公开(公告)号：US5838028A

公开(公告)日：1998-11-17

申请号：US861640

申请日：1997-05-22

申请人： Hideyoshi Horie ,  Toshinari Fujimori ,  Satoru Nagao ,  Hideki Gotoh

发明人： Hideyoshi Horie ,  Toshinari Fujimori ,  Satoru Nagao ,  Hideki Gotoh

IPC分类号： H01L21/306 ,  H01L33/02 ,  H01L33/14 ,  H01L33/30 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/038

CPC分类号： H01S5/2231 ,  H01L21/30612 ,  H01L33/02 ,  H01L33/145 ,  H01L33/30 ,  H01S5/204 ,  H01S5/209 ,  H01S5/222 ,  H01S5/2275 ,  H01S5/3211 ,  H01S5/32316

摘要： The invention provides a semiconductor device having a structure wherein a layer comprising at least Al.sub.W Ga.sub.1-W As is formed on a substrate and a second etching stop layer, a first etching stop layer and a layer comprising Al.sub.Y Ga.sub.1-Y As are deposited on the layer comprising Al.sub.W Ga.sub.1-W As in the described order, with a portion of the layer comprising Al.sub.Y G.sub.1-Y As and a portion of the first etching stop layer being removed. This structure enables a desired ridge shape to be fabricated with good quality and allows for free selection of the Al mixed crystal ratio of the layer to be etched, and makes it possible to form the re-growth interface of GaAs. Thus, the qualty of crystal of the re-grown portion can be improved.

摘要翻译： 本发明提供了一种半导体器件，其结构是将至少包含AlWGa1-WAs的层形成在衬底上，并且第二蚀刻停止层，第一蚀刻停止层和包含AlYGa1-YAs的层沉积在包含AlWGa1-WAs的层上， 所述顺序的WAs，其中包含AlYG1-YAs的层的一部分和第一蚀刻停止层的一部分被去除。 该结构能够以良好的质量制造所需的脊形，并允许自由选择待蚀刻层的Al混晶比，并且可以形成GaAs的再生长界面。 因此，可以提高再生长部分的晶体的质量。

公开(公告)号：US20090315045A1

公开(公告)日：2009-12-24

申请号：US12299253

申请日：2007-04-30

申请人： Hideyoshi Horie

发明人： Hideyoshi Horie

IPC分类号： H01L33/00

CPC分类号： H01L27/153

摘要： An integrated compound semiconductor light-emitting-device capable of emitting light as a large-area plane light source, exhibiting excellent in-plane uniformity in an emission intensity is provided. The light-emitting-device comprising a plurality of light-emitting-units formed over a substrate, wherein the light-emitting-unit has a compound semiconductor thin-film crystal layer 24, 25, 26 a first and a second-conductivity-type-side electrode 27, 28; a main light-extraction direction is the side of the substrate, and the first and the second-conductivity-type-side electrode are formed on the opposite side to the light-extraction direction; the light-emitting-units are electrically separated each other by a light-emitting-unit separation-trench which is formed by removing the thin-film crystal layer from the surface to an inside portion of the buffer layer.

摘要翻译： 提供了能够发光作为大面积平面光源的综合化合物半导体发光装置，其表现出优异的发射强度的面内均匀性。 该发光装置包括在基板上形成的多个发光单元，其中，发光单元具有化合物半导体薄膜晶体层24,25,26，第一和第二导电型 侧电极27,28; 主要的光提取方向是基板的一侧，并且第一和第二导电型侧电极形成在与光提取方向相反的一侧上; 发光单元由通过从缓冲层的表面到内部部分去除薄膜晶体层而形成的发光单元分离沟槽彼此电分离。

公开(公告)号：US20090026488A1

公开(公告)日：2009-01-29

申请号：US11816553

申请日：2006-02-08

申请人： Kazumasa Kiyomi ,  Hideyoshi Horie ,  Toshio Ishiwatari ,  Isao Fujimura

发明人： Kazumasa Kiyomi ,  Hideyoshi Horie ,  Toshio Ishiwatari ,  Isao Fujimura

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： C23C16/34 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/007

