公开(公告)号：US20060207971A1

公开(公告)日：2006-09-21

申请号：US11376163

申请日：2006-03-16

申请人： Tsuyoshi Moriya ,  Takaaki Hirooka ,  Akitaka Shimizu ,  Satoshi Tanaka

发明人： Tsuyoshi Moriya ,  Takaaki Hirooka ,  Akitaka Shimizu ,  Satoshi Tanaka

IPC分类号： C23F1/00 ,  H01L21/306 ,  B44C1/22

CPC分类号： C23F1/12 ,  H01L21/02071 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67775

摘要： An atmospheric transfer chamber, connected to an object processing chamber for processing a target object by using a plasma of a halogen-based gas, for transferring the target object therein, the atmospheric transfer chamber includes a dehumidifying unit for dehumidifying air in the atmospheric transfer chamber. The dehumidifying unit includes a desiccant filter, a cooling unit for cooling the air introduced into the atmospheric transfer chamber, and an air conditioner. The atmospheric transfer chamber is connected to a reaction product removal chamber for removing reaction products of a halogen-based gas attached to the target object, wherein halogen in reaction products attached to the target object is reduced.

摘要翻译： 大气传送室，通过使用卤素系气体的等离子体连接到对象处理室，用于将目标物体转印到其中，大气传送室包括用于对大气传送室中的空气进行除湿的除湿单元 。 除湿单元包括干燥剂过滤器，用于冷却引入大气传送室的空气的冷却单元和空调。 大气转移室连接到反应产物去除室，用于除去附着到目标物体上的卤素系气体的反应产物，其中附着在目标物体上的反应产物中的卤素被还原。

公开(公告)号：US20060163202A1

公开(公告)日：2006-07-27

申请号：US11335662

申请日：2006-01-20

申请人： Akitaka Shimizu ,  Hiromi Oka

发明人： Akitaka Shimizu ,  Hiromi Oka

IPC分类号： C23F1/00 ,  H01L21/306 ,  H01L21/302 ,  B44C1/22 ,  C03C15/00

CPC分类号： H01L21/3086 ,  H01J37/32935 ,  H01L21/3065

摘要： A plasma etching method for etching an object to be processed, which has at least an etching target layer and a patterned mask layer formed on the etching target layer, to form a recess corresponding to a pattern of the mask layer in the etching target layer, includes a first plasma process of forming deposits on the etching target layer at least around a boundary between the etching target layer and the mask layer in an opening portion constituting the pattern of the mask layer, and a second plasma process of forming the recess by etching the etching target layer after the first plasma process. An edge portion of an upper sidewall constituting the recess is rounded off in the second plasma process.

摘要翻译： 一种用于蚀刻被处理物体的等离子体蚀刻方法，其至少具有蚀刻目标层和形成在蚀刻目标层上的图案化掩模层，以形成与蚀刻目标层中的掩模层的图案相对应的凹部， 包括在构成掩模层的图案的开口部分中至少在蚀刻目标层和掩模层之间的边界周围在蚀刻目标层上形成沉积物的第一等离子体工艺，以及通过蚀刻形成凹部的第二等离子体工艺 在第一等离子体处理之后的蚀刻目标层。 构成凹部的上侧壁的边缘部分在第二等离子体工艺中被倒圆。

公开(公告)号：US20060057804A1

公开(公告)日：2006-03-16

申请号：US11224949

申请日：2005-09-14

申请人： Susumu Saito ,  Akitaka Shimizu

发明人： Susumu Saito ,  Akitaka Shimizu

IPC分类号： H01L21/8242

CPC分类号： H01L21/3065 ,  H01L21/308 ,  H01L22/26

摘要： An etching method capable of controlling the film thickness of a hard mask layer uniformly is provided. A plasma etching is performed on a native oxide film by using an etching gas containing, for example, CF4 and Ar while a thickness of a silicon nitride film is being monitored and the etching is finished when the thickness of the silicon nitride film reaches a predetermined value. Then, a plasma etching is performed on a silicon substrate by employing an etching gas containing, for example, Cl2, HBr and Ar and using the silicon nitride film as a mask while a depth of a trench is being monitored and the etching is finished when the depth of the trench reaches a specified value.

