公开(公告)号：US20170201069A1

公开(公告)日：2017-07-13

申请号：US15397868

申请日：2017-01-04

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masahiro HITAKA ,  Yutaka TAKAGI ,  Takahiro SUGIYAMA

IPC: H01S5/12 ,  H01S5/34

CPC classification number: H01S5/12 ,  H01S5/06804 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/34 ,  H01S5/3407 ,  H01S5/3408 ,  H01S5/34313 ,  H01S5/34353

Abstract: A DFB laser element includes an active layer 4 having a multiple quantum well structure including a plurality of well layers 4B having different thicknesses, a diffraction grating layer 6 that is optically coupled to the active layer 4, and a pair of cladding layers with the active layer 4 and the diffraction grating layer 6 interposed therebetween. An effective refractive index of the diffraction grating layer 6 is high, and a thickness of the well layer 4B increases as a distance from the diffraction grating layer 6 increases. In this structure, it is possible to reduce dependence on temperature when the DFB semiconductor laser element is miniaturized.

公开(公告)号：US20240195150A1

公开(公告)日：2024-06-13

申请号：US18286149

申请日：2022-03-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi HIROSE ,  Masahiro HITAKA ,  Hiroki KAMEI ,  Takahiro SUGIYAMA

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/11 ,  H01S5/323

CPC classification number: H01S5/18308 ,  H01S5/04252 ,  H01S5/04256 ,  H01S5/11 ,  H01S5/323

Abstract: A surface-emitting laser device includes a first electrode, a lower cladding layer, an active layer, an upper cladding layer, a relaxation layer, a contacting layer having a bandgap different from that of the upper cladding layer, a second electrode, and a photonic crystal layer provided between the lower cladding layer and the active layer or between the active layer and the upper cladding layer, including a basic region and a plurality of different refractive index regions that differ in refractive index from the basic region and are distributed two-dimensionally in a plane perpendicular to a thickness direction to form a resonance mode of light in the plane. The relaxation layer has a bandgap that is between a bandgap of the upper cladding layer and a bandgap of the contacting layer.

公开(公告)号：US20230369825A1

公开(公告)日：2023-11-16

申请号：US18029141

申请日：2021-09-28

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi HIROSE ,  Hiroki KAMEI ,  Takahiro SUGIYAMA

IPC: H01S5/183 ,  H01S5/11

CPC classification number: H01S5/18305 ,  H01S5/18302 ,  H01S5/11

Abstract: A semiconductor laser element of the present disclosure reducing one-dimensional local oscillation includes a substrate, an active layer, and a phase modulation layer. The phase modulation layer includes a base layer and modified refractive index regions two-dimensionally placed on a reference surface. In a virtual square lattice on the reference surface, the gravity center of each modified refractive index region is placed away from the corresponding lattice point, and an angle of a vector connecting the corresponding lattice point to the gravity center is set individually. A lattice spacing and a light emission wavelength of the active layer satisfy a Γ-point oscillation condition. The gravity center of each modified refractive index region is placed such that the absolute value of the Fourier coefficient of an annular or a circular shape obtained by rotating each modified refractive index region with the corresponding lattice point is 0.01 or less.

公开(公告)号：US20230273015A1

公开(公告)日：2023-08-31

申请号：US18195508

申请日：2023-05-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi HIROSE ,  Hiroki KAMEI ,  Takahiro SUGIYAMA ,  Akiyoshi WATANABE ,  Seiichiro MIZUNO

IPC: G01B11/25

CPC classification number: G01B11/2513

Abstract: A three-dimensional measurement device includes a plurality of light source units configured to irradiate the object to be measured with measurement light having predetermined patterns, an image capture unit configured to capture an image of the object to be measured which is irradiated with the measurement light, and a measurement unit configured to measure a three-dimensional shape of the object to be measured based on results of image capture performed by the image capture unit. The predetermined patterns of the measurement light include stripe patterns, respectively. The stripe patterns radiated from the plurality of light source units have respective patterns different from each other. The plurality of light source units are arrayed in a direction parallel to stripes in the stripe patterns. The measurement unit measures the three-dimensional shape of the object to be measured based on a three-dimensional shape measurement method using the stripe pattern.

公开(公告)号：US20200209653A1

公开(公告)日：2020-07-02

申请号：US16622497

申请日：2018-06-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yuu TAKIGUCHI ,  Kazuyoshi HIROSE ,  Yoshitaka KUROSAKA ,  Takahiro SUGIYAMA ,  Yoshiro NOMOTO ,  Soh UENOYAMA

IPC: G02F1/015 ,  H01S5/00 ,  H01S5/068

Abstract: The present embodiment relates to a light-emitting device that enables reduction in attenuation or diffraction effect caused by a semiconductor light-emitting device with respect to modulated light outputted from a spatial light modulator, and the light-emitting device includes the semiconductor light-emitting device that outputs light from a light output surface and the reflection type spatial light modulator that modulates the light. The spatial light modulator includes a light input/output surface having the area larger than the area of a light input surface of the semiconductor light-emitting device, modulates light taken through a region facing the light output surface of the semiconductor light-emitting device in the light input/output surface, and outputs the modulated light from another region of the light input/output surface to a space other than the light input surface of the semiconductor light-emitting device.

