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公开(公告)号:US11728800B1
公开(公告)日:2023-08-15
申请号:US17648849
申请日:2022-01-25
Applicant: Infineon Technologies AG
Inventor: Semen Syroiezhin , Valentyn Solomko , Matthias Voelkel , Aleksey Zolotarevskyi
IPC: H03K17/04 , H03K17/0412 , H03K17/16 , H03K17/693 , H03K17/042 , H03K17/687
CPC classification number: H03K17/04206 , H03K17/04123 , H03K17/687 , H03K2217/0054
Abstract: A radio frequency (RF) switch includes a switchable RF path including a plurality of transistors coupled in series; a gate bias network including a plurality of resistors, wherein the gate bias network is coupled to each of the plurality of transistors in the switchable RF path; and a bypass network including a first plurality of transistors coupled in parallel to each of the plurality of transistors in the switchable RF path and a second plurality of transistors coupled in parallel to each of the plurality of resistors in the gate bias network.
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公开(公告)号:US10778278B2
公开(公告)日:2020-09-15
申请号:US16414459
申请日:2019-05-16
Applicant: Infineon Technologies AG
Inventor: Valentyn Solomko , Hans-Peter Friedrich , Michael Wilhelm
Abstract: A device includes a switching unit including N input ports and M output ports, wherein N≥M≥2. The switching unit is configured to selectively interconnect each of the M output ports with a different one of the N input ports. The device further includes M attenuators, wherein each of the M attenuators is electrically coupled to a different one of the M output ports of the switching unit.
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公开(公告)号:US20190273527A1
公开(公告)日:2019-09-05
申请号:US16414459
申请日:2019-05-16
Applicant: Infineon Technologies AG
Inventor: Valentyn Solomko , Hans-Peter Friedrich , Michael Wilhelm
Abstract: A device includes a switching unit including N input ports and M output ports, wherein N≥M≥2. The switching unit is configured to selectively interconnect each of the M output ports with a different one of the N input ports. The device further includes M attenuators, wherein each of the M attenuators is electrically coupled to a different one of the M output ports of the switching unit.
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公开(公告)号:US20190267990A1
公开(公告)日:2019-08-29
申请号:US15908087
申请日:2018-02-28
Applicant: Infineon Technologies AG
Inventor: Bernd Schleicher , Ruediger Bauder , Daniel Kehrer , Valentyn Solomko
IPC: H03K17/687 , H03K17/10 , H03K17/693 , H01P1/15 , H04B1/40
Abstract: An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, each RF switch cell having an input, and a biasing network having outputs for individually biasing each of the RF switch cell inputs to a distinct bias voltage based upon a rank number of the RF switch cell
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公开(公告)号:US10361696B1
公开(公告)日:2019-07-23
申请号:US16264186
申请日:2019-01-31
Applicant: Infineon Technologies AG
Inventor: Bernd Schleicher , Winfried Bakalski , Ruediger Bauder , Valentyn Solomko
IPC: H03K17/16 , H03K17/687
CPC classification number: H03K17/161 , H03K17/6871 , H03K17/693
Abstract: An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, a transistor including a first current node coupled to a first load resistor, a second current node coupled to ground, and a control node coupled to an internal switch node, and a filter having an input coupled to the first current node of the first transistor and an output for providing a DC voltage corresponding to the RF power present at the internal switch node.
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公开(公告)号:US20180308804A1
公开(公告)日:2018-10-25
申请号:US16025338
申请日:2018-07-02
Applicant: Infineon Technologies AG
Inventor: Chau Fatt Chiang , Kok Yau Chua , Swee Kah Lee , Chee Yang NG , Valentyn Solomko
IPC: H01L23/552 , H01L23/498 , H01L21/48 , H01L21/56 , H01L23/31 , H01L23/367 , H01L23/66 , H01L23/00
CPC classification number: H01L23/552 , H01L21/485 , H01L21/4853 , H01L21/4882 , H01L21/565 , H01L23/3114 , H01L23/367 , H01L23/49838 , H01L23/66 , H01L24/48 , H01L2223/6677 , H01L2224/48227 , H01L2924/3025
Abstract: A device includes a substrate that includes conductive structures and has a first surface that is opposite to a second surface. Conductive pillars are built up over and electrically coupled to at least one of the conductive structures. An integrated circuit is disposed over the first surface and electrically coupled to the conductive structures. A molding compound is formed over the first surface of the substrate.
