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公开(公告)号：US07375380B2
公开(公告)日：2008-05-20
申请号：US10551922
申请日：2005-07-11
CPC分类号： H01L33/42 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an active layer sandwiched between the first and second contact layers. The device further includes a transparent electrode which substantially entirely covers a surface of the second contact layer in ohmic contact with the surface of the second contact layer and is transparent to a wavelength of light emitted from the semiconductor light emitting portion, and a metal reflection film which is opposed to substantially the entire surface of the transparent electrode and electrically connected to the transparent electrode, and reflects the light emitted from the semiconductor light emitting portion and passing through the transparent electrode toward the semiconductor light emitting portion.
摘要翻译： 半导体发光器件包括具有第一导电性的第一接触层，第二导电性的第二接触层和夹在第一和第二接触层之间的有源层的半导体发光部。 该装置还包括透明电极，其基本上完全覆盖第二接触层的与第二接触层的表面欧姆接触的表面，并且对于从半导体发光部分发射的光的波长是透明的，并且金属反射膜 其与透明电极的大致整个表面相对并且电连接到透明电极，并且反射从半导体发光部分发射的光并且透过透明电极朝向半导体发光部分。
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公开(公告)号：US20070278502A1
公开(公告)日：2007-12-06
申请号：US11662542
申请日：2005-09-12
申请人： Yukio Shakuda , Toshio Nishida , Masayuki Sonobe
发明人： Yukio Shakuda , Toshio Nishida , Masayuki Sonobe
IPC分类号： H01L33/00
CPC分类号： C09K11/584 , C09K11/642 , C09K11/7701 , H01L27/156 , H01L33/50 , H01L33/54 , H01L33/62 , H01L2224/24 , H01L2924/12044 , H01L2924/00
摘要： There is provided a semiconductor light emitting device which can prevent flickering in illumination due to an alternative current drive, and sensing incongruity at a time of turning off a switch, by providing anti-flickering means in itself, when it is assembled in an illumination device without any extra parts therein. A plurality of light emitting units (1) are formed, by forming a semiconductor lamination portion (17) by laminating semiconductor layers on a substrate (11) so as to form a light emitting layer, by electrically separating the semiconductor lamination portion (17) into a plurality of units, and by providing a pair of electrodes (19) and (20). The light emitting units (1) are respectively connected in series and/or parallel with a wiring film (3). A fluorescent layer (6) containing a fluorescent material having an afterglow time of 10 msec or more and 1 sec or less and/or a layer containing a phosphorescent glass material are formed at a light emitting surface side of the plurality of light emitting units (1).
摘要翻译： 提供了一种半导体发光装置，其可以防止由于替代电流驱动而在照明中闪烁，并且在关闭开关时感测到不协调，通过在其组装在照明装置中时提供防闪烁装置 没有任何额外的零件。 通过在基板（11）上层叠半导体层以形成发光层，通过将半导体层叠部（17）电分离而形成半导体层叠部（17），形成多个发光单元（1） 并且通过提供一对电极（19）和（20）来形成多个单元。 发光单元（1）分别与布线膜（3）串联和/或并联连接。 在多个发光单元的发光面侧形成含有余辉时间为10msec以上1sec以下的荧光体和/或含有磷光玻璃材料的层的荧光体层（6） 1）。
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公开(公告)号：US6107644A
公开(公告)日：2000-08-22
申请号：US12209
申请日：1998-01-23
摘要： A semiconductor light emitting device has semiconductor layers including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer formed on a substrate. A first electrode is formed in electrical connection with the first conductivity type semiconductor layer on a surface side of the semiconductor layers. The second conductivity type semiconductor layer is exposed by partly etch-removing an end portion of the semiconductor layers. A second electrode is provided in electrical connection with the exposed second conductivity type layer. The first and second electrodes are formed such that the electrodes are in parallel, in plan form, with each other at opposite portions thereof. As a result, the current path is constant in electric resistance, providing a semiconductor light emitting device that is constant in brightness, long in service life and high in brightness.
