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21.发明授权Automatic plasma processing device and heat treatment device for batch treatment of workpieces 失效自动等离子处理装置和热处理装置，用于批量处理工件
公开(公告)号：US4550242A
公开(公告)日：1985-10-29
申请号：US424287
申请日：1982-09-27
申请人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
发明人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
IPC分类号： H01L21/677 , B23K9/00
CPC分类号： H01L21/67781 , H01L21/67778 , Y10S156/912 , Y10S414/137
摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers are processed with plasma simultaneously. The device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for feeding the cassette to a predetermined position, a replacing mechanism for taking out the wafers from the cassette placed at the predetermined position, a holding frame operable to receive the wafers from the replacing mechanism and hold the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The automatic plasma processing device has a simplified construction and automatically and successively processes a large number of wafers, while at the same time being compact.
摘要翻译： 一种具有基本垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片同时被等离子体处理。 该装置包括适于在其中容纳多个晶片的容器盒，用于将盒子进给到预定位置的进给机构，用于从放置在预定位置的盒子取出晶片的替换机构，可操作以接收 来自替换机构的晶片并保持在其中，用于将保持框架上下移入和移出等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制 上述机制。 自动等离子体处理装置具有简化的结构，并且自动并连续地处理大量晶片，同时紧凑。
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公开(公告)号：US4474642A
公开(公告)日：1984-10-02
申请号：US514793
申请日：1983-07-18
IPC分类号： C23F1/00 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/312 , H01L21/3213 , C23F1/02 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/32139 , H01L21/312
摘要： The invention provides an improved process for providing wirings and electrodes of aluminum film on the surface of a substrate. Instead of the conventional method of directly forming an organic resist layer on the metal film, a remarkable improvement in the fineness and accuracy of patterning is obtained by providing a subsidiary masking layer, mainly composed of silicon dioxide, between the metal film and the organic resist layer; and pattern-wise etching by first etching the subsidiary masking layer through a patterned mask of the organic resist layer with a fluorine-containing etching gas to form a patterned subsidiary masking layer, and then etching the metal film with a chlorine-containing etching gas through the mask of the patterned subsidiary masking layer, followed by final removal of the remaining subsidiary masking layer.
摘要翻译： 本发明提供了一种用于在衬底的表面上提供铝膜的布线和电极的改进方法。 代替在金属膜上直接形成有机抗蚀剂层的常规方法，通过在金属膜和有机抗蚀剂之间设置主要由二氧化硅构成的辅助掩模层，可以显着提高图案的细度和精度 层; 并通过用含氟蚀刻气体通过有机抗蚀剂层的图案化掩模蚀刻辅助掩模层以形成图案化的掩蔽层，然后用含氯蚀刻气体通过蚀刻气体蚀刻金属膜，并进行图案蚀刻 图案化的辅助掩模层的掩模，然后最后去除剩余的辅助掩模层。
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公开(公告)号：US4245154A
公开(公告)日：1981-01-13
申请号：US919856
申请日：1978-06-28
申请人： Akira Uehara , Hiroyuki Kiyota , Hisashi Nakane , Shozo Toda
发明人： Akira Uehara , Hiroyuki Kiyota , Hisashi Nakane , Shozo Toda
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , G02B5/14
CPC分类号： H01J37/32935
摘要： An improved apparatus for plasma treatment of silicon semiconductor wafers is proposed in which the end point of the plasma etching or ashing can be readily detected by monitoring with an optical fiberscope penetrating the wall of the plasma reaction chamber with one terminal located inside the plasma reaction chamber with a condenser lens attached thereto and the other terminal located outside the plasma reaction chamber at a distanced position free from the influence of the high frequency electric field inherent to plasma generation which otherwise interferes with the photoelectric recording by the photocell connected to the outer terminal of the optical fiberscope.
摘要翻译： 提出了一种用于硅半导体晶片的等离子体处理的改进装置，其中等离子体蚀刻或灰化的终点可以通过利用位于等离子体反应室内的一个端子穿透等离子体反应室的壁的光纤穿透镜进行监测来容易地检测 其上安装有聚光透镜，而另一个端子位于等离子体反应室外部的距离位置，不受等离子体产生固有的高频电场的影响，否则会干扰连接到外部端子的光电池的光电记录 光纤镜。
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公开(公告)号：US4045231A
公开(公告)日：1977-08-30
申请号：US658855
申请日：1976-02-18
CPC分类号： G03F7/033 , Y10S430/118
摘要： A photosensitive resin composition for flexographic printing plates comprising styrene-butadiene block copolymer containing 35 - 50% by weight of styrene, at least one liquid prepolymer having a molecular weight of 1,000 - 5,000 selected from the group consisting of polybutadiene and butadiene-styrene copolymer, at least one photopolymerizable monomer containing at least one vinyl group, such as tetraethyleneglycol diacrylate, a photopolymerization initiator such as benzophenone, and a thermopolymerization inhibitor optionally added. This photosensitive resin composition affords relief images suitable for use in flexographic printing.
