公开(公告)号：US09653638B2

公开(公告)日：2017-05-16

申请号：US14137970

申请日：2013-12-20

Applicant: Matthieu Moors ,  David D. Smith ,  Gabriel Harley ,  Taeseok Kim

Inventor： Matthieu Moors ,  David D. Smith ,  Gabriel Harley ,  Taeseok Kim

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/061 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1864 ,  Y02E10/547

Abstract: A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

公开(公告)号：US09634177B2

公开(公告)日：2017-04-25

申请号：US14919049

申请日：2015-10-21

Applicant: Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

Inventor： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/20 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/0216 ,  H01L31/0745 ,  H01L31/0747

CPC classification number: H01L31/022441 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

公开(公告)号：US09520507B2

公开(公告)日：2016-12-13

申请号：US14579935

申请日：2014-12-22

Applicant: David D. Smith ,  Tim Dennis ,  Russelle De Jesus Tabajonda

Inventor： David D. Smith ,  Tim Dennis ,  Russelle De Jesus Tabajonda

IPC: H01L27/15 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0224

CPC classification number: H01L31/02008 ,  H01L21/3221 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/0368 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.

Abstract translation: 制造太阳能电池的方法可以包括在硅衬底上形成电介质区域。 该方法还可以包括在电介质区域上形成发射极区域，并在硅衬底的表面上形成掺杂区域。 在一个实施例中，该方法可以包括在高于900摄氏度的温度下加热硅衬底以将杂质吸收到发射极区域，并将掺杂剂从掺杂剂区域驱动到硅衬底的一部分。

公开(公告)号：US20160329441A1

公开(公告)日：2016-11-10

申请号：US15213273

申请日：2016-07-18

Applicant: David D. Smith ,  Tim Dennis ,  Russelle De Jesus Tabajonda

Inventor： David D. Smith ,  Tim Dennis ,  Russelle De Jesus Tabajonda

IPC: H01L31/02 ,  H01L31/0368 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/02008 ,  H01L21/3221 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/0368 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.

公开(公告)号：US20160284917A1

公开(公告)日：2016-09-29

申请号：US14672072

申请日：2015-03-27

Applicant: Seung Bum Rim ,  David D. Smith ,  Michael C. Johnson ,  Christine Bourdet Simmons

Inventor： Seung Bum Rim ,  David D. Smith ,  Michael C. Johnson ,  Christine Bourdet Simmons

IPC: H01L31/075 ,  H01L31/0216 ,  H01L31/077 ,  H01L31/0376 ,  H01L31/0224

CPC classification number: H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/0747 ,  Y02E10/50

Abstract: Methods of fabricating solar cells having passivation layers, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a first surface and a second surface. A plurality of emitter regions is disposed on the first surface of the substrate and spaced apart from one another. An amorphous silicon passivation layer is disposed on each of the plurality of emitter regions and between each of the plurality of emitter regions, directly on an exposed portion of the first surface of the substrate.

Abstract translation: 描述了制造具有钝化层的太阳能电池的方法和所得到的太阳能电池。 在一个示例中，太阳能电池包括具有第一表面和第二表面的基板。 多个发射极区域设置在基板的第一表面上并且彼此间隔开。 非晶硅钝化层设置在多个发射极区域中的每一个上，并且在多个发射极区域中的每一个之间，直接位于衬底的第一表面的暴露部分上。

公开(公告)号：US20160233348A1

公开(公告)日：2016-08-11

申请号：US15135225

申请日：2016-04-21

Applicant: David D. Smith

Inventor： David D. Smith

IPC: H01L31/0216 ,  H01L31/02 ,  H01L31/068 ,  H01L31/028 ,  H01L31/0376

Abstract: A solar cell can have a first dielectric formed over a it doped region of a silicon substrate. The solar cell can have a second dielectric formed over a second doped region of the silicon substrate, where the first dielectric is a different type of dielectric than the second dielectric. A doped semiconductor can be formed over the first and second dielectric. A positive-type metal and a negative-type metal can be formed over the doped semiconductor.

