公开(公告)号：US5087896A

公开(公告)日：1992-02-11

申请号：US641954

申请日：1991-01-16

申请人： Cheng P. Wen ,  Gregory S. Mendolia ,  Mario Siracusa ,  Joseph J. Maieron ,  William D. Higdon

发明人： Cheng P. Wen ,  Gregory S. Mendolia ,  Mario Siracusa ,  Joseph J. Maieron ,  William D. Higdon

IPC分类号： H03B1/00 ,  H03B5/18

CPC分类号： H03B5/1852 ,  H03B2200/0086 ,  H03B2201/011 ,  H03B2201/014 ,  H03B2201/02 ,  Y10T29/49004

摘要： A coplanar waveguide based microwave monolithic integrated circuit (MMIC) oscillator chip (14) having an active oscillator element (16) and a resonant capacitor (18) formed thereon is flip-chip mounted on a dielectric substrate (12). A resonant inductor (22) is formed on the substrate (12) and interconnected with the resonant capacitor (18) to form a high Q-factor resonant circuit for the oscillator (10). The resonant inductor (22) includes a shorted coplanar waveguide section (24) consisting of first and second ground strips (24b,24c), and a conductor strip (24a) extending between the first and second ground strips (24b,24c) in parallel relation thereto and being separated therefrom by first and second spaces (26a,26b) respectively. A shorting strip (24d) electrically interconnects adjacent ends of the conductor strip (24a) and first and second ground strips (24b,24c) respectively. A dielectric film (34) may be formed over at least adjacent portions of the conductor strip (24 a) and first and second ground strips (24b,24c). The resonant inductor (22) is adjusted to provide a predetermined resonant frequency for the oscillator (10) by using a laser (40) to remove part of the dielectric film (34) in the first and second spaces (26a,26b) for fine adjustment, and/or to remove part of the shorting strip (24d) at the ends of the first and second spaces (26a,26b) for coarse adjustment.

公开(公告)号：US4291320A

公开(公告)日：1981-09-22

申请号：US110965

申请日：1980-01-10

申请人： Cheng P. Wen ,  Reidar L. Kuvas ,  Anthony A. Immorlica, Jr.

发明人： Cheng P. Wen ,  Reidar L. Kuvas ,  Anthony A. Immorlica, Jr.

IPC分类号： H01L29/864 ,  H01L29/90 ,  H01L29/161

CPC分类号： H01L29/864

摘要： A double drift IMPATT diode is formed from two semiconductors having different band gaps and carrier mobilities. The avalanche portion of the diode is created in the semiconductor having the lower band gap. The electron drift portion is created in the semiconductor having the higher electron mobility and the hole drift portion is created in the semiconductor having the higher hole mobility. This decreases the voltage required across the avalanche portion, decreases the series resistance, and thus increases the efficiency of the diode.

摘要翻译： 双漂移IMPATT二极管由具有不同带隙和载流子迁移率的两个半导体形成。 在具有较低带隙的半导体中产生二极管的雪崩部分。 在具有较高电子迁移率的半导体中产生电子漂移部分，并且在具有较高空穴迁移率的半导体中产生空穴漂移部分。 这降低了雪崩部分所需的电压，降低了串联电阻，从而提高了二极管的效率。

公开(公告)号：US5572049A

公开(公告)日：1996-11-05

申请号：US422110

申请日：1995-04-14

申请人： Cheng P. Wen ,  Chan-Shin Wu ,  Cheng-Keng Pao ,  David B. Rensch ,  William E. Stanchina

发明人： Cheng P. Wen ,  Chan-Shin Wu ,  Cheng-Keng Pao ,  David B. Rensch ,  William E. Stanchina

IPC分类号： H01L29/08 ,  H01L29/737 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L29/7371 ,  H01L29/0821

摘要： A multi-layer collector heterojunction transistor (10) provides for high power, high efficiency transistor amplifier operation, especially in the RF (radio frequency) range of operation. A larger band gap first collector layer (12), approximately 15% of the active collector region (11) thickness, is provided at the base-collector junction (13). A smaller band gap second collector layer (14) forms the remainder of the active collector region (11). The multi-layer collector structure provides higher reverse bias breakdown voltage and higher carrier mobility during relevant portions of the output signal swing. A lower saturation voltage limit, or "knee" voltage, is provided at the operating points where linear operating regions transition to saturation operating regions as depicted in the output voltage-current (I-V) characteristic curves. The magnitude of the output signal swing of an amplifier may be increased, providing higher power amplification with greater power efficiency. The power supply voltage for the amplifier may be increased, providing for the use of a smaller, lighter power supply.

