公开(公告)号：US20080042171A1

公开(公告)日：2008-02-21

申请号：US11506205

申请日：2006-08-18

申请人： Sebastian Mosler ,  Mario Hennig ,  Karsten Zeiler ,  Thi Phuong Hoa Nguyen ,  Rainer Pforr ,  Jorg Thiele

发明人： Sebastian Mosler ,  Mario Hennig ,  Karsten Zeiler ,  Thi Phuong Hoa Nguyen ,  Rainer Pforr ,  Jorg Thiele

IPC分类号： H01L29/76 ,  H01L21/8234 ,  H01L27/108 ,  H01L21/8242

CPC分类号： H01L27/088 ,  G03F1/30 ,  H01L27/0207 ,  H01L27/10885

摘要： Methods of forming transistor arrangements using alternating phase shift masks are provided. The mask may include two parallel opaque lines, a first transparent section separating the opaque lines and a second transparent section in the rest. The second transparent section may shift the phase with respect to the first transparent section by 180 degree. A phase conflict occurs along an edge between the first and the second transparent sections. A semiconductor substrate is patterned via the mask and, from the opaque lines functional active areas of a transistor pair and from the phase conflict edge, thereby resulting in a parasitic area. A separation gate is provided that is capable of switching off a parasitic transistor being formed within the parasitic area. Channel widths may be stabilized and maximized within dense transistor arrangements, for example, in a multiplexer portion of a sense amplifier arrangement for memory cell arrays.

摘要翻译： 提供了使用交替相移掩模形成晶体管布置的方法。 掩模可以包括两个平行的不透明线，分隔不透明线的第一透明部分和其余部分中的第二透明部分。 第二透明部分可以将相位相对于第一透明部分移位180度。 沿着第一和第二透明部分之间的边缘发生相位冲突。 通过掩模对半导体衬底进行图案化，并且从不透明线将晶体管对的功能有效区域和相冲突边缘图案化，由此导致寄生区域。 提供了一种能够关闭在寄生区域内形成的寄生晶体管的分离栅极。 通道宽度可以在致密晶体管布置中稳定和最大化，例如在用于存储单元阵列的读出放大器装置的多路复用器部分中。

公开(公告)号：US20050069790A1

公开(公告)日：2005-03-31

申请号：US10952885

申请日：2004-09-30

申请人： Stefan Gruss ,  Detlef Hofmann ,  Rainer Pforr ,  Mario Hennig ,  Guido Thielscher ,  Hans-Georg Froehlich

发明人： Stefan Gruss ,  Detlef Hofmann ,  Rainer Pforr ,  Mario Hennig ,  Guido Thielscher ,  Hans-Georg Froehlich

IPC分类号： G03F7/20 ,  G03F9/00 ,  H01L23/544 ,  G03C5/00

CPC分类号： G03F9/7084 ,  G03F7/70633 ,  G03F9/7076 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2223/54466 ,  H01L2924/0002 ,  Y10S430/143 ,  H01L2924/00

摘要： A method for reducing an overlay error of structures of a layer to be patterned relative to those of a reference layer includes formation of standard measurement marks assigned to one another in the two layers for determining an overlay error and for setting up further measurement marks for determining an additional optical imaging error of the projection system at least in the current layer. The further measurement marks have a geometry adapted to the geometry of selected structures of the circuit patterns to be transferred by projection from masks onto semiconductor substrates. An imaging error affects circuit structures and further measurement marks in the same way. An alignment correction for a subsequent exposure can be calculated from the measured positional deviations between the two standard measurement marks and between the standard measurement mark and the further measurement mark of the layer currently to be patterned.