摘要翻译： 提供了能够均匀地控制硬掩模层的膜厚的蚀刻方法。 通过使用含有例如CF 4和Ar的蚀刻气体在自然氧化物膜上进行等离子体蚀刻，同时监测氮化硅膜的厚度，并且当厚度 的氮化硅膜达到预定值。 然后，通过使用含有例如Cl 2，HBr和Ar的蚀刻气体，并且使用氮化硅膜作为掩模，在硅衬底上进行等离子体蚀刻，同时沟槽的深度为 被监测并且当沟槽的深度达到特定值时完成蚀刻。

公开(公告)号：US20060037170A1

公开(公告)日：2006-02-23

申请号：US11055726

申请日：2005-02-10

申请人： Akitaka Shimizu

发明人： Akitaka Shimizu

IPC分类号： A47L5/00

CPC分类号： A47L9/0477 ,  A47L2201/00

摘要： A self-propelling cleaner 1 performs dust removal processing in which a comb is brought close to a rotary brush with prescribed timing and dust is removed from the rotary brush. In the dust removal processing, the comb is slid in such a direction as to come closer to the brush, even dust that is stuck to the base portions of bristles of the rotary brush can be removed. A self-propelling cleaner is provided that is free of an event that it performs cleaning in a state that a large amount of dust is stuck to the rotary brush.

摘要翻译： 自推进清洁器1执行除尘处理，其中梳子以规定的时间靠近旋转刷，并且从旋转刷除去灰尘。 在除尘处理中，梳子沿着更靠近刷子的方向滑动，即使能够除去粘附到旋转刷的刷毛的基部的灰尘。 提供了一种自推进清洁器，其在大量的灰尘粘附到旋转刷的状态下没有进行清洁的事件。

公开(公告)号：US20060011580A1

公开(公告)日：2006-01-19

申请号：US11159228

申请日：2005-06-23

申请人： Akitaka Shimizu

发明人： Akitaka Shimizu

IPC分类号： B44C1/22 ,  C23F1/00 ,  C25F5/00

CPC分类号： H01L21/02046 ,  H01L21/02057 ,  H01L21/67167 ,  H01L21/67207

摘要： A plasma processing method and a post-processing method can certainly prevent corrosion not only in a processing chamber but also in a transfer system. The plasma processing method for performing a plasma process on an object to be processed in a chamber includes a first plasma process for processing the object to be processed by a first plasma that is generated by plasmarizing a gas containing at least a halogen element; a second plasma process for processing the chamber and the object to be processed by supplying an oxygen-containing gas in the chamber to generate a second plasma after the first plasma process; and a third plasma process for processing the object to be processed after the second plasma process by using a third plasma that is generated by plasmarizing a gas containing at least nitrogen and hydrogen.

摘要翻译： 等离子体处理方法和后处理方法不仅可以在处理室中而且在转印系统中防止腐蚀。 用于对室内待处理物体进行等离子体处理的等离子体处理方法包括：第一等离子体处理，其通过等离子体化至少包含卤素元素的气体产生的第一等离子体进行处理; 用于通过在所述室中供应含氧气体以在所述第一等离子体处理之后产生第二等离子体来处理所述室和待处理物体的第二等离子体工艺; 以及第三等离子体处理，用于通过使用通过等离子体至少包含氮和氢的气体产生的第三等离子体来在第二等离子体处理之后处理待处理物体。