摘要翻译： 多层收集器异质结晶体管（10）提供高功率，高效率的晶体管放大器操作，特别是在RF（射频）操作范围内。 在基极 - 集电极结（13）处提供大约15％的有源集电极区域（11）厚度的较大的带隙第一集电极层（12）。 较小的带隙第二集电极层（14）形成有源集电极区域（11）的剩余部分。 多层收集器结构在输出信号摆幅的相关部分期间提供更高的反向偏压击穿电压和较高的载流子迁移率。 在输出电压 - 电流（I-V）特性曲线中描绘的线性工作区域转变到饱和工作区域的工作点处，提供较低的饱和电压限制或“拐点”电压。 可以增加放大器的输出信号摆幅的大小，以更高的功率效率提供更高的功率放大。 可以增加放大器的电源电压，从而提供更小，更轻的电源的使用。

公开(公告)号：US5553395A

公开(公告)日：1996-09-10

申请号：US455879

申请日：1995-05-31

申请人： Cheng P. Wen ,  Randy K. Rolph ,  Timothy T. Zielinski

发明人： Cheng P. Wen ,  Randy K. Rolph ,  Timothy T. Zielinski

IPC分类号： C23C16/448 ,  F26B3/08 ,  F26B17/00

CPC分类号： C23C16/4481

摘要： A cone-shaped bubbler for use with solid metal organic source material used in metal organic chemical vapor phase deposition systems, and a method of producing carrying gas saturated with source material that is injected into such systems. The bubbler comprises a sealed container having a slanted wall with an inverted cone-shaped cross section. Solid metal organic source material is disposed in the container. A heat bath surrounds the sealed container. A carrying gas inlet is disposed adjacent the top of the container. Carrying gas is injected in a tangential direction relative to the source material, and a whirlpool effect is generated by the tangential gas flow that imparts a centrifugal force to gas molecules, pushing the source material against the wall to promote heat flow from the heat bath to sustain high rate sublimation. A gas outlet is disposed adjacent the bottom of the container. Once source material lining the slanted inner wall is removed, gravitational forces cause source material to refill the empty space, reducing channel formation and preventing thermal isolation of the source material at the center of the bubbler. The method comprises providing a sealed container with a slanted wall having an inverted cone-shaped cross section, disposing solid metal organic source material in the container, heating the sealed container, injecting a carrying gas adjacent the top of the container so that carrying gas is injected in a tangential direction relative to the solid source material, and removing saturated carrying gas from a gas outlet disposed adjacent the bottom of the container.

摘要翻译： 一种用于金属有机化学气相沉积系统中使用的固体金属有机源材料的锥形起泡器，以及一种生产被注入到这种系统中的源材料饱和的携带气体的方法。 起泡器包括具有倒锥形横截面的倾斜壁的密封容器。 固体金属有机源材料设置在容器中。 热水浴围绕密封容器。 携带气体入口邻近容器的顶部设置。 携带气体相对于源材料沿切线方向注入，并且通过向气体分子施加离心力的切向气流产生漩涡效应，将源材料推向壁以促进从热浴到热量的流动 维持高速升华 气体出口邻近容器的底部设置。 一旦去除了倾斜的内壁衬里的源材料，重力就会使源材料重新填充空的空间，减少通道的形成并防止源材料在起泡器中心的热隔离。 该方法包括提供具有倒锥形横截面的倾斜壁的密封容器，将固体金属有机源材料放置在容器中，加热密封容器，在靠近容器顶部注入携带气体，使携带气体为 相对于固体源材料沿切线方向注入，并且从邻近容器底部设置的气体出口除去饱和的携带气体。