摘要翻译： 半导体发光器件具有包括形成在衬底上的第一导电类型半导体层和第二导电类型半导体层的半导体层。 第一电极在半导体层的表面侧与第一导电类型半导体层电连接形成。 通过部分蚀刻除去半导体层的端部来暴露第二导电类型半导体层。 提供与暴露的第二导电类型电连接的第二电极。 第一和第二电极被形成为使得电极在平面形式上彼此平行，彼此相对。 结果，电流路径恒定，提供亮度恒定，使用寿命长，亮度高的半导体发光元件。
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24.发明授权Light emitting semiconductor device having an improved outward luminosity efficiency and fabrication method for the light emitting semiconductor device 有权具有改善的向外发光效率的发光半导体器件和用于发光半导体器件的制造方法公开(公告)号：US08415682B2
公开(公告)日：2013-04-09
申请号：US12318118
申请日：2008-12-22
IPC分类号： H01L27/00
CPC分类号： H01L33/12 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02642 , H01L21/02647 , H01L33/22 , H01L33/32
摘要： A semiconductor light emitting device and a fabrication method for the semiconductor light emitting device whose outward luminous efficiency improved are provided and the semiconductor light emitting device includes a substrate; a protective film placed on the substrate; an n-type semiconductor layer which is placed on the substrate pinched by a protective film and on the protective film, and is doped with an n-type impurity; an active layer placed on the n-type semiconductor layer, and a p-type semiconductor layer placed on the active layer and is doped with a p-type impurity.
摘要翻译： 提供一种半导体发光器件及其外部发光效率提高的半导体发光器件的制造方法，并且半导体发光器件包括衬底; 保护膜放置在基板上; n型半导体层，其被放置在由保护膜夹持的基板上并在保护膜上，并掺杂有n型杂质; 放置在n型半导体层上的有源层以及置于有源层上并掺杂有p型杂质的p型半导体层。
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公开(公告)号：US20090127572A1
公开(公告)日：2009-05-21
申请号：US11920980
申请日：2006-05-23
申请人： Haruo Tanaka , Masayuki Sonobe
发明人： Haruo Tanaka , Masayuki Sonobe
IPC分类号： H01L33/00
CPC分类号： H01S5/32341 , H01L33/10 , H01L33/32 , H01S5/187
摘要： There is provided a nitride semiconductor light emitting device capable of inhibiting output deterioration of light emission caused by quality deterioration of a nitride semiconductor layer due to lattice-mismatching between a substrate and the nitride semiconductor layer, and utilizing light traveling to the substrate efficiently, while forming a light emitting device of a vertical type which has one electrode on a back surface of the substrate by using the substrate made of SiC. A light reflecting layer (2) which is formed by laminating low refractive index layers (21) and high refractive index layers (22) having different refractive indices alternately is directly provided on the SiC substrate (1), and a semiconductor lamination portion (5) which is formed by laminating nitride semiconductor layers so as to form at least a light emitting layer forming portion (3) is provided on the light reflecting layer (2). An upper electrode (7) is provided on an upper surface side of the semiconductor lamination portion (5), and a lower electrode (8) is provided on a back surface of the SiC substrate (1).
摘要翻译： 提供一种氮化物半导体发光器件，其能够抑制由于衬底和氮化物半导体层之间的晶格失配而导致的氮化物半导体层的质量恶化引起的发光的劣化，并且利用有效地传播到衬底的光，同时 通过使用由SiC制成的基板，在基板的背面形成具有一个电极的垂直型发光元件。 在SiC基板（1）上直接设置由层叠低折射率层（21）和折射率不同的高折射率层（22）形成的光反射层（2），半导体层叠部 ），其通过层叠氮化物半导体层以形成至少一个发光层形成部分（3）形成，设置在光反射层（2）上。 在半导体层叠部（5）的上表面侧设置上电极（7），在SiC基板（1）的背面设有下电极（8）。
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公开(公告)号：US06194241B1
公开(公告)日：2001-02-27
申请号：US09059388
申请日：1998-04-14
IPC分类号： H01L2100
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/0262
摘要： A semiconductor layered portion is formed of a gallium-nitride semiconductor overlying a substrate and having an n-type layer and a p-type layer to form a light emitting layer having a pn junction or a doublehetero junction. A gradient layer is provided at an interfacial portion between an lower layer and an upper layer of the semiconductor layered portion, wherein the gradient layer has a composition varied from a composition from said lower layer to a composition of the upper layer. With this structure, a semiconductor light emitting device which is excellent in light emitting efficiency is provided by reducing crystal lattice mismatch between semiconductor layers formed different in lattice constant on a substrate.
