公开(公告)号：US07585730B1

公开(公告)日：2009-09-08

申请号：US12164721

申请日：2008-06-30

申请人： Seok Pyo Song ,  Dong Sun Sheen ,  Young Jin Lee ,  Mi Ri Lee ,  Chi Ho Kim ,  Gil Jae Park ,  Bo Min Seo

发明人： Seok Pyo Song ,  Dong Sun Sheen ,  Young Jin Lee ,  Mi Ri Lee ,  Chi Ho Kim ,  Gil Jae Park ,  Bo Min Seo

IPC分类号： H01L21/8247

CPC分类号： H01L29/7881 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324

摘要： A method of fabricating a non-volatile memory device includes forming a tunneling layer and a conductive layer on a semiconductor substrate, and patterning the conductive layer, the tunneling layer, and the semiconductor substrate to form a conductive pattern, a tunneling pattern, and a trench in the semiconductor substrate. The method also includes filling the trench with a insulating material, and exposing a partial sidewall of the conductive pattern. The method further includes recessing the exposed partial sidewall of the conductive pattern in an inward direction to form a floating gate. The floating gate includes a base portion and a protruding portion having a width smaller than that of the base portion. The method also includes etching the insulating layer to form an isolation layer that exposes the base portion of the floating gate. Still further, the method includes forming a dielectric layer, that extends along the base and protruding portions of the floating gate, and a control gate that covers the base and protruding portions of the floating gate.

摘要翻译： 一种制造非易失性存储器件的方法包括在半导体衬底上形成隧道层和导电层，并且对导电层，隧道层和半导体衬底进行构图以形成导电图案，隧道图案和 沟槽在半导体衬底中。 该方法还包括用绝缘材料填充沟槽，以及暴露导电图案的部分侧壁。 该方法还包括将导电图案的暴露部分侧壁向内凹入以形成浮动栅极。 浮动门包括基部和具有小于基部的宽度的突出部分。 该方法还包括蚀刻绝缘层以形成暴露浮动栅极的基部的隔离层。 此外，该方法包括形成沿着基极延伸的电介质层和浮动栅极的突出部分，以及覆盖浮动栅极的基部和突出部分的控制栅极。

公开(公告)号：US20080160110A1

公开(公告)日：2008-07-03

申请号：US11795875

申请日：2005-11-08

申请人： Chan Koo Kang ,  Young Jin Lee ,  Sang Hoon Han ,  Seung Hun Kim

发明人： Chan Koo Kang ,  Young Jin Lee ,  Sang Hoon Han ,  Seung Hun Kim

IPC分类号： A61K36/18 ,  A61K31/07 ,  A61K31/192 ,  A61K31/195 ,  A61P21/02 ,  A61Q19/08

CPC分类号： A61Q19/08 ,  A61K8/63 ,  A61K8/671 ,  A61K8/97

摘要： The present invention relates to an anti-aging cosmetic composition, and more particularly, the present invention relates to an anti-aging cosmetic composition containing Hibiscus esculentus extracts and at least one selected from the group consisting of oleanolic acid, ursolic acid, glycyrhetinic acid and retinol, showing high safety to skin and wrinkle-improvement effect.

摘要翻译： 本发明涉及一种抗衰老化妆品组合物，更具体地说，本发明涉及一种含有芙蓉提取物和至少一种选自齐墩果酸，熊果酸，甘草次酸和 视黄醇，对皮肤表现出高安全性和皱纹改善作用。

公开(公告)号：US07336017B2

公开(公告)日：2008-02-26

申请号：US11217465

申请日：2005-09-02

申请人： Seung Hee Lee ,  Doo Cheol Park ,  Joo Hun Park ,  Young Jin Lee ,  Sang Wook Park ,  Nam Hyeong Kim

发明人： Seung Hee Lee ,  Doo Cheol Park ,  Joo Hun Park ,  Young Jin Lee ,  Sang Wook Park ,  Nam Hyeong Kim

IPC分类号： H03H9/25

CPC分类号： H03H9/1085 ,  H01L24/97 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/3025 ,  H03H3/08 ,  H03H9/059 ,  H03H9/1078 ,  H01L2224/81 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A surface acoustic wave package comprises a first bare chip having a plurality of electrodes formed thereon, a second bare chip having a plurality of electrodes and via-holes formed thereon, a connecting portion electrically connecting the first bare chip to an upper surface of the second bare chip such that the electrodes of the first bare chip face the electrodes of the second bare chip, and a sealing member provided on the first and second bare chips to form an air-tight space on an operating surface between the first and second bare chips.

