Dispensed electrical interconnections
    22.
    发明申请
    Dispensed electrical interconnections 有权
    分配电气互连

    公开(公告)号:US20070164454A1

    公开(公告)日:2007-07-19

    申请号:US11334922

    申请日:2006-01-19

    申请人: Peter Andrews

    发明人: Peter Andrews

    IPC分类号: H01L23/48

    摘要: An electronic device includes a substrate, an electrical element on the substrate, a nonconductive adhesive material on the substrate, and a conductive adhesive material on the electrical element and extending onto the nonconductive adhesive material. Methods of forming a packaged LED include providing a substrate having an electrical element thereon, and dispensing a nonconductive adhesive material on the substrate. The nonconductive adhesive material is at least partially cured, and a conductive adhesive material is dispensed on the electrical element and on the at least partially cured nonconductive material. The conductive adhesive material is at least partially cured. The conductive adhesive material may provide an electrical connection between the electrical element and a second electrical element on the substrate or on another substrate.

    摘要翻译: 电子设备包括基板,基板上的电气元件,基板上的非导电粘合剂材料,以及电气元件上的导电粘合剂材料并延伸到非导电粘合剂材料上。 形成封装的LED的方法包括提供其上具有电元件的基板,以及在基板上分配非导电粘合剂材料。 非导电粘合剂材料至少部分固化,并且导电粘合剂材料分配在电气元件上以及至少部分固化的非导电材料上。 导电粘合剂材料至少部分固化。 导电粘合剂材料可以在电气元件和衬底上或另一衬底上的第二电气元件之间提供电连接。

    METHODS OF MANUFACTURING LIGHT EMITTING DIODES INCLUDING BARRIER LAYERS/SUBLAYERS
    23.
    发明申请
    METHODS OF MANUFACTURING LIGHT EMITTING DIODES INCLUDING BARRIER LAYERS/SUBLAYERS 有权
    制造发光二极体的方法,包括障碍层/子层

    公开(公告)号:US20070161137A1

    公开(公告)日:2007-07-12

    申请号:US11688605

    申请日:2007-03-20

    IPC分类号: H01L21/00

    摘要: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

    摘要翻译: 诸如发光二极管的半导体发光器件包括衬底,在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。 阻挡层设置在反射器层上并在反射器层的侧壁上延伸。 多层导电叠层还可以包括在反射器和外延区之间的欧姆层。 阻挡层进一步在欧姆层的侧壁上延伸。 阻挡层还可以延伸到多层导电叠层外的外延区域上。 阻挡层可以制成一系列交替的第一和第二子层。

    Trench cut light emitting diodes and methods of fabricating same
    26.
    发明申请
    Trench cut light emitting diodes and methods of fabricating same 有权
    沟槽切割发光二极管及其制造方法

    公开(公告)号:US20060079082A1

    公开(公告)日:2006-04-13

    申请号:US11273008

    申请日:2005-11-14

    IPC分类号: H01L21/4763

    摘要: A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions. A first trench is formed in the first side of the substrate between the first and second device portions. A second trench is formed in the second side of the substrate between the first and second device portions.

    摘要翻译: 提供了一种使用具有第一和第二相对侧的半导体衬底形成半导体器件的方法,以及在衬底的第二侧上的至少一个器件层,所述至少一个器件层包括第一和第二器件部分。 第一沟槽形成在第一和第二器件部分之间的衬底的第一侧。 第二沟槽形成在第一和第二器件部分之间的衬底的第二侧。