摘要翻译： 半导体层叠部分由覆盖在衬底上并具有n型层和p型层的氮化镓半导体形成，以形成具有pn结或双重结的发光层。 梯度层设置在半导体层叠部分的下层和上层之间的界面部分处，其中梯度层具有从所述下层的组成和上层的组成不同的组成。 利用这种结构，通过减少在衬底上形成的晶格常数不同的半导体层之间的晶格失配，提供了发光效率优异的半导体发光器件。
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公开(公告)号：US06191437B1
公开(公告)日：2001-02-20
申请号：US09381285
申请日：1999-09-21
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/007
摘要： An n-type layer (3) and a p-type layer (5) which are made of a gallium nitride based compound semiconductor are provided on a substrate (1) so that a light emitting layer forming portion (10) for forming a light emitting layer is provided. A gallium nitride based compound semiconductor layer containing oxygen is used for at least one layer of the light emitting layer forming portion (10). In the case where a buffer layer (2) made of the gallium nitride based compound semiconductor or aluminum nitride is provided between the substrate (1) and the light emitting layer forming portion (10), the buffer layer (2) and/or at least one layer of the light emitting layer forming portion (10) may contain oxygen. By such a structure, crystal defects of the semiconductor layer of the light emitting layer forming portion (10) can be decreased and a luminance can highly be enhanced. Thus, it is possible to obtain a blue color type semiconductor light emitting device having a high luminance.
摘要翻译： 在基板（1）上设置由氮化镓类化合物半导体构成的n型层（3）和p型层（5），使得形成光的发光层形成部（10） 提供发光层。 含有氧的氮化镓系化合物半导体层用于至少一层发光层形成部（10）。 在基板（1）和发光层形成部分（10）之间设置由氮化镓基化合物半导体或氮化铝制成的缓冲层（2）的情况下，缓冲层（2）和/或在 发光层形成部（10）的至少一层可以含有氧。 通过这样的结构，可以减少发光层形成部分（10）的半导体层的晶体缺陷，并且可以高度提高亮度。 因此，可以获得具有高亮度的蓝色型半导体发光器件。
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28.发明授权Secret information protection system erasing secret information upon detection of authorized user-initiated event 失效秘密信息保护系统在检测到授权用户发起的事件后，擦除秘密信息
公开(公告)号：US5572696A
公开(公告)日：1996-11-05
申请号：US980706
申请日：1992-11-24
申请人： Masayuki Sonobe
发明人： Masayuki Sonobe
CPC分类号： G06F21/86 , G06F2221/2143
摘要： A secret information protection system for protecting secret information stored in an information processing system from access by an unauthorized user after an authorized user terminates the authorized user's use of the information processing system. The secret information protection system includes a storage device for storing the secret information and an erasure instructing device for generating an erasing instruction to erase the secret information from the storage device. The erasure instructing device has a switch, operated by the authorized person when the authorized person terminates the authorized person's use of the information processing system, for generating the erasing instruction when the authorized person terminates the authorized person's use of the information processing system. An erasure device erases the secret information in accordance with the erasing instruction from the erasure instructing device.
