公开(公告)号：US08705270B2

公开(公告)日：2014-04-22

申请号：US13415662

申请日：2012-03-08

申请人： Masahiro Takahashi ,  Yoshihiro Ueda

发明人： Masahiro Takahashi ,  Yoshihiro Ueda

IPC分类号： G11C11/00 ,  G11C11/16

CPC分类号： G11C11/16 ,  G11C11/1659 ,  G11C11/1675

摘要： A semiconductor memory has a first switch circuit and a second switch circuit. The semiconductor memory has a row decoder that controls a voltage of a word line. The semiconductor memory has a first writing circuit including a first signal terminal connected to one end of the first switch circuit to input and output a writing current. The semiconductor memory has a second writing circuit including a second signal terminal connected to a one end of the second switch circuit to input and output the writing current. The semiconductor memory has a select transistor including a control terminal connected to the word line. The semiconductor memory has a resistance change element that is connected in series with the select transistor between the first bit line and the second bit line and varies in resistance value depending on an applied current.

摘要翻译： 半导体存储器具有第一开关电路和第二开关电路。 半导体存储器具有控制字线电压的行解码器。 半导体存储器具有第一写入电路，该第一写入电路包括连接到第一开关电路的一端的第一信号端子，以输入和输出写入电流。 半导体存储器具有第二写入电路，该第二写入电路包括连接到第二开关电路的一端的第二信号端子，以输入和输出写入电流。 半导体存储器具有包括连接到字线的控制端的选择晶体管。 半导体存储器具有与第一位线和第二位线之间的选择晶体管串联连接的电阻变化元件，并根据所施加的电流而变化电阻值。

公开(公告)号：US20130195730A1

公开(公告)日：2013-08-01

申请号：US13824762

申请日：2011-10-26

申请人： Nobutaka Ohya ,  Noriya Tokunaga ,  Tetsuo Hayase ,  Masahiro Takahashi

发明人： Nobutaka Ohya ,  Noriya Tokunaga ,  Tetsuo Hayase ,  Masahiro Takahashi

IPC分类号： B01J10/00

CPC分类号： B01J10/00 ,  B01J19/006 ,  B01J19/2405 ,  B01J19/2415 ,  B01J2219/00094 ,  B01J2219/00247 ,  B01J2219/00772 ,  B01J2219/00779 ,  C10L3/108 ,  F28G1/06 ,  F28G3/08 ,  F28G7/00

摘要： To enable long-term continuous operation by preventing blocking of a reaction pipe line disposed in a multi-pipe or double-walled-pipe heat exchanger, provided is a device for producing gas hydrate including a multi-pipe or double-walled-pipe device 1 for generating gas hydrate having a reaction pipe line 2 for flowing raw material water w and raw material gas g and a coolant circulation region 3 for circulating a coolant c and thereby cooling the reaction pipe line 2, wherein a coil spring 4 extending in the longitudinal direction of the reaction pipe line 2 is provided in the reaction pipe line 2.

摘要翻译： 为了能够通过防止多管或双壁管式热交换器中的反应管路的堵塞来实现长期的连续运转，提供了一种生产包括多管或双壁管装置的气体水合物的装置 1，用于产生具有用于使原料水w和原料气体g流动的反应管线2的气体水合物和用于使冷却剂c循环的冷却剂循环区域3，从而冷却反应管线2，其中螺旋弹簧4在 反应管线2的长度方向设置在反应管线2中。

