出红光的发光二极管芯片。 第二光源包括在操作期间发出绿光的第一发光二极管芯片。 第二个发光二极管芯片在运行期间发出蓝光。 第二发光二极管芯片被布置在第一发光二极管芯片的第一发光二极管芯片的辐射出射表面处。 在操作中在第一发光二极管芯片中产生的电磁辐射通过第二发光二极管芯片。
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公开(公告)号：US08526476B2
公开(公告)日：2013-09-03
申请号：US12598747
申请日：2008-04-24
IPC分类号： H01S5/00
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/387 , H01L33/46 , H01L2924/0002 , H01L2933/0016 , H01S5/0217 , H01S5/0224 , H01S5/0425 , H01S5/105 , H01S5/18308 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18391 , H01S5/3095 , H01L2924/00
摘要： A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body.
摘要翻译： 具有半导体本体的半导体芯片具有提供用于产生辐射的有源区的半导体层序列。 至少在镜面层和半导体本体之间的区域中配置有镜面层和电介质层的镜面结构配置在半导体本体上。
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公开(公告)号：US08436394B2
公开(公告)日：2013-05-07
申请号：US13124145
申请日：2009-10-16
申请人： Peter Brick , Matthias Sabathil , Hagen Luckner
发明人： Peter Brick , Matthias Sabathil , Hagen Luckner
IPC分类号： H01L33/62
CPC分类号： H01L33/387 , F21S41/155 , H01L33/20 , H01L33/22 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： A luminescence diode chip includes a semiconductor layer sequence having an active layer suitable for generating electromagnetic radiation, and a first electrical connection layer, which touches and makes electrically conductive contact with the semiconductor layer sequence. The first electrical connection layer touches and makes contact with the semiconductor layer sequence in particular with a plurality of contact areas. In the case of the luminescence diode chip, an inhomogeneous current density distribution or current distribution is set in a targeted manner in the semiconductor layer sequence by means of an inhomogeneous distribution of an area density of the contact areas along a main plane of extent of the semiconductor layer sequence.
摘要翻译： 发光二极管芯片包括具有适于产生电磁辐射的有源层的半导体层序列以及接触并与半导体层序列导电接触的第一电连接层。 第一电连接层特别地与多个接触区域接触并与半导体层序列接触。 在发光二极管芯片的情况下，通过沿着主要平面的接触区域的面积密度的不均匀分布，在半导体层序列中以目标方式设定不均匀的电流密度分布或电流分布 半导体层序列。
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公开(公告)号：US08841685B2
公开(公告)日：2014-09-23
申请号：US13056589
申请日：2009-06-29
申请人： Lutz Hoeppel , Matthias Sabathil
发明人： Lutz Hoeppel , Matthias Sabathil
CPC分类号： H01L33/387 , H01L33/405 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： A description is given of an optoelectronic semiconductor chip (1) comprising a semiconductor layer sequence (2), which has an active zone (4) for generating electromagnetic radiation, and comprising a structured current spreading layer (6), which contains a transparent conductive oxide and is arranged on a main area (12) of the semiconductor layer sequence (2), wherein the current spreading layer (6) covers at least 30% and at most 60% of the main area (12).
摘要翻译： 给出了包括半导体层序列（2）的光电子半导体芯片（1）的描述，该半导体层序列（2）具有用于产生电磁辐射的有源区（4），并且包括结构化电流扩散层（6），其包含透明导电 并且布置在半导体层序列（2）的主区域（12）上，其中电流扩展层（6）覆盖主区域（12）的至少30％且至多60％。
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27.发明授权Semiconductor light-emitting diode and method for producing a semiconductor light-emitting diode 有权半导体发光二极管及半导体发光二极管的制造方法公开(公告)号：US08772804B2
公开(公告)日：2014-07-08
申请号：US12920311
申请日：2009-02-11
申请人： Magnus Ahlstedt , Johannes Baur , Ulrich Zehnder , Martin Strassburg , Matthias Sabathil , Berthold Hahn
发明人： Magnus Ahlstedt , Johannes Baur , Ulrich Zehnder , Martin Strassburg , Matthias Sabathil , Berthold Hahn
CPC分类号： H01L33/405 , H01L33/42 , H01L33/46
摘要： A semiconductor light-emitting diode (10) is proposed having at least one p-doped light-emitting diode layer (4), an n-doped light-emitting diode layer (2) and an optically active zone (3) between the p-doped light-emitting diode layer (4) and the n-doped light-emitting diode layer (2), having an oxide layer (8) consisting of a transparent conductive oxide, and having at least one mirror layer (9), wherein the oxide layer (8) is disposed between the light-emitting diode layers (2, 4) and the at least one mirror layer (9), and comprises a first boundary surface (8a) which faces the light-emitting diode layers (2, 4) and a second boundary surface (8b) which faces the at least one mirror layer (9), and wherein the second boundary surface (8b) of the oxide layer (8) has less roughness (R2) than the first boundary surface (8a) of the oxide layer (8).