摘要翻译： 包含苯乙烯 - 丁二烯嵌段共聚物的苯乙烯 - 丁二烯嵌段共聚物，其含有35-50重量％的苯乙烯，至少一种分子量为1,000-5,000的液体预聚物，其选自聚丁二烯和丁二烯 - 苯乙烯共聚物， 至少一种含有至少一种乙烯基的可光聚合单体，如四甘醇二丙烯酸酯，光聚合引发剂如二苯甲酮，以及任选加入的热聚合抑制剂。 该光敏树脂组合物提供适用于柔性版印刷的浮雕图像。
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公开(公告)号：US4550239A
公开(公告)日：1985-10-29
申请号：US424503
申请日：1982-09-27
申请人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
发明人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
IPC分类号： B65G49/07 , H01L21/677 , B23K9/00
CPC分类号： H01L21/67778 , H01L21/67781 , Y10S156/912 , Y10S414/137 , Y10S414/14
摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers can be simultaneously processed with plasma. The automatic plasma processing device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for taking out the wafers one by one from the cassette and for feeding the same, a holding frame for receiving the wafers one by one from the feeding mechanism and for holding the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The device is simplified in construction and can automatically and successively process a large number of wafers, while at the same time having a compact construction.
摘要翻译： 一种具有基本上垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片可以与等离子体同时处理。 自动等离子体处理装置包括适于在其中容纳多个晶片的容器盒，用于从盒中一个接一个地取出晶片并用于馈送的馈送机构，用于从该盒子一个接一个地接收晶片的保持框架 进给机构并保持在其中的驱动机构，用于使保持框架上下移入等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制上述机构的控制系统。 该装置的结构简化，并且可以自动并连续地处理大量的晶片，同时具有紧凑的结构。
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公开(公告)号：US4401745A
公开(公告)日：1983-08-30
申请号：US296358
申请日：1981-08-26
申请人： Hisashi Nakane , Wataru Kanai , Minoru Tsuda
发明人： Hisashi Nakane , Wataru Kanai , Minoru Tsuda
CPC分类号： G03F7/0085 , G03F7/031 , Y10S430/12 , Y10S430/128
摘要： A composition for ultra-fine pattern formation comprising at least one of acrylic and/or vinyl ketone polymers as the major component and an effective amount of an aromatic azide compound and, in another embodiment, further comprising an effective amount of an organic compound having a vinyl group, and a process for ultra-fine pattern formation therewith. In the process, a required area of a film formed from the composition is irradiated with a corpuscular beam or with electromagnetic wave radiation. The aromatic azide compound or a mixture thereof with the aromatic compound having a vinyl group only in the unexposed areas is subjected to a deactivation treatment within the film, and the unexposed areas of the film are removed with a gas plasma to form an ultra-fine pattern. The composition is suitable for use in the ultra-fine pattern formation of a resist for transistors, integrated circuits (IC), large scale integrated circuits (LSI) or the like in the semiconductor industry.
摘要翻译： 一种用于超细图案形成的组合物，其包含丙烯酸和/或乙烯基酮聚合物作为主要组分中的至少一种和有效量的芳族叠氮化合物，并且在另一个实施方案中，还包含有效量的具有 乙烯基，以及与其形成超微细图案的方法。 在该过程中，由组合物形成的膜的所需面积被照射了粒子束或电磁波辐射。 芳族叠氮化合物或其与仅在未曝光区域中具有乙烯基的芳族化合物的混合物在膜内进行钝化处理，并且用气体等离子体除去膜的未曝光区域以形成超细 模式。 该组合物适合用于半导体工业中的晶体管，集成电路（IC），大型集成电路（LSI）等的抗蚀剂的超微细图案形成。
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公开(公告)号：US4277525A
公开(公告)日：1981-07-07
申请号：US133092
申请日：1980-03-24
申请人： Muneo Nakayama , Toshihiro Nishimura , Hisashi Nakane , Shozo Toda , Yoshio Hotta , Mitsuaki Minato
发明人： Muneo Nakayama , Toshihiro Nishimura , Hisashi Nakane , Shozo Toda , Yoshio Hotta , Mitsuaki Minato
IPC分类号： C08G77/00 , C08G77/02 , C08G77/06 , C09D183/00 , C09D183/02 , C09D183/04 , C09D183/14 , B05D3/02
CPC分类号： C09D183/14 , C09D183/02 , C09D183/04
摘要： Liquid compositions suitable for providing silica-based coating films on to various substrate surfaces are prepared by the reaction of an alkoxy-containing silane, a lower carboxylic acid and an alcohol in the presence of a reaction accelerator which is an organic acid different from the above mentioned lower carboxylic acid. The reaction proceeds very smoothly even in the absence of any halogen-containing compounds, and the resultant liquid coating compositions are free from the problem of corrosion due to the presence of a halogen-containing ingredient.
