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    Methods of forming magnetoresistive devices and integrated circuits
    25.
    发明授权
    Methods of forming magnetoresistive devices and integrated circuits 有权

    公开(公告)号：US11482570B2

    公开(公告)日：2022-10-25

    申请号：US17134865

    申请日：2020-12-28

    Applicant: Everspin Technologies, Inc.

    Inventor： Kerry Joseph Nagel ,  Sanjeev Aggarwal ,  Thomas Andre ,  Sarin A. Deshpande

    IPC: H01L29/82 ,  H01L43/00 ,  H01L27/22 ,  H01L43/08 ,  G11C11/16 ,  H01L43/12 ,  H01L43/02

    Abstract: Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such devices into standard process flows used for surrounding logic/circuitry. In some embodiments, the magnetoresistive device structures are designed such that the devices are able to fit within the vertical dimensions of the integrated circuit associated with a single metal layer and a single layer of interlayer dielectric material. Integrating the processing for the magnetoresistive devices can include using the same standard interlayer dielectric material as used in the surrounding circuits on the integrated circuit as well as using standard vias to interconnect to at least one of the electrodes of the magnetoresistive devices.

    Method of integration of a magnetoresistive structure
    26.
    发明授权
    Method of integration of a magnetoresistive structure 有权

    公开(公告)号：US11031546B2

    公开(公告)日：2021-06-08

    申请号：US16194523

    申请日：2018-11-19

    Applicant: Everspin Technologies, Inc.

    Inventor： Kerry Joseph Nagel ,  Kenneth H. Smith ,  Moazzem Hossain ,  Sanjeev Aggarwal

    IPC: H01L21/3213 ,  H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L21/768 ,  H01L21/285 ,  H01L43/02

    Abstract: A method of manufacturing one or more interconnects to magnetoresistive structure comprising (i) depositing a first conductive material in a via; (2) etching the first conductive material wherein, after etching the first conductive material a portion of the first conductive material remains in the via, (3) partially filling the via by depositing a second conductive material in the via and directly on the first conductive material in the via; (4) depositing a first electrode material in the via and directly on the second conductive material in the via; (5) polishing a first surface of the first electrode material wherein, after polishing, the first electrode material is (i) on the second conductive material in the via and (ii) over the portion of the first conductive material remaining in the via; and (6) forming a magnetoresistive structure over the first electrode material.

    Apparatus and methods for integrating magnetoresistive devices
    28.
    发明授权
    Apparatus and methods for integrating magnetoresistive devices 有权

    公开(公告)号：US10297747B2

    公开(公告)日：2019-05-21

    申请号：US15958444

    申请日：2018-04-20

    Applicant: Everspin Technologies, Inc.

    Inventor： Sarin A. Deshpande ,  Sanjeev Aggarwal ,  Moazzem Hossain

    IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L21/768

    Abstract: The present disclosure is drawn to, among other things, a method of fabricating an integrated circuit device having a magnetoresistive device. In some aspects, the method includes forming the magnetoresistive device on a first contact of a substrate, wherein the magnetoresistive device includes a fixed magnetic region and a free magnetic region separated by an intermediate region; depositing a first dielectric material over the magnetoresistive device; depositing a second dielectric material over the first dielectric material; polishing a surface of the second dielectric material; forming a first cavity through the polished surface of the second dielectric material to expose a surface of the magnetoresistive device; and depositing an electrically conductive material in the first cavity to form a via.

    Magnetoresistive device and method of manufacturing same
    30.
    发明授权
    Magnetoresistive device and method of manufacturing same 有权

    公开(公告)号：US09865804B2

    公开(公告)日：2018-01-09

    申请号：US15630377

    申请日：2017-06-22

    Applicant: Everspin Technologies, Inc.

    Inventor： Sarin A. Deshpande ,  Sanjeev Aggarwal ,  Kerry Joseph Nagel

    IPC: H01L43/12 ,  H01L43/08 ,  G11B5/84 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02

    CPC classification number: H01L43/12 ,  G11B5/84 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

    Abstract: A magnetoresistive-based device and method of manufacturing a magnetoresistive-based device using one or more hard masks. The process of manufacture, in one embodiment, includes patterning a mask over a selected portion of the third layer of ferromagnetic material, wherein the mask is a metal hard mask. Thereafter, etching through the third layer of ferromagnetic material to provide sidewalls of the second synthetic antiferromagnetic structure, through the second tunnel barrier layer to form a second tunnel barrier and provide sidewalls thereof and the second layer of ferromagnetic material to provide sidewalls thereof. Thereafter, etching, through the first tunnel barrier layer to form a first tunnel barrier to provide sidewalls thereof and etching the first layer of ferromagnetic material to provide sidewalls thereof. The process may then include oxidizing the sidewalls of (i) the first tunnel barrier and (ii) the first layer of ferromagnetic material. Thereafter, the metal hard mask may be connected to an electrical conductor.

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