公开(公告)号：US20050241581A1

公开(公告)日：2005-11-03

申请号：US11175523

申请日：2005-07-05

申请人： Craig Carpenter ,  Ross Dando ,  Philip Campbell ,  Allen Mardian ,  Jeff Fuss ,  Randy Mercil

发明人： Craig Carpenter ,  Ross Dando ,  Philip Campbell ,  Allen Mardian ,  Jeff Fuss ,  Randy Mercil

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/08 ,  C23C16/00

CPC分类号： C23C16/45544 ,  C30B25/08

摘要： A chemical vapor deposition (CVD) apparatus includes a deposition chamber defined partly by a chamber wall. The chamber wall has an innermost surface inside the chamber and an outermost surface outside the chamber. The apparatus further includes a valve body having a seat between the innermost and outermost surfaces of the chamber wall. The chamber wall can be a lid and the valve can include a portion of the lid as at least a part of the seat. The valve body can include at least a part of a valve housing between the innermost and outermost surfaces of the chamber wall. Such a valve body can even include a portion of the chamber wall as at least part of the valve housing. The deposition apparatus can further include at least a part of a process chemical inlet to the valve body between the innermost and outermost surfaces of the chamber wall. In one example, the chamber wall can form at least a part of the chemical inlet. A deposition method includes temporarily isolating a process chemical supply line from a deposition chamber at a chamber wall of the deposition chamber. While isolated at the chamber wall, the supply line can be filled to a first pressure with chemical through a supply valve upstream from the chamber wall. The chemical can be released from the supply line into the deposition chamber at the chamber wall. The supply line can be again temporarily isolated from the deposition chamber at the chamber wall.

摘要翻译： 化学气相沉积（CVD）装置包括由室壁部分地限定的沉积室。 室壁具有在腔室内的最内表面和室外的最外表面。 该装置还包括阀体，其具有在室壁的最内表面和最外表面之间的座。 室壁可以是盖子，并且阀门可以包括作为座椅的至少一部分的盖子的一部分。 阀体可以包括在室壁的最内表面和最外表面之间的阀壳的至少一部分。 这种阀体甚至可以包括作为阀壳体的至少一部分的室壁的一部分。 沉积设备还可以包括在室壁的最内表面和最外表面之间的阀体的至少一部分过程化学品入口。 在一个示例中，室壁可以形成化学品入口的至少一部分。 沉积方法包括将沉积室的沉积室临时隔离工艺化学品供应管线。 虽然在室壁处隔离，但是供应管线可以通过来自室壁上游的供应阀将化学物质填充到第一压力。 化学品可以从供应管线释放到室壁处的沉积室中。 供应管线可以再次临时从室壁处的沉积室隔离。

公开(公告)号：US20050078462A1

公开(公告)日：2005-04-14

申请号：US10683806

申请日：2003-10-10

申请人： Ross Dando ,  Dan Gealy ,  Craig Carpenter ,  Philip Campbell ,  Allen Mardian

发明人： Ross Dando ,  Dan Gealy ,  Craig Carpenter ,  Philip Campbell ,  Allen Mardian

IPC分类号： C23C16/48 ,  H01L21/314 ,  H01L29/78

CPC分类号： H01L21/02271 ,  C23C16/45523 ,  C23C16/483 ,  H01L21/0228 ,  H01L21/3141 ,  H01L29/78

摘要： Apparatus is provided for a method of forming a film on a substrate that includes activating a gas precursor to deposit a material on the substrate by irradiating the gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor. The electromagnetic energy can be provided by an array of lasers. The frequency of the laser beam is selected by switching from one laser in the array to another laser in the array. The laser array may include laser diodes, one or more tunable lasers, solid state lasers, or gas lasers. The frequency of the electromagnetic energy is selected to impart specific amounts of energy to a gas precursor at a specific frequency that provides point of use activation of the gas precursor.