Abstract translation: 太阳能电池可以具有在硅衬底的其掺杂区域上形成的第一电介质。 太阳能电池可以具有在硅衬底的第二掺杂区域上形成的第二电介质，其中第一电介质是与第二电介质不同类型的电介质。 可以在第一和第二电介质上形成掺杂半导体。 可以在掺杂半导体上形成正型金属和负型金属。

公开(公告)号：US20160072000A1

公开(公告)日：2016-03-10

申请号：US14578216

申请日：2014-12-19

Applicant: David D. Smith

Inventor： David D. Smith

IPC: H01L31/18 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/0368 ,  H01L31/0224

CPC classification number: H01L31/1804 ,  H01L31/02363 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/1872 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: Methods of fabricating solar cells using improved front contact heterojunction processes, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having first and second light-receiving surfaces. A tunnel dielectric layer is disposed on the first and second light-receiving surfaces. An N-type polycrystalline silicon layer is disposed on the portion of the tunnel dielectric layer disposed on the first light-receiving surface. A P-type polycrystalline silicon layer is disposed on the portion of the tunnel dielectric layer disposed on the second light-receiving surface. A transparent conductive oxide layer is disposed on the N-type polycrystalline silicon layer and on the P-type polycrystalline silicon layer. A first set of conductive contacts is disposed on the portion of the transparent conductive oxide layer disposed on the N-type polycrystalline silicon layer. A second set of conductive contacts is disposed on the portion of the transparent conductive oxide layer disposed on the P-type polycrystalline silicon layer.

Abstract translation: 描述了使用改进的前接触异质结工艺制造太阳能电池的方法，以及所得到的太阳能电池。 在一个示例中，太阳能电池包括具有第一和第二光接收表面的基板。 隧道介电层设置在第一和第二光接收表面上。 N型多晶硅层设置在设置在第一受光面上的隧道介电层的部分上。 P型多晶硅层设置在设置在第二受光面上的隧道介电层的部分上。 在N型多晶硅层和P型多晶硅层上设置透明导电氧化物层。 第一组导电触点设置在设置在N型多晶硅层上的透明导电氧化物层的部分上。 第二组导电触点设置在设置在P型多晶硅层上的透明导电氧化物层的部分上。

公开(公告)号：US20160071996A1

公开(公告)日：2016-03-10

申请号：US14945708

申请日：2015-11-19

Applicant: Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

Inventor： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC: H01L31/0747 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/0747 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/0745 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

公开(公告)号：US09231129B2

公开(公告)日：2016-01-05

申请号：US14229716

申请日：2014-03-28

Applicant: Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

Inventor： Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

IPC: H01L21/00 ,  H01L31/0224 ,  H01L31/0687 ,  H01L31/02

CPC classification number: H01L31/02245 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0475 ,  H01L31/0512 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0745 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

Abstract: Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

Abstract translation: 描述了用于太阳能电池和所得太阳能电池的箔基金属化的方法。 在一个示例中，太阳能电池包括基板。 多个交替的N型和P型半导体区域设置在衬底中或上方。 导电接触结构设置在多个交替的N型和P型半导体区域的上方。 导电接触结构包括多个金属种子材料区域，其提供设置在每个交替的N型和P型半导体区域上的金属种子材料区域。 金属箔设置在多个金属种子材料区域上，金属箔具有阳极化部分，隔离与交替的N型和P型半导体区对应的金属箔的金属区域。

公开(公告)号：US20150162483A1

公开(公告)日：2015-06-11

申请号：US14562159

申请日：2014-12-05

Applicant: Timothy Weidman ,  David D. Smith

Inventor： Timothy Weidman ,  David D. Smith

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/0368

CPC classification number: H01L31/182 ,  H01L31/022441 ,  H01L31/035272 ,  H01L31/0682 ,  H01L31/1864 ,  H01L31/1872 ,  H01L31/1876 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a method of fabricating alternating N-type and P-type emitter regions of a solar cell involves forming a silicon layer above a substrate. Dopant impurity atoms of a first conductivity type are implanted, through a first shadow mask, in the silicon layer to form first implanted regions and resulting in non-implanted regions of the silicon layer. Dopant impurity atoms of a second, opposite, conductivity type are implanted, through a second shadow mask, in portions of the non-implanted regions of the silicon layer to form second implanted regions and resulting in remaining non-implanted regions of the silicon layer. The remaining non-implanted regions of the silicon layer are removed with a selective etch process, while the first and second implanted regions of the silicon layer are annealed to form doped polycrystalline silicon emitter regions.

Abstract translation: 描述了使用离子注入制造太阳能电池发射极区域的方法，以及所得到的太阳能电池。 在一个示例中，制造太阳能电池的交替的N型和P型发射极区域的方法涉及在衬底上形成硅层。 第一导电类型的掺杂杂质原子通过第一阴影掩模在硅层中注入以形成第一注入区，并产生硅层的非注入区。 通过第二阴影掩模，在硅层的非注入区域的一部分中注入第二相对导电类型的掺杂杂质原子，以形成第二注入区，并产生硅层的剩余未注入区。 通过选择性蚀刻工艺去除硅层的其余非注入区域，同时对硅层的第一和第二注入区域进行退火以形成掺杂的多晶硅发射极区域。