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44 条记录 (耗时 0.034 秒)

    Method for molecular-beam epitaxial growth
    23.
    发明授权
    Method for molecular-beam epitaxial growth 失效
    分子束外延生长方法

    公开(公告)号：US5120393A

    公开(公告)日：1992-06-09

    申请号：US639788

    申请日：1991-01-10

    申请人： Minoru Kubo ,  Tadashi Narusawa

    发明人： Minoru Kubo ,  Tadashi Narusawa

    IPC分类号： C30B23/08 ,  C30B23/02 ,  H01L21/203

    CPC分类号： C30B23/02 ,  Y10S148/006 ,  Y10S148/046 ,  Y10S148/048 ,  Y10S148/169

    摘要： Flatness of atomic-accuracy is achieved in an MBE epitaxial growth process by imparting kinetic energy to atoms absorbed on a substrate by means of irradiation by ion-beam for surface bombardment. Ion-beam surface bombardment may also be used for evaluation. The molecular-beam for epitaxial growth and the ion bombardment for surface energization and surface evaluation may all be operated in a pulse mode and synchronized so that evaluation and growth are conducted alternately while growth and energization are conducted simultaneously.

    摘要翻译： 在MBE外延生长过程中，通过用离子束照射表面轰击的吸收在基底上的原子赋予原子精度的平坦度。 离子束表面轰击也可用于评估。 用于外延生长的分子束和用于表面激励和表面评估的离子轰击都可以以脉冲模式操作并且同步，使得评估和生长在同时进行生长和通电的同时进行。

    Optical head and recording and/or reproducing apparatus employing same
    24.
    发明授权
    Optical head and recording and/or reproducing apparatus employing same 失效
    光头以及使用其的记录和/或再现装置

    公开(公告)号：US07248544B2

    公开(公告)日：2007-07-24

    申请号：US10849158

    申请日：2004-05-20

    申请人： Masahiro Saito ,  Norio Fukasawa ,  Kiyoshi Toyota ,  Junichi Suzuki ,  Minoru Kubo ,  Souichi Murakami

    发明人： Masahiro Saito ,  Norio Fukasawa ,  Kiyoshi Toyota ,  Junichi Suzuki ,  Minoru Kubo ,  Souichi Murakami

    IPC分类号： G11B7/00

    CPC分类号： G11B7/1275 ,  G11B7/131 ,  G11B7/1353 ,  G11B7/1359 ,  G11B7/1395 ,  G11B7/22

    摘要： Disclosed is an optical head in which position adjustment of a photodetector light receiving surface or component parts may be simplified, production costs may be reduced and operational reliability may be improved. The optical head includes a light source 22, radiating light of a preset wavelength, an objective lens 27 for condensing the outgoing light from the light source 22 on an optical disc 2 and for condensing the return light from the optical disc 2, a beam splitter 25 for branching the optical path of the return light reflected by the optical disc 2, and for collimating the branched return light so as to be parallel to the outgoing light from the light source 22, a composite optical component including a splitting prism 30 arranged on a site of incidence of the branched return light for spatially splitting the return light, and a light receiving unit for receiving plural return light beams spatially split by the splitting prism 30 for producing focusing error signals.

    摘要翻译： 公开了一种可以简化光电检测器光接收表面或部件的位置调整的光学头，可以降低生产成本并且可以提高操作可靠性。 光头包括一个照射预定波长的光源22，用于将来自光源22的输出光聚焦在光盘2上并用于聚光来自光盘2的返回光的物镜27，一个分束器 25，用于分支由光盘2反射的返回光的光路，并且用于使分支的返回光准直以与来自光源22的出射光平行;复合光学部件，包括分离棱镜30，其布置在 用于空间分离返回光的分支返回光的入射部位，以及用于接收由分割棱镜30空间分裂的多个返回光束的光接收单元，用于产生聚焦误差信号。

    Heterojunction bipolar transistor having reduced driving voltage requirements
    25.
    发明授权
    Heterojunction bipolar transistor having reduced driving voltage requirements 有权
    具有降低的驱动电压要求的异质结双极晶体管

    公开(公告)号：US07135721B2

    公开(公告)日：2006-11-14

    申请号：US10872477

    申请日：2004-06-22

    申请人： Kenji Toyoda ,  Koichiro Yuki ,  Takeshi Takagi ,  Teruhito Ohnishi ,  Minoru Kubo

    发明人： Kenji Toyoda ,  Koichiro Yuki ,  Takeshi Takagi ,  Teruhito Ohnishi ,  Minoru Kubo

    IPC分类号： H01L29/739 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

    CPC分类号： H01L29/7378

    摘要： The bipolar transistor of the present invention includes a Si collector buried layer, a first base region made of a SiGeC layer having a high C content, a second base region made of a SiGeC layer having a low C content or a SiGe layer, and a Si cap layer 14 including an emitter region. The C content is less than 0.8% in at least the emitter-side boundary portion of the second base region. This suppresses formation of recombination centers due to a high C content in a depletion layer at the emitter-base junction, and improves electric characteristics such as the gain thanks to reduction in recombination current, while low-voltage driving is maintained.

