METHOD OF MEASURING CAPACITANCE CHARACTERISTICS OF A GATE OXIDE IN A MOS TRANSISTOR DEVICE
    24.
    发明申请
    METHOD OF MEASURING CAPACITANCE CHARACTERISTICS OF A GATE OXIDE IN A MOS TRANSISTOR DEVICE 审中-公开
    在MOS晶体管器件中测量栅极氧化物的电容特性的方法

    公开(公告)号:US20070159209A1

    公开(公告)日:2007-07-12

    申请号:US11615772

    申请日:2006-12-22

    申请人: Chul Soo Kim

    发明人: Chul Soo Kim

    IPC分类号: G01R31/26

    CPC分类号: G01R31/2621 G01R27/2605

    摘要: A method for measuring capacitance characteristics of a gate oxide in MOS transistor device. Capacitance characteristics of a gate oxide may be accurately, rapidly, and effectively obtain (e.g. in the form of a capacitance characteristics curve). A method may measure capacitance characteristics of a gate oxide using a characteristics measuring system using an impedance Z—phase angle θ method.

    摘要翻译: 一种用于测量MOS晶体管器件中的栅极氧化物的电容特性的方法。 栅极氧化物的电容特性可以精确,快速并且有效地获得(例如以电容特性曲线的形式)。 一种方法可以使用使用阻抗Z相角θ方法的特性测量系统来测量栅极氧化物的电容特性。

    Bulk acoustic wave resonator structure, a manufacturing method thereof, and a duplexer using the same
    29.
    发明授权
    Bulk acoustic wave resonator structure, a manufacturing method thereof, and a duplexer using the same 有权
    体声波谐振器结构,其制造方法以及使用其的双工器

    公开(公告)号:US08648671B2

    公开(公告)日:2014-02-11

    申请号:US13088905

    申请日:2011-04-18

    IPC分类号: H03H9/70 H03H9/13 H03H9/54

    摘要: A Bulk Acoustic Wave Resonator (BAWR), a method of manufacturing of the BAWR, and duplexer including the BAWR are provided. The BAWR may include a first substrate including a via hole formed in a predetermined area of a bottom surface of the first substrate. A first air cavity may be formed above the first substrate, and a first lamination resonating portion may be laminated above the first air cavity in sequence of a lower electrode, a piezoelectric layer, and an upper electrode. A second air cavity may be formed above the first substrate, and a second lamination resonating portion may be laminated above the second air cavity in sequence of the lower electrode, the piezoelectric layer, and the upper electrode. The first lamination resonating portion and the second lamination resonating portion may be connected via either the lower electrode or the upper electrode. A first electrode portion may include a third air cavity formed on a bottom surface of either the lower electrode or the upper electrode connecting between the first lamination resonating portion and the second lamination resonating portion.

    摘要翻译: 提供了一种体声波谐振器(BAWR),一种制造BAWR的方法,以及包括BAWR的双工器。 BAWR可以包括第一基板,其包括形成在第一基板的底表面的预定区域中的通孔。 可以在第一基板上形成第一空气腔,并且第一层叠谐振部分可以按照下电极,压电层和上电极的顺序层叠在第一空气腔的上方。 可以在第一基板的上方形成第二空气腔,并且第二层压谐振部分可以按照下电极,压电层和上电极的顺序层叠在第二空气腔的上方。 第一层叠谐振部分和第二层叠谐振部分可以通过下电极或上电极连接。 第一电极部分可以包括形成在第一层压谐振部分和第二层压谐振部分之间的下电极或上电极的底表面上的第三空腔。