摘要翻译： 表面声波封装包括其上形成有多个电极的第一裸芯片，形成有多个电极和通孔的第二裸芯片，将第一裸芯片电连接到第二裸芯片的上表面的连接部分 裸芯片，使得第一裸芯片的电极面对第二裸芯片的电极;以及密封构件，设置在第一裸芯片和第二裸芯片上，以在第一和第二裸芯片之间的操作表面上形成气密空间 。

公开(公告)号：US20050048936A1

公开(公告)日：2005-03-03

申请号：US10695758

申请日：2003-10-30

申请人： Young Jin Lee ,  Hyo Seok Kwon ,  Won Jin Baek ,  Jin Taek Lee ,  Hyun Hwan Yoo ,  Jeong Ki Choi

发明人： Young Jin Lee ,  Hyo Seok Kwon ,  Won Jin Baek ,  Jin Taek Lee ,  Hyun Hwan Yoo ,  Jeong Ki Choi

IPC分类号： H04N5/50 ,  H03J1/00 ,  H01Q11/12

CPC分类号： H03J1/0041 ,  H03J2200/02

摘要： Disclosed herein is a digital automatic fine tuning method and apparatus, which is capable of detecting a difference between a nominal frequency and an intermediate frequency generated in a tuner using a counter, and applying the counted data of the counter as a fine tuning value for the intermediate frequency without using a decoder by controlling the reset and preset operations of the counter that counts the frequency of the intermediate frequency.

摘要翻译： 这里公开了一种数字自动微调方法和装置，其能够使用计数器检测在调谐器中产生的标称频率和中频之间的差异，并将计数器的计数数据应用于微调值 通过控制对中频的频率进行计数的计数器的复位和预置操作而不使用解码器的中频。

公开(公告)号：US11871864B2

公开(公告)日：2024-01-16

申请号：US17927207

申请日：2020-09-04

申请人： Seung Hun Shin ,  Se Yeol Choi ,  Young Jin Lee

发明人： Seung Hun Shin ,  Se Yeol Choi ,  Young Jin Lee

IPC分类号： A47J27/086 ,  A47J27/08 ,  A47J27/10 ,  H05B6/12

CPC分类号： A47J27/086 ,  A47J27/0802 ,  A47J27/10 ,  H05B6/12

摘要： A compression type ramen cooker according to an embodiment includes a main frame including side plates formed on both sides thereof, an upper main bar connecting the upper portions of the side plates, and a lower main bar connecting the lower portions of the side plates, a cooking vessel part rotatably mounted on the inner sides of the side plates, a compression chamber mounted above the upper main bar to seal or open the cooking vessel part by moving up and down, an induction heater rotatably mounted on the rear side of the cooking vessel part to heat the cooking vessel part, a ramen discharging part for discharging cooked ramen from the cooking vessel part, and a drain mounted in the lower end of the side plates on both sides to discard the water used for cleaning the cooking vessel part after cooking.

公开(公告)号：US09241556B2

公开(公告)日：2016-01-26

申请号：US14403429

申请日：2013-05-24

申请人： Young Jin Lee

发明人： Young Jin Lee

IPC分类号： A45D20/12 ,  A45D20/08 ,  A45D20/10 ,  A45D20/26

CPC分类号： A45D20/08 ,  A45D20/10 ,  A45D20/12 ,  A45D20/26

摘要： According to the hair dryer of the present invention, which is capable of adjusting the volume of unheated air discharged at the same time as hot air; the hot air is discharged through a first discharge outlet and, simultaneously, the unheated air is discharged through a second discharge outlet, and damage to hair caused by hot drying can be prevented by alternately using the hot air and the unheated air while the hair dryer is in use.