公开(公告)号：US20190181613A1

公开(公告)日：2019-06-13

申请号：US16323625

申请日：2017-08-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Takahiro SUGIYAMA ,  Yuu TAKIGUCHI ,  Yoshiro NOMOTO

IPC: H01S5/183 ,  H01S5/06 ,  H01S5/42 ,  H01S5/343 ,  H01S5/028 ,  H01S5/042

Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.

公开(公告)号：US20170012407A1

公开(公告)日：2017-01-12

申请号：US15115713

申请日：2014-11-10

Applicant: KYOTO UNIVERSITY ,  HAMAMATSU PHOTONICS K.K.

Inventor： Akiyoshi WATANABE ,  Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Takahiro SUGIYAMA ,  Susumu NODA

IPC: H01S5/0683 ,  H01S5/18 ,  H01S5/10 ,  H01S5/022

CPC classification number: H01S5/0683 ,  H01S5/022 ,  H01S5/105 ,  H01S5/18 ,  H01S5/187

Abstract: A surface emitting laser element capable of emitting a main beam and a sub-beam, and a monitoring light detection element capable of detecting a light intensity of the sub-beam are included, the surface emitting laser element is a PCSEL, the main beam and the sub-beam are emitted in an upward direction of the surface emitting laser element and are inclined to each other at a predetermined angle, and respective changes in a peak light intensity of the main beam and a peak light intensity of the sub-beam with respect to a value of a driving current of the surface emitting laser element are correlated with each other. Therefore, if an output of the monitoring light detection element indicating the peak light intensity of the sub-beam is used, the peak light intensity of the main beam can be estimated.

Abstract translation: 包括能够发射主光束和子光束的表面发射激光器元件和能够检测子光束的光强度的监视光检测元件，表面发射激光器元件是PCSEL，主光束和 子光束在表面发射激光器元件的向上方向上发射，并且以预定角度彼此倾斜，并且主光束的峰值光强度和子光束的峰值光强度各自变化， 相对于表面发射激光元件的驱动电流的值彼此相关。 因此，如果使用表示子光束的峰值光强度的监视光检测元件的输出，则可以估计主光束的峰值光强度。

公开(公告)号：US20160020581A1

公开(公告)日：2016-01-21

申请号：US14771911

申请日：2014-02-27

Applicant: KYOTO UNIVERSITY ,  HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi HIROSE ,  Akiyoshi WATANABE ,  Yoshitaka KUROSAKA ,  Takahiro SUGIYAMA ,  Susumu NODA

IPC: H01S5/18 ,  H01S5/10 ,  H01S5/12 ,  H01S5/042

CPC classification number: H01S5/18 ,  H01S3/08009 ,  H01S5/0425 ,  H01S5/105 ,  H01S5/12 ,  H01S5/1231 ,  H01S5/183 ,  H01S5/18319 ,  H01S5/187 ,  H01S2301/14

Abstract: A semiconductor laser element is realized with high beam quality (index M2

Abstract translation: 半导体激光元件实现了高光束质量（指标M2 <1）。 衍射光栅层6的衍射光栅6ba沿主表面2a延伸并设置在衍射光栅层6的p侧表面6a上; 衍射光栅层6的折射率在衍射光栅6ba中沿主表面2a延伸的方向周期性地变化; 衍射光栅6ba具有多个孔6b; 多个孔6b设置在p侧表面6a中并且沿着正方形格子R3平移对称地布置; 多个孔6b各自具有相同的尺寸和形状; 每个孔6b对应于衍射光栅6ba的晶格点，并且具有三棱柱形状; 孔6b的底面6c的形状为近似的直角三角形。

公开(公告)号：US20160020576A1

公开(公告)日：2016-01-21

申请号：US14772459

申请日：2014-03-07

Applicant: KYOTO UNIVERSITY ,  HAMAMATSU PHOTONICS K.K.

Inventor： Akiyoshi WATANABE ,  Kazuyoshi HIROSE ,  Yoshitaka KUROSAKA ,  Takahiro SUGIYAMA ,  Susumu NODA

IPC: H01S5/00 ,  H01S5/022 ,  G02F1/37 ,  G02F1/355 ,  G02F1/35 ,  H01S5/10 ,  H01S5/18

CPC classification number: H01S5/0092 ,  G02F1/3544 ,  G02F1/3551 ,  G02F1/3558 ,  G02F1/37 ,  G02F2001/3548 ,  H01S5/02248 ,  H01S5/02446 ,  H01S5/105 ,  H01S5/18 ,  H01S5/187

Abstract: In a laser device, a different refractive index region 6B of a photonic crystal layer is arranged at a lattice point position of a square lattice. In the case where a plane shape of the different refractive index regions 6B is a nearly isosceles right triangle, two sides forming a right angle extend along longitudinal and horizontal lateral lines of the square lattice. A direction parallel to or vertical to an oblique side of the triangle and a direction of polarization in the periodic polarization inversion structure of a nonlinear optical crystal NL are the same.

Abstract translation: 在激光装置中，将光子晶体层的不同的折射率区域6B配置在正方格子的格子点位置。 在不同折射率区域6B的平面形状是近似等腰直角三角形的情况下，形成直角的两边沿着正方形格子的纵向和横向的横向延伸。 与非线性光学晶体NL的周期极化反转结构中的三角形的倾斜侧平行或垂直的方向和偏振方向相同。