摘要翻译： 一种秘密信息保护系统，用于在授权用户终止授权用户对信息处理系统的使用之后，保护存储在信息处理系统中的秘密信息免于未授权用户的访问。 秘密信息保护系统包括用于存储秘密信息的存储装置和用于生成从存储装置擦除秘密信息的擦除指令的擦除指示装置。 当授权人终止授权人使用信息处理系统时，擦除指示装置具有由授权人操作的切换，用于当授权人终止授权人使用信息处理系统时生成擦除指令。 擦除装置根据来自擦除指示装置的擦除指令擦除秘密信息。
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29.发明授权Photoresist pattern formation through etching where the imaging exposure changes in a given direction in the desired pattern and inclined vapor deposition is utilized to deposit a film 失效通过蚀刻的光刻胶图案形成，其中成像曝光在所需图案中的给定方向上变化并且倾斜气相沉积用于沉积膜
公开(公告)号：US5366849A
公开(公告)日：1994-11-22
申请号：US978263
申请日：1992-11-18
IPC分类号： H01L21/28 , G03F7/20 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/338 , H01L29/812 , G03C5/58
CPC分类号： G03F7/201 , Y10S438/947
摘要： The fine pattern processing method comprises an exposure step for forming a resist pattern having a predetermined opening on a substrate, a vapor deposition step for forming a vapor deposited film on a portion of the substrate which is exposed at the opening by performing an inclined vapor deposition over the resist pattern, and an etching step for performing the etching treatment with use of the vapor deposited film as a mask. In the exposure step, the exposure time of the photoresist is continuously varied within the wafer plane in relation to the continuous changes in the vapor deposition angles within the wafer plane during the inclined vapor deposition, so that the taper angle of the resist pattern is changed. In other words, the exposure time is shortened at the region where the vapor deposition angle is small so as to increase the taper angle of the resist pattern, whereas the exposure time is prolonged at the region where the vapor deposition angle is large in order that the taper angle is decreased.
摘要翻译： 精细图案处理方法包括：在基板上形成具有预定开口的抗蚀剂图案的曝光步骤，在基板的一部分上形成气相沉积膜的气相沉积步骤，其通过进行倾斜气相沉积 以及利用蒸镀膜作为掩模进行蚀刻处理的蚀刻工序。 在曝光步骤中，相对于在倾斜气相沉积期间晶片平面内的气相沉积角度的连续变化，光致抗蚀剂的曝光时间在晶片平面内连续变化，使得抗蚀剂图案的锥角变化 。 换句话说，在气相沉积角度较小的区域，曝光时间缩短，从而增加抗蚀剂图案的锥角，而曝光时间在蒸镀角度大的区域延长，以便于 锥角减小。
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30.发明申请公开(公告)号：US20080258166A1
公开(公告)日：2008-10-23
申请号：US11596124
申请日：2005-05-10
申请人： Mitsuhiko Sakai , Shinichi Kohda , Masayuki Sonobe , Ken Nakahara
发明人： Mitsuhiko Sakai , Shinichi Kohda , Masayuki Sonobe , Ken Nakahara
IPC分类号： H01L33/00
摘要： There is provided a semiconductor light emitting semiconductor device including an n-side electrode which has a structure capable of stably suppressing the contact resistance between the n-side electrode and a nitride semiconductor layer. Further, there is provided a light emitting device and a manufacturing method wherein an ohmic contact between the n-side electrode and the nitride semiconductor layer can be obtained by a simple manufacturing process, and the n-side electrode has an Au layer on a top surface to facilitate wire bonding. Semiconductor layers (2-8) to form a light emitting layer are laminated on a surface of a substrate (1) made of, for example, a sapphire (Al2O3 single crystal) or the like and a p-side electrode (10) is formed on the surface thereof thorough a light transmitting conductive layer (9). An n-side electrode (11) is formed on an exposed surface of an n-type layer (4), exposed by removing a part of the semiconductor layers (4-8) by etching. The n-side electrode includes actually an Al layer (11a) in contact with the n-type layer, a barrier metal layer (11b) and an Au layer (11c).
摘要翻译： 提供一种包括具有能够稳定地抑制n侧电极和氮化物半导体层之间的接触电阻的结构的n侧电极的半导体发光半导体器件。 此外，提供了一种发光器件及其制造方法，其中通过简单的制造工艺可以获得n侧电极和氮化物半导体层之间的欧姆接触，并且n侧电极在顶部具有Au层 表面方便引线接合。 形成发光层的半导体层（2〜8）层压在由例如蓝宝石（Al 2 O 3·N 3）构成的基板（1）的表面上 >单晶）等，并且通过透光导电层（9）在其表面上形成p侧电极（10）。 在n型层（4）的暴露表面上形成n侧电极（11），通过蚀刻去除一部分半导体层（4-8）而露出。 n侧电极实际上包括与n型层接触的Al层（11a），阻挡金属层（11b）和Au层（11c）。
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