摘要翻译： 根据本发明的吹风机，其能够调节与热空气同时排出的未加热空气的体积; 热空气通过第一排出口排出，同时，未加热空气通过第二排出口排出，并且可以通过交替使用热空气和未加热空气来防止热干燥引起的毛发损伤，同时吹风机 正在使用

公开(公告)号：US08803324B2

公开(公告)日：2014-08-12

申请号：US13602101

申请日：2012-09-01

申请人： Young Jin Lee

发明人： Young Jin Lee

IPC分类号： H01L21/48

CPC分类号： H01L21/76883 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76843 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and methods directed toward preventing a leakage current between a contact plug and a line adjacent to the contact plug, and minimizing capacitance between adjacent lines.

摘要翻译： 一种半导体器件和方法，旨在防止接触插塞和与接触插塞相邻的线路之间的漏电流，并使相邻线路之间的电容最小化。

公开(公告)号：US20130099304A1

公开(公告)日：2013-04-25

申请号：US13603049

申请日：2012-09-04

申请人： Min Soo KIM ,  Dong Sun Sheen ,  Young Jin Lee ,  Jin Hae Choi ,  Joo Hee Han ,  Sung Jin Whang

发明人： Min Soo KIM ,  Dong Sun Sheen ,  Young Jin Lee ,  Jin Hae Choi ,  Joo Hee Han ,  Sung Jin Whang

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L27/11582 ,  H01L21/283 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/32135 ,  H01L27/11556 ,  H01L29/40117 ,  H01L29/42344 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

摘要： The device includes plural control gates stacked on a substrate, plural first channels, configured to penetrate the control gates, and plural memory layer patterns, each located between the control gate and the first channel, configured to respectively surround the first channel, wherein the memory layer patterns are isolated from one another.

公开(公告)号：US20120235584A1

公开(公告)日：2012-09-20

申请号：US13482781

申请日：2012-05-29

申请人： Grigory ONUSHKIN ,  Gil Han Park ,  Jung Ja Yang ,  Young Jin Lee

发明人： Grigory ONUSHKIN ,  Gil Han Park ,  Jung Ja Yang ,  Young Jin Lee

IPC分类号： H05B37/00

CPC分类号： H01L27/156 ,  F21K9/00 ,  H01L33/62 ,  H01L2224/49107 ,  H05B33/0821 ,  H01L2224/48091 ,  H01L2924/00014

摘要： An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K≧3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K−1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC.

公开(公告)号：US08043962B2

公开(公告)日：2011-10-25

申请号：US11756005

申请日：2007-05-31

申请人： Dong Ha Jung ,  Baek Mann Kim ,  Soo Hyun Kim ,  Young Jin Lee ,  Sun Woo Hwang ,  Jeong Tae Kim

发明人： Dong Ha Jung ,  Baek Mann Kim ,  Soo Hyun Kim ,  Young Jin Lee ,  Sun Woo Hwang ,  Jeong Tae Kim

IPC分类号： H01L21/4763

CPC分类号： H01L21/76879 ,  H01L21/76831 ,  H01L21/76856 ,  H01L21/76886 ,  H01L21/76888 ,  H01L23/53223 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal wiring of a semiconductor device includes a semiconductor substrate; an insulating layer provided with a damascene pattern formed over the semiconductor substrate; a diffusion barrier layer which contains a RuO2 layer formed on a surface of the damascene pattern and an Al deposit-inhibiting layer formed on a portion of the RuO2 layer in both-side upper portion of the damascene pattern; and a wiring metal layer including Al formed on the diffusion barrier layer by MOCVD method in order to fill the damascene pattern.

摘要翻译： 半导体器件的金属布线包括半导体衬底; 绝缘层，设置有形成在所述半导体衬底上的镶嵌图案; 包含在镶嵌图案的表面上形成的RuO 2层的扩散阻挡层和形成在该镶嵌图案的两侧上部的RuO 2层的一部分上的Al沉积抑制层; 以及通过MOCVD法在扩散阻挡层上形成的包括Al的布线金属层，以填充镶嵌图案。