公开(公告)号：US08498144B2

公开(公告)日：2013-07-30

申请号：US13191678

申请日：2011-07-27

申请人： Masahiro Takahashi ,  Katsuyuki Fujita ,  Yoshihiro Ueda ,  Katsuhiko Hoya

发明人： Masahiro Takahashi ,  Katsuyuki Fujita ,  Yoshihiro Ueda ,  Katsuhiko Hoya

IPC分类号： G11C11/00 ,  G11C11/15

CPC分类号： G11C8/10 ,  G11C8/08 ,  G11C11/1675 ,  G11C11/1693

摘要： A semiconductor storage device includes first to fourth switch circuit. The semiconductor storage device includes a row decoder which controls a voltage of a word line. The semiconductor storage device includes a first selection transistor of which a control terminal is connected to the word line. The semiconductor storage device includes a first resistance change element which is connected in series to the first selection transistor between the first bit line and the second bit line, and of which a resistance value changes according to a flowing current. The semiconductor storage device includes a second selection transistor of which a control terminal is connected to the word line. The semiconductor storage device includes a second resistance change element which is connected in series to the second selection transistor between the second bit line and the third bit line, and of which a resistance value changes according to a flowing current.

摘要翻译： 半导体存储装置包括第一至第四开关电路。 半导体存储装置包括用于控制字线电压的行译码器。 半导体存储装置包括控制端子连接到字线的第一选择晶体管。 半导体存储装置包括与第一位线和第二位线之间的第一选择晶体管串联连接的第一电阻变化元件，其电阻值根据流动电流而变化。 半导体存储装置包括控制端子连接到字线的第二选择晶体管。 半导体存储装置包括与第二位线和第三位线之间的第二选择晶体管串联连接的第二电阻变化元件，其电阻值根据流动电流而变化。

公开(公告)号：US20120228285A1

公开(公告)日：2012-09-13

申请号：US13411913

申请日：2012-03-05

申请人： Masahiro Takahashi

发明人： Masahiro Takahashi

IPC分类号： H05B6/10

CPC分类号： H05B6/145

摘要： A temperature detection unit is arranged in a position between a magnetic field generation coil and a magnetic core that lies inside a heat generation member. A cut portion for exposing the temperature detection unit through the magnetic core has a thickness when seen in a cross section in the direction of a magnetic flux.

摘要翻译： 温度检测单元设置在位于发热构件内部的磁场产生线圈和磁芯之间的位置。 用于通过磁芯暴露温度检测单元的切割部分在沿磁通方向的横截面中看到时具有厚度。

公开(公告)号：US20120097651A1

公开(公告)日：2012-04-26

申请号：US13279905

申请日：2011-10-24

申请人： Masahiro Takahashi ,  Tsukasa Hagihara

发明人： Masahiro Takahashi ,  Tsukasa Hagihara

IPC分类号： B23K26/00

CPC分类号： B23K26/244 ,  B23K33/00 ,  B23K2101/18 ,  B23K2101/34 ,  B23K2103/04 ,  B23K2103/08

摘要： A laser lap welding method for parts made of galvanized steel sheet includes steps of: press-forming two parts from galvanized steel sheet such that the two parts include elongated joining regions to be welded together on mutually opposed surfaces thereof and a plurality of protrusions are formed on at least any one of the joining regions of the two parts at predetermined intervals in a longitudinal direction of the joining region; retaining the two parts in a state in which the joining regions are overlapped one on the other such that a gap according to a height of the protrusions is formed between the joining regions; and irradiating a laser onto one surface of the overlapped joining regions of the two parts such that the overlapped joining regions are fused and welded by energy of the laser, and zinc gas produced with fusing is discharged through the gap.

摘要翻译： 用于镀锌钢板的部件的激光搭接焊接方法包括以下步骤：从镀锌钢板上压制两部分，使得两部分包括在其相互相对的表面上被焊接在一起的细长接合区域，并且形成多个突起 在所述接合区域的纵向方向上以预定间隔在所述两个部分中的至少任一个接合区域中; 将两部分保持在接合区域彼此重叠的状态，使得在接合区域之间形成根据突起的高度的间隙; 并且将激光照射到两个部分的重叠接合区域的一个表面上，使得重叠的接合区域被激光的能量熔合和焊接，并且通过该熔融物产生的锌气体通过间隙排出。

