公开(公告)号：US20190108780A1

公开(公告)日：2019-04-11

申请号：US15774175

申请日：2017-10-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Song MENG ,  Quanhu LI

IPC: G09G3/20

Abstract: A Gamma-curve correction method for a display apparatus, and a display apparatus. The method includes: determining a standard Gamma curve according to the display apparatus; selecting a plurality of test gray scale values on the standard Gamma curve, and acquiring a plurality of target brightness values corresponding to the plurality of test gray scale values; adjusting an input gray scale value of the display apparatus to obtain a plurality of test-correction gray scale values, where the test-correction gray scale values are corresponding input gray scale values when display brightness of the display apparatus is equal to respective target brightness; generating an association relationship between input gray scale values and correction gray scale values, according to the plurality of test gray scale values and the plurality of test-correction gray scale values; and adjusting the input gray scale value to a corresponding correction gray scale value, according to the association relationship.

公开(公告)号：US20180366565A1

公开(公告)日：2018-12-20

申请号：US15736799

申请日：2017-07-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiangbo CHEN ,  Quanhu LI ,  Jingang FANG

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/443 ,  H01L21/4763 ,  H01L21/423 ,  H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L27/12 ,  H01L21/768 ,  H01L29/24

CPC classification number: H01L29/66969 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/423 ,  H01L21/443 ,  H01L21/465 ,  H01L21/47635 ,  H01L21/76802 ,  H01L21/76877 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/42372 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2227/323

Abstract: A thin film transistor, a method for fabricating the same, a display panel and a display device are disclosed. The method includes forming an active layer on a substrate; forming an insulating layer on the active layer and an exposed surface of the substrate; forming a first conductive layer on the insulating layer; patterning the first conductive layer and the insulating layer to form a first stack on the active layer, wherein the first stack includes a first portion of the first conductive layer and a first portion of the insulating layer, the first stack acts as a gate stack and the active layer includes a channel region below the gate stack and a source region and a drain region at two sides of the channel region; and performing plasma treatment on the first conductive layer, the source region and the drain region, to improve conductivity.

公开(公告)号：US20180261663A1

公开(公告)日：2018-09-13

申请号：US15570615

申请日：2017-05-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yongqian LI ,  Pan XU ,  Quanhu LI

IPC: H01L27/32 ,  G09G3/3225 ,  H01L51/52 ,  H01L51/50 ,  H01L51/56

CPC classification number: H01L27/3276 ,  G09G3/3225 ,  G09G3/3233 ,  G09G2300/0842 ,  G09G2320/0295 ,  G09G2320/0693 ,  H01L27/1244 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L51/5036 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/56

Abstract: An OLED array substrate and a manufacturing method thereof, an array substrate and a display device are provided. The OLED array substrate includes a wire; a plurality of pixel units, each of which includes an OLED light-emitting unit, a driving transistor and a storage capacitor; an insulation layer which covers the driving transistor, the storage capacitor and the wire; and a conductive layer, which is on the insulation layer and is configured to provide a common voltage to the plurality of the pixel units. At least one of the wire, the driving transistor and the storage capacitor is overlapped with the conductive layer in a direction perpendicular to the OLED array substrate.

公开(公告)号：US20170193906A1

公开(公告)日：2017-07-06

申请号：US15226702

申请日：2016-08-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yongqian LI ,  Yicheng LIN ,  Quanhu LI

IPC: G09G3/3258

CPC classification number: G09G3/3258 ,  G09G3/20 ,  G09G2300/0426 ,  G09G2310/08

Abstract: Disclosed is a pixel circuit which includes a multiplexing module and a plurality of sub-pixels. Signals for detecting parameters of respective sub-pixels are transferred via a sensing line in a time-divisional manner. For each sub-pixel, connection to the data line and the sensing line is achieved via a common terminal. Further disclosed are a display panel and a display device.

公开(公告)号：US20170033192A1

公开(公告)日：2017-02-02

申请号：US14913581

申请日：2015-07-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Longyan WANG ,  Yongqian LI ,  Kun CAO ,  Quanhu LI ,  Jingwen YIN ,  Baoxia ZHANG ,  Cuili GAI ,  Zhongyuan WU ,  Gang WANG

IPC: H01L29/45 ,  H01L29/22 ,  H01L29/20 ,  H01L29/786 ,  H01L21/4763 ,  H01L29/423 ,  H01L21/285 ,  H01L21/443 ,  H01L21/3213 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/45 ,  H01L21/28575 ,  H01L21/32134 ,  H01L21/443 ,  H01L21/47635 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66522 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78681 ,  H01L29/7869

Abstract: A thin film transistor, a manufacturing method thereof, and a display device are provided. The thin film transistor includes a gate electrode (21), an active layer (23), a source electrode (241) and a drain electrode (242). The source electrode (241) and the drain electrode (242) are formed of at least two materials, the forming materials of the source electrode (241) and the drain electrode (242) can create a cell reaction in a corresponding etching solution so as to be etched, and material of the active layer (23) is not corroded by the etching solution. With the thin film transistor and manufacturing method thereof according to embodiments of the invention, a problem that an active layer is liable to be corroded in an etching procedure of a source electrode and a drain electrode can be solved, and thus the thin film transistor device can be manufactured by using a back channel etch process. Consequently, the process number for manufacture of the thin film transistor is decreased, and the manufacturing cost is saved.