摘要翻译： 用于减少要被图案化的层的结构相对于参考层的结构的覆盖误差的方法包括形成在两层中彼此分配的标准测量标记，以确定重叠误差并设置用于确定的另外的测量标记 至少在当前层中投影系统的附加光学成像误差。 另外的测量标记具有适于通过从掩模投影到半导体衬底上将要传送的电路图案的选定结构的几何形状的几何形状。 成像误差以同样的方式影响电路结构和进一步的测量标记。 可以从测量的两个标准测量标记之间的位置偏差和标准测量标记与当前要构图的层的另一测量标记之间的测量位置偏差来计算后续曝光的对准校正。

公开(公告)号：US10157804B2

公开(公告)日：2018-12-18

申请号：US14232097

申请日：2012-07-20

申请人： Rainer Pforr

发明人： Rainer Pforr

IPC分类号： G03F1/84 ,  G03F7/20 ,  H01L21/66

摘要： The invention relates to a method for determining a critical dimension variation of a photolithographic mask which comprises (a) using layout data of the photolithographic mask to determine at least two sub-areas of the photolithographic mask, each sub-area comprising a group of features, (b) measuring a distribution of a transmission of each sub-area, (c) determining a deviation of the transmission from a mean transmission value for each sub-area, (d) determining a constant specific for each sub-area, and (e) determining the critical dimension variation of the photolithographic mask by combining for each sub-area the deviation of the transmission and the sub-area specific constant.

公开(公告)号：US07489386B2

公开(公告)日：2009-02-10

申请号：US11743870

申请日：2007-05-03

申请人： Frank-Michael Kamm ,  Rainer Pforr

发明人： Frank-Michael Kamm ,  Rainer Pforr

IPC分类号： G03B27/54 ,  G03B27/52

CPC分类号： G03F7/70308 ,  G03F7/70233

摘要： A system for projecting a pattern from a mask onto a substrate comprises a radiation source for emitting a light beam in the extreme ultraviolet wavelength range, a mask including absorbent and reflective structures forming the pattern, a collector mirror and an illumination optical system forming a first part of a beam path in order to direct the light beam onto the mask to produce a patterned light beam, a projection optical system including an arrangement of reflective mirrors forming a second part of the beam path in order to focus the reflected light beam from the mask onto the substrate, and an optical element arranged in the beam path and including at least two regions having different degrees of reflection or transmission. First and second of the regions are assigned to respective different first and second positions on the mask and/or collector mirror in accordance with the beam path.

摘要翻译： 用于将图案从掩模投影到基板上的系统包括用于发射极紫外波长范围内的光束的辐射源，包括吸收体的掩模和形成图案的反射结构，集光镜和照明光学系统，形成第一 光束路径的一部分，以将光束引导到掩模上以产生图案化的光束;投影光学系统，包括形成光束路径的第二部分的反射镜的布置，以便聚焦来自 掩模到基板上，以及布置在光束路径中并且包括具有不同反射或透射程度的至少两个区域的光学元件。 第一和第二区域根据光束路径被分配到掩模和/或收集器反射镜上的相应不同的第一和第二位置。

公开(公告)号：US20070263198A1

公开(公告)日：2007-11-15

申请号：US11743870

申请日：2007-05-03

申请人： Frank-Michael Kamm ,  Rainer Pforr

发明人： Frank-Michael Kamm ,  Rainer Pforr

IPC分类号： G03B27/54

CPC分类号： G03F7/70308 ,  G03F7/70233

摘要： A system for projecting a pattern from a mask onto a substrate comprises a radiation source for emitting a light beam in the extreme ultraviolet wavelength range, a mask including absorbent and reflective structures forming the pattern, a collector mirror and an illumination optical system forming a first part of a beam path in order to direct the light beam onto the mask to produce a patterned light beam, a projection optical system including an arrangement of reflective mirrors forming a second part of the beam path in order to focus the reflected light beam from the mask onto the substrate, and an optical element arranged in the beam path and including at least two regions having different degrees of reflection or transmission. First and second of the regions are assigned to respective different first and second positions on the mask and/or collector mirror in accordance with the beam path.

