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    LIGHT-EMITTING DIODE CHIPS AND MANUFACTURING PROCESSES THEREOF
    3.
    发明公开
    LIGHT-EMITTING DIODE CHIPS AND MANUFACTURING PROCESSES THEREOF 审中-公开

    公开(公告)号：US20230170447A1

    公开(公告)日：2023-06-01

    申请号：US17539628

    申请日：2021-12-01

    Applicant: CreeLED, Inc.

    Inventor： David Suich ,  Christopher P. Hussell ,  Michael Check ,  Colin Blakely ,  Steven Wuester ,  Brian T. Collins

    IPC: H01L33/50 ,  H01L33/00

    CPC classification number: H01L33/505 ,  H01L33/0093 ,  H01L33/22

    Abstract: Aspects disclosed herein relate to light-emitting diode (LED) chips and manufacturing processes thereof. In certain aspects, an LED chip includes an epitaxial layer with a first side and a second side, a first type contact proximate a second side of the epitaxial layer, and a wavelength conversion element including at least one lumiphore. In certain embodiments, in a flip-chip construction, a distance between the at least one lumiphore and the epitaxial layer is less than 5 microns and/or the first side of the epitaxial layer includes texturing. In certain embodiments, in a vertical stack construction, a transparent bonding layer between the epitaxial layer and the wavelength conversion element includes inorganic material. In certain embodiments, a ceramic layer is bonded to the second side of the epitaxial layer and positioned horizontally adjacent to the first type contact. Such configurations facilitate construction, decrease size, and/or increase performance of the LED chips.

    LIGHT-EMITTING DIODE CHIPS AND MANUFACTURING PROCESSES THEREOF
    6.
    发明公开
    LIGHT-EMITTING DIODE CHIPS AND MANUFACTURING PROCESSES THEREOF 审中-公开

    公开(公告)号：US20230170449A1

    公开(公告)日：2023-06-01

    申请号：US17539678

    申请日：2021-12-01

    Applicant: CreeLED, Inc.

    Inventor： David Suich ,  Christopher P. Hussell ,  Michael Check ,  Colin Blakely ,  Steven Wuester ,  Brian T. Collins

    IPC: H01L33/50 ,  H01L33/00

    CPC classification number: H01L33/507 ,  H01L33/0093 ,  H01L33/502 ,  H01L33/505 ,  H01L33/382

    Abstract: Aspects disclosed herein relate to light-emitting diode (LED) chips and manufacturing processes thereof. In certain aspects, an LED chip includes an epitaxial layer with a first side and a second side, a first type contact proximate a second side of the epitaxial layer, and a wavelength conversion element including at least one lumiphore. In certain embodiments, in a flip-chip construction, a distance between the at least one lumiphore and the epitaxial layer is less than 5 microns and/or the first side of the epitaxial layer includes texturing. In certain embodiments, in a vertical stack construction, a transparent bonding layer between the epitaxial layer and the wavelength conversion element includes inorganic material. In certain embodiments, a ceramic layer is bonded to the second side of the epitaxial layer and positioned horizontally adjacent to the first type contact. Such configurations facilitate construction, decrease size, and/or increase performance of the LED chips.

    PHOSPHOR COMPOSITION
    7.
    发明申请
    PHOSPHOR COMPOSITION 有权

    公开(公告)号：US20220228059A1

    公开(公告)日：2022-07-21

    申请号：US17712646

    申请日：2022-04-04

    Applicant: CREELED, INC.

    Inventor： Brian T. Collins ,  Christopher P. Hussell ,  David T. Emerson ,  Ronan P. Le Toquin

    IPC: C09K11/77 ,  C04B35/597 ,  C04B35/58 ,  C04B35/581 ,  C04B35/584 ,  C09K11/08 ,  C09K11/02

    Abstract: A method is disclosed for forming a blended phosphor composition. The method includes the steps of firing precursor compositions that include europium and nitrides of at least calcium, strontium and aluminum, in a refractory metal crucible and in the presence of a gas that precludes the formation of nitride compositions between the nitride starting materials and the refractory metal that forms the crucible. The resulting compositions can include phosphors that convert frequencies in the blue portion of the visible spectrum into frequencies in the red portion of the visible spectrum.

    Binder materials for light-emitting devices
    8.
    发明授权
    Binder materials for light-emitting devices 有权

    公开(公告)号：US11705542B2

    公开(公告)日：2023-07-18

    申请号：US17002320

    申请日：2020-08-25

    Applicant: CreeLED, Inc.

    Inventor： Walter Weare ,  Derek Miller ,  Brian T. Collins ,  Colin Blakely

    IPC: H01L33/50 ,  H01L33/58

    CPC classification number: H01L33/501 ,  H01L33/505 ,  H01L33/58 ,  H01L33/504 ,  H01L33/508 ,  H01L2933/0041 ,  H01L2933/0091

    Abstract: Solid-state lighting devices including light-emitting diodes (LEDs), and more particularly binder materials for light-emitting devices are disclosed. A lumiphoric material for a light-emitting device may include lumiphoric particles embedded within a binder material. The lumiphoric material may be formed according to sol-gel chemistry techniques where a solution of binder precursors and lumiphoric particles is applied to a surface, dried to reduce liquid phase, and fired to form a hardened and dense lumiphoric material. The binder precursors may include metal oxide precursors that result in a metal oxide binder. In this manner, the lumiphoric material may have high thermal conductivity while also being adaptable for liquid-phase processing. In further embodiments, binder materials with or without lumiphoric particles may be utilized in place of conventional encapsulation materials for light-emitting devices.

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