公开(公告)号：US5546049A

公开(公告)日：1996-08-13

申请号：US414829

申请日：1995-03-31

申请人： Cheng P. Wen ,  Cheng-Keng Pao

发明人： Cheng P. Wen ,  Cheng-Keng Pao

IPC分类号： H01L23/66 ,  H03H11/28 ,  H03F3/193

CPC分类号： H03F1/56 ,  H01L23/66 ,  H03H11/28 ,  H01L2223/6644 ,  H01L2924/0002 ,  H01L2924/3011 ,  H03F2200/456

摘要： A relatively high power active gain device, such as MESFET or similar transistor, has distributed impedance characteristics at relatively high RF (microwave) frequencies of operation due to physical device size limitations. A transmission line segment (104) is placed in relatively close spacial relationship and is coupled in parallel electrical relationship with the input port (162) of the high power active device. This provides for highly simplified design of an impedance prematched amplifier (100) over a relatively broad range of predetermined input signal center frequencies. An active device (102) is provided based on power requirements and is characterized over a range of center frequencies and device sizes independently from the characterization of the transmission line segment (104) over a range of center frequencies and segment lengths, since the impedance characteristics of the active device (102) and the transmission line (104) are not dependent upon each other. Based on a predetermined operating center frequency and on the input source impedance characteristics, an appropriate pre-characterized transmission line segment (104) is paired with an appropriate pre-characterized active device (102) based on a simplified model for the prematched amplifier (100). Characterization procedures are therefore simplified and relatively inexpensive. The design cycle for a prematched amplifier is considerably simplified, shortened, and reduced in cost.

摘要翻译： 相对高功率的有源增益器件，例如MESFET或类似晶体管，由于物理器件尺寸的限制，在相对较高的RF（微波）工作频率下具有分布阻抗特性。 传输线段（104）以相对较小的空间关系放置，并且与大功率有源器件的输入端口（162）并联电连接。 这提供了在相对宽的预定输入信号中心频率范围上的阻抗预匹配放大器（100）的高度简化的设计。 基于功率要求提供有源器件（102），并且在一定范围的中心频率和器件尺寸上表征，独立于传输线段（104）在中心频率和段长度的范围上的表征，因为阻抗特性 有源装置（102）和传输线（104）之间不依赖于彼此。 基于预定的操作中心频率和输入源阻抗特性，基于用于预匹配放大器（100）的简化模型，适当的预先表征的传输线段（104）与适当的预先表征的有源器件（102）配对 ）。 因此，特征化程序被简化并且相对便宜。 前置放大器的设计周期大大简化，缩短并降低成本。

公开(公告)号：US5406122A

公开(公告)日：1995-04-11

申请号：US143797

申请日：1993-10-27

申请人： Wah-Sang Wong ,  William D. Gray ,  Cheng P. Wen

发明人： Wah-Sang Wong ,  William D. Gray ,  Cheng P. Wen

IPC分类号： H01L23/485 ,  H01L23/532 ,  H01L23/48 ,  H01L29/46

CPC分类号： H01L23/53252 ,  H01L23/53242 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/11 ,  H01L2224/1147 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/15787 ,  H01L2924/19041

摘要： A gallium arsenide Monolithic-Microwave-Integrated-Circuit (MMIC) flip chip or other microelectronic circuit structure (10) includes a plated gold bridge (28) which serves as metal interconnect crossover between sites (24,-26) on a substrate (12). A first inorganic dielectric passivation layer (16), preferably of silicon dioxide, is formed under and supports the bridge (28). A second inorganic dielectric passivation layer (30), also preferably of silicon dioxide, is formed over and encapsulates the bridge (28) and the chip surface. A titanium/gold/titanium membrane (22) is formed under the bridge (28) to enable adhesion of the bridge (28) to the first passivation layer (16) and form plating contacts for the bridge (28). A contact bump post (38) is formed in a bump hole or via (32) which extends through the first and second passivation layers (16,30) to a bump contact site (34) on the substrate (12). Another titanium/gold/titanium membrane (40) is formed on the bump post (38) and the wall of the bump via (32) to provide a plating contact for a bump (42) which is plated on the membrane (40) inside the bump via (32) where the bump post (38) is located.