摘要： A nitride semiconductor material comprising a semiconductor or dielectric substrate having thereon a first nitride semiconductor layer group, wherein the surface of the first nitride semiconductor layer group has an RMS of 5 nm or less, a variation of X-ray half-width within ±30%, a light reflectance of the surface of 15% or more, and a variation thereof of ±10% or less, and the thickness of said first nitride semiconductor layer group is 25 μm or more. This nitride semiconductor material is excellent in uniformity and stability, assured of a low production cost, and useful as a substrate for a nitride semiconductor-type device.

摘要翻译： 一种氮化物半导体材料，包括其上具有第一氮化物半导体层组的半导体或电介质衬底，其中所述第一氮化物半导体层组的表面具有5nm或更小的RMS，X射线半值的变化在±30 ％，表面的光反射率为15％以上，其变化为±10％以下，第一氮化物半导体层组的厚度为25μm以上。 该氮化物半导体材料的均匀性和稳定性优异，生产成本低，可用作氮化物半导体型器件的基板。

公开(公告)号：US06744074B2

公开(公告)日：2004-06-01

申请号：US09968802

申请日：2001-10-03

申请人： Hideyoshi Horie ,  Hirotaka Ohta ,  Toshinari Fujimori

发明人： Hideyoshi Horie ,  Hirotaka Ohta ,  Toshinari Fujimori

IPC分类号： H01L3300

CPC分类号： H01L33/44 ,  B82Y20/00 ,  H01L33/0045 ,  H01S5/0021 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0282 ,  H01S5/16 ,  H01S5/162 ,  H01S5/164 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/34313 ,  H01S5/34353

摘要： Compound semiconductor light emitting devices capable of suppressing the surface state density on the facets of semiconductor light emitting devices such as semiconductor lasers for a long time and stable operating even when the passivation layer diffuses can be easily obtained. Compound semiconductor light emitting devices with an emission wavelength of &lgr; (nm) wherein a first conduction type of clad layer, an active layer and a second conduction type of clad layer are grown on a substrate and two facets are opposite to each other so as to form a cavity, characterized in that said active layer is transparent to the emission wavelength in the vicinities of the facets and that the surfaces of the first conduction type of clad layer, active layer and second conduction type of clad layer forming said facets are each coated with a passivation layer.

摘要翻译： 即使钝化层扩散，也能够长时间地抑制半导体激光器等半导体发光元件的面的表面状态密度，即使钝化层扩散也能够稳定地工作的化合物半导体发光元件。 发光波长为λ（nm）的化合物半导体发光器件，其中在衬底上生长第一导电类型的包层，有源层和第二导电类型的包层，并且两个面彼此相对，从而 形成空腔，其特征在于，所述有源层对于小面附近的发射波长是透明的，并且形成所述小面的第一导电类型的包覆层，有源层和第二导电类型的覆盖层的表面各自被涂覆 具有钝化层。

公开(公告)号：US06677618B1

公开(公告)日：2004-01-13

申请号：US09453279

申请日：1999-12-03

申请人： Hideyoshi Horie ,  Hirotaka Ohta ,  Toshinari Fujimori

发明人： Hideyoshi Horie ,  Hirotaka Ohta ,  Toshinari Fujimori

IPC分类号： H01L3300

CPC分类号： H01L33/44 ,  H01L33/30 ,  H01S5/0282

摘要： Disclosed compound semiconductor light emitting devices have a substrate, a compound semiconductor layer, formed on the substrate, containing a first conductive type clad layer, an active layer, and a second conductive type clad layer, and a resonator structure formed of two opposing facets of the compound semiconductor layer, wherein surfaces of the first conductive type clad layer, the active layer, and the second conductive type clad layer forming the facet of the compound semiconductor are covered with a passivation layer, wherein at least one element constituting the facet of the compound semiconductor layer is not coupled to oxygen, and wherein a portion of the passivation layer adjacent to the facet of the compound semiconductor layer contains oxygen as a structural element. The compound semiconductor light emitting devices according to the invention can stably suppress, for a long time, the surface state densities on the facets occurring on extrinsic causes, and are high performance devices with establishing both of a high output and a long lifetime.

