摘要:
According to one embodiment, the semiconductor element includes a first semiconductor layer. The first semiconductor layer contains AlXGa1-XN. A top layer of the first semiconductor layer is terminated by nitrogen. The semiconductor element includes a second semiconductor layer containing non-doped or first conductivity-type AlYGa1-YN formed on the first semiconductor layer. The semiconductor element includes a third semiconductor layer containing AlZGa1-ZN formed on the second semiconductor layer. The semiconductor element includes a first major electrode connected to the third semiconductor layer. The semiconductor element includes a second major electrode connected to the third semiconductor layer. The semiconductor element includes a gate electrode provided on the third semiconductor layer between the first major electrode and the second major electrode.
摘要:
An information center has an all-road updating data and a main-road updating data. The all-road updating data is a difference of all roads extracted from an all-road map data, and the main-road updating map data is a difference of specified roads extracted from the all-road map data. A map display system executes a reverse-updating to return the map data to a previous state not updated with the main-road updated map data, when its map data has already been updated with the main-road updated map data. The map display system then executes updating of the map data with the all-road updated map data.
摘要:
This invention provides a light-emitting element that comprises a light-emitting portion made of a nitride semiconductor; and a first wavefront converter for converting the radiated shape of light that is emitted from the light-emitting portion into a radiated shape that is smaller than the wavelength thereof, and emitting the same as output light. In this case, the first wavefront converter has a small aperture of a diameter that is smaller than the wavelength of light that is emitted from the light-emitting portion. If the output light is made to comprise an evanescent wave that is emitted to the exterior through this small aperture, it is possible to obtain an extremely small light spot. This invention also relates to a surface-emitting type of light-emitting element comprising a multi-layered structure comprising a light-emitting layer; and a pair of electrodes for supplying a current to the light-emitting layer; wherein output light is emitted from a light-emitting surface on top of the multi-layered structure; and the pair of electrodes are recessed from the light-emitting surface to the light-emitting layer side. This makes it possible to bring the light-emitting surface extremely close to an object to be illuminated. The small aperture can be opened up in a self-aligning manner by using the light from the light-emitting portion. As a result, it is possible to provide a light-emitting element and a method of fabrication thereof that create beam characteristics that are suitable for use with an optical disc or the like.
摘要:
When a vehicle is within a predetermined distance from an intersection during the execution of navigation operations, a navigation system displays an enlarged guide map of the same intersection. The guide map shows direction labels that are set for roads that are connected to a road to be approached by the vehicle. The direction labels are set for the connecting roads by tracking the connecting roads and by determining appropriate direction labels following a predetermined procedure. For example, names of tollgates, names of stations, names of special facilities, names of administrative units, names of highways or the like may be set as direction labels.
摘要:
A gallium nitride (GaN)-based semiconductor device comprises a substrate, a single-crystal layer consisting mainly of GaN with a magnesium (Mg) concentration of N.sub.bg1 cm.sup.-3, the single-crystal layer being provided near the substrate and having a thickness of d.sub.1 .mu.m, and a semiconductor layer consisting mainly of Ga.sub.1-x Al.sub.x N having an Al composition x of at least 0.02 and not higher than 1 and having a thickness of d.sub.2 .mu.m. The single-crystal layer is situated between the substrate and the semiconductor layer, and Mg is added to the semiconductor layer at a concentration of N.sub.Mg cm.sup.-3. The Al composition x, the concentration N.sub.Mg, the concentration N.sub.bg1, the thickness d.sub.1 and the thickness d.sub.2 have the following relationshipd.sub.1 /(1600.times.x) N.sub.bg1, N cm.sup.-3 =N.sub.Mg -N.sub.bg1, and when N.sub.Mg .ltoreq.N.sub.bg1, N is equal to an Mg background level in additive-free Ga.sub.1-x Al.sub.x N.
摘要:
The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.
摘要:
Map data includes, for each of multiple links used for representing a road in a map, a link record and a speed limit record for a certain link. The link records and the speed limit records of the multiple links for representing a road are collected to form separate data lists of respective attribute types, that is, a link record data list and a speed limit record data list, instead of collecting records by a unit of each link. The map data structured as separate attribute data lists of respective attribute data types for links in the map data, for example, establishes inter-attribute data association between different attribute data types for the certain link based on the arrangement orders of the respective attribute data types in the data list indicative of the same arrangement order of the multiple links.
摘要:
Map data includes, for each of multiple links used for representing a road in a map, a link record and a speed limit record for a certain link. The link records and the speed limit records of the multiple links for representing a road are collected to form separate data lists of respective attribute types, that is, a link record data list and a speed limit record data list, instead of collecting records by a unit of each link. The map data structured as separate attribute data lists of respective attribute data types for links in the map data, for example, establishes inter-attribute data association between different attribute data types for the certain link based on the arrangement orders of the respective attribute data types in the data list indicative of the same arrangement order of the multiple links.