摘要翻译： 砷化镓单片微波集成电路（MMIC）倒装芯片或其他微电子电路结构（10）包括镀金金桥（28），其作为在基板（12）上的位置（24,26）之间的金属互连交叉 ）。 第一无机介电钝化层（16），优选二氧化硅，形成在桥下（28）并支撑桥（28）。 在桥（28）和芯片表面上形成第二无机介电钝化层（30），也优选二氧化硅。 在桥（28）下形成钛/金/钛膜（22），以使得桥（28）能够与第一钝化层（16）粘合并形成桥（28）的电镀接触。 触点凸点（38）形成在凸起孔中，或者通过（32）延伸穿过第一和第二钝化层（16,30）到基底（12）上的凸块接触部位（34）。 在凸点（38）和凸块通孔（32）的壁上形成另一个钛/金/钛膜（40），以提供用于凸块（42）的电镀接触，该电镀接触电镀在膜（40）内部 凸起柱（38）所在的凸块通孔（32）。

公开(公告)号：US5352904A

公开(公告)日：1994-10-04

申请号：US792502

申请日：1991-11-21

申请人： Cheng P. Wen ,  Chan-Shin Wu

发明人： Cheng P. Wen ,  Chan-Shin Wu

IPC分类号： H01L31/0352 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L31/035236 ,  B82Y20/00

摘要： A multiple quantum well (MQW) radiation sensor eliminates tunneling current from the photoactivated current that provides an indication of incident radiation, and yet preserves a substantial bias voltage across the superlattice, by fabricating an intermediate contact layer between the superlattice and a tunneling blocking layer. Using the intermediate contact layer to apply a bias voltage across the superlattice but not the blocking layer, the photoexcited current flow through the intermediate contact and blocking layers is taken as an indication of the incident radiation. The width of the intermediate contact layer and the barrier energy height of the blocking layer relative to that of the superlattice barrier layers are selected to enable a substantial photoexcited current flow across the blocking layer. The thickness of the intermediate contact layer is preferably not more than about 1 photoexcited charge carrier mean-free path length, while the blocking layer's barrier energy height is preferably at least about 1 phonon energy level below that of the superlattice barrier layers.

摘要翻译： 多量子阱（MQW）辐射传感器消除了提供入射辐射指示的光活化电流的隧道电流，并且通过在超晶格和隧道阻挡层之间制造中间接触层，保持超晶格上的实质偏压。 使用中间接触层在超晶格上施加偏置电压而不是阻挡层，通过中间接触和阻挡层的光电流流动被作为入射辐射的指示。 选择中间接触层的宽度和阻挡层相对于超晶格势垒层的阻挡能量高度，以使能够穿过阻挡层的实质的光电流流动。 中间接触层的厚度优选为不大于约1个光激发电荷载体平均自由路径长度，而阻挡层的势垒能高度优选为低于超晶格势垒层的能级的至少约1个声子能级。

