公开(公告)号：US20240213401A1

公开(公告)日：2024-06-27

申请号：US18085672

申请日：2022-12-21

Applicant: CreeLED, Inc.

Inventor： David Suich ,  Michael Check ,  Colin Blakely ,  Robert Wilcox ,  Andre Pertuit

IPC: H01L33/00 ,  H01L21/304 ,  H01L21/324

CPC classification number: H01L33/0095 ,  H01L21/304 ,  H01L21/3247 ,  H01L2933/0058

Abstract: The present disclosure relates to solid-state lighting devices including light-emitting diodes (LEDs) and more particularly to light-extraction features for LED chips and packages and methods of forming the light-extraction features on a cover structure over the LED chip to improve light extraction from the LED chip. A number of sublayers that are embedded with lumiphoric materials can be pressed in a mold that includes texturing that imprints the light-extraction features in the sublayers. The sublayers can then be baked to form a cover structure that can be placed over the LED chip. In other embodiments, the sublayers can be baked to form the cover structure, which can then be heated to above a transition temperature of the cover structure, then pressed in a textured mold to form the light-extraction features, and then placed over the LED chip.

公开(公告)号：US20230402310A1

公开(公告)日：2023-12-14

申请号：US17806166

申请日：2022-06-09

Applicant: CreeLED, Inc.

Inventor： Colin Blakely ,  Michael Check ,  Robert Wilcox ,  David Suich ,  Joseph G. Sokol ,  Andre Pertuit

IPC: H01L21/683 ,  H01L25/075 ,  H01L33/62

CPC classification number: H01L21/6835 ,  H01L25/0753 ,  H01L33/62 ,  H01L2221/68309 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2933/0066

Abstract: Methods and related systems for transfer of semiconductor die and more particularly for mass transfer of semiconductor die, such as light-emitting diodes, using transfer elements are disclosed. Certain aspects relate to methods of continuous mass transfer using roller feed loops. Two carrier bars move in opposite directions, one with die and one with a substrate. The die stick to a roller and transfer from a die carrier to the substrate on a substrate carrier. In certain aspects, transfer elements may include rollers, flexible rollers, or expandable rollers. Transfer elements may further include alignment features, such as alignment pockets, that provide enhanced die alignment. In certain aspects, transfer elements may include one or more planar surfaces that rotate positions relative to the die carrier and the substrate carrier.

公开(公告)号：US11837684B2

公开(公告)日：2023-12-05

申请号：US16690707

申请日：2019-11-21

Applicant: CreeLED, Inc.

Inventor： David Suich ,  Daniel E. Stasiw ,  Samuel Richard Harrell, Jr.

IPC: H01L33/48 ,  H01L33/50 ,  H01L33/62

CPC classification number: H01L33/486 ,  H01L33/505 ,  H01L33/62

Abstract: Submount structures for light-emitting diode (LED) packages are provided. Submounts may include a base material that is configured to provide high thermal conductivity and a ceramic layer on the base material that is configured to provide high reflectivity for one or more LED chips that are mounted thereon. In certain aspects, the base material may include a ceramic base having a ceramic material that is different than a material of the ceramic layer. In certain aspects, submounts may also include additional ceramic layers configured to provide high reflectivity. In certain aspects, LED packages include electrical traces that are arranged either on one or more ceramic layers or at least partially embedded within one or more ceramic layers. The arrangement of such ceramic layers may provide increased reflectivity in areas where it may be difficult for other reflective materials to be present, such as gaps formed between tightly spaced electrical traces.

公开(公告)号：US20230170449A1

公开(公告)日：2023-06-01

申请号：US17539678

申请日：2021-12-01

Applicant: CreeLED, Inc.

Inventor： David Suich ,  Christopher P. Hussell ,  Michael Check ,  Colin Blakely ,  Steven Wuester ,  Brian T. Collins

IPC: H01L33/50 ,  H01L33/00

CPC classification number: H01L33/507 ,  H01L33/0093 ,  H01L33/502 ,  H01L33/505 ,  H01L33/382

Abstract: Aspects disclosed herein relate to light-emitting diode (LED) chips and manufacturing processes thereof. In certain aspects, an LED chip includes an epitaxial layer with a first side and a second side, a first type contact proximate a second side of the epitaxial layer, and a wavelength conversion element including at least one lumiphore. In certain embodiments, in a flip-chip construction, a distance between the at least one lumiphore and the epitaxial layer is less than 5 microns and/or the first side of the epitaxial layer includes texturing. In certain embodiments, in a vertical stack construction, a transparent bonding layer between the epitaxial layer and the wavelength conversion element includes inorganic material. In certain embodiments, a ceramic layer is bonded to the second side of the epitaxial layer and positioned horizontally adjacent to the first type contact. Such configurations facilitate construction, decrease size, and/or increase performance of the LED chips.

公开(公告)号：US20220199589A1

公开(公告)日：2022-06-23

申请号：US17538078

申请日：2021-11-30

Applicant: CreeLED, Inc.

