公开(公告)号：US20210288086A1

公开(公告)日：2021-09-16

申请号：US16819023

申请日：2020-03-13

Applicant: Applied Materials, Inc.

Inventor： Luping Li ,  Jacqueline S. Wrench ,  Wen Ting Chen ,  Yixiong Yang ,  In Seok Hwang ,  Shih Chung Chen ,  Srinivas Gandikota

IPC: H01L27/146 ,  C23C16/455 ,  C23C16/20 ,  C23C16/14

Abstract: Methods and apparatus for forming reflector films are described A liner is formed on a substrate surface followed by formation of the reflector layer so that there is no oxygen exposure between liner and reflector layer formation. In some embodiments, a high aspect ratio structure is filled with a reflector material by partially filling the structure with the reflector material while growth is inhibited at a top portion of the structure, reactivating the top portion of the substrate and then filling the structure with the reflector material.

公开(公告)号：US20210134972A1

公开(公告)日：2021-05-06

申请号：US17089047

申请日：2020-11-04

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Jacqueline S. Wrench ,  Srinivas Gandikota ,  Yongjing Lin ,  Steven C.H. Hung ,  Shih Chung Chen ,  Haoyan Sha ,  Chi-Chou Lin

IPC: H01L29/49 ,  H01L29/51 ,  H01L21/28

Abstract: Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiment comprise MoN as a PMOS work function material. Some embodiments comprise TiSiN as a high-κ capping layer. Some embodiments provide improved PMOS bandedge performance. Some embodiments provide improved PMOS bandedge performance with reduced EOT penalty.

公开(公告)号：US20210098581A1

公开(公告)日：2021-04-01

申请号：US17034116

申请日：2020-09-28

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M. Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C.H. Hung ,  Srinivas Gandikota

IPC: H01L29/40 ,  H01L29/51 ,  H01L21/28 ,  H01L21/02 ,  H01L29/78

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-K dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

公开(公告)号：US20210050365A1

公开(公告)日：2021-02-18

申请号：US16643965

申请日：2018-08-28

Applicant: Applied Materials, Inc.

Inventor： Praburam Gopalraja ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L27/11582 ,  H01L27/11556

Abstract: Methods of forming memory structures are described. A metal film is deposited in the features of a structured substrate and volumetrically expanded to form pillars. A blanket film is deposited to a height less than the height of the pillars and the blanket film is removed from the top of the pillars. The height of the pillars is reduced so that the top of the pillars are below the surface of the blanket film and the process is optionally repeated to form a structure of predetermined height. The pillars can be removed from the features after formation of the predetermined height structure to form high aspect ratio features.

公开(公告)号：US10854511B2

公开(公告)日：2020-12-01

申请号：US16000431

申请日：2018-06-05

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Xinliang Lu ,  Srinivas Gandikota ,  Ziqing Duan ,  Abhijit Basu Mallick

IPC: H01L21/336 ,  H01L21/768 ,  H01L21/28 ,  H01L21/763 ,  H01L27/11556 ,  H01L27/11582 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/285 ,  G11C8/14

Abstract: Methods for forming 3D-NAND devices comprising recessing a poly-Si layer to a depth below a spaced oxide layer. A liner is formed on the spaced oxide layer and not on the recessed poly-Si layer. A metal layer is deposited in the gaps on the liner to form wordlines.

公开(公告)号：US10763090B2

公开(公告)日：2020-09-01

申请号：US15237414

申请日：2016-08-15

Applicant: Applied Materials, Inc.

Inventor： Adolph Miller Allen ,  Lara Hawrylchak ,  Zhigang Xie ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Xianmin Tang ,  Zhendong Liu ,  Tza-Jing Gung ,  Srinivas Gandikota ,  Mei Chang ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Zhenbin Ge

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  C23C14/56 ,  H01J37/32

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

公开(公告)号：US20200040448A1

公开(公告)日：2020-02-06

申请号：US16597526

申请日：2019-10-09

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick

IPC: C23C16/14 ,  C23C16/455 ,  H01L21/285

Abstract: A method of forming conformal amorphous metal films is disclosed. A method of forming crystalline metal films with a predetermined orientation is also disclosed. An amorphous nucleation layer is formed on a substrate surface. An amorphous metal layer is formed from the nucleation layer by atomic substitution. A crystalline metal layer is deposited on the amorphous metal layer by atomic layer deposition.

公开(公告)号：US20190271071A1

公开(公告)日：2019-09-05

申请号：US16123437

申请日：2018-09-06

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick

IPC: C23C16/14 ,  H01L21/285 ,  C23C16/455

Abstract: A method of forming conformal amorphous metal films is disclosed. A method of forming crystalline metal films with a predetermined orientation is also disclosed. An amorphous nucleation layer is formed on a substrate surface. An amorphous metal layer is formed from the nucleation layer by atomic substitution. A crystalline metal layer is deposited on the amorphous metal layer by atomic layer deposition.

公开(公告)号：US20190189456A1

公开(公告)日：2019-06-20

申请号：US16219328

申请日：2018-12-13

Applicant: Applied Materials, Inc.

Inventor： Amrita B. Mullick ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Susmit Singha Roy ,  Yingli Rao ,  Regina Freed ,  Uday Mitra

IPC: H01L21/306 ,  H01L21/02

CPC classification number: H01L21/306 ,  H01L21/02068

Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.

公开(公告)号：US10319604B2

公开(公告)日：2019-06-11

申请号：US15805764

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Ziqing Duan ,  Yihong Chen ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/00 ,  H01L21/321 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3213

Abstract: Processing methods comprising depositing a film on a substrate surface and in a surface feature with chemical planarization to remove the film from the substrate surface, leaving the film in the feature. A pillar is grown from the film so that the pillar grows orthogonally to the substrate surface.