公开(公告)号：US20110177678A1

公开(公告)日：2011-07-21

申请号：US12889472

申请日：2010-09-24

申请人： Akihito Ohno ,  Masayoshi Takemi ,  Takahiro Yamamoto

发明人： Akihito Ohno ,  Masayoshi Takemi ,  Takahiro Yamamoto

IPC分类号： H01L21/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0075 ,  H01S5/22 ,  H01S5/3086 ,  H01S5/3201 ,  H01S2304/04

摘要： A method for manufacturing a nitride semiconductor device includes forming an n-type nitride-based semiconductor layer on a substrate; forming an active layer of a nitride-based semiconductors including In on the n-type nitride-based semiconductor layer using ammonia and a hydrazine derivative as group-V element source materials and a carrier gas including hydrogen; and forming a p-type nitride-based semiconductor layer on the active layer using ammonia and a hydrazine derivative as group-V element source materials.

摘要翻译： 一种氮化物半导体器件的制造方法包括：在基板上形成n型氮化物系半导体层; 使用氨和肼衍生物作为V族元素源材料和包含氢的载气在n型氮化物基半导体层上形成包括In的氮化物类半导体的有源层; 并使用氨和肼衍生物作为V族元素源材料在活性层上形成p型氮化物基半导体层。

公开(公告)号：US07825012B2

公开(公告)日：2010-11-02

申请号：US12501511

申请日：2009-07-13

申请人： Akihito Ohno ,  Masayoshi Takemi

发明人： Akihito Ohno ,  Masayoshi Takemi

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/00

CPC分类号： H01L21/0262 ,  C30B25/165 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01S5/32341

摘要： A method for manufacturing a nitride semiconductor device, includes forming a p-type nitride semiconductor layer on a substrate, from an organic metal compound as a group III element source material, ammonia and a hydrazine derivative as group V element source materials, and a Mg source material gas as a p-type impurity source material. The flow velocity of the source material gases including the group III element source material, the group V element source materials, and the p-type impurity source material is more than 0.2 m/sec.

摘要翻译： 一种氮化物半导体器件的制造方法，包括在作为第III族元素源材料的有机金属化合物，氨和肼衍生物作为V族元素源材料的基板上形成p型氮化物半导体层，以及Mg 源材料气体作为p型杂质源材料。 包括III族元素源材料，V族元素源材料和p型杂质源材料的源材料气体的流速大于0.2m / sec。

公开(公告)号：US20100075483A1

公开(公告)日：2010-03-25

申请号：US12501511

申请日：2009-07-13

申请人： Akihito Ohno ,  Masayoshi Takemi

发明人： Akihito Ohno ,  Masayoshi Takemi

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  C30B25/165 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01S5/32341

摘要： A method for manufacturing a nitride semiconductor device, includes forming a p-type nitride semiconductor layer on a substrate, from an organic metal compound as a group III element source material, ammonia and a hydrazine derivative as group V element source materials, and a Mg source material gas as a p-type impurity source material. The flow velocity of the source material gases including the group III element source material, the group V element source materials, and the p-type impurity source material is more than 0.2 m/sec.

摘要翻译： 一种氮化物半导体器件的制造方法，包括在作为第III族元素源材料的有机金属化合物，氨和肼衍生物作为V族元素源材料的基板上形成p型氮化物半导体层，以及Mg 源材料气体作为p型杂质源材料。 包括III族元素源材料，V族元素源材料和p型杂质源材料的源材料气体的流速大于0.2m / sec。

公开(公告)号：US20090236589A1

公开(公告)日：2009-09-24

申请号：US12404647

申请日：2009-03-16

申请人： Akihito Ohno ,  Masayoshi Takemi ,  Nobuyuki Tomita

发明人： Akihito Ohno ,  Masayoshi Takemi ,  Nobuyuki Tomita

IPC分类号： H01L51/30 ,  H01L51/40

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01S5/2201 ,  H01S5/3054 ,  H01S5/3063 ,  H01S2304/04

摘要： A nitride semiconductor laminated structure comprises: a substrate; a first p-type nitride semiconductor layer formed using an organometallic compound as a Group III element source material, a p-type impurity source material and ammonia as a Group V element source material, with the hydrogen concentration in the first p-type nitride semiconductor layer being 1×1019 cm−3 or less; and a second p-type nitride semiconductor layer on the first p-type nitride semiconductor layer by formed using an organometallic compound as a Group III element source material, a p-type impurity source material, and ammonia and a hydrazine derivatives as Group V element source materials, with the carbon concentration in the second p-type nitride semiconductor layer being 1×1018 cm−3 or less.