摘要翻译： 适用于在各种基材表面上提供二氧化硅基涂膜的液体组合物是通过含有烷氧基的硅烷，低级羧酸和醇在与上述不同的有机酸的反应促进剂存在下反应来制备的 提到的低级羧酸。 即使不存在任何含卤素化合物，反应也非常顺利，所得到的液体涂料组合物由于含卤素成分的存在而没有腐蚀的问题。
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28.发明授权Liquid coating composition for forming transparent conductive films and a coating process for using said composition 失效用于形成透明导电膜的液体涂料组合物和使用所述组合物的涂布方法
公开(公告)号：US4268539A
公开(公告)日：1981-05-19
申请号：US960652
申请日：1978-11-14
IPC分类号： C03C17/25 , C03C17/27 , C04B41/50 , H01B1/08 , H01B13/00 , B05D5/12 , B05D1/02 , B05D3/02 , C03C17/23
CPC分类号： C04B41/5009 , C03C17/27 , H01B1/08 , C03C2217/215 , C03C2218/11 , C03C2218/322
摘要： A liquid coating composition for formation of a transparent conductive film, which comprises a solution of indium nitrate in a .beta.-diketone or a mixture of a .beta.-diketone and another organic solvent or a reaction product of indium nitrate with a .beta.-diketone, an activator and an organic solvent other than a .beta.-diketone, is disclosed.When this coating composition is coated on a substrate and the coated substrate is heat-treated at a temperature higher than about 350.degree. C., there can be obtained a transparent conductive film having excellent transparency, electrical conductivity and mechanical strength.
摘要翻译： 用于形成透明导电膜的液体涂料组合物，其包含硝酸铟在β-二酮或β-二酮与另一种有机溶剂的混合物中的溶液或硝酸铟与β-二酮的反应产物， 活化剂和除β-二酮以外的有机溶剂。 当将这种涂料组合物涂覆在基材上并且涂覆的基材在高于约350℃的温度下进行热处理时，可以获得具有优异的透明性，导电性和机械强度的透明导电膜。
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公开(公告)号：US4243740A
公开(公告)日：1981-01-06
申请号：US21253
申请日：1979-03-16
申请人： Minoru Tsuda , Yoichi Nakamura , Hideo Nagata , Hisashi Nakane
发明人： Minoru Tsuda , Yoichi Nakamura , Hideo Nagata , Hisashi Nakane
IPC分类号： G03F7/004 , C08F2/00 , C08F2/50 , C08F16/00 , C08F16/34 , C08F16/38 , C08L29/00 , G03F7/039 , H01L21/027 , G03C1/68 , C08F8/00
CPC分类号： G03F7/039 , Y10S430/119 , Y10S522/913
摘要： A sensitive composition comprising polymethyl isopropenyl ketone of limited molecular weight and a compound of a given general formula. The formation of a pattern of less than 1 .mu.m is made possible by employing ultraviolet rays of wave lengths of 100-350 nm in place of those of 350-450 nm utilized in conventional processes. The sensitive composition is highly sensitive to ultraviolet rays in said wave range and reproduces a fine pattern precisely.
摘要翻译： 一种敏感组合物，其包含有限分子量的聚甲基异丙烯基酮和给定通式的化合物。 通过使用波长为100-350nm的紫外线代替常规方法中使用的350-450nm的紫外线，可以形成小于1μm的图案。 敏感组合物对所述波长范围的紫外线高度敏感，精确地再现精细图案。
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公开(公告)号：US4904571A
公开(公告)日：1990-02-27
申请号：US219638
申请日：1988-07-15
CPC分类号： G03F7/425 , H05K3/0073
摘要： A remover solution for photoresist comprising (a) a solvent which is typically water, (b) an inorganic or organic alkaline compound such as sodium and potassium hydroxides, and (c) a borohydride compound such as sodium and lithium borohydrides and organic amine borane compounds. When used for removing patterned photoresist layer in the manufacturing process of, for example, electronic circuit board substrates. The method gives quite satisfactory results without discoloration or denaturation of the copper surface and solder surface, consequently leading to the production of high-quality products.
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