公开(公告)号：US20220384309A1

公开(公告)日：2022-12-01

申请号：US17334569

申请日：2021-05-28

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Cheng-Yuan KUNG ,  Hung-Yi LIN ,  Chin-Cheng KUO ,  Wu Chou HSU

IPC: H01L23/48 ,  H01L21/768

Abstract: A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a semiconductor substrate, at least one conductive via, a second insulation layer and a conductive layer. The conductive via is disposed in the semiconductor substrate and includes an interconnection metal and a first insulation layer around the interconnection metal. A portion of the first insulation layer defines an opening to expose the interconnection metal. The second insulation layer is disposed on a surface of the semiconductor substrate and in the opening. The conductive layer is electrically disconnected with the semiconductor substrate by the second insulation layer and electrically connected to the interconnection metal of the at least one conductive via.

公开(公告)号：US20210280744A1

公开(公告)日：2021-09-09

申请号：US16809500

申请日：2020-03-04

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Tang-Yuan CHEN ,  Meng-Wei HSIEH ,  Cheng-Yuan KUNG

IPC: H01L33/14 ,  H01L33/00

Abstract: A semiconductor device package includes a carrier, an emitting element and a first package body. The carrier includes a first surface and a second surface opposite to the first surface. The emitting element is disposed on the first surface of the carrier. The first package body is disposed over the first surface of the carrier and spaced apart from the first surface of the carrier.

公开(公告)号：US20210175189A1

公开(公告)日：2021-06-10

申请号：US16703409

申请日：2019-12-04

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Cheng-Yuan KUNG ,  Hung-Yi LIN ,  Chang-Yu LIN

IPC: H01L23/00 ,  H01L23/367 ,  H01L23/64 ,  H01L21/56

Abstract: A semiconductor device package includes a redistribution layer (RDL), a semiconductor device, a transceiver, and a capacitor. The RDL has a first surface and a second surface opposite to the first surface. The semiconductor device is disposed on the first surface of the RDL. The transceiver is disposed on the second surface of the RDL. The capacitor is disposed on the second surface of the RDL. The semiconductor device has a first projected area and the capacitance has a second projected area. The first projected area overlaps with the second projected area.

公开(公告)号：US20210111165A1

公开(公告)日：2021-04-15

申请号：US16653650

申请日：2019-10-15

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chao-Kai HUNG ,  Chien-Wei CHANG ,  Ya-Chen SHIH ,  Hung-Jung TU ,  Hung-Yi LIN ,  Cheng-Yuan KUNG

IPC: H01L25/16 ,  H01L25/00 ,  H01L23/00

Abstract: A device assembly structure includes a first device and at least one second device. The first device has a first active surface and a first backside surface opposite to the first active surface, and includes a plurality of first electrical contacts disposed adjacent to the first active surface. The second device has a second active surface and a second backside surface opposite to the second active surface, and includes a plurality of second electrical contacts disposed adjacent to the second active surface. The second active surface of the second device faces the first active surface of the first device, the second electrical contacts of the second device are electrically connected to the first electrical contacts of the first device, and a thickness of the second device is less than or equal to one fifth of a thickness of the first device.

公开(公告)号：US20240371711A1

公开(公告)日：2024-11-07

申请号：US18144164

申请日：2023-05-05

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Cheng-Ting CHEN ,  Hung-Yi LIN ,  Cheng-Yuan KUNG

IPC: H01L23/13 ,  H01L23/498 ,  H01L23/66 ,  H03H9/52 ,  H03H9/64

Abstract: A package structure is provided. The package structure includes an amplifier and a filter structure. The amplifier has an active surface. The filter structure is disposed over the amplifier, and communicates with the amplifier through a first signal path substantially vertical to the active surface of the amplifier.

