公开(公告)号：US20050026459A1

公开(公告)日：2005-02-03

申请号：US10630970

申请日：2003-07-31

申请人： David O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

发明人： David O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

IPC分类号： C23C16/30 ,  H01L21/00 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28185 ,  C23C16/308 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L21/67098 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Ultra-thin oxynitride layers are formed utilizing low-pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, or a nitride layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or a single-wafer process chamber.

摘要翻译： 使用低压处理形成超薄氧氮化物层，以实现衬底的自限制氧化并提供超薄氧氮化物。 要处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层或氮化物层，或者可以缺少初始介电层。 处理可以使用间歇式处理室或单晶片处理室进行。

公开(公告)号：US20110065287A1

公开(公告)日：2011-03-17

申请号：US12557771

申请日：2009-09-11

申请人： Cory Wajda

发明人： Cory Wajda

IPC分类号： H01L21/314

CPC分类号： H01L21/02148 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31645

摘要： A method is provided for forming a metal-silicon-containing film on a substrate by pulsed chemical vapor deposition. The method includes providing the substrate in a process chamber, maintaining the substrate at a temperature suited for chemical vapor deposition of a metal-silicon-containing film by thermal decomposition of a metal-containing gas and a silicon-containing gas on the substrate, exposing the substrate to a continuous flow of the metal-containing gas, and during the continuous flow, exposing the substrate to sequential pulses of the silicon-containing gas.

摘要翻译： 提供了通过脉冲化学气相沉积在基板上形成含金属硅膜的方法。 该方法包括在处理室中提供衬底，通过在衬底上热分解含金属气体和含硅气体，将衬底保持在适于化学气相沉积含金属硅膜的温度，将衬底暴露 该衬底连续流入含金属的气体，并且在连续流动期间，将衬底暴露于含硅气体的顺序脉冲。

公开(公告)号：US20070065593A1

公开(公告)日：2007-03-22

申请号：US11231336

申请日：2005-09-21

申请人： Cory Wajda ,  David O'Meara ,  Masanobu Igeta

发明人： Cory Wajda ,  David O'Meara ,  Masanobu Igeta

IPC分类号： B05D3/00 ,  H05H1/24

CPC分类号： H01L21/02238 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3144 ,  H01L21/31654

摘要： A method for preparing an oxide film on a substrate. A surface of a substrate is oxidized to form an oxide film. The surface is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation and plasma induced dissociation of a process gas comprising at least one molecular composition comprising oxygen.

摘要翻译： 一种在基板上制备氧化膜的方法。 将基板的表面氧化形成氧化膜。 该表面暴露于由紫外线（UV）辐射诱导的解离形成的氧自由基和等离子体诱导的包含至少一种包含氧的分子组合物的工艺气体的解离。

公开(公告)号：US20050070104A1

公开(公告)日：2005-03-31

申请号：US10674703

申请日：2003-09-30

申请人： David O'Meara ,  Daniel Burdett ,  Stephen Cabral ,  Gert Leusink ,  John Kostenko ,  Cory Wajda

发明人： David O'Meara ,  Daniel Burdett ,  Stephen Cabral ,  Gert Leusink ,  John Kostenko ,  Cory Wajda

IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/67276 ,  B81C99/0065 ,  B81C2201/0138 ,  H01L21/67253

摘要： A method and system for monitoring status of a system component during a process. The method includes exposing a system component to a reactant gas during a process, where the reactant gas is capable of etching the system component material to form an erosion product, and monitoring release of the erosion product during the process to determine status of the system component. Processes that can be monitored include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, an injector, a substrate holder, a liner, a pedestal, a cap cover, an electrode, and a heater, any of which can further include a protective coating. The processing system includes the system component in a process chamber, a gas injection system for introducing the reactant gas, a chamber protection system for monitoring the status of the system component, and a controller for controlling the processing system in response to the status.

摘要翻译： 一种在过程中监视系统组件的状态的方法和系统。 该方法包括在过程期间将系统组分暴露于反应气体，其中反应气体能够蚀刻系统组分材料以形成侵蚀产物，并且在该过程期间监测侵蚀产物的释放以确定系统部件的状态 。 可以监测的方法包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺。 系统组件可以是消耗系统部件，例如处理管，屏蔽件，环，挡板，注射器，衬底保持器，衬垫，基座，帽盖，电极和加热器 其可以进一步包括保护涂层。 处理系统包括处理室中的系统部件，用于引入反应气体的气体注入系统，用于监视系统部件的状态的室保护系统以及响应于状态来控制处理系统的控制器。

公开(公告)号：US07964515B2

公开(公告)日：2011-06-21

申请号：US11963150

申请日：2007-12-21

申请人： Robert D. Clark ,  Cory Wajda

发明人： Robert D. Clark ,  Cory Wajda

IPC分类号： H01L21/31 ,  H01L21/469 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01L21/3141 ,  C23C16/30 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/31641 ,  H01L21/31645 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517

摘要： A method is provided for forming high dielectric constant (high-k) films for semiconductor devices. According to one embodiment, a metal-carbon-oxygen high-k film is deposited by alternately and sequentially exposing a substrate to a metal-carbon precursor and near saturation exposure level of an oxidation source containing ozone. The method is capable of forming a metal-carbon-oxygen high-k film with good thickness uniformity while impeding growth of an interface layer between the metal-carbon-oxygen high-k film and the substrate. According to one embodiment, the metal-carbon-oxygen high-k film may be treated with an oxidation process to remove carbon from the film.

