摘要:
The device includes plural control gates stacked on a substrate, plural first channels, configured to penetrate the control gates, and plural memory layer patterns, each located between the control gate and the first channel, configured to respectively surround the first channel, wherein the memory layer patterns are isolated from one another.
摘要:
A method of fabricating a non-volatile memory device includes forming a tunneling layer and a conductive layer on a semiconductor substrate, and patterning the conductive layer, the tunneling layer, and the semiconductor substrate to form a conductive pattern, a tunneling pattern, and a trench in the semiconductor substrate. The method also includes filling the trench with a insulating material, and exposing a partial sidewall of the conductive pattern. The method further includes recessing the exposed partial sidewall of the conductive pattern in an inward direction to form a floating gate. The floating gate includes a base portion and a protruding portion having a width smaller than that of the base portion. The method also includes etching the insulating layer to form an isolation layer that exposes the base portion of the floating gate. Still further, the method includes forming a dielectric layer, that extends along the base and protruding portions of the floating gate, and a control gate that covers the base and protruding portions of the floating gate.
摘要:
A method for manufacturing a semiconductor device using a salicide process, which includes forming a gate dielectric layer over a silicon substrate including a PMOS region and an NMOS region; forming a first silicon pattern in the NMOS region and a second silicon pattern in the PMOS region; forming a first metal layer that is in contact with the first silicon pattern and the exposed first portion of the silicon substrate; and forming a first gate, a first junction, a second gate, and a second junction by performing a heat treatment to silicify the respective first and second silicon patterns and the silicon substrate.
摘要:
A method for manufacturing a semiconductor device using a salicide process, which includes forming a gate dielectric layer over a silicon substrate including a PMOS region and an NMOS region; forming a first silicon pattern in the NMOS region and a second silicon pattern in the PMOS region; forming a first metal layer that is in contact with the first silicon pattern and the exposed first portion of the silicon substrate; and forming a first gate, a first junction, a second gate, and a second junction by performing a heat treatment to silicify the respective first and second silicon patterns and the silicon substrate.
摘要:
The present invention relates to a system and a method for displaying an accumulative fuel economic driving area of a vehicle. A system according to an embodiment includes a vehicle information unit that collects vehicle information and a controller that calculates a fuel economic driving area by using the vehicle information, and calculates an accumulative fuel economic driving area by accumulating respective lighting times of respective zones of the fuel economic driving area and calculating respective accumulation ratios of the respective zones. The system provides the driver with information for fuel economic driving.
摘要:
Provided is a ceramic package for headlamp, and a headlamp module having the same. The ceramic package for headlamp includes a body part, a pair of internal electrodes, and an electrode exposing part. The body part has a cavity formed therein. The cavity is upwardly opened to expose a light emitting diode mounted on a mounting part. The pair of internal electrodes in the body part is electrically connected to the light emitting diode. The electrode exposing part is stepped at either side of the body part to upwardly expose the internal electrode to the outside.
摘要:
An LED package module according to an aspect of the invention may include: a substrate having predetermined electrodes thereon; a plurality of LED chips mounted onto the substrate, separated from each other at predetermined intervals, and electrically connected to the electrodes; a first color resin portion molded around at least one of the plurality of LED chips; a second color resin portion molded around all of the LED chips except for the LED chip around which the first color resin portion is molded, and having a different color from the first color resin portion; and a third color resin portion encompassing both the first color resin portion and the second color resin portion and having a different color from the first color resin portion and the second color resin portion. Accordingly, a reduction in luminous efficiency of an LED caused by yellowing is prevented to thereby increase luminous efficiency and achieve a reduction in size.
摘要:
There is provided an LED driving circuit including: at least one ladder network circuit including: (n+1) number of first branches connected in parallel with one another by n number of first middle junction points between a first junction point and a second junction point, where n denotes an integer satisfying n≧2, (n+1) number of second branches connected in parallel with one another by n number of second middle junction points between the first junction point and the second junction point, the (n+1) number of second branches connected in parallel with the first branches; and n number of middle branches connecting the first and second middle junction points of an identical m sequence to each other, respectively, wherein each of the first and second, and middle branches comprises at least one LED device.
摘要:
The present invention relates to an anti-aging cosmetic composition, and more particularly, the present invention relates to an anti-aging cosmetic composition containing Hibiscus esculentus extracts and at least one selected from the group consisting of oleanolic acid, ursolic acid, glycyrhetinic acid and retinol, showing high safety to skin and wrinkle-improvement effect.