ALUMINUM NITRIDE (AlN) DEVICES WITH INFRARED ABSORPTION STRUCTURAL LAYER
    22.
    发明申请
    ALUMINUM NITRIDE (AlN) DEVICES WITH INFRARED ABSORPTION STRUCTURAL LAYER 审中-公开
    带有红外吸收结构层的氮化铝(AlN)器件

    公开(公告)号:US20170022054A1

    公开(公告)日:2017-01-26

    申请号:US15291599

    申请日:2016-10-12

    Abstract: A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.

    Abstract translation: 公开了一种微机电系统装置。 微机械系统装置包括第一硅衬底,其包括:手柄层,包括第一表面和第二表面,所述第二表面包括空腔; 沉积在手柄层的第二表面上的绝缘层; 具有结合到绝缘层的第三表面和第四表面的器件层; 沉积在器件层的第四表面上的压电层; 设置在所述压电层上的金属导电层; 设置在所述金属导电层的一部分上的接合层; 以及在所述第一硅衬底上形成的间隔件; 其中所述第一硅衬底接合到第二硅衬底,包括:金属电极,被配置为在所述第一硅衬底上形成的所述金属传导层与所述第二硅衬底之间形成电连接。

    PIEZOELECTRIC MICROPHONE WITH INTEGRATED CMOS
    23.
    发明申请
    PIEZOELECTRIC MICROPHONE WITH INTEGRATED CMOS 审中-公开
    具有集成CMOS的压电麦克风

    公开(公告)号:US20160090300A1

    公开(公告)日:2016-03-31

    申请号:US14860139

    申请日:2015-09-21

    Abstract: A piezoelectric microphone and/or a piezoelectric microphone system is presented herein. In an implementation, a piezoelectric microphone includes a microelectromechanical systems (MEMS) layer and a complementary metal-oxide-semiconductor (CMOS) layer. The MEMS layer includes at least one piezoelectric layer and a conductive layer. The conductive layer is deposited on the at least one piezoelectric layer and is associated with at least one sensing electrode. The CMOS layer is deposited on the MEMS layer. Furthermore, a cavity formed in the CMOS layer includes the at least one sensing electrode

    Abstract translation: 此处呈现压电麦克风和/或压电麦克风系统。 在一个实现中,压电麦克风包括微机电系统(MEMS)层和互补金属氧化物半导体(CMOS)层。 MEMS层包括至少一个压电层和导电层。 导电层沉积在至少一个压电层上并且与至少一个感测电极相关联。 CMOS层沉积在MEMS层上。 此外,形成在CMOS层中的空腔包括至少一个感测电极

    Ultrasonic sensing device
    26.
    发明授权

    公开(公告)号:US11107858B2

    公开(公告)日:2021-08-31

    申请号:US16666024

    申请日:2019-10-28

    Abstract: An electronic device comprises a CMOS substrate having a first surface and a second surface opposite the first surface. A plurality of ultrasonic transducers is provided having a transmit/receive surface. A contact surface is piezoelectrically associated with the plurality of ultrasonic transducers and is formed on the first surface of the CMOS substrate. The plurality of ultrasonic transducers is disposed on the second surface of the CMOS substrate, with the transmit/receive side attached to the second surface thereof such that the CMOS substrate is between the plurality of ultrasonic transducers and the platen. An image sensing system is also provided, together with a method for ultrasonic sensing in the electronic device.

    Piezoelectric micromachined ultrasonic transducer (PMUT)

    公开(公告)号:US10656255B2

    公开(公告)日:2020-05-19

    申请号:US15205743

    申请日:2016-07-08

    Abstract: A Piezoelectric Micromachined Ultrasonic Transducer (PMUT) device is provided. The PMUT includes a substrate and an edge support structure connected to the substrate. A membrane is connected to the edge support structure such that a cavity is defined between the membrane and the substrate, where the membrane is configured to allow movement at ultrasonic frequencies. The membrane includes a piezoelectric layer and first and second electrodes coupled to opposing sides of the piezoelectric layer. An interior support structure is disposed within the cavity and connected to the substrate and the membrane.

    Two-dimensional array of CMOS control elements

    公开(公告)号:US10325915B2

    公开(公告)日:2019-06-18

    申请号:US15294186

    申请日:2016-10-14

    Abstract: An electronic device includes a plurality of CMOS control elements arranged in a two-dimensional array, where each CMOS control element of the plurality of CMOS control elements includes semiconductor devices. The plurality of CMOS control elements each including a PMOS semiconductor device portion comprising a high voltage PMOS device and a low voltage PMOS device and an NMOS semiconductor device portion comprising a high voltage NMOS device and a low voltage NMOS device. The plurality of CMOS control elements are arranged in the two-dimensional array such that the PMOS semiconductor device portion of a CMOS control element of the plurality of CMOS control elements is only adjacent to other PMOS semiconductor device portions of adjacent CMOS control elements of the plurality of CMOS control elements, and such that the NMOS semiconductor device portion of a CMOS control element of the plurality of CMOS control elements is only adjacent to other NMOS semiconductor device portions of adjacent CMOS control elements of the plurality of CMOS control elements.

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