摘要翻译： 公开的化合物半导体发光器件具有形成在基板上的基板，化合物半导体层，其包含第一导电型覆盖层，有源层和第二导电型覆盖层，以及由两个相对的面 化合物半导体层，其中形成化合物半导体的面的第一导电型覆盖层，有源层和第二导电型覆盖层的表面被钝化层覆盖，其中至少一个元件构成 化合物半导体层不与氧结合，并且其中与化合物半导体层的小面相邻的钝化层的一部分含有氧作为结构元素。 根据本发明的化合物半导体发光器件可以长期稳定地抑制在外在原因上产生的面上的表面状态密度，并且是具有高输出和长寿命两者的高性能器件。

公开(公告)号：US06323052B1

公开(公告)日：2001-11-27

申请号：US09095884

申请日：1998-06-11

申请人： Hideyoshi Horie ,  Hirotaka Ohta ,  Toshinari Fujimori

发明人： Hideyoshi Horie ,  Hirotaka Ohta ,  Toshinari Fujimori

IPC分类号： H01L2100

CPC分类号： H01L33/44 ,  B82Y20/00 ,  H01L33/0045 ,  H01S5/0021 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0282 ,  H01S5/16 ,  H01S5/162 ,  H01S5/164 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/34313 ,  H01S5/34353

摘要： Compound semiconductor light emitting devices capable of suppressing the surface state density on the facets of semiconductor light emitting devices such as semiconductor lasers for a long time and stable operating even when the passivation layer diffuses can be easily obtained. Compound semiconductor light emitting devices with an emission wavelength of &lgr; (nm) wherein a first conduction type of clad layer, an active layer and a second conduction type of clad layer are grown on a substrate and two facets are opposite to each other so as to form a cavity, characterized in that said active layer is transparent to the emission wavelength in the vicinities of the facets and that the surfaces of the first conduction type of clad layer, active layer and second conduction type of clad layer forming said facets are each coated with a passivation layer.

摘要翻译： 即使钝化层扩散，也能够长时间地抑制半导体激光器等半导体发光元件的面的表面状态密度，即使钝化层扩散也能够稳定地工作的化合物半导体发光元件。 发光波长为兰姆（nm）的化合物半导体发光器件，其中在衬底上生长第一导电类型的包层，有源层和第二导电类型的包层，并且两个面彼此相对，从而 形成空腔，其特征在于，所述有源层对于小面附近的发射波长是透明的，并且形成所述小面的第一导电类型的包覆层，有源层和第二导电类型的覆盖层的表面各自被涂覆 具有钝化层。

公开(公告)号：US06172998B2

公开(公告)日：2001-01-09

申请号：US08971719

申请日：1997-11-17

申请人： Hideyoshi Horie ,  Toshinari Fujimori ,  Satoru Nagao ,  Hideki Goto

发明人： Hideyoshi Horie ,  Toshinari Fujimori ,  Satoru Nagao ,  Hideki Goto

IPC分类号： H01S319

CPC分类号： B82Y20/00 ,  H01S5/204 ,  H01S5/222 ,  H01S5/2231 ,  H01S5/34313 ,  H01S5/3432

摘要： The present invention relates to a semiconductor laser diode comprising a GaAs substrate and at least a first conduction-type clad layer, an active layer containing In, Ga and As as component elements, a second conduction-type first clad layer, a current block layer and a second conduction-type second clad layer which are deposited on the substrate in order, wherein a current injection region is formed by said current block layer and said second conduction-type second clad layer, the effective refractive index step &Dgr;neff in the horizontal direction is from 2.5×10−3 to 5.0×10−3 at the emission wavelength, and the width W of the current injection region is from 1.5 to 2.5 &mgr;m. The semiconductor laser diode of the present invention is suited for uses where high output and long life-time are required, such as excitation light source for optical fiber amplifiers.