摘要翻译： 提供一种用于形成用于半导体器件的高介电常数（高k）膜的方法。 根据一个实施方案，通过交替地和顺序地将基底暴露于金属 - 碳前体和含有臭氧的氧化源的近饱和暴露水平来沉积金属 - 碳 - 氧高k膜。 该方法能够形成具有良好厚度均匀性的金属 - 碳 - 氧高k膜，同时阻碍金属 - 碳 - 氧高k膜和衬底之间的界面层的生长。 根据一个实施例，金属 - 碳 - 氧高k膜可以用氧化工艺处理以从膜去除碳。

公开(公告)号：US07300891B2

公开(公告)日：2007-11-27

申请号：US11091755

申请日：2005-03-29

申请人： Igeta Masonobu ,  Cory Wajda ,  Gert Leusink

发明人： Igeta Masonobu ,  Cory Wajda ,  Gert Leusink

IPC分类号： H01L21/00

CPC分类号： H01L21/76801 ,  C23C16/345 ,  C23C16/56 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829

摘要： A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to electro-magnetic (EM) radiation, such as EM radiation having a wavelength component less than about 500 nm. The EM source can include a multi-frequency source of radiation. Additionally, the source of radiation is collimated in order to selectively treat regions of a non-planar film.

摘要翻译： 描述了一种用于增加在诸如氮化硅膜之类的衬底上形成的薄膜中的拉伸应力的方法和系统。 薄膜可以是平面薄膜，或非平面薄膜，例如在NMOS栅极上形成的氮化物薄膜。 该薄膜暴露于电磁（EM）辐射，例如波长分量小于约500nm的EM辐射。 EM源可以包括多频辐射源。 另外，为了选择性地处理非平面膜的区域，准直辐射源。

公开(公告)号：US20060228902A1

公开(公告)日：2006-10-12

申请号：US11093260

申请日：2005-03-30

申请人： Masanobu Igeta ,  Cory Wajda ,  David O'Meara ,  Kristen Scheer ,  Toshihara Eurakawa

发明人： Masanobu Igeta ,  Cory Wajda ,  David O'Meara ,  Kristen Scheer ,  Toshihara Eurakawa

IPC分类号： H01L21/31

CPC分类号： C23C8/34 ,  C23C8/36 ,  H01J37/32192 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3144 ,  H01L21/31662

摘要： The present invention generally provides a method for preparing an oxynitride film on a substrate. A surface of the substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film on the surface. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits to nitridate the oxide film and form the oxynitride film.

公开(公告)号：US20060228898A1

公开(公告)日：2006-10-12

申请号：US11093261

申请日：2005-03-30

申请人： Cory Wajda ,  Masanobu Igeta ,  Gerrit Leusink

发明人： Cory Wajda ,  Masanobu Igeta ,  Gerrit Leusink

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C8/34 ,  C23C8/36 ,  H01J37/32192 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/31691 ,  H01L28/56

摘要： A method for preparing an interfacial layer for a high-k dielectric layer on a substrate. A surface of said substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen to nitridate the oxide film to form the interfacial layer. A high-k dielectric layer is formed on said interfacial layer.

摘要翻译： 一种制备用于衬底上的高k电介质层的界面层的方法。 所述衬底的表面暴露于由紫外线（UV）辐射引起的包含至少一种包含氧的分子组合物的第一工艺气体的解离形成的氧自由基以形成氧化膜。 将氧化膜暴露于通过包含至少一种包含氮的分子组合物的第二工艺气体的等离子体诱导解离而形成的氮自由基以氮化氧化物膜以形成界面层。 在所述界面层上形成高k电介质层。

公开(公告)号：US20060228871A1

公开(公告)日：2006-10-12

申请号：US11093262

申请日：2005-03-30

申请人： Cory Wajda ,  Kristen Scheer ,  Toshihara Furakawa

发明人： Cory Wajda ,  Kristen Scheer ,  Toshihara Furakawa

IPC分类号： B01J19/08 ,  H01L21/20

CPC分类号： H01L21/3144 ,  C23C8/28 ,  C23C8/36

摘要： A method for preparing an oxynitride film on a substrate comprising forming the oxynitride film by exposing a surface of the substrate to oxygen radicals and nitrogen radicals formed by plasma induced dissociation of a process gas comprising nitrogen and oxygen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits.

公开(公告)号：US20060068603A1

公开(公告)日：2006-03-30

申请号：US10711721

申请日：2004-09-30

申请人： Cory Wajda

发明人： Cory Wajda

IPC分类号： H01L21/31

CPC分类号： H01L21/02181 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/5096 ,  C23C16/52 ,  H01L21/02142 ,  H01L21/02175 ,  H01L21/02271 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31645 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517

摘要： A method for forming a thin complete high-k layer for semiconductor applications. The method includes providing a substrate in a process chamber, depositing a thick complete high-k layer on the substrate, and thinning the deposited high-k layer to form a thin complete high-k layer on the substrate. Alternately, the substrate can contain an interface layer between the substrate and the high-k layer. The thinning can be performed by exposing the thick high-k layer to a reactive plasma etch process or, alternately, a plasma process capable of modifying a portion of the thick high-k layer and subsequently removing the modified portion of the thick high-k layer using wet processing.

摘要翻译： 一种形成用于半导体应用的薄的完整高k层的方法。 该方法包括在处理室中提供衬底，在衬底上沉积厚的完整的高k层，以及稀薄沉积的高k层以在衬底上形成薄的完整的高k层。 或者，衬底可以在衬底和高k层之间包含界面层。 可以通过将厚的高k层暴露于反应性等离子体蚀刻工艺或者替代地，能够修饰厚的高k层的一部分并随后去除厚的高k的修饰部分的等离子体工艺来进行减薄 层采用湿法加工。