摘要翻译： 氮化物半导体层叠结构包括：基板; 使用有机金属化合物作为III族元素源材料形成的第一p型氮化物半导体层，p型杂质源材料和作为V族元素源的氨，第一p型氮化物半导体中的氢浓度 层为1×10 19 cm -3以下; 以及通过使用有机金属化合物作为III族元素源材料，p型杂质源材料和氨以及作为V族元素的肼衍生物形成的第一p型氮化物半导体层上的第二p型氮化物半导体层 源材料，第二p型氮化物半导体层中的碳浓度为1×10 18 cm -3以下。

公开(公告)号：US07172429B2

公开(公告)日：2007-02-06

申请号：US11326509

申请日：2006-01-06

申请人： Nobuyuki Tomita ,  Masayoshi Takemi ,  Akihito Ohno

发明人： Nobuyuki Tomita ,  Masayoshi Takemi ,  Akihito Ohno

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3213 ,  H01S2304/04

摘要： The present invention provides a semiconductor light emitting device where a spatial change in an In composition ratio is small within a plane of an active layer and device properties such as efficiency of light emission are excellent, and a manufacturing method thereof. An active layer having an InGaN quantum well structure is formed in such a manner that a ratio of a photoluminescence light emission intensity at 300 K to a photoluminescence light emission intensity at 5 K becomes 0.1 or less. The ratio of the photoluminescence light emission intensity reflects the degree of the spatial change in an In composition ratio in a quantum confined structure. In addition, a smaller value indicates a higher spatial uniformity in the In composition ratio. Therefore, there is greater spatial uniformity in the In composition ratio in the active layer, increasing the probability of radiative recombination of carriers occurring, by making the ratio of photoluminescence light emission intensity 0.1 or less; thus, it becomes possible to obtain a semiconductor light emitting device having high efficiency in light emission.

摘要翻译： 本发明提供一种半导体发光器件，其中In组成比的空间变化在有源层的平面内较小，并且诸如发光效率的器件性能优异，及其制造方法。 形成具有InGaN量子阱结构的有源层，使得在300K下的光致发光发光强度与5K的光致发光发光强度的比例为0.1以下。 光致发光强度的比率反映了量子限制结构中In组成比的空间变化程度。 另外，较小的值表示In组成比中较高的空间均匀性。 因此，有源层的In组成比有更大的空间均匀性，通过使光致发光发光强度的比例为0.1以下，增加载体发生辐射复合的可能性; 因此，可以获得具有高发光效率的半导体发光器件。

公开(公告)号：US20060166392A1

公开(公告)日：2006-07-27

申请号：US11326509

申请日：2006-01-06

申请人： Nobuyuki Tomita ,  Masayoshi Takemi ,  Akihito Ohno

发明人： Nobuyuki Tomita ,  Masayoshi Takemi ,  Akihito Ohno

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3213 ,  H01S2304/04

摘要： The present invention provides a semiconductor light emitting device where a spatial change in an In composition ratio is small within a plane of an active layer and device properties such as efficiency of light emission are excellent, and a manufacturing method thereof. An active layer having an InGaN quantum well structure is formed in such a manner that a ratio of a photoluminescence light emission intensity at 300 K to a photoluminescence light emission intensity at 5 K becomes 0.1 or less. The ratio of the photoluminescence light emission intensity reflects the degree of the spatial change in an In composition ratio in a quantum confined structure. In addition, a smaller value indicates a higher spatial uniformity in the In composition ratio. Therefore, there is greater spatial uniformity in the In composition ratio in the active layer, increasing the probability of radiative recombination of carriers occurring, by making the ratio of photoluminescence light emission intensity 0.1 or less; thus, it becomes possible to obtain a semiconductor light emitting device having high efficiency in light emission.

摘要翻译： 本发明提供一种半导体发光器件，其中In组成比的空间变化在有源层的平面内较小，并且诸如发光效率的器件性能优异，及其制造方法。 形成具有InGaN量子阱结构的有源层，使得在300K下的光致发光发光强度与5K的光致发光发光强度的比例为0.1以下。 光致发光强度的比率反映了量子限制结构中In组成比的空间变化程度。 另外，较小的值表示In组成比中较高的空间均匀性。 因此，有源层的In组成比有更大的空间均匀性，通过使光致发光发光强度的比例为0.1以下，增加载体发生辐射复合的可能性; 因此，可以获得具有高发光效率的半导体发光器件。

公开(公告)号：US20060091421A1

公开(公告)日：2006-05-04

申请号：US11175379

申请日：2005-07-07

申请人： Kenichi Ono ,  Masayoshi Takemi

发明人： Kenichi Ono ,  Masayoshi Takemi

IPC分类号： H01L31/109

CPC分类号： H01S5/305 ,  B82Y20/00 ,  H01S5/162 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34326 ,  H01S5/3436

摘要： A semiconductor laser device according to the present invention comprises: an n-band discontinuity reduction layer (n-BDR layer) disposed on an n-GaAs substrate and the n-BDR layer including an AlGaAs layer whose concentration of Si doped as an n-type impurity is in a range from 0.2×1018 cm−3 to 1.4×1018 cm−3; an n-type cladding layer of AlGaInP disposed on the n-BDR layer; an active layer including a quantum well disposed on the n-type cladding layer; and a p-type cladding layer of AlGaInP disposed on the active layer.