摘要翻译： 本发明涉及包括GaAs衬底和至少第一导电型覆盖层的半导体激光二极管，包含In，Ga和As作为元件的有源层，第二导电型第一覆盖层，电流阻挡层 和第二导电型第二包覆层，其顺序淀积在所述衬底上，其中由所述电流阻挡层和所述第二导电型第二覆盖层形成电流注入区域，在水平方向上的有效折射率梯度DELTAneff 在发射波长处为2.5×10 -3〜5.0×10 -3，电流注入区域的宽度W为1.5〜2.5μm。 本发明的半导体激光二极管适用于需要高输出和长使用寿命的用途，例如用于光纤放大器的激发光源。

公开(公告)号：US5619518A

公开(公告)日：1997-04-08

申请号：US363261

申请日：1994-12-23

申请人： Hideyoshi Horie ,  Yuichi Inoue ,  Kenji Shimoyama ,  Nobuyuki Hosoi ,  Goto Hideki

发明人： Hideyoshi Horie ,  Yuichi Inoue ,  Kenji Shimoyama ,  Nobuyuki Hosoi ,  Goto Hideki

IPC分类号： H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S3/19

CPC分类号： H01S5/20 ,  H01S5/2004 ,  H01S5/204 ,  H01S5/2206 ,  H01S5/2275 ,  H01S5/3211 ,  H01S5/3216

摘要： The disclosure described a semiconductor laser diode comprising at least a first clad layer, an active layer and a second clad layer disposed in this order on the substrate, anda buried layer for current blocking disposed at both sides in the cavity direction of the active layer,at least one of the first clad layer and second clad layer having at least one superlattice in the direction parallel with the substrate, and the average refractive index (nc1) of the first clad layer, the refractive index (na) of the active layer and the average refractive index (nc2) of the second clad layer satisfying the following equations.na>nc1 (1)na>nc2 (2)

摘要翻译： 本公开描述了一种半导体激光二极管，其包括至少第一覆盖层，有源层和第二覆盖层，其依次布置在衬底上，以及用于电流阻挡的掩埋层，设置在有源层的空腔方向的两侧 所述第一覆盖层和所述第二覆盖层中的至少一个在与所述基板平行的方向上具有至少一个超晶格，并且所述第一覆盖层的平均折射率（nc1），所述有源层的折射率（na） 和第二包层的平均折射率（nc2）满足以下等式。 na> nc1（1）na> nc2（2）

公开(公告)号：US5566198A

公开(公告)日：1996-10-15

申请号：US380836

申请日：1995-01-30

申请人： Hideyoshi Horie ,  Toshinari Fujimori ,  Satoru Nagao ,  Nobuyuki Hosoi ,  Hideki Goto

发明人： Hideyoshi Horie ,  Toshinari Fujimori ,  Satoru Nagao ,  Nobuyuki Hosoi ,  Hideki Goto

IPC分类号： H01L33/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S3/18

CPC分类号： H01L33/0062 ,  H01S5/2231 ,  H01S5/209 ,  H01S5/2206 ,  H01S5/2209 ,  H01S5/2275

摘要： The disclosure describes a method of forming a groove in a structure of a semiconductor laser diode, which comprises a crystal growth procedure of epitaxial growth of a core layer comprising MP, wherein M represents one or more of elements belonging to group IIIb of periodic table and an upper layer comprising MAs, wherein M represents one or more of elements belonging to group IIIb of periodic table, successively on (100) surface of MAs crystals in a lower layer comprising MAs; a photolithography and wet etching procedure of, after forming an etching mask on the upper layer, forming an etching window to the etching mask; a first etching procedure of selective etching the upper layer; and a second etching procedure of selective etching other faces except for the face in which (111) face of MP crystals in the core layer is exposed.