公开(公告)号：US08138382B2

公开(公告)日：2012-03-20

申请号：US12449435

申请日：2008-03-28

申请人： Nobuyasu Kanda ,  Masahiro Takahashi ,  Toru Iwasaki

发明人： Nobuyasu Kanda ,  Masahiro Takahashi ,  Toru Iwasaki

IPC分类号： C07C9/04

CPC分类号： C10L3/10 ,  C10L3/108 ,  C10L5/363 ,  C10L5/366

摘要： The composition of raw mixed gas and the gas composition of produced mixed gas hydrate are uniformed as rapidly as possible. The process for producing a mixed gas hydrate comprises the gas hydrate forming step of reacting a mixed gas (g) with water (w) to thereby obtain a gas hydrate in slurry form; the dewatering step of removing the water (w) from the gas hydrate slurry (s); the palletizing step of forming the gas hydrate after water removal into pellets; the freezing step of chilling the gas hydrate pellets (p) to the freezing point or below to thereby freeze the same; and the pressure reduction step of depressurizing the frozen gas hydrate to storage pressure, wherein the mixed gas (g) fed to the gas hydrate forming step is diluted by diluent gas (m) as a constituent of the principal components of the mixed gas (g).

摘要翻译： 原料混合气体的组成和生成的混合气体水合物的气体组成尽可能快地均匀化。 制造混合气体水合物的方法包括使混合气体（g）与水（w）反应的气体水合物形成步骤，从而获得浆料形式的气体水合物; 从气体水合物浆料中除去水（w）的脱水步骤; 在去除颗粒之后形成气体水合物的码垛步骤; 将气体水合物丸粒（p）冷冻至凝固点或更低温度以使其冷冻的冷冻步骤; 以及将冷冻气体水合物减压至储存压力的减压步骤，其中供给到气体水合物形成步骤的混合气体（g）作为混合气体的主要成分（g）的稀释气体（m）稀释 ）。

公开(公告)号：US20110084272A1

公开(公告)日：2011-04-14

申请号：US12900136

申请日：2010-10-07

申请人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

发明人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

IPC分类号： H01L29/22 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78618

摘要： An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.

摘要翻译： 目的是提供一种具有良好电特性的薄膜晶体管和包括薄膜晶体管作为开关元件的半导体器件。 薄膜晶体管包括形成在绝缘表面上的栅极电极，栅电极上的栅极绝缘膜，与栅极绝缘膜上的栅电极重叠的氧化物半导体膜，并且包括其中浓度为1或 包含在氧化物半导体中的多种金属高于其他区域，形成在氧化物半导体膜上并与该层接触的一对金属氧化物膜，以及与金属氧化物膜接触的源电极和漏电极 。 金属氧化物膜通过氧化源电极和漏电极中所含的金属而形成。

公开(公告)号：US20110058086A1

公开(公告)日：2011-03-10

申请号：US12946005

申请日：2010-11-15

申请人： Yuji Saitou ,  Mitsuo Okumura ,  Tatsuhito Tabuchi ,  Takeshi Harada ,  Masahiro Takahashi

发明人： Yuji Saitou ,  Mitsuo Okumura ,  Tatsuhito Tabuchi ,  Takeshi Harada ,  Masahiro Takahashi

IPC分类号： H04N5/222

CPC分类号： H04N5/23293 ,  G11B27/329 ,  G11B27/34 ,  H04N5/7605 ,  H04N5/772 ,  H04N5/85 ,  H04N5/907 ,  H04N9/8042 ,  H04N9/8047 ,  H04N9/8063 ,  H04N9/8205 ,  H04N9/8227

摘要： The total imaging time period and recorded volume of each image is displayed in association with the imaging date and time of the image. An imaging information acquiring section acquires information on the imaging dates and times and recorded volumes of images. The acquired information is held in an index table. A period setting part sets the period of a period display. An imaging start position deciding section decides the position corresponding to the imaging start date and time of each image in the period display. An imaging time length deciding section decides the display range of the imaging time length of each image in the period display. A recorded volume length deciding section decides the display range of the recorded volume length of each image. Based on these decision results, an imaging position display creating section creates an imaging position display in which the imaging start positions of the images and the imaging time lengths or the recorded volumes of the images are displayed relative to the period display.