公开(公告)号：US5274342A

公开(公告)日：1993-12-28

申请号：US843344

申请日：1992-02-28

申请人： Cheng P. Wen ,  Chan S. Wu ,  Cheng K. Pao

发明人： Cheng P. Wen ,  Chan S. Wu ,  Cheng K. Pao

IPC分类号： H03F1/22 ,  H03F3/60 ,  H03F3/68

CPC分类号： H03F1/22 ,  H03F3/605

摘要： A microwave monolithic integrated circuit (MMIC) (40), includes a substrate (60), and an input bus (62), output bus (64), ground bus (66) and bias bus (68) formed as striplines of a four-line coplanar waveguide on the substrate (60) with the input bus (62) and output bus (64) disposed between the ground bus (66) and bias bus (68). A plurality of spatially distributed cascode amplifier units (43) are formed on the substrate (60), each including an input heterojunction bipolar transistor (HBT) (42) connected in a common-emitter configuration, and an output HBT (44) connected in a common-base configuration. The input HBT (42) has an emitter (E.sub.1) connected to the ground bus (66), a base (B.sub.1) connected to the input bus (62) and a collector (C.sub.1). The output HBT (44) has an emitter (E.sub.2) connected to the collector (C.sub.1) of the input HBT (42), a base (B.sub.2) connected to the bias bus (68) and a collector (C.sub.2) connected to the output bus (64). The distributed amplifier arrangement enables the HBTs (42,44) to operate with balanced electrical parameters and high thermal isolation and heat dissipation.

摘要翻译： 一种微波单片集成电路（MMIC）（40），包括基板（60）和输入总线（62），输出总线（64），接地总线（66）和偏置总线（68），其形成为四线 具有输入总线（62）和布置在接地总线（66）和偏置总线（68）之间的输出总线（64）的衬底（60）上的直线共面波导。 多个空间分布的共源共栅放大器单元（43）形成在衬底（60）上，每个包括以共发射极配置连接的输入异质结双极晶体管（HBT）（42）和连接在其中的输出HBT（44） 共同基础配置。 输入HBT（42）具有连接到接地总线（66）的发射极（E1），连接到输入总线（62）的基极（B1）和集电极（C1）。 输出HBT（44）具有连接到输入HBT（42）的集电极（C1）的发射极（E2），连接到偏置总线（68）的基极（B2）和连接到输出端 公共汽车（64）。 分布式放大器布置使得HBT（42,44）能够平衡的电气参数和高热隔离和散热。

公开(公告)号：US5039891A

公开(公告)日：1991-08-13

申请号：US453876

申请日：1989-12-20

申请人： Cheng P. Wen ,  Wing Yau

发明人： Cheng P. Wen ,  Wing Yau

IPC分类号： H03D7/12 ,  H03D7/14 ,  H03H11/32

CPC分类号： H03D7/1441 ,  H03D7/125 ,  H03D7/1466 ,  H03H11/32 ,  H03D2200/0023 ,  H03D2200/0084

摘要： Three active FET baluns, using resonant, reactive and resistive/reactive compensation are disclosed suitable for monolithic implementation. A single balanced mixer configuration including a resistive/reactive active FET balun coupled with a pair of single ended FET mixers in a push pull configuration is disclosed which is also suitable for monolithic implementation.

摘要翻译： 公开了使用谐振，无功和电阻/无功补偿的三个有源FET巴伦适用于单片实现。 公开了一种单平衡混频器配置，其包括与推拉配置中的一对单端FET混频器耦合的电阻/反应式有源FET平衡 - 不平衡变换器，其也适用于单片实现。

公开(公告)号：US4931799A

公开(公告)日：1990-06-05

申请号：US342850

申请日：1989-04-24

申请人： Cheng P. Wen ,  Richard T. Hennegan

发明人： Cheng P. Wen ,  Richard T. Hennegan

IPC分类号： G01S7/02 ,  G01S7/03 ,  G01S13/34 ,  H01Q1/24 ,  H01Q9/04 ,  H01Q21/06 ,  H01Q21/24

CPC分类号： G01S7/032 ,  G01S7/026 ,  H01Q1/247 ,  H01Q21/065 ,  H01Q21/24 ,  H01Q9/0435

摘要： A field effect transistor FMCW radar transceiver for short-range target detection, employs a varactor-tuned, gallium arsenide field effect transistor, voltage-controlled oscillator in the dual role of the transmitter signal source and the local oscillator. The radar transceiver is capable of operating at low IF frequencies for short range, which can be less than 30 feet, target detection.

摘要翻译： 用于短距离目标检测的场效应晶体管FMCW雷达收发器，采用变容二极管调谐，砷化镓场效应晶体管，压控振荡器在发射机信号源和本地振荡器的双重作用。 雷达收发器能够在短距离的低IF频率下运行，其可以小于30英尺，目标检测。