Abstract translation: 提供薄膜晶体管，其制造方法和显示装置。 薄膜晶体管包括栅电极（21），有源层（23），源电极（241）和漏电极（242）。 源极（241）和漏电极（242）由至少两种材料形成，源电极（241）和漏电极（242）的形成材料可以在相应的蚀刻溶液中产生电池反应，从而 被蚀刻，并且有源层（23）的材料不被蚀刻溶液腐蚀。 利用根据本发明的实施例的薄膜晶体管及其制造方法，可以解决在源电极和漏电极的蚀刻过程中有源层易于腐蚀的问题，因此薄膜晶体管器件 可以通过使用背沟道蚀刻工艺来制造。 因此，薄膜晶体管的制造工序减少，节省了制造成本。

公开(公告)号：US20160372031A1

公开(公告)日：2016-12-22

申请号：US14906369

申请日：2015-08-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Quanhu LI

IPC: G09G3/3225 ,  G11C19/28 ,  G09G3/3266

CPC classification number: G09G3/3225 ,  G09G3/3266 ,  G09G3/3677 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2310/061 ,  G09G2310/08 ,  G11C19/28

Abstract: A shift register unit, a method for driving the same and a gate scanning circuit are provided. The shift register unit comprises an input module for receiving a signal to be shifted, an output module, a reset module and a reset control module, an output terminal of the input module, a control terminal of the output module and an output terminal of the reset module are connected to a first node, an output terminal of the reset control module is connected with a control terminal of the reset module for turning on the reset module under control of control signal received by control terminal of the reset control module to reset the first node, the output module outputs a shifted signal with multiple pulses before the first node is reset. According to the present invention, a gate driving signal with multiple pulses can be outputted by one shift register unit.

Abstract translation: 提供了移位寄存器单元，其驱动方法和栅极扫描电路。 移位寄存器单元包括用于接收要移位的信号的输入模块，输出模块，复位模块和复位控制模块，输入模块的输出端子，输出模块的控制端子和输出模块的输出端子 复位模块连接到第一节点，复位控制模块的输出端子与复位模块的控制端连接，用于在由复位控制模块的控制端接收的控制信号的控制下接通复位模块，以复位 第一节点，输出模块在第一个节点复位之前输出具有多个脉冲的移位信号。 根据本发明，具有多个脉冲的栅极驱动信号可由一个移位寄存器单元输出。

公开(公告)号：US20200176604A1

公开(公告)日：2020-06-04

申请号：US16620663

申请日：2018-06-26

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Pan XU ,  Yicheng LIN ,  Cuili GAI ,  Baoxia ZHANG ,  Quanhu LI ,  Ling WANG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/417 ,  H01L29/66

Abstract: The present disclosure provides a thin film transistor, a method of fabricating the same, an array substrate and a display device. The thin film transistor includes: source and drain electrodes in a same layer arranged on a base substrate; an active layer on the base substrate and in contact with the source and drain electrodes; a gate insulating layer at a side of the active layer away from the base substrate; a gate electrode at a side of the gate insulating layer away from the base substrate. Orthographic projections of the gate electrode, the source electrode and the drain electrode on the base substrate do not overlap with one another, and a region of the active layer not covered by the gate electrode, the source electrode and the drain electrode and at a side of the active layer away from the base substrate is subjected to conductorization.

公开(公告)号：US20200005711A1

公开(公告)日：2020-01-02

申请号：US16555538

申请日：2019-08-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fei YANG ,  Song MENG ,  Hongjun XIE ,  Quanhu LI ,  Yue WU ,  Yu WANG

IPC: G09G3/3233

Abstract: A driving method for preventing image sticking of a display panel (805) upon shutdown, and a display device (800). The method includes: receiving a shutdown signal (S01, S16); and adjusting driving signals of a sub-pixel circuit (708, 810) of the display panel (805), so as to reduce the voltage difference between a gate electrode and a source electrode of a driving transistor (T1) of the sub-pixel circuit, and hence allowing the display panel (805) to enter an image sticking prevention mode (S02, S17). The method can prevent image sticking of the display panel (805) at the time of shutdown and hence improve the display quality.

公开(公告)号：US20190228696A1

公开(公告)日：2019-07-25

申请号：US15579432

申请日：2017-06-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yongqian LI ,  Pan XU ,  Quanhu LI

IPC: G09G3/20 ,  G09G3/22

Abstract: A pixel driving circuit and a driving method thereof, an array substrate and a display device are provided. The pixel driving circuit includes: a color data write unit, a luminance control unit, and a graphene light-emitting device. The graphene light-emitting device can emit light under the control of a color data signal and a luminance control signal. The driving method of a pixel driving circuit is conducted to drive the pixel driving circuit.

公开(公告)号：US20180358353A1

公开(公告)日：2018-12-13

申请号：US15736753

申请日：2017-05-15

Applicant: Boe Technology Group Co., Ltd.

Inventor： Cuili GAI ,  Longyan WANG ,  Ling WANG ,  Quanhu LI ,  Yi-cheng LIN

IPC: H01L27/02 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L49/02 ,  H01L21/768 ,  H01L29/788

CPC classification number: H01L27/0266 ,  H01L21/76877 ,  H01L21/77 ,  H01L27/02 ,  H01L27/0288 ,  H01L27/1255 ,  H01L28/40 ,  H01L29/66484 ,  H01L29/78648 ,  H01L29/788

Abstract: An electrostatic discharge device comprises a transistor with one of its source and drain serving as an input terminal of said device and the other serving as an output terminal. Said transistor comprises: a first conductive layer used as a first floating gate; a first insulating layer covering said first conductive layer; an active layer on said first insulating layer; a second insulating layer covering said active layer; a second conductive layer used as a second floating gate and on said second insulating layer; a third insulating layer covering said second conductive layer; a third conductive layer and a fourth conductive layer on said third insulating layer and on both sides of the active layer, said third conductive layer being isolated from the fourth conductive layer, wherein said third conductive layer serves as one of the source and the drain and said fourth conductive layer serves as the other.