摘要翻译： 根据本发明的半导体激光器件包括：设置在n-GaAs衬底上的n波段不连续性还原层（n-BDR层），以及n-BDR层，其包含掺杂为n-Si衬底的Si的浓度的AlGaAs层， 类型杂质在0.2×10 30 -3 -3至1.4×10 18 cm -3范围内; 设置在n-BDR层上的AlGaInP的n型包覆层; 包括在n型包覆层上设置的量子阱的有源层; 以及设置在有源层上的AlGaInP的p型覆层。

公开(公告)号：US5782979A

公开(公告)日：1998-07-21

申请号：US489773

申请日：1995-06-13

申请人： Nobuaki Kaneno ,  Hirotaka Kizuki ,  Masayoshi Takemi ,  Kenzo Mori

发明人： Nobuaki Kaneno ,  Hirotaka Kizuki ,  Masayoshi Takemi ,  Kenzo Mori

IPC分类号： H01L21/205 ,  C23C16/30 ,  C23C16/458 ,  C30B25/02 ,  C30B25/12 ,  H01L21/683 ,  H01S5/00 ,  C23C16/00

CPC分类号： C30B25/02 ,  C23C16/301 ,  C23C16/4581 ,  C30B25/12 ,  C30B29/40

摘要： A substrate holder employed for MOCVD and supporting a wafer on which crystal growth proceeds includes a molybdenum holder body, a GaAs polycrystalline film with a flat surface grown on a part of the surface of the molybdenum holder body where the wafer is absent, and an InP polycrystalline film grown on the GaAs polycrystalline film. Each of the polycrystalline films is grown to a thickness of 0.3 .mu.m or more at a temperature higher than the epitaxial growth temperature of 575.degree. C. During the MOCVD process, the emissivity of the molybdenum substrate holder is stable at a value near the emissivity of the wafer on the substrate holder and, therefore, the decomposition ratio of PH.sub.3 gas on the substrate holder is stable at a value near the decomposition ratio on the wafer, whereby any variation of the incorporation ratio of P atoms in the grown InGaAsP, i.e., a variation of the composition of the InGaAsP, is reduced and run-to-run variations of the composition of the grown crystal are reduced.

摘要翻译： 用于MOCVD并支撑晶体生长所进行的晶片的衬底保持器包括钼保持器主体，在不存在晶片的钼保持器主体的表面的一部分上生长的具有平坦表面的GaAs多晶膜，以及InP 在GaAs多晶膜上生长的多晶膜。 在比575℃的外延生长温度高的温度下，将多晶膜生长至0.3μm以上的厚度。在MOCVD工艺中，钼基板保持器的发射率在发射率附近稳定 因此衬底保持器上的PH3气体的分解比例在晶片分解比附近稳定，因此生长的InGaAsP中P原子的掺入比例，即 ，InGaAsP的组成的变化减小，并且生长晶体的组成的运行变化减小。

公开(公告)号：US07763486B2

公开(公告)日：2010-07-27

申请号：US11950494

申请日：2007-12-05

申请人： Akihito Ohno ,  Masayoshi Takemi ,  Nobuyuki Tomita

发明人： Akihito Ohno ,  Masayoshi Takemi ,  Nobuyuki Tomita

IPC分类号： H01L33/02

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/325 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/3054 ,  H01S5/34333 ,  H01S2304/04

摘要： A nitride semiconductor stacked structure having good working efficiency includes a p-type nitride semiconductor layer of low resistance, which is formed from an organometallic compound, compounds including Group V elements, including ammonia and a hydrazine derivative, and a p-type impurity material on a substrate. The p-type nitride layer has a carbon concentration not higher than 1×1018 cm−3.

摘要翻译： 具有良好工作效率的氮化物半导体层叠结构包括由有机金属化合物形成的低电阻p型氮化物半导体层，包括氨和肼衍生物的V族元素和p型杂质材料 底物。 p型氮化物层的碳浓度不高于1×1018cm-3。

公开(公告)号：US07632695B2

公开(公告)日：2009-12-15

申请号：US11941195

申请日：2007-11-16

申请人： Akihito Ohno ,  Masayoshi Takemi ,  Nobuyuki Tomita

发明人： Akihito Ohno ,  Masayoshi Takemi ,  Nobuyuki Tomita

IPC分类号： H01L21/00

CPC分类号： H01S5/2231 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/34333 ,  H01S2304/04

摘要： A technique is provided which enables formation of nitride semiconductor layers with excellent flatness and excellent crystallinity on a gallium nitride substrate (GaN substrate), while improving the producibility of the semiconductor device using the GaN substrate. A gallium nitride substrate is prepared which has an upper surface having an off-angle of not less than 0.1° nor more than 1.0° in a direction, with respect to a (0001) plane. Then, a plurality of nitride semiconductor layers including an n-type semiconductor layer are stacked on the upper surface of the gallium nitride substrate to form a semiconductor device such as a semiconductor laser.

摘要翻译： 提供了一种能够在氮化镓衬底（GaN衬底）上形成具有优异的平坦度和优异的结晶度的氮化物半导体层的技术，同时提高了使用GaN衬底的半导体器件的可制造性。 制备氮化镓衬底，其具有相对于（0001）面在<1-100>方向上具有不小于0.1°且不大于1.0°的偏角的上表面。 然后，在氮化镓衬底的上表面上堆叠包括n型半导体层的多个氮化物半导体层，以形成诸如半导体激光器的半导体器件。