公开(公告)号：US08236109B2

公开(公告)日：2012-08-07

申请号：US12639586

申请日：2009-12-16

申请人： Tsuyoshi Moriya ,  Akitaka Shimizu

发明人： Tsuyoshi Moriya ,  Akitaka Shimizu

IPC分类号： B08B6/00

CPC分类号： H01L21/02057 ,  H01J37/32862 ,  Y10S438/905 ,  Y10S438/906

摘要： A method for cleaning a component in a substrate processing apparatus including a processing chamber, foreign materials being attached to the component, at least a part of the component being exposed inside the processing chamber, and the substrate processing apparatus being adapted to load and unload a foreign material adsorbing member into and from the processing chamber. The method includes loading the foreign material adsorbing member into the processing chamber; generating a plasma nearer the component than the foreign material adsorbing member; extinguishing the plasma; and unloading the foreign material adsorbing member from the processing chamber, wherein the generation and the extinguishment of the plasma are repeated alternately and the foreign material adsorbing member has a positive potential at least during the extinguishment of the plasma.

摘要翻译： 一种清洗基板处理装置中的部件的方法，所述基板处理装置包括处理室，异物附着在所述部件上，所述部件的至少一部分暴露在所述处理室内部，所述基板处理装置适于加载和卸载 异物吸附构件进出处理室。 该方法包括将异物吸附构件装载到处理室中; 产生比异物吸附部件更靠近部件的等离子体; 熄灭等离子体; 并且从所述处理室卸载所述异物吸附构件，其中所述等离子体的产生和熄灭交替地重复，并且所述异物吸附构件至少在所述等离子体熄灭期间具有正电位。

公开(公告)号：US20110155322A1

公开(公告)日：2011-06-30

申请号：US12979875

申请日：2010-12-28

申请人： Shinji HIMORI ,  Daisuke Hayashi ,  Akitaka Shimizu

发明人： Shinji HIMORI ,  Daisuke Hayashi ,  Akitaka Shimizu

IPC分类号： C23F1/08

CPC分类号： H01L21/67069 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32577 ,  H01J37/32605

摘要： A plasma processing apparatus includes a processing chamber in which a target substrate is processed; an application electrode and a facing electrode provided to face each other in the processing chamber, a plasma generation space being formed between the application electrode and the facing electrode; and an RF power supply connected to the application electrode, an RF power being supplied from the RF power supply to the application electrode. At least one of the application electrode and the facing electrode includes a base formed of a metal, and a dielectric body inserted into the base, one or more metal plate electrodes being buried in the dielectric body.

摘要翻译： 等离子体处理装置包括：处理室，其中处理目标基板; 在处理室中设置成面对的施加电极和对置电极，在施加电极和对置电极之间形成等离子体产生空间; 以及连接到施加电极的RF电源，RF电力从RF电源提供给施加电极。 施加电极和对置电极中的至少一个包括由金属形成的基底和插入到基底中的电介质体，一个或多个金属板电极被埋在电介质体内。

公开(公告)号：US07824931B2

公开(公告)日：2010-11-02

申请号：US12511749

申请日：2009-07-29

申请人： Susumu Saito ,  Akitaka Shimizu

发明人： Susumu Saito ,  Akitaka Shimizu

IPC分类号： H01L21/66

CPC分类号： H01L21/67069 ,  H01L21/67242 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a substrate processing control method, a first process acquires a first-reflectance-spectrum of a beam reflected from the first-fine-structure and a second-reflectance-spectrum of a beam reflected from the second-fine-structure for each of varying-pattern-dimensions of the first-fine-structure when the pattern-dimension of the first-fine-structure is varied. A second process acquires reference-spectrum-data for each of the varying-pattern-dimensions of the first-fine-structure by overlapping the first-reflectance-spectrum with the second-reflectance-spectrum. A third process actually measures beams reflected from the first and the second-fine-structure, respectively, after irradiating light beam on to the substrate and acquiring reflectance-spectrums of the actual-measured beams as actual-measured spectrum data. A fourth process compares the actual-measured spectrum data with the respective reference-spectrum data and acquiring, as the measured pattern-dimension, one of the varying-pattern-dimensions corresponding to reference-spectrum data that is closely matches with the actual-measured spectrum data. A final process ends the processing of the substrate if the measured pattern-dimension reaches a value.