摘要翻译： 提供了一种在衬底上形成膜的方法，该方法包括通过用调谐到气体前体的吸收频率的频率的电磁能照射气体前体来激活气体前体以将材料沉积在衬底上。 电磁能可由激光阵列提供。 通过从阵列中的一个激光器切换到阵列中的另一个激光器来选择激光束的频率。 激光器阵列可以包括激光二极管，一个或多个可调激光器，固态激光器或气体激光器。 选择电磁能量的频率以将特定量的能量以提供气体前体的使用激活的特定频率赋予气体前体。

公开(公告)号：US20050011974A1

公开(公告)日：2005-01-20

申请号：US10917640

申请日：2004-08-13

申请人： Ross Dando ,  Allen Mardian ,  Raynald Cantin ,  Gurtej Sandhu

发明人： Ross Dando ,  Allen Mardian ,  Raynald Cantin ,  Gurtej Sandhu

IPC分类号： C23C16/448 ,  F02M25/025 ,  F02M25/032 ,  H01L21/00 ,  B05B1/30

CPC分类号： H01L21/6708 ,  C23C16/4481

摘要： The present invention is generally directed to a vaporizer with positive liquid shut-off. In one illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body, a nozzle positioned within the body, the nozzle having at least one opening formed therethrough that defines a vaporized liquid exit, and a positive shut-off valve, a portion of which is adapted to engage the vaporized liquid exit of the nozzle. In another illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body and a plurality of peltier cells coupled to the body.

摘要翻译： 本发明一般涉及具有正液体截止的汽化器。 在一个说明性实施例中，蒸发器包括主体，液体入口和连接到主体的载气入口，位于主体内的喷嘴，喷嘴具有限定蒸发的液体出口的至少一个通过其形成的开口，以及 正截止阀，其一部分适于接合喷嘴的汽化液体出口。 在另一个说明性实施例中，蒸发器包括主体，液体入口和连接到主体的载气入口以及耦合到主体的多个珀耳帖细胞。

公开(公告)号：US20070190785A1

公开(公告)日：2007-08-16

申请号：US11351640

申请日：2006-02-10

申请人： Ross Dando

发明人： Ross Dando

IPC分类号： H01L21/302 ,  H01L21/306

CPC分类号： H01L21/30604 ,  C09K13/00 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67086

摘要： A method for removing material from surfaces of at least a portion of at least one recess or at least one aperture extending into a surface of a substrate includes pressurizing fluid so as to cause the fluid to flow into the at least one recess or at least one aperture. The fluid may be pressurized by generating a pressure differential across the substrate, which causes the fluid to flow into or through the at least one aperture or recess. Apparatus for pressurizing fluid so as to cause it to flow into or through recesses or apertures in a substrate are also disclosed.

摘要翻译： 从至少一个凹部的至少一部分的至少一部分的表面上移除材料的方法或至少一个延伸到衬底的表面中的孔的方法包括加压流体，以使流体流入至少一个凹部或至少一个凹部 光圈。 流体可以通过在衬底上产生压差来加压，这导致流体流入或穿过至少一个孔或凹槽。 还公开了用于加压流体以使其流入或穿过基底中的凹部或孔的装置。

公开(公告)号：US20050249887A1

公开(公告)日：2005-11-10

申请号：US10840571

申请日：2004-05-06

申请人： Ross Dando ,  Dan Gealy

发明人： Ross Dando ,  Dan Gealy

IPC分类号： C23C16/00 ,  C23C16/04 ,  C23C16/48

CPC分类号： C23C16/047 ,  C23C16/45525 ,  C23C16/483 ,  C23C16/52

摘要： Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces are disclosed herein. In one embodiment, a method includes depositing molecules of a gas onto a microfeature workpiece in the reaction chamber and selectively irradiating a first portion of the molecules on the microfeature workpiece in the reaction chamber with a selected radiation without irradiating a second portion of the molecules on the workpiece with the selected radiation. The first portion of the molecules can be irradiated to activate the portion of the molecules or desorb the portion of the molecules from the workpiece. The first portion of the molecules can be selectively irradiated by impinging the first portion of the molecules with a laser beam or other energy source.

