公开(公告)号：US07498608B2

公开(公告)日：2009-03-03

申请号：US10493137

申请日：2002-10-28

申请人： Shigetoshi Ito ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Mototaka Taneya ,  Zenpei Tani ,  Kensaku Motoki

发明人： Shigetoshi Ito ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Mototaka Taneya ,  Zenpei Tani ,  Kensaku Motoki

IPC分类号： H01L33/00

CPC分类号： H01S5/2018 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01S5/0207 ,  H01S5/2231 ,  H01S5/3013 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2301/173

摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.

摘要翻译： 一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。 首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域 。 接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。 此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调整为40μm以上。

公开(公告)号：US20070297476A1

公开(公告)日：2007-12-27

申请号：US11702625

申请日：2007-02-06

申请人： Shigetoshi Ito ,  Yuhzoh Tsuda ,  Yoshihiro Ueta

发明人： Shigetoshi Ito ,  Yuhzoh Tsuda ,  Yoshihiro Ueta

IPC分类号： H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/028 ,  H01S5/2231 ,  H01S5/34333

摘要： A nitride semiconductor laser element includes a lower clad layer, a lower adjacent layer, a quantum well active layer, an upper adjacent layer and an upper clad layer in this order. The quantum well active layer includes a plurality of well layers formed of undoped InGaN, and an undoped barrier layer sandwiched between the well layers. The barrier layer includes a first layer formed of InGaN, a second layer formed of GaN, and a third layer formed of InGaN. The In composition ratio of the first layer and the In composition ratio of the third layer are less than half the In composition ratio of the well layer.

摘要翻译： 氮化物半导体激光元件依次包括下包层，下相邻层，量子阱有源层，上相邻层和上覆层。 量子阱活性层包括由未掺杂的InGaN形成的多个阱层和夹在阱层之间的未掺杂势垒层。 阻挡层包括由InGaN形成的第一层，由GaN形成的第二层和由InGaN形成的第三层。 第一层的In组成比和第三层的In组成比小于阱层的In组成比的一半。

公开(公告)号：US07515621B2

公开(公告)日：2009-04-07

申请号：US11702625

申请日：2007-02-06

申请人： Shigetoshi Ito ,  Yuhzoh Tsuda ,  Yoshihiro Ueta

发明人： Shigetoshi Ito ,  Yuhzoh Tsuda ,  Yoshihiro Ueta

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/028 ,  H01S5/2231 ,  H01S5/34333

摘要： A nitride semiconductor laser element includes a lower clad layer, a lower adjacent layer, a quantum well active layer, an upper adjacent layer and an upper clad layer in this order. The quantum well active layer includes a plurality of well layers formed of undoped InGaN, and an undoped barrier layer sandwiched between the well layers. The barrier layer includes a first layer formed of InGaN, a second layer formed of GaN, and a third layer formed of InGaN. The In composition ratio of the first layer and the In composition ratio of the third layer are less than half the In composition ratio of the well layer.

摘要翻译： 氮化物半导体激光元件依次包括下包层，下相邻层，量子阱有源层，上相邻层和上覆层。 量子阱活性层包括由未掺杂的InGaN形成的多个阱层和夹在阱层之间的未掺杂势垒层。 阻挡层包括由InGaN形成的第一层，由GaN形成的第二层和由InGaN形成的第三层。 第一层的In组成比和第三层的In组成比小于阱层的In组成比的一半。

公开(公告)号：US06685773B2

公开(公告)日：2004-02-03

申请号：US09847925

申请日：2001-05-03

申请人： Yoshihiro Ueta ,  Takayuki Yuasa

发明人： Yoshihiro Ueta ,  Takayuki Yuasa

IPC分类号： C30B2518

CPC分类号： H01L33/32 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/007 ,  H01L33/16 ,  Y10S117/902

摘要： A crystal growth method for growing a nitride semiconductor crystal on a sapphire substrate in a vapor phase, includes the steps of: providing a sapphire substrate having a substrate orientation inclined by about 0.05° to about 0.2° from a orientation; and allowing a nitride semiconductor crystal to grow on the surface of the sapphire substrate.