摘要翻译： 用于将图案从掩模投影到基板上的系统包括用于发射极紫外波长范围内的光束的辐射源，包括吸收体的掩模和形成图案的反射结构，集光镜和照明光学系统，形成第一 光束路径的一部分，以将光束引导到掩模上以产生图案化的光束;投影光学系统，包括形成光束路径的第二部分的反射镜的布置，以便聚焦来自 掩模到基板上，以及布置在光束路径中并且包括具有不同反射或透射程度的至少两个区域的光学元件。 第一和第二区域根据光束路径被分配到掩模和/或收集器反射镜上的相应不同的第一和第二位置。

公开(公告)号：US06838216B2

公开(公告)日：2005-01-04

申请号：US10438370

申请日：2003-05-14

申请人： Uwe Griesinger ,  Mario Hennig ,  Jürgen Knobloch ,  Rainer Pforr ,  Manuel Vorwerk

发明人： Uwe Griesinger ,  Mario Hennig ,  Jürgen Knobloch ,  Rainer Pforr ,  Manuel Vorwerk

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  H01L21/027 ,  G03F9/00 ,  G06F17/50

CPC分类号： G03F7/70441 ,  G03F1/29 ,  G03F7/70433

摘要： Auxiliary openings are assigned to openings on a mask to be transferred to a wafer. These auxiliary openings have a phase-shifting property, preferably between 160° and 200° with respect to the openings, and a cross section lying below the limiting dimension for the printing of the projection apparatus, so that the auxiliary openings themselves are not printed onto the wafer. However, the auxiliary openings do enhance the contrast of the aerial image, in particular of an associated, isolated or semi-isolated opening on the wafer. The auxiliary openings may have a distance from the opening that lies above the resolution limit of the projection apparatus but that is less than the coherence length of the light used for the projection. A phase-related utilization of the optical proximity effect results, which can produce elliptical structures from square openings on the mask when the auxiliary openings are disposed in the preferential direction.

公开(公告)号：US06692875B2

公开(公告)日：2004-02-17

申请号：US09839764

申请日：2001-04-20

申请人： Werner Fischer ,  Fritz Gans ,  Rainer Pforr ,  Jörg Thiele

发明人： Werner Fischer ,  Fritz Gans ,  Rainer Pforr ,  Jörg Thiele

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/30 ,  G03F1/36

摘要： A mask contains a transparent carrier material on which an opaque region is disposed as an image structure. Also disposed on the carrier material is a semitransparent dummy structure, which is spaced apart from all the image structures and differs from the image structure in terms of transparency and phase rotation. The smallest lateral extent of the dummy structure is then selected to be at least half as large as the smallest lateral extent of the image structure. The semitransparent dummy structure is formed in such a way that it is suitable for increasing the depth of focus of structures that stand individually or at least partially individually, in order thereby to improve the process window of the optical projection.

摘要翻译： 掩模包含作为图像结构设置有不透明区域的透明载体材料。 还设置在载体材料上的是半透明虚拟结构，其与所有图像结构间隔开，并且在透明度和相位旋转方面与图像结构不同。 然后将虚拟结构的最小横向范围选择为图像结构的最小横向范围的至少一半。 半透明虚拟结构形成为适于增加独立地或至少部分地单独地固定的结构的焦点深度，从而改善光学投影的处理窗口。

公开(公告)号：US06660437B2

公开(公告)日：2003-12-09

申请号：US10158733

申请日：2002-05-30

申请人： Christoph Friedrich ,  Uwe Griesinger ,  Michael Heissmeier ,  Burkhard Ludwig ,  Molela Moukara ,  Rainer Pforr

发明人： Christoph Friedrich ,  Uwe Griesinger ,  Michael Heissmeier ,  Burkhard Ludwig ,  Molela Moukara ,  Rainer Pforr

IPC分类号： G03F900

CPC分类号： G03F1/30

摘要： An alternating phase mask having a branched structure containing two opaque segments is described. Two transparent surface segments are disposed on both sides of the segments or the components thereof, respectively. The surface segments are provided with phases that are displaced by 180°±&Dgr; &agr;, whereby &Dgr; &agr; a is not more than 25°. The surface segments are separated by at least one transparent surface boundary segment whose phase is situated between the phases of the adjacent surface segments.