摘要翻译： 本文公开了在反应室中的微型工件上沉积材料的方法和用于将材料沉积到微特征工件上的系统。 在一个实施方案中，一种方法包括将气体的分子沉积到反应室中的微特征工件上，并用选定的辐射选择性地照射反应室中的微特征工件上的分子的第一部分，而不会将分子的第二部分 工件与选定的辐射。 可以照射分子的第一部分以激活分子的一部分或从工件解吸部分分子。 分子的第一部分可以通过用激光束或其他能量源撞击分子的第一部分来选择性地照射。

公开(公告)号：US20050133161A1

公开(公告)日：2005-06-23

申请号：US10933604

申请日：2004-09-02

申请人： Craig Carpenter ,  Allen Mardian ,  Ross Dando ,  Kimberly Tschepen ,  Garo Derderian

发明人： Craig Carpenter ,  Allen Mardian ,  Ross Dando ,  Kimberly Tschepen ,  Garo Derderian

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23F1/00

CPC分类号： C23C16/45544 ,  C23C16/45565

摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.

摘要翻译： 用于将材料气相沉积到微电子工件上的反应器，包括这种反应器的系统以及将材料沉积到微电子工件上的方法。 在一个实施方案中，用于气相沉积材料的反应器包括反应室和气体分配器。 反应室可以包括入口和出口。 气体分配器位于反应室中。 气体分配器具有联接到入口以接收气流的隔室和分布板，分配器板包括面向隔室的第一表面，面对反应室的第二表面和多个通道。 通道从第一表面延伸穿过分配器板到第二表面。 此外，至少一个通道具有穿过板的至少一部分闭塞的流动路径。 例如，封闭通道可以相对于分配器板的第一表面倾斜地倾斜，使得流过倾斜通道的气体在通过分配器板时改变方向。

公开(公告)号：US20050121088A1

公开(公告)日：2005-06-09

申请号：US11034015

申请日：2005-01-11

申请人： Ross Dando ,  Gurtej Sandhu ,  Allen Mardian

发明人： Ross Dando ,  Gurtej Sandhu ,  Allen Mardian

IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C30B25/10 ,  C30B25/14 ,  F16K11/072

CPC分类号： C30B25/14 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45561 ,  C30B25/105 ,  Y10S118/90 ,  Y10T137/86839 ,  Y10T137/86863

摘要： The invention includes chemical vapor deposition methods, including atomic layer deposition, and valve assemblies for use with a reactive precursor in semiconductor processing. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a chemical vapor deposition chamber. A first deposition precursor is fed to a remote plasma generation chamber positioned upstream of the deposition chamber, and a plasma is generated therefrom within the remote chamber and effective to form a first active deposition precursor species. The first species is flowed to the deposition chamber. During the flowing, flow of at least some of the first species is diverted from entering the deposition chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. At some point, diverting is ceased while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. Other aspects and implementations are contemplated.

公开(公告)号：US20050011449A1

公开(公告)日：2005-01-20

申请号：US10916918

申请日：2004-08-12

申请人： Weimin Li ,  Neal Rueger ,  Li Li ,  Ross Dando ,  Kevin Hamer ,  Allen Mardian ,  Gurtej Sandhu

发明人： Weimin Li ,  Neal Rueger ,  Li Li ,  Ross Dando ,  Kevin Hamer ,  Allen Mardian ,  Gurtej Sandhu

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/507

摘要： The present invention is generally directed to a novel gas delivery system for various deposition processes, and various methods of using same. In one illustrative embodiment, a deposition tool comprises a process chamber, a wafer stage adapted for holding a wafer positioned therein, and a gas delivery system positioned in the chamber above a position where a plasma will be generated in the chamber, wherein substantially all of a reactant gas is delivered into the chamber via the gas delivery system. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed so as to cover substantially all of an area defined by an upper surface of the wafer. In one illustrative embodiment, the method comprises positioning a wafer in a process chamber of a deposition tool, generating a plasma within the process chamber above the wafer, and forming a layer of material above the wafer by introducing substantially all of a reactant gas used to form the layer of material into the process chamber above the plasma via a gas delivery system positioned above the plasma. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed to cover substantially all of an area defined by an upper surface of the wafer.