摘要翻译： 用于在气相中在蓝宝石衬底上生长氮化物半导体晶体的晶体生长方法包括以下步骤：提供具有从<0001>取向倾斜约0.05°至约0.2°的衬底取向的蓝宝石衬底; 并且允许氮化物半导体晶体在蓝宝石衬底的表面上生长。

公开(公告)号：US06380051B1

公开(公告)日：2002-04-30

申请号：US09337404

申请日：1999-06-21

申请人： Takayuki Yuasa ,  Yoshihiro Ueta

发明人： Takayuki Yuasa ,  Yoshihiro Ueta

IPC分类号： H01L2120

CPC分类号： C30B25/02 ,  B82Y20/00 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/0075 ,  H01S5/34333 ,  H01S2304/12

摘要： A method for forming a nitride compound semiconductor film of the present invention includes the steps of: providing a substrate having a portion which acts as a growth suppressing film on a outermost surface thereof; forming a growth promoting film partially on the substrate; and forming a nitride compound semiconductor on the growth promoting film.

摘要翻译： 本发明的氮化物化合物半导体膜的形成方法包括以下步骤：在其最表面上设置具有作为生长抑制膜的部分的基板; 在基材上部分形成生长促进膜; 并在生长促进膜上形成氮化物半导体。

公开(公告)号：US06252255B1

公开(公告)日：2001-06-26

申请号：US09344218

申请日：1999-06-25

申请人： Yoshihiro Ueta ,  Takayuki Yuasa

发明人： Yoshihiro Ueta ,  Takayuki Yuasa

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/007 ,  H01L33/16 ,  Y10S117/902

摘要： A crystal growth method for growing a nitride semiconductor crystal on a sapphire substrate in a vapor phase, includes the steps of: providing a sapphire substrate having a substrate orientation inclined by about 0.05° to about 0.2° from a orientation; and allowing a nitride semiconductor crystal to grow on the surface of the sapphire substrate.

摘要翻译： 用于在气相中在蓝宝石衬底上生长氮化物半导体晶体的晶体生长方法包括以下步骤：提供具有从<0001>取向倾斜约0.05°至约0.2°的衬底取向的蓝宝石衬底; 并且允许氮化物半导体晶体在蓝宝石衬底的表面上生长。

公开(公告)号：US5995527A

公开(公告)日：1999-11-30

申请号：US803303

申请日：1997-02-20

申请人： Yoshihiro Ueta ,  Kazuhiko Inoguchi ,  Takayuki Yuasa

发明人： Yoshihiro Ueta ,  Kazuhiko Inoguchi ,  Takayuki Yuasa

IPC分类号： H01L21/28 ,  H01L29/43 ,  H01S5/00 ,  H01S5/042 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： H01S5/0421 ,  H01S5/32341

摘要： A semiconductor laser device including Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1)) layers has an InN contact layer, which has a thickness ranging, preferably, from 0.1 .mu.m to 1.0 .mu.m inclusive. The contact layer is formed by a MOCVD method. When materials for formation of the InN contact layer are fed into a reactor, an organic radical material is also fed and a substrate temperature is controlled to be about 800.degree. C. during the process of growth of the InN layer.