摘要翻译： 描述具有包含两个不透明段的分支结构的交替相位掩模。 两个透明表面片分别设置在片段的两侧或其部件上。 表面段设置有被偏移180°±Δα的相位，由此Δaa不大于25°。 表面段由相位位于相邻表面段的相位之间的至少一个透明表面边界段分开。

公开(公告)号：US06466373B1

公开(公告)日：2002-10-15

申请号：US09677321

申请日：2000-09-29

申请人： Rainer Pforr ,  Christoph Friedrich ,  Klaus Ergenzinger ,  Fritz Gans ,  Uwe Griesinger ,  Wilhelm Maurer ,  Jürgen Knobloch

发明人： Rainer Pforr ,  Christoph Friedrich ,  Klaus Ergenzinger ,  Fritz Gans ,  Uwe Griesinger ,  Wilhelm Maurer ,  Jürgen Knobloch

IPC分类号： G02B2700

CPC分类号： G03F1/29 ,  G03F1/32 ,  G03F1/34 ,  G03F1/70 ,  G03F7/2026 ,  G03F7/70466

摘要： For lithographically producing the smallest structures at less than the exposure wavelengths in semiconductor fabrication, a double exposure is carried out using a thick phase mask and a trimming mask, the trimming mask further structures the phase-contrast lines produced by the phase mask. Besides transparent or opaque regions, the trimming mask also has phase-shifting regions. These surround transparent regions of the trimming mask through which the phase-contrast lines produced by the first mask are locally re-exposed, that is to say interrupted. The intensity profile of successive line sections is especially rich in contrast through the addition of the phase-shifting partially transparent regions on the second mask; the distances between the line sections can be reduced. The trimming mask, otherwise used only for larger structures, is therefore suitable for the configuration of the finest dimensionally critical structures.

摘要翻译： 为了在半导体制造中以小于曝光波长的方式平版印刷产生最小结构，使用厚相位掩模和修剪掩模进行双重曝光，修整掩模进一步构成由相位掩模产生的相位对比线。 除了透明或不透明区域之外，修整掩模还具有相移区域。 这些环绕着修整掩模的透明区域，由第一掩模产生的相位对应线通过该区域被局部再暴露，也就是说被中断。 通过在第二掩模上添加相移部分透明区域，连续线段的强度分布特别丰富; 可以减少线路部分之间的距离。 因此，修剪面罩，否则仅用于较大的结构，因此适用于最精细的尺寸关键结构的构造。

公开(公告)号：US08871409B2

公开(公告)日：2014-10-28

申请号：US13810974

申请日：2011-07-25

申请人： Rainer Pforr ,  Guy Ben-Zvi ,  Vladimir Dmitriev ,  Erez Graitzer

发明人： Rainer Pforr ,  Guy Ben-Zvi ,  Vladimir Dmitriev ,  Erez Graitzer

IPC分类号： G03F1/00 ,  G03C5/00 ,  G03F7/00 ,  H01L21/66 ,  H01L21/68 ,  G03F1/38 ,  G03F1/44 ,  G03F7/20 ,  G06F17/50

CPC分类号： H01L22/12 ,  G03F1/38 ,  G03F1/44 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G06F17/50 ,  H01L21/68 ,  H01L21/681 ,  H01L21/682 ,  H01L22/20

摘要： A photo mask having a first set of patterns and a second set of patterns is provided in which the first set of patterns correspond to a circuit pattern to be fabricated on a wafer, and the second set of patterns have dimensions such that the second set of patterns do not contribute to the circuit pattern that is produced using a lithography process based on the first set of patterns under a first exposure condition. The critical dimension distribution of the photo mask is determined based on the second set of patterns that do not contribute to the circuit pattern produced using the lithography process based on the first set of patterns under the first exposure condition.

摘要翻译： 提供了具有第一组图案和第二组图案的光掩模，其中第一组图案对应于要在晶片上制造的电路图案，并且第二组图案具有尺寸，使得第二组图案 图案不利于在第一曝光条件下使用基于第一组图案的光刻工艺产生的电路图案。 基于在第一曝光条件下基于第一组图案的使用光刻处理产生的电路图案的第二组图案来确定光掩模的临界尺寸分布。