公开(公告)号：US20240304584A1

公开(公告)日：2024-09-12

申请号：US18119270

申请日：2023-03-08

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hai-Ming CHEN ,  Hung-Yi LIN ,  Cheng-Yuan KUNG

IPC: H01L23/00 ,  H01L23/538 ,  H10B80/00

CPC classification number: H01L24/20 ,  H01L23/5389 ,  H01L24/08 ,  H01L24/13 ,  H01L24/16 ,  H10B80/00 ,  H01L24/05 ,  H01L24/19 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08265 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/1403 ,  H01L2224/14132 ,  H01L2224/14134 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/19 ,  H01L2224/211 ,  H01L2224/214 ,  H01L2924/1433 ,  H01L2924/1436 ,  H01L2924/1437

Abstract: A package structure is provided. The package structure includes a semiconductor substrate. The semiconductor substrate includes a lower portion and an upper portion. The upper portion of the semiconductor substrate defines a high speed signal transmission region. The high speed signal transmission region includes a first region configured to communicate with a first electronic component and a second region configured to communicate with an external device. The lower portion of the semiconductor substrate defines a power transmission region

公开(公告)号：US20230420395A1

公开(公告)日：2023-12-28

申请号：US17846649

申请日：2022-06-22

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wei-Cheng LIN ,  Hung-Yi LIN ,  Cheng-Yuan KUNG ,  Hsu-Chiang SHIH ,  Cheng-Yu HO

IPC: H01L23/66 ,  H01L23/367 ,  H01L23/48 ,  H01L23/538 ,  H01L21/48

CPC classification number: H01L23/66 ,  H01L23/367 ,  H01L23/481 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H01L21/4853 ,  H01L21/4857 ,  H01L2223/6677

Abstract: The present disclosure provides an electronic device. The electronic device includes a first electronic component and a second electronic component. The first electronic component is configured to receive a radio frequency (RF) signal and amplify a power of the RF signal. The second electronic component is disposed under the first electronic component. The second electronic component includes an interconnection structure passing through the second electronic component. The interconnection structure is configured to provide a path for a transmission of the RF signal.

公开(公告)号：US20230207729A1

公开(公告)日：2023-06-29

申请号：US18115746

申请日：2023-02-28

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Tang-Yuan CHEN ,  Meng-Wei HSIEH ,  Cheng-Yuan KUNG

IPC: H01L33/14 ,  H01L33/00

CPC classification number: H01L33/14 ,  H01L33/0095 ,  H01L33/26

Abstract: A semiconductor device package includes a carrier, an emitting element and a first package body. The carrier includes a first surface and a second surface opposite to the first surface. The emitting element is disposed on the first surface of the carrier. The first package body is disposed over the first surface of the carrier and spaced apart from the first surface of the carrier.

公开(公告)号：US20230078564A1

公开(公告)日：2023-03-16

申请号：US17990645

申请日：2022-11-18

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Cheng-Yuan KUNG ,  Hung-Yi LIN ,  Meng-Wei HSIEH ,  Yu-Pin TSAI

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/50

Abstract: A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a device package and a shielding layer. The device package includes an electronic device unit and has a first surface, a second surface opposite to the first surface, and a third surface connecting the first surface to the second surface. The shielding layer is disposed on the first surface and the second surface of the device package. A common edge of the second surface and the third surface includes a first portion exposed from the shielding layer by a first length, and a common edge of the first surface and the third surface includes a second portion exposed from the shielding layer by a second length that is different from the first length.

公开(公告)号：US20230065615A1

公开(公告)日：2023-03-02

申请号：US17460057

申请日：2021-08-27

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Cheng-Yuan KUNG ,  Hung-Yi LIN

IPC: H01L23/498 ,  H01L23/48 ,  H01L23/31 ,  H01L23/00 ,  H01L23/522

Abstract: An electronic device includes a first electronic component, an encapsulant and a second electronic component. The encapsulant encapsulates the first electronic component. The second electronic component is disposed over the first electronic component and separated from the encapsulant. The second electronic component is configured to receive a power from the first electronic component.