摘要翻译： 在基板处理控制方法中，第一处理取得从第一微细结构反射的光束的第一反射光谱和从第二微细结构反射的光束的第二反射光谱， 当第一微细结构的图案尺寸变化时，第一微细结构的图案尺寸。 第二过程通过将第一反射光谱与第二反射光谱重叠来获取第一精细结构的每个变化图形尺寸的参考光谱数据。 第三处理实际上是在将光束照射到衬底上之后分别测量从第一和第二微细结构反射的光束，并且将实测光束的反射光谱作为实测光谱数据进行测量。 第四个过程将实际测量的频谱数据与相应的参考频谱数据进行比较，并且将与参考频谱数据相对应的变化模式维度中的一个与实际测量的频谱数据紧密匹配，作为测量的模式维度 频谱数据。 如果测量的图案尺寸达到一个值，则最后的处理结束衬底的处理。

公开(公告)号：US20100206846A1

公开(公告)日：2010-08-19

申请号：US12706094

申请日：2010-02-16

申请人： Eiichi Nishimura ,  Masato Morishima ,  Morihiro Takanashi ,  Akitaka Shimizu ,  Yuichi Setsuhara

发明人： Eiichi Nishimura ,  Masato Morishima ,  Morihiro Takanashi ,  Akitaka Shimizu ,  Yuichi Setsuhara

IPC分类号： C23F1/08 ,  C23C16/00 ,  C23C16/505 ,  C23F1/00

CPC分类号： H01L21/31138 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/505 ,  G03F7/427 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/0273

摘要： A substrate processing apparatus that can appropriately carry out desired plasma processing on a substrate. The substrate is accommodated in an accommodating chamber. An ion trap partitions the accommodating chamber into a plasma producing chamber and a substrate processing chamber. High-frequency antennas are disposed in the plasma producing chamber. A process gas is introduced into the plasma producing chamber. The substrate is mounted on a mounting stage disposed in the substrate processing chamber, and a bias voltage is applied to the mounting stage. The ion trap has grounded conductors and insulating materials covering surfaces of the conductors.

摘要翻译： 能够适当地进行基板上的等离子体处理的基板处理装置。 基板容纳在容纳室中。 离子阱将容纳室分隔成等离子体产生室和基板处理室。 高频天线设置在等离子体产生室中。 将工艺气体引入等离子体产生室。 基板安装在设置在基板处理室中的安装台上，并且偏压被施加到安装台。 离子阱具有接地导体和覆盖导体表面的绝缘材料。

公开(公告)号：US07432172B2

公开(公告)日：2008-10-07

申请号：US11335662

申请日：2006-01-20

申请人： Akitaka Shimizu ,  Hiromi Oka

发明人： Akitaka Shimizu ,  Hiromi Oka

IPC分类号： H01L21/76 ,  H01L21/311

CPC分类号： H01L21/3086 ,  H01J37/32935 ,  H01L21/3065

摘要： A plasma etching method for etching an object to be processed, which has at least an etching target layer and a patterned mask layer formed on the etching target layer, to form a recess corresponding to a pattern of the mask layer in the etching target layer, includes a first plasma process of forming deposits on the etching target layer at least around a boundary between the etching target layer and the mask layer in an opening portion constituting the pattern of the mask layer, and a second plasma process of forming the recess by etching the etching target layer after the first plasma process. An edge portion of an upper sidewall constituting the recess is rounded off in the second plasma process.

摘要翻译： 一种用于蚀刻被处理物体的等离子体蚀刻方法，其至少具有蚀刻目标层和形成在蚀刻目标层上的图案化掩模层，以形成与蚀刻目标层中的掩模层的图案相对应的凹部， 包括在构成掩模层的图案的开口部分中至少在蚀刻目标层和掩模层之间的边界周围在蚀刻目标层上形成沉积物的第一等离子体工艺，以及通过蚀刻形成凹部的第二等离子体工艺 在第一等离子体处理之后的蚀刻目标层。 构成凹部的上侧壁的边缘部分在第二等离子体工艺中被倒圆。