Inventor： Peter Scott Andrews ,  David Suich ,  Kevin Haberern ,  Justin White

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/50

Abstract: Pixelated-LED chips include substrate sidewalls with sidewall involutions and/or increased sidewall surface area regions to affect light extraction therefrom. A LED lighting device incorporates a superstrate that supports lumiphoric material and includes sidewalls with sidewall involutions and/or increased sidewall surface area regions. Methods for fabricating sidewall features may include etching (e.g., deep etching) of substrate or superstrate materials, such as by using an etch mask having edges with non-linear shapes to produce and/or enhance sidewall involutions when an etchant is supplied through the etch mask to selectively consume substrate or superstrate material.

公开(公告)号：US20250022983A1

公开(公告)日：2025-01-16

申请号：US18221474

申请日：2023-07-13

Applicant: CreeLED, Inc.

Inventor： Michael Check ,  David Suich ,  Thomas Celano ,  Joseph G. Sokol ,  Colin Blakely

IPC: H01L33/14 ,  H01L33/10 ,  H01L33/40

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly current injection structures for LED chips are disclosed. Current injection structures include integrated layers or materials with high work functions as part of contact structures for epitaxial layers of active LED structures. Exemplary structures provide high work function contact layers for p-type epitaxial layers to enhance hole mobility and transport. Further contact structures include combinations of high work function layers with other current spreading layers. Exemplary materials for high work function layers include transition metal oxides.

公开(公告)号：US20250006709A1

公开(公告)日：2025-01-02

申请号：US18345166

申请日：2023-06-30

Applicant: CreeLED, Inc.

Inventor： Michael Check ,  David Suich ,  Colin Blakely ,  Andre Pertuit ,  Joseph G. Sokol ,  Robert Wilcox

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/56 ,  H01L33/62

Abstract: Semiconductor devices and more particularly edge-emitting semiconductor devices and related methods are disclosed. Exemplary edge-emitting semiconductor devices include LED edge emitters. Electrical connections for edge-emitting devices may be provided along certain device edges with opposing edges forming light-emitting edges. LED edge emitters may be vertically arranged and assembled together to form LED arrays with reduced pitch. Related methods include bonding multiple wafer-level structures, such as LED wafers, together, followed by separation techniques that result in individual edge emitters or groupings of edge emitters in the form of LED arrays.

公开(公告)号：US20240413271A1

公开(公告)日：2024-12-12

申请号：US18330805

申请日：2023-06-07

Applicant: CreeLED, Inc.

Inventor： Michael Check ,  David Suich ,  Colin Blakely ,  Andre Pertuit ,  Robert Wilcox ,  Joseph G. Sokol

IPC: H01L33/50 ,  H01L33/00 ,  H01L33/10 ,  H01L33/14 ,  H01L33/38 ,  H01L33/44

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly arrangements of lumiphoric materials within LED chips are disclosed. Lumiphoric materials are incorporated or otherwise embedded within LED chips. Embedded lumiphoric materials are provided so that at least some portions of light generated by active LED structures are subject to wavelength conversion before exiting LED chip surfaces. Lumiphoric materials may form dielectric and/or passivation layers between various chip structures, such as between active LED structures and internal reflective layers and/or electrical contacts. Internally converted light propagating within LED chips may pass back through active LED structures with reduced light absorption.

公开(公告)号：US20240266482A1

公开(公告)日：2024-08-08

申请号：US18163391

申请日：2023-02-02

Applicant: CreeLED, Inc.

Inventor： Andre Pertuit ,  Michael Check ,  David Suich ,  Colin Blakely ,  Robert Wilcox

IPC: H01L33/58 ,  H01L33/26 ,  H01L33/50

CPC classification number: H01L33/58 ,  H01L33/26 ,  H01L33/504

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly material arrangements in cover structures for LEDs that tailor light emissions are disclosed. Material arrangements include light-filtering particles or ionic species that are integrated within materials of covers structures that cover LED chips within LED packages. Light-filtering materials may be configured to selectively filter one or more portions of light provided by LED chips and/or lumiphoric materials within LED packages. Dispersing light-filtering materials within covers structures provides protection and mechanical support for the light-filtering materials. Additionally, arrangements and concentrations of light-filtering materials within cover structures may be varied horizontally and/or vertically to tailor emission patterns of corresponding LED packages. Material arrangements include light-filtering species incorporated at an atomic level within cover structures. Further material arrangements include photochromic particles configured to proportionally scatter light based on relative intensities of light from LED chips.

公开(公告)号：US12007326B2

公开(公告)日：2024-06-11

申请号：US17471951

申请日：2021-09-10

Applicant: CreeLED, Inc.

Inventor： Michael Check ,  David Suich ,  Steven Wuester

IPC: G01N21/552 ,  B82Y30/00 ,  H01L33/50 ,  H01L33/56

CPC classification number: G01N21/554 ,  H01L33/502 ,  H01L33/56 ,  B82Y30/00

Abstract: Lumiphoric materials and corresponding light-emitting devices, and more particularly localized surface plasmon resonance for enhanced photoluminescence of lumiphoric materials are disclosed. Plasmonic materials are disclosed that are configured to induce localized surface plasmon resonance and excite a corresponding localized surface plasmon enhanced electric field in response to incident light. An increase in photoluminescence of lumiphoric materials may be realized when the lumiphoric materials are arranged within the localized surface plasmon enhanced electric field. Plasmonic materials are disclosed that include various arrangements of nanoparticles and/or patterned structures with corresponding dielectric materials that are collectively arranged in close proximity to lumiphoric materials.