    摘要翻译： 本发明的双极晶体管包括Si集电极掩埋层，由具有高C含量的SiGeC层制成的第一基极区域，具有低C含量的SiGeC层或SiGe层制成的第二基极区域，以及 Si覆盖层14包括发射极区域。 至少在第二基极区域的发射极边界部分中，C含量小于0.8％。 这抑制了由于在发射极 - 基极结处的耗尽层中的高C含量而导致的复合中心的形成，并且由于复合电流的降低而改善了诸如增益的电特性，同时维持了低电压驱动。

    Method of forming a semiconductor device including simultaneously forming a single crystalline epitaxial layer and a polycrystalline or amorphous layer
    27.
    发明授权
    Method of forming a semiconductor device including simultaneously forming a single crystalline epitaxial layer and a polycrystalline or amorphous layer 失效
    形成包括同时形成单晶外延层和多晶或非晶层的半导体器件的方法

    公开(公告)号：US06919253B2

    公开(公告)日：2005-07-19

    申请号：US10359553

    申请日：2003-02-07

    申请人： Tohru Saitoh ,  Katsuya Nozawa ,  Minoru Kubo ,  Shigetaka Aoki

    发明人： Tohru Saitoh ,  Katsuya Nozawa ,  Minoru Kubo ,  Shigetaka Aoki

    IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/331

    CPC分类号： H01L29/66242 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639

    摘要： A method of fabricating a semiconductor device according to the present invention includes a step A of forming a polycrystalline or amorphous preliminary semiconductor layer on a surface of a substrate so as to have an opening portion and a step B of simultaneously forming an epitaxial growth layer on an exposed portion of a surface of the substrate through the opening portion and a non-epitaxial growth layer on the preliminary semiconductor layer using a CVD method while heating the substrate inside a reaction chamber by means of a heat source inside the reaction chamber, the epitaxial growth layer being made of single crystalline semiconductor, and the non-epitaxial growth layer being comprised of a polycrystalline or amorphous semiconductor layer.

    摘要翻译： 根据本发明的制造半导体器件的方法包括步骤A，其在衬底的表面上形成多晶或无定形初级半导体层以具有开口部分和在同时形成外延生长层的步骤B上 通过开口部分的衬底的暴露部分和初步半导体层上的非外延生长层，使用CVD方法，同时通过反应室内的热源在反应室内加热衬底，外延 生长层由单晶半导体制成，非外延生长层由多晶或非晶半导体层组成。

    Semiconductor device and method of fabricating semiconductor device
    28.
    发明申请
    Semiconductor device and method of fabricating semiconductor device 失效
    半导体器件及半导体器件的制造方法

    公开(公告)号：US20050066887A1

    公开(公告)日：2005-03-31

    申请号：US10359553

    申请日：2003-02-07

    申请人： Tohru Saitoh ,  Katsuya Nozawa ,  Minoru Kubo ,  Shigetaka Aoki

    发明人： Tohru Saitoh ,  Katsuya Nozawa ,  Minoru Kubo ,  Shigetaka Aoki

    IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/331 ,  H01L29/739 ,  H01L31/0336

    CPC分类号： H01L29/66242 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639

    摘要： A method of fabricating a semiconductor device according to the present invention includes a step A of forming a polycrystalline or amorphous preliminary semiconductor layer on a surface of a substrate so as to have an opening portion and a step B of simultaneously forming an epitaxial growth layer on an exposed portion of a surface of the substrate through the opening portion and a non-epitaxial growth layer on the preliminary semiconductor layer using a CVD method while heating the substrate inside a reaction chamber by means of a heat source inside the reaction chamber, the epitaxial growth layer being made of single crystalline semiconductor, and the non-epitaxial growth layer being comprised of a polycrystalline or amorphous semiconductor layer.

    摘要翻译： 根据本发明的制造半导体器件的方法包括步骤A，其在衬底的表面上形成多晶或无定形初级半导体层以具有开口部分和在同时形成外延生长层的步骤B上 通过开口部分的衬底的暴露部分和初步半导体层上的非外延生长层，使用CVD方法，同时通过反应室内的热源在反应室内加热衬底，外延 生长层由单晶半导体制成，非外延生长层由多晶或非晶半导体层组成。