摘要翻译： 提出了一种半导体发光二极管（10），其具有至少一个p掺杂发光二极管层（4），n掺杂发光二极管层（2）和光学活性区域（3） 掺杂的发光二极管层（4）和n掺杂发光二极管层（2），具有由透明导电氧化物构成的氧化物层（8），并且具有至少一个镜层（9），其中 氧化物层（8）设置在发光二极管层（2,4）和至少一个镜层（9）之间，并且包括面对发光二极管层（2）的第一边界面（8a） ，4）和面向所述至少一个镜层（9）的第二边界面（8b），并且其中所述氧化物层（8）的所述第二边界面（8b）具有比所述第一边界面 （8a）的氧化物层（8a）。
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公开(公告)号：US08354682B2
公开(公告)日：2013-01-15
申请号：US11891783
申请日：2007-08-13
申请人： Franz Eberhard , Stefan Grötsch , Norbert Linder , Jürgen Moosburger , Klaus Streubel , Ralph Wirth , Matthias Sabathil , Julius Muschaweck , Krister Bergenek
发明人： Franz Eberhard , Stefan Grötsch , Norbert Linder , Jürgen Moosburger , Klaus Streubel , Ralph Wirth , Matthias Sabathil , Julius Muschaweck , Krister Bergenek
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , G02F1/13362 , H01L33/46 , H01L33/58
摘要： A radiation-emitting component (10) having a layer stack (1) which is based on a semiconductor material and which has an active layer sequence (4) for generating electromagnetic radiation, and a filter element (2) which is arranged after the active layer sequence (4) in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (1), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element (2).
摘要翻译： 一种具有基于半导体材料并具有用于产生电磁辐射的有源层序列（4）的层堆叠（1）的辐射发射部件（10），以及布置在所述有源层之后的过滤元件（2） （A）中的第一辐射分量，并且第二辐射分量被反射到层叠体（1）中，其中第二辐射分量经受偏转过程 或吸收和发射过程，并且偏转或发射的辐射撞击在过滤元件（2）上。
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公开(公告)号：US20120133908A1
公开(公告)日：2012-05-31
申请号：US13378308
申请日：2010-06-15
申请人： Stefan Grötsch , Simon Kocur , Matthias Sabathil
发明人： Stefan Grötsch , Simon Kocur , Matthias Sabathil
CPC分类号： H04N9/3111 , G03B21/2013 , G03B21/204 , G03B33/08 , H01L25/0756 , H01L27/15 , H01L33/22 , H01L33/382 , H01L2924/0002 , H04N9/3164 , H01L2924/00
摘要： An optical projection apparatus includes a first light source, a second light source, and an imaging element, which is illuminated by the first light source and the second light source during operation. The light source includes a light-emitting diode chip that emits red light during operation. The second light source includes a first light-emitting diode chip, which emits green light during operation. A second light-emitting diode chip emits blue light during operation. The second light-emitting diode chip is arranged on the first light-emitting diode chip at a radiation exit surface of the first light-emitting diode chip. Electromagnetic radiation generated in the first light-emitting diode chip during operation passes through the second light-emitting diode chip.
摘要翻译： 光学投影设备包括第一光源，第二光源和成像元件，其在操作期间由第一光源和第二光源照射。 光源包括在操作期间发出红光的发光二极管芯片。 第二光源包括在操作期间发出绿光的第一发光二极管芯片。 第二个发光二极管芯片在运行期间发出蓝光。 第二发光二极管芯片被布置在第一发光二极管芯片的第一发光二极管芯片的辐射出射表面处。 在操作中在第一发光二极管芯片中产生的电磁辐射通过第二发光二极管芯片。
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公开(公告)号：US20110215369A1
公开(公告)日：2011-09-08
申请号：US13124145
申请日：2009-10-16
申请人： Peter Brick , Matthias Sabathil , Hagen Luckner
发明人： Peter Brick , Matthias Sabathil , Hagen Luckner
IPC分类号： H01L33/62
CPC分类号： H01L33/387 , F21S41/155 , H01L33/20 , H01L33/22 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： A luminescence diode chip includes a semiconductor layer sequence having an active layer suitable for generating electromagnetic radiation, and a first electrical connection layer, which touches and makes electrically conductive contact with the semiconductor layer sequence. The first electrical connection layer touches and makes contact with the semiconductor layer sequence in particular with a plurality of contact areas. In the case of the luminescence diode chip, an inhomogeneous current density distribution or current distribution is set in a targeted manner in the semiconductor layer sequence by means of an inhomogeneous distribution of an area density of the contact areas along a main plane of extent of the semiconductor layer sequence.
摘要翻译： 发光二极管芯片包括具有适于产生电磁辐射的有源层的半导体层序列以及接触并与半导体层序列导电接触的第一电连接层。 第一电连接层特别地与多个接触区域接触并与半导体层序列接触。 在发光二极管芯片的情况下，通过沿着主要平面的接触区域的面积密度的不均匀分布，在半导体层序列中以目标方式设定不均匀的电流密度分布或电流分布 半导体层序列。
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