摘要翻译： 本发明一般涉及用于各种沉积工艺的新型气体输送系统及其使用方法。 在一个说明性实施例中，沉积工具包括处理室，适于保持位于其中的晶片的晶片台，以及定位在室中的气体输送系统，其位于室内将产生等离子体的位置，其中基本上全部 反应气体通过气体输送系统输送到室中。 在另一说明性实施例中，离开气体输送系统的反应物气体被引导以覆盖由晶片的上表面限定的基本上所有的区域。 在一个示例性实施例中，该方法包括将晶片定位在沉积工具的处理室中，在晶片上方的处理室内产生等离子体，并且通过将基本上所有的反应气体基本上引入到 通过位于等离子体上方的气体输送系统将材料层形成在等离子体上方的处理室中。 在另一示例性实施例中，离开气体输送系统的反应物气体被引导以覆盖由晶片的上表面限定的基本上所有的区域。

公开(公告)号：US20120061786A1

公开(公告)日：2012-03-15

申请号：US12879452

申请日：2010-09-10

申请人： Kevin Hutto ,  Ross Dando ,  Swarnal Borthakur ,  Richard Mauritzson

发明人： Kevin Hutto ,  Ross Dando ,  Swarnal Borthakur ,  Richard Mauritzson

IPC分类号： H01L31/0232 ,  H01L31/18 ,  H01L23/528

CPC分类号： H01L31/02327 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit for use, for example, in a backside illuminated imager device includes circuitry provided on a first side of a substrate, a first conductive pad connected to the circuitry and spaced from the first side of the substrate, a second conductive pad spaced from a second side of the substrate, an electrically conductive interconnect formed through the substrate to interconnect the first and second conductive pads, and a dielectric surrounding the second conductive pad and at least a portion of the interconnect. Methods of forming the integrated circuit are also described.

摘要翻译： 用于例如背面照明成像器件的集成电路包括设置在衬底的第一侧上的电路，连接到电路并与衬底的第一侧间隔开的第一导电焊盘，与衬底间隔开的第二导电焊盘 衬底的第二侧，通过衬底形成的用于互连第一和第二导电焊盘的导电互连，以及围绕第二导电焊盘和至少一部分互连的电介质。 还描述了形成集成电路的方法。

公开(公告)号：US20070049016A1

公开(公告)日：2007-03-01

申请号：US11217169

申请日：2005-09-01

申请人： William Hiatt ,  Ross Dando

发明人： William Hiatt ,  Ross Dando

IPC分类号： H01L21/44

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/13025

摘要： Methods for forming interconnects in microfeature workpieces, and microfeature workpieces having such interconnects are disclosed herein. The microfeature workpieces may have a terminal and a substrate with a first side carrying the terminal and a second side opposite the first side. In one embodiment, a method includes (a) constructing an electrically conductive interconnect extending from the terminal to at least an intermediate depth in the substrate with the interconnect electrically connected to the terminal, and (b) removing material from the second side of the substrate so that a portion of the interconnect projects from the substrate.

摘要翻译： 在微型工件中形成互连的方法以及具有这种互连的微型工件在此公开。 微型工件可以具有端子和具有承载端子的第一侧和与第一侧相对的第二侧的基板。 在一个实施例中，一种方法包括（a）构造从终端延伸到衬底中的至少中间深度的导电互连，其中互连电连接到端子，以及（b）从衬底的第二侧去除材料 使得互连的一部分从基板突出。