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公开(公告)号:US20170195146A1
公开(公告)日:2017-07-06
申请号:US14985767
申请日:2015-12-31
Applicant: Infineon Technologies AG
Inventor: Jake Greene , Valentyn Solomko
CPC classification number: H04L25/03878 , H01P5/185 , H04B3/145 , H04L25/0272 , H04L25/03031
Abstract: In accordance with an embodiment, a device includes a directional coupler having an input port, a transmitted port, a coupled port and an isolated port. The device also includes a first passive equalizer having a first terminal coupled to a first one of a coupled port and an isolated port of the directional coupler. The first passive equalizer includes a resonator having a first inductor and a first capacitor, the resonator coupled between the first terminal and a second terminal of the first passive equalizer. The first passive equalizer also includes a first resistor and a second resistor serially connected between the first and the second terminals of the first passive equalizer, the first resistor connected to the second resistor at a first node. The first equalizer further includes a shunt network coupled between a reference terminal and the first node.
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公开(公告)号:US20170187368A1
公开(公告)日:2017-06-29
申请号:US14983228
申请日:2015-12-29
Applicant: Infineon Technologies AG
Inventor: Anthony Thomas , Winfried Bakalski , Valentyn Solomko , Ruediger Bauder
Abstract: In accordance with an embodiment, an adjustable capacitance circuit comprising a first branch comprising plurality of transistors having load paths coupled in series with a first capacitor. A method of operating the adjustable capacitance circuit includes programming a capacitance by selectively turning-on and turning-off ones of the plurality of transistors, wherein the load path of each transistor of the plurality of transistors is resistive when the transistor is on and is capacitive when the transistor is off.
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公开(公告)号:US20170026020A1
公开(公告)日:2017-01-26
申请号:US14804073
申请日:2015-07-20
Applicant: Infineon Technologies AG
Inventor: Valentyn Solomko , Winfried Bakalski , Nikolay Ilkov
Abstract: In accordance with an embodiment, a method of operating a directional coupler includes determining a coupled power variation by applying an input signal at an input port of the directional coupler, applying a first impedance at a transmitted port of the directional coupler, measuring a first coupled power at a coupled port of the directional coupler after applying the first impedance, applying a second impedance at the transmitted port of the directional coupler, measuring a second coupled power after applying the second impedance, and determining a difference between the first coupled power and the second coupled power to form the coupled power variation.
Abstract translation: 根据实施例,一种操作定向耦合器的方法包括通过在定向耦合器的输入端口处施加输入信号来确定耦合的功率变化,在定向耦合器的发射端口处施加第一阻抗,测量第一耦合 在施加第一阻抗之后在定向耦合器的耦合端口处的功率,在定向耦合器的发送端口处施加第二阻抗,在施加第二阻抗之后测量第二耦合功率,以及确定第一耦合功率与 第二耦合功率以形成耦合功率变化。
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公开(公告)号:US09319006B2
公开(公告)日:2016-04-19
申请号:US14043496
申请日:2013-10-01
Applicant: Infineon Technologies AG
Inventor: Valentyn Solomko , Winfried Bakalski , Nikolay Ilkov
IPC: H01P5/18 , H03F1/56 , H03F3/195 , H03F3/68 , H03F3/60 , H03F1/02 , H03H11/36 , H03H11/00 , H03H7/24
CPC classification number: H03F1/56 , H01P5/18 , H03F1/0261 , H03F3/195 , H03F3/602 , H03F3/68 , H03F2200/198 , H03F2200/255 , H03F2200/451 , H03H7/24 , H03H11/36
Abstract: In accordance with an embodiment, a directional coupler includes a coupler circuit and at least one amplifier coupled between a coupler circuit isolated port and a directional coupler isolated port and/or between a coupler circuit coupled port and a directional coupler coupled port. In various embodiments, the directional coupler is disposed over and/or in a substrate.
Abstract translation: 根据实施例,定向耦合器包括耦合器电路和耦合在耦合器电路隔离端口和定向耦合器隔离端口之间和/或耦合器电路耦合端口和定向耦合器耦合端口之间的至少一个放大器。 在各种实施例中,定向耦合器设置在衬底上和/或衬底中。
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