摘要翻译： 与图像的成像日期和时间相关联地显示每个图像的总成像时间段和记录体积。 成像信息获取部分获取关于成像日期和时间以及图像的记录体积的信息。 获取的信息保存在索引表中。 周期设置部分设置周期显示的周期。 成像开始位置决定部判定与周期显示中的各图像的成像开始日期和时间对应的位置。 成像时间长度确定部分确定周期显示中每个图像的成像时间长度的显示范围。 记录音量长度决定部分决定每个图像的记录音量长度的显示范围。 基于这些决定结果，成像位置显示创建部分创建成像位置显示，其中相对于周期显示显示图像的成像开始位置和成像时间长度或图像的记录体积。

公开(公告)号：US20100244292A1

公开(公告)日：2010-09-30

申请号：US12733899

申请日：2007-10-03

申请人： Toru Iwasaki ,  Masahiro Takahashi ,  Takashi Arai ,  Shinji Takahashi ,  Kouhei Takamoto ,  Kenji Ogawa ,  Masafumi Aoba

发明人： Toru Iwasaki ,  Masahiro Takahashi ,  Takashi Arai ,  Shinji Takahashi ,  Kouhei Takamoto ,  Kenji Ogawa ,  Masafumi Aoba

IPC分类号： C10L3/06 ,  B29B9/10

CPC分类号： C10L3/10 ,  B30B11/16 ,  B30B15/308 ,  C10L3/108 ,  C10L5/363

摘要： Provided is a process and an apparatus for producing at low cost gas hydrate pellets having an excellent storability. A gas hydrate generated from a raw-material gas and raw-material water is dewatered and simultaneously molded into pellets with compression-molding means under conditions suitable for generating the gas hydrate while the gas hydrate is generated from the raw-material gas and the raw-material water that exist among particles of the gas hydrate.

摘要翻译： 本发明提供一种具有优异储存性能的低成本天然气水合物颗粒的制造方法和装置。 从原料气体和原料水生成的气体水合物在适于产生气体水合物的条件下脱水并同时用压缩成型装置成型为颗粒，同时从原料气体和原料气体产生气体水合物 - 天然气水合物颗粒中存在的物质水。

公开(公告)号：US20090287028A1

公开(公告)日：2009-11-19

申请号：US12085377

申请日：2006-11-29

申请人： Toru Iwasaki ,  Masahiro Takahashi

发明人： Toru Iwasaki ,  Masahiro Takahashi

IPC分类号： C07C9/04

CPC分类号： C07B63/02 ,  C07B61/00 ,  C07C9/04 ,  C10L3/06 ,  C10L3/108

摘要： Disclosed is a process for production of a gas hydrate, wherein the process comprises a gas hydrate production step, a cooling step, a depressurizing step and a re-cooling step. In the cooling step, the temperature (T) required for the cooling of the gas hydrate is adjusted to a temperature equal to or higher than a cooling limit temperature (t1+t2) (which is a sum of an equilibrium temperature (t1) of the gas hydrate and a temperature for correction (t2)) and equal to or lower than the freezing point (0° C.).

摘要翻译： 公开了一种生产天然气水合物的方法，其中该方法包括气体水合物生产步骤，冷却步骤，减压步骤和再冷却步骤。 在冷却步骤中，将气体水合物的冷却所需的温度（T）调节至等于或高于冷却极限温度（t1 + t2）的温度（其为平均温度（t1） 气体水合物和用于校正的温度（t2））并且等于或低于冰点（0℃）。