摘要翻译： 包括GaxAlyIn1-x-yN（0≤x≤0,0≤y≤1））的半导体激光器件具有InN接触层，其厚度范围优选为0.1μm m到1.0亩。 接触层由MOCVD法形成。 当将用于形成InN接触层的材料进料到反应器中时，在InN层的生长过程中还加入有机基团材料并将衬底温度控制在约800℃。

公开(公告)号：US20130037779A1

公开(公告)日：2013-02-14

申请号：US13584353

申请日：2012-08-13

申请人： Tadashi Takeoka ,  Yoshihiko Tani ,  Kazuya Araki ,  Yoshihiro Ueta

发明人： Tadashi Takeoka ,  Yoshihiko Tani ,  Kazuya Araki ,  Yoshihiro Ueta

IPC分类号： H01L33/06

CPC分类号： H01L33/025 ,  H01L33/06 ,  H01L33/32

摘要： A nitride semiconductor light-emitting device includes an n-type nitride semiconductor layer, a V pit generation layer, an intermediate layer, a multiple quantum well light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The multiple quantum well light-emitting layer is a layer formed by alternately stacking a barrier layer and a well layer having a bandgap energy smaller than that of the barrier layer. A V pit is partly formed in the multiple quantum well light-emitting layer, and an average position of starting point of the V pit is located in the intermediate layer.

摘要翻译： 氮化物半导体发光器件包括依次提供的n型氮化物半导体层，V坑生成层，中间层，多量子阱发光层和p型氮化物半导体层。 多量子阱发光层是通过交替层叠阻挡层和具有比阻挡层的能隙小的带隙能量的阱层而形成的层。 在多量子阱发光层中部分地形成V凹坑，并且V凹坑的起始点的平均位置位于中间层中。

公开(公告)号：US20120007039A1

公开(公告)日：2012-01-12

申请号：US13039978

申请日：2011-03-03

申请人： Yoshihiro Ueta ,  Masataka Ohta ,  Yoshinobu Aoyagi ,  Misaichi Takeuchi

发明人： Yoshihiro Ueta ,  Masataka Ohta ,  Yoshinobu Aoyagi ,  Misaichi Takeuchi

IPC分类号： H01L33/04 ,  H01L21/20

CPC分类号： H01L21/0262 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02658 ,  H01L33/007

摘要： A method of crystal growth is provided which can suppress development of dislocations and cracks and a warp in a substrate. The method of crystal growth of a group III nitride semiconductor has: a step of heating a silicon substrate; and a step of forming a depressed structure on the substrate surface by advance-feeding onto the heated silicon substrate a gas containing at least TMA (trimethylaluminum).

摘要翻译： 提供一种晶体生长方法，其可以抑制位错和裂纹的发展以及基板中的翘曲。 III族氮化物半导体的晶体生长方法具有以下步骤：加热硅衬底; 以及通过向加热的硅衬底上预先给予至少含有TMA（三甲基铝）的气体，在衬底表面上形成凹陷结构的步骤。

公开(公告)号：US08816321B2

公开(公告)日：2014-08-26

申请号：US13584353

申请日：2012-08-13

申请人： Tadashi Takeoka ,  Yoshihiko Tani ,  Kazuya Araki ,  Yoshihiro Ueta

发明人： Tadashi Takeoka ,  Yoshihiko Tani ,  Kazuya Araki ,  Yoshihiro Ueta

IPC分类号： H01L29/06 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32

CPC分类号： H01L33/025 ,  H01L33/06 ,  H01L33/32

摘要： A nitride semiconductor light-emitting device includes an n-type nitride semiconductor layer, a V pit generation layer, an intermediate layer, a multiple quantum well light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The multiple quantum well light-emitting layer is a layer formed by alternately stacking a barrier layer and a well layer having a bandgap energy smaller than that of the barrier layer. A V pit is partly formed in the multiple quantum well light-emitting layer, and an average position of starting point of the V pit is located in the intermediate layer.

摘要翻译： 氮化物半导体发光器件包括依次提供的n型氮化物半导体层，V坑生成层，中间层，多量子阱发光层和p型氮化物半导体层。 多量子阱发光层是通过交替层叠阻挡层和具有比阻挡层的能隙小的带隙能量的阱层而形成的层。 在多量子阱发光层中部分地形成V凹坑，并且V凹坑的起始点的平均位置位于中间层中。